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61. 发明申请

US20150140691A1 SYSTEMS AND METHODS FOR CHEMICAL MECHANICAL PLANARIZATION WITH FLUORESCENCE DETECTION 有权
标题翻译：具有荧光检测的化学机械平面化的系统与方法
公开(公告)号：US20150140691A1
公开(公告)日：2015-05-21
申请号：US14083818
申请日：2013-11-19
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： I-SHUO LIU , HUI-CHI HUANG , JUNG-TSAN TSAI , CHIEN-PING LEE
IPC分类号： H01L21/306 , H01L21/67 , H01L21/66 , B01J19/00
CPC分类号： H01L22/26 , B24B37/005 , B24B37/044 , B24B37/205 , B24B49/12 , H01L21/3212 , H01L22/12
摘要： Systems and methods are provided for performing chemical-mechanical planarization on an article. An example system for performing chemical-mechanical planarization on an article includes a polishing head configured to perform a chemical-mechanical planarization (CMP) on an article, a polishing pad configured to support the article, a light source configured to emit an incident light, a polishing fluid including a plurality of emitter particles capable of emitting a fluorescent light in response to the incident light, a fluorescence light detector configured to detect the fluorescent light, and at least one processor configured to control the polishing head based on the detected fluorescent light.
摘要翻译：提供了用于在制品上进行化学 - 机械平面化的系统和方法。用于在物品上进行化学机械平坦化的示例性系统包括：抛光头，被配置为对物品执行化学机械平面化（CMP）;抛光垫，其被配置为支撑物品;被配置为发射入射光的光源; 包括能够响应于入射光而发射荧光的多个发射体颗粒的抛光液，配置成检测荧光的荧光光检测器，以及配置成基于检测到的荧光控制抛光头的至少一个处理器。

62. 发明授权

US09028572B2 Polishing composition and method utilizing abrasive particles treated with an aminosilane 有权
标题翻译：使用用氨基硅烷处理的磨料颗粒的抛光组合物和方法
公开(公告)号：US09028572B2
公开(公告)日：2015-05-12
申请号：US12234237
申请日：2008-09-19
申请人： Steven Grumbine , Shoutian Li , William Ward , Pankaj Singh , Jeffrey Dysard
发明人： Steven Grumbine , Shoutian Li , William Ward , Pankaj Singh , Jeffrey Dysard
IPC分类号： C09K3/14 , B24B37/04 , C09G1/02 , H01L21/3105
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1436 , C09K3/1463 , H01L21/31053
摘要： The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.
摘要翻译：本发明的方法包括用本发明的抛光组合物对基材进行化学机械抛光，所述抛光组合物包含液体载体和已经用化合物处理的磨料颗粒。

63. 发明申请

US20150111383A1 COMPOSITION FOR SILICON WAFER POLISHING LIQUID 审中-公开
标题翻译：硅溶胶抛光液组合物
公开(公告)号：US20150111383A1
公开(公告)日：2015-04-23
申请号：US14394985
申请日：2013-04-16
申请人： Kao Corporation
发明人： Joji Miura , Yoshiaki Matsui , Yuki Kato , Yuki Kotaka
IPC分类号： C09G1/02 , H01L21/306 , H01L21/02
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1436 , C09K3/1463 , H01L21/02019 , H01L21/02024 , H01L21/30625
摘要： A polishing liquid composition for a silicon wafer, wherein the composition comprises silica particles (component A), at least one kind of nitrogen-containing basic compound (component B) selected from an amine compound and an ammonium compound, and a water-soluble macromolecular compound (component C) that contains 10 wt % or more of a constitutional unit I represented by a general formula (1) below and has a weight average molecular weight of 50,000 or more and 1,500,000 or less; and the pH at 25° C. is 8.0 to 12.0. In the general formula (1), R1 and R2 each independently represents a hydrogen, a C1 to C8 alkyl group, or a C1 to C2 hydroxyalkyl group, and R1 and R2 are never both hydrogens.
摘要翻译：一种用于硅晶片的抛光液体组合物，其中所述组合物包含二氧化硅颗粒（组分A），至少一种选自胺化合物和铵化合物的含氮碱性化合物（组分B）和水溶性大分子化合物（组分C），其含有10重量％以上由下述通式（1）表示的结构单元I，重均分子量为50,000以上且1,500,000以下; 25℃下的pH为8.0〜12.0。在通式（1）中，R 1和R 2各自独立地表示氢，C 1至C 8烷基或C 1至C 2羟烷基，并且R 1和R 2不能都是氢。

