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1. 发明申请

US20160155628A1 SUBSTRATE REGENERATION METHOD AND REGENERATED SUBSTRATE 有权
标题翻译：基板再生方法和再生基板
公开(公告)号：US20160155628A1
公开(公告)日：2016-06-02
申请号：US14958793
申请日：2015-12-03
申请人： Seoul Viosys Co., Ltd.
发明人： Chang Suk Han , Hwa Mok Kim , Mi So Ko , A Ram Cha Lee , Daewoong Suh
IPC分类号： H01L21/02 , H01L29/20 , H01L29/34
CPC分类号： H01L21/02032 , H01L21/0265 , H01L29/2003 , H01L29/34 , H01L33/0075 , H01L33/12
摘要： Disclosed are a substrate regeneration method and a regenerated substrate. The substrate regeneration method comprises preparing a substrate having a surface separated from an epitaxial layer. The separated surface includes a convex portion and a concave portion, and the convex portion is comparatively flatter than the concave portion. A crystalline restoration layer is grown on the separated surface. The crystalline restoration layer is grown on the convex portion. Furthermore, a surface roughness improvement layer is grown on the crystalline restoration layer, thereby providing a continuous surface. Accordingly, it is possible to provide a regenerated substrate, which has a flat surface, without using physical polishing or chemical etching technology.
摘要翻译：公开了一种基板再生方法和再生基板。衬底再生方法包括制备具有与外延层分离的表面的衬底。分离面包括凸部和凹部，凸部比凹部比较平坦。在分离的表面上生长晶体恢复层。晶体恢复层在凸部上生长。此外，在结晶恢复层上生长表面粗糙度改善层，从而提供连续的表面。因此，可以提供具有平坦表面的再生基板，而不使用物理抛光或化学蚀刻技术。

2. 发明申请

US20160072015A1 VERTICAL ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：垂直超紫外线发光装置及其制造方法
公开(公告)号：US20160072015A1
公开(公告)日：2016-03-10
申请号：US14846592
申请日：2015-09-04
申请人： Seoul Viosys Co., Ltd.
发明人： Jung Hwan Hwang , Chang Suk Han , Chang Geun Jang , Hwa Mok Kim
IPC分类号： H01L33/30 , H01L33/00 , H01L33/60 , H01L33/58 , H01L33/06 , H01L33/62
CPC分类号： H01L33/06 , H01L25/167 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/486 , H01L2924/0002 , H01L2933/0016 , H01L2933/0033 , H01L2933/0091 , H01L2924/00
摘要： Disclosed herein are a vertical ultraviolet light emitting device including: a p-type semiconductor layer including Al; an active layer positioned on the p-type semiconductor layer and including the Al; an n-type semiconductor layer positioned on the active layer and including the Al; a metal contact layer positioned on the n-type semiconductor layer and doped with an n type; and a pad formed on the metal contact layer, wherein the metal contact layer has an Al content lower than that of the n-type semiconductor layer, and a method for manufacturing the same. According to the exemplary embodiments of the present invention, the metal contact layer is formed on the n-type semiconductor layer to allow the metal contact layer instead of the n-type semiconductor layer including AlGaN to act as the contact layer, thereby effectively improving the n type contact characteristics of the vertical ultraviolet light emitting device.
摘要翻译：本文公开了一种垂直紫外线发射装置，包括：包括Al的p型半导体层; 位于p型半导体层上且包括Al的有源层; 位于有源层上且包括Al的n型半导体层; 位于n型半导体层上并掺杂有n型的金属接触层; 以及形成在所述金属接触层上的焊盘及其制造方法，其中，所述金属接触层的Al含量低于所述n型半导体层的Al含量。根据本发明的示例性实施例，金属接触层形成在n型半导体层上，以允许金属接触层代替包括AlGaN的n型半导体层作为接触层，从而有效地改善了垂直紫外线发射装置的n型接触特性。

3. 发明授权

US09059012B2 Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same 有权
标题翻译：具有用于分离生长衬底的空隙的外延层晶片和使用其形成的半导体器件
公开(公告)号：US09059012B2
公开(公告)日：2015-06-16
申请号：US14105919
申请日：2013-12-13
申请人： SEOUL VIOSYS CO., LTD.
发明人： Jong Min Jang , Kyu Ho Lee , Chang Suk Han , Hwa Mok Kim , Daewoong Suh , Chi Hyun In , Jong Hyeon Chae
IPC分类号： H01L33/22 , H01L21/02 , H01L29/06 , H01L33/20 , H01L33/00
CPC分类号： H01L33/22 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L29/0657 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/24 , H01L33/32
摘要： An epitaxial wafer having a void for separation of a substrate and a semiconductor device fabricated using the same. The epitaxial wafer includes a substrate, a mask pattern disposed on the substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern. The epitaxial layer includes a void disposed on the masking region. The epitaxial layer can be separated from the growth substrate by applying chemical lift-off or stress lift-off, at the void.
摘要翻译：具有用于分离衬底的空隙的外延晶片和使用其制造的半导体器件。外延晶片包括衬底，设置在衬底上并包括掩模区域和开口区域的掩模图案以及覆盖掩模图案的外延层。外延层包括设置在掩蔽区域上的空隙。通过在空隙处施加化学剥离或应力剥离，外延层可以与生长衬底分离。

