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61. 发明申请

US20070193514A1 METHOD AND APPARATUS FOR MEASURING ELECTRON DENSITY OF PLASMA AND PLASMA PROCESSING APPARATUS 有权
公开(公告)号：US20070193514A1
公开(公告)日：2007-08-23
申请号：US11742643
申请日：2007-05-01
申请人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
发明人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
IPC分类号： C23C16/00
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

62. 发明申请

US20070102287A1 METHOD AND APPARATUS FOR AN IMPROVED OPTICAL WINDOW DEPOSITION SHIELD IN A PLASMA PROCESSING SYSTEM 有权
标题翻译：在等离子体处理系统中改进的光学窗口沉积屏蔽的方法和装置
公开(公告)号：US20070102287A1
公开(公告)日：2007-05-10
申请号：US11620289
申请日：2007-01-05
申请人： Shinya Nishimoto , Kouji Mitsuhashi , Hidehito Saigusa , Taira Takase , Hiroyuki Nakayama
发明人： Shinya Nishimoto , Kouji Mitsuhashi , Hidehito Saigusa , Taira Takase , Hiroyuki Nakayama
IPC分类号： C23C14/00
CPC分类号： H01L21/67069 , H01J37/32458 , H01J37/32495 , H01J37/32972
摘要： The present invention presents an improved optical window deposition shield an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously provides an optically clean access to the processing plasma in the process space while sustaining substantially minimal erosion of the optical window deposition shield.
摘要翻译：本发明提出了一种改进的光学窗口沉积屏蔽，用于通过沉积屏蔽对光学访问等离子体处理系统中的处理空间的改进的光学窗口沉积屏蔽，其中光学窗口沉积屏蔽的设计和制造有利地提供光学干净的访问涉及在处理空间中处理等离子体，同时维持基本上最小的光学窗口沉积屏蔽的侵蚀。

63. 发明授权

US07163585B2 Method and apparatus for an improved optical window deposition shield in a plasma processing system 有权
标题翻译：用于等离子体处理系统中改进的光学窗口沉积屏蔽的方法和装置
公开(公告)号：US07163585B2
公开(公告)日：2007-01-16
申请号：US10803994
申请日：2004-03-19
申请人： Shinya Nishimoto , Kouji Mitsuhashi , Hidehito Saigusa , Taira Takase , Hiroyuki Nakayama
发明人： Shinya Nishimoto , Kouji Mitsuhashi , Hidehito Saigusa , Taira Takase , Hiroyuki Nakayama
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： H01L21/67069 , H01J37/32458 , H01J37/32495 , H01J37/32972
摘要： The present invention presents an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously provides an optically clean access to the processing plasma in the process space while sustaining substantially minimal erosion of the optical window deposition shield.
摘要翻译：本发明提出了一种改进的光学窗口沉积屏蔽，用于通过沉积屏蔽件对等离子体处理系统中的处理空间进行光学访问，其中光学窗口沉积屏蔽的设计和制造有利地提供光学干净地访问处理等离子体同时维持光学窗口沉积屏蔽的基本上最小的侵蚀。

64. 发明申请

US20060027324A1 Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20060027324A1
公开(公告)日：2006-02-09
申请号：US11068805
申请日：2005-03-02
申请人： Akitaka Makino , Koichi Mishima , Takashi Kaneko , Toyoharu Okumoto
发明人： Akitaka Makino , Koichi Mishima , Takashi Kaneko , Toyoharu Okumoto
IPC分类号： H01L21/306 , G01L21/30
CPC分类号： H01L21/67253 , G01N21/68 , H01J37/32935 , H01J37/32972
摘要： The present invention provides a plasma processing apparatus that can accomplish fine and precise processing of a sample over a wide area of the surface thereof. A plasma processing apparatus 100 has a processing chamber 101, a sample stage 102 that is supplied with different amounts of coolants at the middle part and the circumference part thereof, and a shower plate 109 that is supplied with different amounts of gases at the middle part and the circumference part thereof. The plasma processing apparatus 100 further has a light-receiving section 125 that receives plasma light emission in the processing chamber 101, a light emission spectrometer 124, a mass spectrometer 129 that analyzes the mass of a gas in a lower space of the processing chamber and a control device 130 and controls flow controllers 120, 121 for controlling the flow rates of the gases supplied into the processing chamber and a coolant flow controller 131 for controlling the flow rates of the coolants supplied to the sample stage 102 using both the data about the light emission analysis and the mass analysis.
摘要翻译：本发明提供一种等离子体处理装置，其能够在其表面的广泛区域上实现样品的精细和精确的处理。等离子体处理装置100具有处理室101，在其中间部分和周围部分处供应不同量的冷却剂的样品台102和在中间部分供应不同量的气体的喷淋板109 及其圆周部分。等离子体处理装置100还具有接收处理室101内的等离子体发光的光接收部125，发光光谱仪124，分析处理室下部空间的气体质量的质谱仪129和控制装置130，并且控制流量控制器120,121，用于控制供应到处理室中的气体的流量;以及冷却剂流量控制器131，用于控制供应给样品台102的冷却剂的流量，光散射分析和质量分析。

