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1. 发明申请

US20090081927A1 POLISHING COMPOSITION AND METHOD UTILIZING ABRASIVE PARTICLES TREATED WITH AN AMINOSILANE 有权
标题翻译：抛光组合物和利用氨基硅烷处理的磨料颗粒的方法
公开(公告)号：US20090081927A1
公开(公告)日：2009-03-26
申请号：US12234237
申请日：2008-09-19
申请人： Steven Grumbine , Shoutian Li , William Ward , Pankaj Singh , Jeffrey Dysard
发明人： Steven Grumbine , Shoutian Li , William Ward , Pankaj Singh , Jeffrey Dysard
IPC分类号： B24B1/00 , C09K13/00
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1436 , C09K3/1463 , H01L21/31053
摘要： The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.
摘要翻译：本发明的方法包括用本发明的抛光组合物对基材进行化学机械抛光，所述抛光组合物包含液体载体和已经用化合物处理的磨料颗粒。

2. 发明授权

US09028572B2 Polishing composition and method utilizing abrasive particles treated with an aminosilane 有权
标题翻译：使用用氨基硅烷处理的磨料颗粒的抛光组合物和方法
公开(公告)号：US09028572B2
公开(公告)日：2015-05-12
申请号：US12234237
申请日：2008-09-19
申请人： Steven Grumbine , Shoutian Li , William Ward , Pankaj Singh , Jeffrey Dysard
发明人： Steven Grumbine , Shoutian Li , William Ward , Pankaj Singh , Jeffrey Dysard
IPC分类号： C09K3/14 , B24B37/04 , C09G1/02 , H01L21/3105
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1436 , C09K3/1463 , H01L21/31053
摘要： The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.
摘要翻译：本发明的方法包括用本发明的抛光组合物对基材进行化学机械抛光，所述抛光组合物包含液体载体和已经用化合物处理的磨料颗粒。

3. 发明授权

US08252687B2 Barrier slurry for low-k dielectrics 有权
标题翻译：用于低k电介质的阻隔浆料
公开(公告)号：US08252687B2
公开(公告)日：2012-08-28
申请号：US12584343
申请日：2009-09-03
申请人： Shoutian Li , Steven Grumbine , Jeffrey Dysard , Pankaj Singh
发明人： Shoutian Li , Steven Grumbine , Jeffrey Dysard , Pankaj Singh
IPC分类号： H01L21/302
CPC分类号： C09K3/1463 , C09K13/00 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises silica, a compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imidazolium salt, a carboxylic acid having seven or more carbon atoms, an oxidizing agent that oxidizes a metal, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
摘要翻译：本发明提供了一种用于抛光基材的化学机械抛光组合物。抛光组合物包括二氧化硅，选自胺取代的硅烷，四烷基铵盐，四烷基鏻盐和咪唑鎓盐的化合物，具有七个或更多个碳原子的羧酸，氧化金属的氧化剂，和水。本发明还提供了用上述抛光组合物对衬底进行化学机械抛光的方法。

4. 发明申请

US20100075502A1 Barrier slurry for low-k dielectrics 有权
标题翻译：用于低k电介质的阻隔浆料
公开(公告)号：US20100075502A1
公开(公告)日：2010-03-25
申请号：US12584343
申请日：2009-09-03
申请人： Shoutian Li , Steven Grumbine , Jeffrey Dysard , Pankaj Singh
发明人： Shoutian Li , Steven Grumbine , Jeffrey Dysard , Pankaj Singh
IPC分类号： H01L21/304 , C09K13/00
CPC分类号： C09K3/1463 , C09K13/00 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises silica, a compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imidazolium salt, a carboxylic acid having seven or more carbon atoms, an oxidizing agent that oxidizes a metal, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
摘要翻译：本发明提供了一种用于抛光基材的化学机械抛光组合物。抛光组合物包括二氧化硅，选自胺取代的硅烷，四烷基铵盐，四烷基鏻盐和咪唑鎓盐的化合物，具有七个或更多个碳原子的羧酸，氧化金属的氧化剂，和水。本发明还提供了用上述抛光组合物对衬底进行化学机械抛光的方法。

5. 发明授权

US07994057B2 Polishing composition and method utilizing abrasive particles treated with an aminosilane 有权
标题翻译：使用用氨基硅烷处理的磨料颗粒的抛光组合物和方法
公开(公告)号：US07994057B2
公开(公告)日：2011-08-09
申请号：US12234173
申请日：2008-09-19
申请人： Jeffrey Dysard , Sriram Anjur , Steven Grumbine , Daniela White , William Ward
发明人： Jeffrey Dysard , Sriram Anjur , Steven Grumbine , Daniela White , William Ward
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1436 , H01L21/31053
摘要： The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound.
摘要翻译：本发明的方法包括用本发明的抛光组合物对基材进行化学机械抛光，所述抛光组合物包括已经用氨基硅烷化合物处理的液体载体，阳离子聚合物，酸和磨料颗粒。