4. 发明授权

US09716210B2 Light emitting diode and method of fabricating the same 有权
公开(公告)号：US09716210B2
公开(公告)日：2017-07-25
申请号：US14690036
申请日：2015-04-17
申请人： Seoul Viosys Co., Ltd.
发明人： Kwang Joong Kim , Chang Suk Han , Kyung Hee Ye , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
IPC分类号： H01L27/15 , H01L33/00 , H01L33/06 , H01L33/02 , H01L33/04 , H01L33/32 , H01L21/02
CPC分类号： H01L33/06 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/0025 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/32
摘要： Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

5. 发明申请

US20160104816A1 LIGHT EMITTING DEVICE AND METHOD FOR PREPARING THE SAME 审中-公开
标题翻译：发光装置及其制备方法
公开(公告)号：US20160104816A1
公开(公告)日：2016-04-14
申请号：US14893466
申请日：2014-04-08
申请人： SEOUL VIOSYS CO., LTD.
发明人： Sung Ho An , Chang Suk Han , Jun Ho Yun , Chae Hon Kim , Si Hoon Lyu
IPC分类号： H01L33/32 , H01L33/14 , H01L33/00
摘要： Provided are a light-emitting element and a method for preparing same. The method includes a method for growing a p-type semiconductor layer having a low-concentration doping layer, an undoped layer and a high-concentration doping layer. During the growth of the low-concentration doping layer and the high-concentration doping layer, both N2 gas and H2 gas are supplied, whereas, during the growth of the undoped layer, the supply of H2 gas is shut off and N2 gas is supplied. Accordingly, the doping concentration of Mg contained in the undoped layer can be further lowered, and thus, hole mobility within the p-type semiconductor layer can be enhanced.
摘要翻译：提供发光元件及其制备方法。该方法包括用于生长具有低浓度掺杂层，未掺杂层和高浓度掺杂层的p型半导体层的方法。在低浓度掺杂层和高浓度掺杂层的生长期间，供应N 2气体和H 2气体，而在未掺杂层生长期间，关闭H 2气体的供应并提供N 2气体。因此，可以进一步降低包含在未掺杂层中的Mg的掺杂浓度，从而可以提高p型半导体层内的空穴迁移率。

6. 发明申请

US20150295132A1 EPITAXIAL LAYER WAFER HAVING VOID FOR SEPARATING GROWTH SUBSTRATE THEREFROM AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME 审中-公开
标题翻译：具有用于分离其生长基底的异常层的波浪形波片和使用其制造的半导体器件
公开(公告)号：US20150295132A1
公开(公告)日：2015-10-15
申请号：US14726031
申请日：2015-05-29
申请人： SEOUL VIOSYS CO., LTD.
发明人： Jong Min JANG , Kyu Ho Lee , Chang Suk Han , Hwa Mok Kim , Daewoong Suh , Chi Hyun In , Jong Hyeon Chae
IPC分类号： H01L33/22 , H01L33/24 , H01L33/00 , H01L33/32
CPC分类号： H01L33/22 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L29/0657 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/24 , H01L33/32
摘要： An epitaxial wafer includes a growth substrate, a mask pattern disposed on the growth substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern and including a first void disposed on the masking region. The first void includes a lower void disposed between a lower surface of the epitaxial layer and the masking region, and an upper void extending from the lower void into the epitaxial layer, the lower void having a greater width than the upper void.
摘要翻译：外延晶片包括生长衬底，设置在生长衬底上并包括掩模区域和开口区域的掩模图案，以及覆盖掩模图案并且包括设置在掩蔽区域上的第一空隙的外延层。第一空隙包括设置在外延层的下表面和掩蔽区域之间的下部空隙和从下部空隙延伸到外延层中的上部空隙，下部空隙具有比上部空隙更大的宽度。

