专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US07610667B2 Method of connecting expandable tubulars 失效
标题翻译：连接可膨胀管的方法
公开(公告)号：US07610667B2
公开(公告)日：2009-11-03
申请号：US11339202
申请日：2006-01-25
申请人： Ghazi J. Hashem
发明人： Ghazi J. Hashem
IPC分类号： B21D39/00 , F16L13/14 , F16L15/00 , F16L13/02
CPC分类号： E21B43/106 , C23C16/0218 , C23C16/40 , C23C16/401 , C23C16/405 , C23C16/4405 , C23C16/56 , E21B43/103 , E21B43/105 , F16L15/006 , F16L2201/00 , Y10T29/49911
摘要： A method and apparatus for providing an expandable threaded connection between segments of expandable tubulars. Threaded connections are machined into pre-expanded ends of tubulars. Once the threaded connections are machined into the pre-expanded ends, two joints of tubulars are connected using the threads, thus creating a pre-expanded threaded connection. After a tubular string is made up and lowered into a wellbore, the entire length of the string is expanded using known methods for expanding tubulars. During the downhole expansion operation, the pre-expanded threaded connections experience minimal expansion. The minimal downhole expansion of the pre-expanded threaded connections allows the threaded connections to maintain their sealing ability and coupling strength.
摘要翻译：一种用于在可扩展管状段之间提供可膨胀螺纹连接的方法和装置。螺纹连接被加工成管状的预扩展端。一旦将螺纹连接机加工成预扩展端，则使用螺纹连接两个管状接头，从而产生预扩展螺纹连接。在将管状绳制成并降低到井筒中之后，使用已知的用于膨胀管的方法来扩张绳的整个长度。在井下扩展操作期间，预扩展的螺纹连接具有最小的扩展。预膨胀螺纹连接件的最小井下扩张允许螺纹连接件保持其密封能力和联接强度。

62. 发明申请

US20090186481A1 METHOD FOR INTEGRATING SELECTIVE LOW-TEMPERATURE RUTHENIUM DEPOSITION INTO COPPER METALLIZATION OF A SEMICONDUCTOR DEVICE 有权
标题翻译：将选择性低温RUMENIUM沉积物集成到半导体器件的铜金属化中的方法
公开(公告)号：US20090186481A1
公开(公告)日：2009-07-23
申请号：US12018074
申请日：2008-01-22
申请人： Kenji SUZUKI , Miho JOMEN , Jonathan RULLAN
发明人： Kenji SUZUKI , Miho JOMEN , Jonathan RULLAN
IPC分类号： H01L21/4763
CPC分类号： H01L21/76849 , C23C16/0218 , C23C16/16 , C23C16/4482 , H01L21/28562 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for integrating low-temperature selective Ru metal deposition into manufacturing of semiconductor devices to improve electromigration and stress migration in bulk Cu metal. The method includes providing a patterned substrate containing a recessed feature in a dielectric layer, where the recessed feature is at least substantially filled with planarized bulk Cu metal, heat-treating the bulk Cu metal and the dielectric layer in the presence of H2, N2, or NH3, or a combination thereof, and selectively depositing a Ru metal film on the heat-treated planarized bulk Cu metal.
摘要翻译：将低温选择性Ru金属沉积集成到半导体器件制造中的方法，以改善体Cu金属中的电迁移和应力迁移。该方法包括提供在电介质层中含有凹陷特征的图案化衬底，其中凹陷特征至少基本上被平坦化的本体Cu金属填充，在H 2，N 2存在下热处理本体Cu金属和电介质层，或NH 3或其组合，并且在热处理的平坦化Cu体上选择性地沉积Ru金属膜。