64. 发明申请

US20150050862A1 POLISHING COMPOSITION AND METHOD USING SAID POLISHING COMPOSITION TO MANUFACTURE COMPOUND SEMICONDUCTOR SUBSTRATE 有权
标题翻译：抛光组合物和使用固体抛光组合物制造化合物半导体基板的方法
公开(公告)号：US20150050862A1
公开(公告)日：2015-02-19
申请号：US14381373
申请日：2013-03-04
申请人： FUJIMI INCORPORATED
发明人： Masayuki Serikawa , Tomomi Akiyama
IPC分类号： C09G1/02 , H01L21/306 , B24B37/04
CPC分类号： C09G1/02 , B24B37/044 , H01L21/02024 , H01L21/302 , H01L21/30625 , H01L29/1608 , H01L29/2003
摘要： A polishing composition contains abrasive grains and water. 50% by mass or more of the abrasive grains consists of particles A having particle sizes between 40 nm and 80 nm inclusive, and 10% by mass or more of the abrasive grains consists of particles B having particle sizes between 150 nm and 300 nm inclusive. The polishing composition is used to polish a surface of a compound semiconductor substrate.
摘要翻译：抛光组合物含有磨粒和水。 50质量％以上的磨粒由粒径在40nm〜80nm的粒子A构成，10质量％以上的磨粒由粒径为150nm〜300nm的粒子B构成，。抛光组合物用于抛光化合物半导体衬底的表面。

65. 发明授权

US08932110B2 Method of manufacturing perpendicular magnetic recording medium substrate and perpendicular magnetic recording medium substrate manufactured by the same 有权
标题翻译：制造垂直磁记录介质基板和垂直磁记录介质基板的方法
公开(公告)号：US08932110B2
公开(公告)日：2015-01-13
申请号：US13045918
申请日：2011-03-11
申请人： Shoji Sakaguchi , Masaoki Miyakoshi , Jun Natsume
发明人： Shoji Sakaguchi , Masaoki Miyakoshi , Jun Natsume
IPC分类号： B24B1/00 , B24B37/04 , B24B37/013 , B24B37/24 , C09G1/02 , C09K3/14 , G11B5/84 , G11B5/73
CPC分类号： B24B37/044 , B24B37/013 , B24B37/245 , C09G1/02 , C09K3/1463 , G11B5/8404
摘要： A method of manufacturing a perpendicular magnetic recording medium substrate is capable of reducing the waviness of all wavelength components and a recording medium is capable of reducing contact with a magnetic head to improve the flying stability of the magnetic head. The method includes two polishing operations. The first operation includes polishing a substrate having a Ni—P-based alloy underlayer with a first porous material that includes 0.1 wt % to 25 wt % of alumina, titania, silica, and zirconia abrasive while supplying a first slurry liquid including an organic or inorganic acid and a first abrasive to the underlayer of the substrate. The second operation includes polishing a surface of the underlayer polished in the first polishing with a second porous material while supplying a second slurry liquid including an organic or inorganic acid and a second abrasive with a grain diameter smaller than that of the first abrasive.
摘要翻译：垂直磁记录介质基板的制造方法能够减少所有波长成分的波纹，记录介质能够减小与磁头的接触，提高磁头的飞行稳定性。该方法包括两次抛光操作。第一操作包括：在第一浆料液体的同时，提供含有Ni-P基合金底层的基材，该第一多孔材料包括0.1重量％至25重量％的氧化铝，二氧化钛，二氧化硅和氧化锆磨料，无机酸和基材的底层的第一研磨剂。第二操作包括用第二多孔材料抛光在第一抛光中抛光的底层的表面，同时提供包括有机或无机酸的第二浆料液体和具有小于第一研磨剂粒径的第二研磨剂。