7. 发明申请

US20170309775A1 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
公开(公告)号：US20170309775A1
公开(公告)日：2017-10-26
申请号：US15643403
申请日：2017-07-06
申请人： SEOUL VIOSYS CO., LTD.
发明人： Kwang Joong Kim , Chang Suk Han , Kyung Hee Ye , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
IPC分类号： H01L33/06 , H01L33/00 , H01L33/02 , H01L33/04 , H01L33/32 , H01L21/02
CPC分类号： H01L33/06 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/0025 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/32
摘要： Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

8. 发明授权

US09577144B2 Ultraviolet light-emitting device 有权
标题翻译：紫外线发光装置
公开(公告)号：US09577144B2
公开(公告)日：2017-02-21
申请号：US14784007
申请日：2014-03-07
申请人： Seoul Viosys Co., Ltd.
发明人： Hyo Shik Choi , Jung Hwan Hwang , Chang Suk Han
IPC分类号： H01L33/06 , H01L33/04 , H01L33/32 , H01L33/00 , H01L33/14
CPC分类号： H01L33/06 , H01L33/0025 , H01L33/04 , H01L33/14 , H01L33/145 , H01L33/32
摘要： Disclosed is an ultraviolet light-emitting device. The light-emitting device includes: an n-type contact layer including a GaN layer; a p-type contact layer including an AlGaN or AlInGaN layer; and an active region of multiple quantum well structure positioned between the n-type contact layer and the p-type contact layer. In addition, the active region of multiple quantum well structure includes a GaN or InGaN layer with a thickness less than 2 nm, radiating an ultraviolet ray with a peak wavelength of 340 nm to 360 nm.
摘要翻译：公开了一种紫外线发光装置。发光装置包括：包括GaN层的n型接触层; 包括AlGaN或AlInGaN层的p型接触层; 以及位于n型接触层和p型接触层之间的多量子阱结构的有源区。此外，多量子阱结构的有源区包括厚度小于2nm的GaN或InGaN层，辐射峰值波长为340nm至360nm的紫外线。

9. 发明授权

US09312447B2 Near UV light emitting device 有权
标题翻译：近UV发光装置
公开(公告)号：US09312447B2
公开(公告)日：2016-04-12
申请号：US14526110
申请日：2014-10-28
申请人： SEOUL VIOSYS CO., LTD.
发明人： Chang Suk Han , Hwa Mok Kim , Hyo Shik Choi , Mi So Ko , A Ram Cha Lee
IPC分类号： H01L33/06 , H01L33/32 , H01L33/04 , H01L33/14
CPC分类号： H01L33/32 , H01L33/04 , H01L33/06 , H01L33/14
摘要： Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.
摘要翻译：公开了一种近紫外发光装置。发光器件包括n型接触层，p型接触层，设置在n型接触层和p型接触层之间的多量子阱结构的有源区，以及至少一个电子控制层设置在n型接触层和有源区之间。 n型接触层和p型接触层中的每一个包括AlInGaN或AlGaN层，并且电子控制层由AlInGaN或AlGaN形成。此外，电子控制层包含比相邻层更大量的Al，以阻止电子流入有源区域。因此，电子迁移率恶化，从而提高有源区域中的电子和空穴的复合率。

10. 发明申请

US20160064598A1 ULTRAVIOLET LIGHT-EMITTING DEVICE 有权
标题翻译：超紫外线发光装置
公开(公告)号：US20160064598A1
公开(公告)日：2016-03-03
申请号：US14784007
申请日：2014-03-07
申请人： SEOUL VIOSYS CO., LTD.
发明人： Hyo Shik Choi , Jung Hwan Hwang , Chang Suk Han
IPC分类号： H01L33/06 , H01L33/14 , H01L33/00 , H01L33/32
CPC分类号： H01L33/06 , H01L33/0025 , H01L33/04 , H01L33/14 , H01L33/145 , H01L33/32
摘要： Disclosed is an ultraviolet light-emitting device. The light-emitting device includes: an n-type contact layer including a GaN layer; a p-type contact layer including an AlGaN or AlInGaN layer; and an active region of multiple quantum well structure positioned between the n-type contact layer and the p-type contact layer. In addition, the active region of multiple quantum well structure includes a GaN or InGaN layer with a thickness less than 2 nm, radiating an ultraviolet ray with a peak wavelength of 340 nm to 360 nm.
摘要翻译：公开了一种紫外线发光装置。发光器件包括：包括GaN层的n型接触层; 包括AlGaN或AlInGaN层的p型接触层; 以及位于n型接触层和p型接触层之间的多量子阱结构的有源区。此外，多量子阱结构的有源区包括厚度小于2nm的GaN或InGaN层，辐射峰值波长为340nm至360nm的紫外线。

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