63. 发明授权

US07531468B2 System and method for forming a gate dielectric 失效
标题翻译：用于形成栅极电介质的系统和方法
公开(公告)号：US07531468B2
公开(公告)日：2009-05-12
申请号：US11929087
申请日：2007-10-30
申请人： Craig R. Metzner , Shreyas S. Kher , Shixue Han
发明人： Craig R. Metzner , Shreyas S. Kher , Shixue Han
IPC分类号： H01L21/31
CPC分类号： H01L21/02307 , C23C14/083 , C23C14/10 , C23C14/5806 , C23C14/5826 , C23C14/5853 , C23C14/586 , C23C16/0218 , C23C16/0227 , C23C16/405 , C23C16/56 , H01L21/02148 , H01L21/02181 , H01L21/022 , H01L21/02205 , H01L21/02271 , H01L21/02337 , H01L21/28194 , H01L21/3141 , H01L21/3143 , H01L21/31604 , H01L21/31612 , H01L21/3162 , H01L21/31645 , H01L21/31683 , H01L29/517 , H01L29/78
摘要： A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydrofluoric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack on the pre-treated surface and providing a flow of NH3 in a process zone surrounding the wafer. Alternately, the method includes pre-treating the HF-last surface with NH3, forming the stack after the pre-treating, and providing a flow of N2 in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming. The pre-treating includes providing an inert gas flow in a process zone surrounding the HF-last surface, reacting hydrogen with an oxidizer in the process zone for a very short duration, and providing an inert gas flew in the process zone after the reacting.
摘要翻译：在预处理表面上形成电介质叠层的方法。该方法包括预先清洁半导体晶片以除去天然氧化物，例如通过施加氢氟酸以形成HF最后表面，用臭氧化的去离子水预处理HF-最后的表面，在预处理表面，并在围绕晶片的工艺区域中提供NH 3流。或者，该方法包括用NH 3预处理HF-最后表面，在预处理之后形成堆叠，并且在成形之后在晶片周围的处理区域中提供N2流。该方法还包括使用原位蒸汽产生过程预处理HF-最后的表面，在预处理的表面上形成叠层，以及在成形后退火晶片。预处理包括在围绕HF最后表面的处理区域中提供惰性气体流，使处理区中的氢与氧化剂反应非常短的时间，并且在反应之后在处理区中提供惰性气体。

64. 发明申请

US20080261413A1 PRETREATMENT PROCESSES WITHIN A BATCH ALD REACTOR 失效
标题翻译：在BATCH ALD反应器中的预处理过程
公开(公告)号：US20080261413A1
公开(公告)日：2008-10-23
申请号：US12163876
申请日：2008-06-27
申请人： Maitreyee Mahajani
发明人： Maitreyee Mahajani
IPC分类号： H01L21/31
CPC分类号： H01L21/3141 , C23C16/0218 , C23C16/405 , C23C16/45531 , C23C16/45546 , H01L21/3142
摘要： Embodiments of the invention provide methods for forming a hafnium material on a substrate within a processing chamber. In one embodiment, a method is provided which includes exposing the substrate within the processing chamber to a first oxidizing gas during a pretreatment process, exposing the substrate sequentially to a second oxidizing gas and a deposition gas during an atomic layer deposition (ALD) cycle, wherein the second oxidizing gas contains water and the deposition gas contains a hafnium amino compound, and repeating the ALD cycle to form a hafnium-containing layer having a thickness within a range from about 5 Å to about 300 Å. In one example, the first oxidizing gas contains an O3/O2 mixture having an ozone concentration within a range from about 5 atomic percent to about 30 atomic percent.
摘要翻译：本发明的实施例提供了在处理室内的基板上形成铪材料的方法。在一个实施例中，提供了一种方法，其包括在预处理过程中将处理室内的衬底暴露于第一氧化气体，在原子层沉积（ALD）循环期间将衬底依次暴露于第二氧化气体和沉积气体，其中所述第二氧化气体含有水，并且所述沉积气体含有铪氨基化合物，并且重复所述ALD循环以形成厚度在约至约的范围内的含铪层。在一个实例中，第一氧化气体含有臭氧浓度在约5原子％至约30原子百分比范围内的O 3/3 O 2 O 2混合物。

65. 发明授权

US07377976B2 Method for growing thin oxide films 有权
标题翻译：生长薄氧化膜的方法
公开(公告)号：US07377976B2
公开(公告)日：2008-05-27
申请号：US11210240
申请日：2005-08-22
申请人： Mikko Ritala , Antti Rahtu , Markku Leskela , Kaupo Kukli
发明人： Mikko Ritala , Antti Rahtu , Markku Leskela , Kaupo Kukli
IPC分类号： C30B25/18
CPC分类号： C23C16/45527 , C23C16/0218 , C23C16/0272 , C23C16/40 , C23C16/45531 , C30B25/02 , C30B25/18 , C30B29/16
摘要： A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal source material may be a metal halide, hydride, alkoxide, alkyl, a cyclopentadienyl compound, or a diketonate.
摘要翻译：提供了一种用于通过交替地使基板的表面与金属源材料和氧源材料反应来在衬底的表面上生长薄氧化膜的方法。氧源材料优选为金属醇盐。金属源材料可以是金属卤化物，氢化物，醇盐，烷基，环戊二烯基化合物或二酮酸盐。