65. 发明申请

US20050217794A1 Semiconductor manufacturing apparatus and method for assisting monitoring and analysis of the same 审中-公开
标题翻译：用于辅助其监测和分析的半导体制造装置和方法
公开(公告)号：US20050217794A1
公开(公告)日：2005-10-06
申请号：US10875232
申请日：2004-06-25
申请人： Akira Kagoshima , Shoji Ikuhara , Daisuke Shiraishi
发明人： Akira Kagoshima , Shoji Ikuhara , Daisuke Shiraishi
IPC分类号： H01L21/3065 , C23F1/00 , H01J37/32 , H01L21/02
CPC分类号： H01J37/32935 , H01J37/32972
摘要： To provide a semiconductor manufacturing apparatus that can easily and quickly monitor and analyze the state of a semiconductor processing apparatus and a method for assisting the monitoring and analysis thereof. A semiconductor manufacturing apparatus includes: detecting means 7, 8 that detects, as a plurality of state signals, at least either of a plurality of spectra obtained by separating plasma light emission generated in a processing chamber 2 of a semiconductor processing apparatus 1 or a plurality of apparatus state signals that indicate states of the apparatus; apparatus event information output means 9 that outputs the state of the semiconductor processing apparatus in a current process step; conversion means 14, 17, 18 that converts a combination of the plurality of state signals detected by the detecting means 7, 8 into respective particular figures; and display position controlling means 20 that displays the figures generated by the conversion means 14, 17, 18 at predetermined display positions associated with the process step.
摘要翻译：提供一种半导体制造装置，其可以容易且快速地监视和分析半导体处理装置的状态和辅助其监视和分析的方法。半导体制造装置包括：检测装置7,8，其检测通过分离在半导体处理装置1的处理室2或多个处理室2中产生的等离子体发光而获得的多个光谱中的至少一个作为多个状态信号指示装置的状态的装置状态信号; 装置事件信息输出装置9，其在当前处理步骤中输出半导体处理装置的状态; 转换装置14,17,18将由检测装置7,8检测的多个状态信号的组合转换成相应的特定图形; 以及显示位置控制装置20，其将由转换装置14,17,18生成的图形显示在与处理步骤相关联的预定显示位置处。

66. 发明申请

US20050189069A1 Plasma processing system and method 审中-公开
标题翻译：等离子体处理系统及方法
公开(公告)号：US20050189069A1
公开(公告)日：2005-09-01
申请号：US11082246
申请日：2005-03-17
申请人： Audunn Ludviksson , Eric Strang , Andrej Mitrovic
发明人： Audunn Ludviksson , Eric Strang , Andrej Mitrovic
IPC分类号： C23F1/00 , H01J37/32 , H05H1/00
CPC分类号： H01J37/32871 , H01J37/32477 , H01J37/32495 , H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J2237/022 , H01J2237/028
摘要： A plasma processing system and method for operating a diagnostic system in conjunction with a plasma processing system are provided. The diagnostic system is in communication with a plasma processing chamber of the plasma processing system and includes a diagnostic sensor to detect a plasma process condition. The diagnostic system is configured to substantially reduce contamination of the diagnostic sensor. The method includes substantially reducing contamination of the diagnostic sensor and detecting a condition of the plasma process and/or a substrate in the processing chamber.
摘要翻译：提供了一种与等离子体处理系统一起操作诊断系统的等离子体处理系统和方法。诊断系统与等离子体处理系统的等离子体处理室通信，并且包括用于检测等离子体处理条件的诊断传感器。诊断系统被配置为基本上减少诊断传感器的污染。该方法包括显着减少诊断传感器的污染并检测处理室中的等离子体处理和/或衬底的状况。

67. 发明授权

US06923885B2 Plasma processing system and apparatus and a sample processing method 有权
标题翻译：等离子体处理系统和设备及样品处理方法
公开(公告)号：US06923885B2
公开(公告)日：2005-08-02
申请号：US10732286
申请日：2003-12-11
申请人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
发明人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67069 , G01N21/68 , H01J37/32082 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.
摘要翻译：一种等离子体处理装置，其具有位于真空室中的样品台，设置在与放置在样品台上的样品相对的位置并且面对在真空室中产生的等离子体的结构，以及设置在该结构中的至少一个通孔气体通过该气体流入真空室。光传输器安装在所述至少一个通孔的背面上，来自所述样品的光通过所述至少一个通孔穿过，所述光通过所述光发射器检测。