66. 发明申请

US20140370707A1 POLISHING LIQUID FOR METAL AND POLISHING METHOD 审中-公开
标题翻译：用于金属和抛光方法的抛光液
公开(公告)号：US20140370707A1
公开(公告)日：2014-12-18
申请号：US14376382
申请日：2013-01-29
申请人： Hitachi Chemical Company, Ltd.
发明人： Yasuhiro Ichige , Kouji Haga , Seiichi Kondo
IPC分类号： H01L21/321 , C09K3/14
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/00 , C09G1/02 , C09K3/1409 , C09K3/1463 , C09K3/1472 , C23F1/00 , C23F1/14
摘要： The present invention relates to a metal polishing liquid for polishing at least a part of metal in a substrate having the metal, comprising, component A: a metal solubilizer containing amino acids, component B: compounds having the benzotriazole skeleton, and component C: an acrylic acid polymer having the weight average molecular weight of 10,000 or more, and having the mass ratio between the component B and the component C, (component B:component C), to be 1:1 to 1:5. Use of the metal polishing liquid can simultaneously yield high polishing rates and low etching rates at higher level, enabling to form an embedded pattern with higher reliability.
摘要翻译：本发明涉及一种用于抛光具有金属的基材中的至少一部分金属的金属抛光液，其包含组分A：含有氨基酸的金属增溶剂，组分B：具有苯并三唑骨架的化合物和组分C：重量平均分子量为10,000以上，并且成分B与成分C（成分B：成分C）之间的质量比为1：1〜1：5的丙烯酸类聚合物。金属抛光液的使用可以同时产生更高水平的高抛光速率和低蚀刻速率，从而能够形成具有更高可靠性的嵌入图案。

67. 发明申请

US20140342562A1 POLISHING COMPOSITION 有权
标题翻译：抛光组合物
公开(公告)号：US20140342562A1
公开(公告)日：2014-11-20
申请号：US14359252
申请日：2012-11-21
申请人： FUJIMI INCORPORATED
发明人： Shuugo Yokota , Yasuyuki Yamato , Satoru Yarita , Tomohiko Akatsuka , Shuichi Tamada
IPC分类号： C09G1/02 , H01L21/306
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1409 , H01L21/30625 , H01L21/31053 , H01L21/8258
摘要： A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises odd-shaped abrasive grains and an oxidizing agent having a standard electrode of 0.3 V or more, and preferably further contains a salt, such as an ammonium salt. The pH of the polishing composition is 1 or more and 6 or less, or 8 or more and 14 or less. The average degree of association of the abrasive grains, obtained by dividing the value of the average secondary particle diameter of the abrasive grains by the value of the average primary particle diameter of the abrasive grains, is preferably 1.6 or more.
摘要翻译：本发明的抛光组合物用于抛光包含含有高迁移率材料的部分和含有硅材料的部分的物体。抛光组合物包含异形磨粒和标准电极为0.3V以上的氧化剂，优选还含有盐，例如铵盐。抛光组合物的pH为1以上6以下，8以上14以下。通过将磨粒的平均二次粒径的值除以磨粒的平均一次粒径的值得到的磨粒的平均结合度优选为1.6以上。

68. 发明申请

US20140335763A1 POLISHING LIQUID COMPOSITION FOR MAGNETIC DISK SUBSTRATE 审中-公开
标题翻译：磁性液体基质抛光液组合物
公开(公告)号：US20140335763A1
公开(公告)日：2014-11-13
申请号：US14446156
申请日：2014-07-29
申请人： Kao Corporation
发明人： Yoshiaki OSHIMA , Takeshi HAMAGUCHI , Kanji SATO , Norihito YAMAGUCHI , Haruhiko DOI
IPC分类号： C09G1/02 , B24B29/00 , C01B33/14
CPC分类号： C09G1/02 , B24B29/00 , B24B37/044 , B24B37/048 , C01B33/14 , C03C19/00 , C09K3/1409 , C09K3/1463 , G11B5/8404
摘要： The present invention provides a polishing composition for a magnetic disk substrate that can reduce scratches and surface roughness of a polished substrate without impairing the productivity, and a method for manufacturing a magnetic disk substrate using the polishing composition. The polishing composition for a magnetic disk substrate includes colloidal silica having a ΔCV value of 0 to 10% and water. The ΔCV value is a difference (ΔCV=CV30−CV90) between a value (CV30) obtained by dividing a standard deviation based on a scattering intensity distribution at a detection angle of 30° according to a dynamic light scattering method by an average particle size based on the scattering intensity distribution and multiplying the result by 100 and a value (CV90) obtained by dividing a standard deviation based on a scattering intensity distribution at a detection angle of 90° according to the dynamic light scattering method by an average particle size based on the scattering intensity distribution and multiplying the result by 100.
摘要翻译：本发明提供一种磁盘基板用抛光组合物，其能够降低抛光基板的划痕和表面粗糙度而不损害生产率，以及使用该研磨用组合物的磁盘基板的制造方法。用于磁盘衬底的抛光组合物包括具有＆Dgr; CV值为0至10％的胶体二氧化硅和水。根据动态光散射法，通过根据动态光散射法以30°的检测角度的散射强度分布除以标准偏差而获得的值（CV30）之间的差值（＆Dgr; CV = CV30-CV90）基于散射强度分布的平均粒径，并将结果乘以100，并将根据动态光散射法的基于散射强度分布的标准偏差除以90°的检测角获得的值（CV90），通过基于散射强度分布的平均粒度，并将结果乘以100。