66. 发明申请

US20080078325A1 PROCESSING SYSTEM CONTAINING A HOT FILAMENT HYDROGEN RADICAL SOURCE FOR INTEGRATED SUBSTRATE PROCESSING 审中-公开
标题翻译：含有热液体氢源的加工系统，用于集成基板加工
公开(公告)号：US20080078325A1
公开(公告)日：2008-04-03
申请号：US11537562
申请日：2006-09-29
申请人： Tsukasa Matsuda , Isamu Sakuragi
发明人： Tsukasa Matsuda , Isamu Sakuragi
IPC分类号： C23C16/00
CPC分类号： C23C16/18 , C23C16/0218 , C23C16/34 , C23C16/44 , C23C16/45536 , H01L21/02063 , H01L21/02126 , H01L21/02321 , H01L21/02337 , H01L21/02362 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/31633 , H01L21/67069 , H01L21/76814 , H01L21/76846 , H01L21/76873
摘要： A processing system for integrated substrate processing in a substrate processing tool. The processing system contains a substrate holder configured for supporting and controlling the temperature of the substrate, a hot filament hydrogen radical source for generating hydrogen radicals, and a controller configured for controlling the processing system. The hot filament hydrogen radical source includes a showerhead assembly containing an internal volume and a showerhead plate having gas passages facing the substrate for exposing the substrate to the hydrogen radicals, and at least one metal wire filament within the internal volume to thermally dissociate H2 gas into the hydrogen radicals.
摘要翻译：一种用于基板处理工具中的集成基板处理的处理系统。所述处理系统包括：衬底保持器，其构造成用于支撑和控制所述衬底的温度，用于产生氢自由基的热丝氢自由基源;以及被配置为控制所述处理系统的控制器。热丝氢自由基源包括含有内部体积的喷头组件和具有面向衬底的气体通道的喷头组件，用于将衬底暴露于氢自由基，以及内部体积内的至少一个金属丝细丝以使H

67. 发明申请

US20080032064A1 Selective sealing of porous dielectric materials 审中-公开
标题翻译：多孔绝缘材料的选择性密封
公开(公告)号：US20080032064A1
公开(公告)日：2008-02-07
申请号：US11827131
申请日：2007-07-10
申请人： Roy Gordon , Daewon Hong
发明人： Roy Gordon , Daewon Hong
IPC分类号： C23C16/00
CPC分类号： C23C16/045 , C23C16/0218 , C23C16/402 , C23C16/45525 , C23C16/45534 , C23C16/45553
摘要： This invention relates to materials and processes for selective deposition of silica films on non-metallic areas of substrates while avoiding any significant deposition on metallic conductive areas. Silica sealed the surface pores of a porous dielectric by the reaction of an aluminum-containing compound with an alkoxysilanol. Metal layers are protected from this deposition of silica by adsorption of a partially fluorinated alkanethiol. This invention provides processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. At the same time, a clean metal surface is produced, so that low electrical resistances of connections between copper layers are maintained. The combination of low-k dielectric constant and low resistance allows construction of microelectronic devices operating at high speeds.
摘要翻译：本发明涉及用于在衬底的非金属区域上选择性沉积二氧化硅膜的材料和方法，同时避免金属导电区域上的任何显着沉积。二氧化硅通过含铝化合物与烷氧基硅烷醇的反应来密封多孔电介质的表面孔。通过吸附部分氟化的链烷硫醇来保护金属层免于二氧化硅的沉积。本发明提供了生产半孔介电材料的方法，其中表面孔隙率被显着减少或去除，同时保持内部孔隙度以维持整个电介质材料的期望的低k值。同时，产生清洁的金属表面，从而保持铜层之间的连接的低电阻。低k介电常数和低电阻的组合允许构建以高速运行的微电子器件。

68. 发明授权

US07326657B2 Post-deposition treatment to enhance properties of Si-O-C low k films 有权
标题翻译：后沉积处理以提高Si-O-C低k膜的性能
公开(公告)号：US07326657B2
公开(公告)日：2008-02-05
申请号：US10990251
申请日：2004-11-15
申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/02071 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/3146 , H01L21/31604 , H01L21/31612 , H01L21/31633 , H01L21/76807 , H01L21/76826 , H01L21/76837 , Y10S438/931
摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
摘要翻译：一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。致密化通常在还原环境中进行，同时加热基底。致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