68. 发明授权

US06878214B2 Process endpoint detection in processing chambers 有权
标题翻译：处理室中的过程终点检测
公开(公告)号：US06878214B2
公开(公告)日：2005-04-12
申请号：US10057037
申请日：2002-01-24
申请人： Laxman Murugesh , Gary R. Ahr
发明人： Laxman Murugesh , Gary R. Ahr
IPC分类号： H01J37/32 , H01L21/00 , H01L21/205 , H01L21/3065 , B08B7/04
CPC分类号： H01L21/67253 , H01J37/32862 , H01J37/32935 , H01J37/32963 , H01J37/32972 , Y10S438/905
摘要： Method and apparatus for determining an endpoint of a cleaning process running in a chamber. In particular, one embodiment of the present invention is a method that includes steps of: (a) directing radiation absorbed by a byproduct of the cleaning process into an exhaust line of the chamber; (b) detecting a measure of absorbance of the radiation by the byproduct; and (c) determining the endpoint when the measure of absorbance falls within a predetermined window.
摘要翻译：用于确定在室中运行的清洁过程的终点的方法和装置。特别地，本发明的一个实施例是一种方法，其包括以下步骤：（a）将由清洁过程的副产物吸收的辐射引导到腔室的排气管线中; （b）检测副产物对辐射的吸光度的测量; 和（c）当吸光度测量落在预定窗口内时确定终点。

69. 发明授权

US06867859B1 Inductively coupled plasma spectrometer for process diagnostics and control 失效
标题翻译：用于过程诊断和控制的电感耦合等离子体光谱仪
公开(公告)号：US06867859B1
公开(公告)日：2005-03-15
申请号：US09631271
申请日：2000-08-02
申请人： Gary Powell
发明人： Gary Powell
IPC分类号： G01J3/443 , G01N21/73 , H01J37/32 , H01L21/00 , G01J3/30
CPC分类号： H01L21/67253 , G01J3/443 , G01N21/73 , H01J37/32935 , H01J37/32972 , H01L21/67069
摘要： The present invention relates to an apparatus and method for forming a plasma in the exhaust line of a primary process reactor. The plasma is generated in an inductive source (5) to examine the chemical concentrations of the waste or exhaust gas in vacuum lines that are below atmospheric pressure. The optical radiation emitted by the plasma is analyzed by an optical spectrometer (9) and the resulting information is used to diagnose, monitor, or control operating states in the main vacuum vessel.
摘要翻译：本发明涉及在一级工艺反应器的排气管线中形成等离子体的装置和方法。在感应源（5）中产生等离子体，以检查低于大气压的真空管线中的废物或废气的化学浓度。通过光谱仪（9）分析由等离子体发射的光辐射，并且所得到的信息用于诊断，监测或控制主真空容器中的操作状态。

70. 发明授权

US06797939B2 Method for monitoring plasma or flame-spray processes 失效
标题翻译：监测等离子体或火焰喷涂工艺的方法
公开(公告)号：US06797939B2
公开(公告)日：2004-09-28
申请号：US10219816
申请日：2002-08-16
申请人： Erwin Bayer , Jörg Höschele , Stefan Schneiderbanger , Jürgen Steinwandel
发明人： Erwin Bayer , Jörg Höschele , Stefan Schneiderbanger , Jürgen Steinwandel
IPC分类号： G01J350
CPC分类号： C23C4/12 , H01J37/32972 , H05H1/0037
摘要： A method for measuring characteristic properties of a plasma beam in a thermal spraying process, wherein the spraying materials are fed into the plasma (1) and the luminous radiation emitted by the plasma (1) is reproduced on optical fibers (2). The luminous radiation is reproduced on the one end (2a) of the optical fibers (2) arranged in a one-dimensional or two-dimensional array (6). Spectral analysis of the luminous radiation transmitted in the optical fiber (2) is accomplished with a spectrometer (3) arranged at the other end (2b) of an optical fiber (2). The frequency spectrums are analyzed in a processor (5) to determine the contemporaneous condition of the spraying process.
摘要翻译：一种用于在热喷涂工艺中测量等离子体束的特性的方法，其中喷射材料被馈送到等离子体（1）中，并且由等离子体（1）发射的发光被再现在光纤（2）上。在以一维或二维阵列（6）布置的光纤（2）的一端（2a）上再现发光。在光纤（2）中发射的发光的光谱分析是通过布置在光纤（2）的另一端（2b）处的光谱仪（3）完成的。在处理器（5）中分析频谱以确定喷雾过程的同时期条件。

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