69. 发明申请

US20140263167A1 POLISHING COMPOSITION AND POLISHING METHOD USING SAME, AND SUBSTRATE MANUFACTURING METHOD 审中-公开
标题翻译：使用相同的抛光组合物和抛光方法以及基板制造方法
公开(公告)号：US20140263167A1
公开(公告)日：2014-09-18
申请号：US14355620
申请日：2012-11-08
申请人： FUJIMI INCORPORATED
发明人： Yoshihiro Kachi , Tomoe Tanaka , Takahiro Umeda
IPC分类号： H05K3/26 , C09G1/02
CPC分类号： H05K3/26 , B23H5/08 , B24B1/00 , B24B37/044 , C09G1/00 , C09G1/02 , C09G1/04 , C09G1/06 , C09K3/1436 , C09K3/1454 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/3212
摘要： Provided is a polishing composition to be used for polishing an object including a conductor layer and an electrically conductive material layer that is in contact with the conductor layer. In a state in which the positive electrode and the negative electrode of an electrometer are connected to the electrically conductive material layer and the conductor layer, respectively, in the polishing composition at ordinary temperature, the current flowing from the positive electrode to the negative electrode has a positive value or is zero when the electrically conductive material layer and the conductor layer are polished. The polishing composition preferably contains a nitrogen atom-containing compound, a sulfur atom-containing compound, or a phosphorus atom-containing compound as an additive to control the value of the current to positive or zero.
摘要翻译：本发明提供一种抛光组合物，用于研磨包括导体层和与导体层接触的导电材料层的物体。在静电计的正极和负极分别在常温下与导电材料层和导体层分别连接在抛光组合物中的状态下，从正极流向负极的电流具有当导电材料层和导体层被抛光时为正值或为零。抛光组合物优选含有含氮原子的化合物，含硫原子的化合物或含磷原子的化合物作为添加剂，以将电流值控制为正或零。

70. 发明授权

US08827771B2 Polishing composition and polishing method using the same 有权
标题翻译：抛光组合物和抛光方法使用相同
公开(公告)号：US08827771B2
公开(公告)日：2014-09-09
申请号：US12999475
申请日：2009-06-15
申请人： Taira Otsu , Keigo Ohashi
发明人： Taira Otsu , Keigo Ohashi
IPC分类号： B24B7/22
CPC分类号： G11B5/8404 , B24B37/044 , C03C19/00 , C09G1/02 , C09K3/1463
摘要： There is provided a polishing composition, containing abrasive grains and an acid represented either by R2—R1—SO3H (wherein R1 is a linear alkylene or hydroxyalkylene group having 1 to 4 carbon atoms, and R2 is a hydroxy group, a carboxy group, or a sulfonic acid group when R1 is the linear alkylene group, or R2 is a carboxy group or a hydroxymethyl group when R1 is the linear hydroxyalkylene group), or by C6H5—R3 (wherein R3 is a sulfonic acid group or a phosphonic acid group). The acid contained in the polishing composition is preferably isethionic acid or benzenesulfonic acid. The polishing composition is mainly used in the application of polishing silicon oxide materials including glass substrates for hard disks, synthetic quartz substrates for photomasks, and low-dielectric-constant films such as silicon dioxide films, BPSG films, PSG films, FSG films, and organosiloxane films of semiconductor devices.
摘要翻译：提供一种抛光组合物，其含有磨粒和由R2-R1-SO3H表示的酸（其中R1是具有1-4个碳原子的直链亚烷基或羟基亚烷基，R2是羟基，羧基或当R 1为直链亚烷基时为磺酸基，或当R 1为直链羟基亚烷基时，R 2为羧基或羟甲基）或C 6 H 5 -R 3（其中R 3为磺酸基或膦酸基）。抛光组合物中所含的酸优选为羟乙磺酸或苯磺酸。抛光组合物主要用于抛光氧化硅材料的应用，包括用于硬盘的玻璃基板，用于光掩模的合成石英基板和诸如二氧化硅膜，BPSG膜，PSG膜，FSG膜和低介电常数膜的低介电常数膜。半导体器件的有机硅氧烷膜。

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