69. 发明授权

US07304004B2 System and method for forming a gate dielectric 失效
标题翻译：用于形成栅极电介质的系统和方法
公开(公告)号：US07304004B2
公开(公告)日：2007-12-04
申请号：US10913941
申请日：2004-08-06
申请人： Craig R. Metzner , Shreyas S. Kher , Shixue Han
发明人： Craig R. Metzner , Shreyas S. Kher , Shixue Han
IPC分类号： H01L21/31
CPC分类号： H01L21/02307 , C23C14/083 , C23C14/10 , C23C14/5806 , C23C14/5826 , C23C14/5853 , C23C14/586 , C23C16/0218 , C23C16/0227 , C23C16/405 , C23C16/56 , H01L21/02148 , H01L21/02181 , H01L21/022 , H01L21/02205 , H01L21/02271 , H01L21/02337 , H01L21/28194 , H01L21/3141 , H01L21/3143 , H01L21/31604 , H01L21/31612 , H01L21/3162 , H01L21/31645 , H01L21/31683 , H01L29/517 , H01L29/78
摘要： A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack on the pre-treated surface and providing a flow of NH3 in a process zone surrounding the wafer. Alternately, the method includes pre-treating the HF-last surface with NH3, forming the stack after the pre-treating, and providing a flow of N2 in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming. The pre-treating includes providing an inert gas flow in a process zone surrounding the HF-last surface, reacting hydrogen with an oxidizer in the process zone for a very short duration, and providing an inert gas flew in the process zone after the reacting.
摘要翻译：在预处理表面上形成电介质叠层的方法。该方法包括预先清洁半导体晶片以除去天然氧化物，例如通过施加氢氟酸以形成HF-最后的表面，用臭氧化的去离子水预处理HF-最后的表面，在预处理表面，并在围绕晶片的工艺区域中提供NH 3 3流。或者，该方法包括用NH 3预处理HF-最后表面，在预处理之后形成堆叠，并且在工艺中提供N 2 O 3流成形后的晶片周围的区域。该方法还包括使用原位蒸汽产生过程预处理HF-最后的表面，在预处理的表面上形成叠层，以及在成形后退火晶片。预处理包括在围绕HF最后表面的处理区域中提供惰性气体流，使处理区中的氢与氧化剂反应非常短的时间，并且在反应之后在处理区中提供惰性气体。

70. 发明授权

US07244667B2 Method and device for the production of thin epitaxial semiconductor layers 有权
标题翻译：用于生产薄外延半导体层的方法和装置
公开(公告)号：US07244667B2
公开(公告)日：2007-07-17
申请号：US10484975
申请日：2002-07-25
申请人： Bernd Tillack , Dirk Wolansky , Georg Ritter , Thomas Grabolla
发明人： Bernd Tillack , Dirk Wolansky , Georg Ritter , Thomas Grabolla
IPC分类号： H01L21/205
CPC分类号： H01L21/02529 , C23C16/0218 , C23C16/54 , H01L21/02532 , H01L21/0262 , H01L21/02658
摘要： System for producing diffusion-inhibiting epitaxial semiconductor layers, by means of which thin diffusion-inhibiting, epitaxial semiconductor layers can be produced on large semiconductor substrates at a high throughput.The surfaces of the semiconductor substrates to be coated are first cleaned, and the substrates are then heated in a low pressure batch reactor to a first temperature (prebake temperature). The surfaces to be coated are next subjected to a hydrogen prebake operation at a first reactor pressure. In the next step the semiconductor substrates are heated in a low pressure hot or warm wall batch reactor to a second temperature (deposition temperature) lower than the first temperature, and after a condition of thermodynamic equilibrium is reached the diffusion-inhibiting semiconductor layers are deposited on the surfaces to be coated in a chemical gaseous deposition process (CVD) at a second reactor pressure higher than, equal to or lower than the first reactor pressure.
摘要翻译：用于制造扩散抑制外延半导体层的系统，通过该系统，可以在大的半导体衬底上以高通量产生薄的扩散抑制性外延半导体层。首先清洁待涂覆的半导体衬底的表面，然后将衬底在低压间歇反应器中加热到第一温度（预烘烤温度）。待涂覆的表面接下来在第一反应器压力下进行氢预烘烤操作。在下一步骤中，将半导体衬底在低压热或温壁间歇反应器中加热到低于第一温度的第二温度（沉积温度），并且在达到热力学平衡条件之后，沉积扩散抑制半导体层在高于等于或低于第一反应器压力的第二反应器压力下在化学气相沉积工艺（CVD）中待涂覆的表面上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式