6. 发明申请

US20090081871A1 POLISHING COMPOSITION AND METHOD UTILIZING ABRASIVE PARTICLES TREATED WITH AN AMINOSILANE 有权
标题翻译：抛光组合物和利用氨基硅烷处理的磨料颗粒的方法
公开(公告)号：US20090081871A1
公开(公告)日：2009-03-26
申请号：US12234173
申请日：2008-09-19
申请人： Jeffrey Dysard , Sriram Anjur , Steven Grumbine , Daniela White , William Ward
发明人： Jeffrey Dysard , Sriram Anjur , Steven Grumbine , Daniela White , William Ward
IPC分类号： H01L21/304 , C09K3/14
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1436 , H01L21/31053
摘要： The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound.
摘要翻译：本发明的方法包括用本发明的抛光组合物对基材进行化学机械抛光，所述抛光组合物包括已经用氨基硅烷化合物处理的液体载体，阳离子聚合物，酸和磨料颗粒。

7. 发明申请

US20060166809A1 Methods for preparing catalysts 有权
公开(公告)号：US20060166809A1
公开(公告)日：2006-07-27
申请号：US10534072
申请日：2003-11-18
申请人： Andrzej Malek , James Vartuli , Stuart Soled , Sabato Miseo , Jennifer Feeley , Gary Casty , Gabor Kiss , Jeffrey Dysard , Joseph Baumgartner , Christine Kliewer , Steven Ragomo
发明人： Andrzej Malek , James Vartuli , Stuart Soled , Sabato Miseo , Jennifer Feeley , Gary Casty , Gabor Kiss , Jeffrey Dysard , Joseph Baumgartner , Christine Kliewer , Steven Ragomo
IPC分类号： B01J38/00 , B01J21/08 , B01J20/10 , B01J20/00 , B01J27/28 , B01J21/12
CPC分类号： C10G2/331 , B01J20/02 , B01J20/08 , B01J20/103 , B01J20/223 , B01J20/3204 , B01J20/3236 , B01J23/462 , B01J23/75 , B01J23/8896 , B01J37/0203 , B01J37/08 , B01J37/082 , C07C7/12 , C10G25/003 , C10G29/04
摘要： The present invention is directed to processes for preparing supported metal catalysts comprising one or more catalytically active metals applied to a porous catalyst support and to processes that use such catalysts. The process requires the formation of an organic complex during the manufacture of the catalyst which after its formation is either partially or fully decomposed before reduction if the metal to form the catalyst. The catalysts have high levels of metal dispersion and uniform distribution of catalytically active metals on the support. The catalysts obtained form the processes are particularly effective in catalysing Fischer-Tropsch reactions and as adsorbants for the removal or organosulfur compounds from hydrocarbons.

8. 发明授权

US07897061B2 Compositions and methods for CMP of phase change alloys 有权
标题翻译：相变合金CMP的组成和方法
公开(公告)号：US07897061B2
公开(公告)日：2011-03-01
申请号：US11699129
申请日：2007-01-29
申请人： Jeffrey Dysard , Paul Feeney , Sriram Anjur
发明人： Jeffrey Dysard , Paul Feeney , Sriram Anjur
IPC分类号： C09K13/00
CPC分类号： C23F3/06 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L45/06 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by weight of a particulate abrasive material in combination with an optional oxidizing agent, at least one chelating agent, and an aqueous carrier therefor. The chelating agent comprises a compound or combination of compounds capable of chelating a phase change alloy or component thereof (e.g., germanium, indium, antimony and/or tellurium species) that is present in the substrate, or chelating a substance that is formed from the PCA during polishing of the substrate with the CMP composition. A CMP method for polishing a phase change alloy-containing substrate utilizing the composition is also disclosed.
摘要翻译：本发明提供适用于抛光包含相变合金（PCA）如锗 - 锑 - 碲（GST）合金的基材的化学机械抛光（CMP）组合物。组合物包含不超过约6重量％的颗粒磨料与任选的氧化剂，至少一种螯合剂及其水性载体的组合。螯合剂包括能够螯合存在于底物中的相变合金或其组分（例如，锗，铟，锑和/或碲物质）的化合物或化合物的组合，或螯合由该底物形成的物质 PCA在用CMP组合物抛光衬底的过程中。还公开了利用该组合物研磨含相变合金的基材的CMP方法。

9. 发明申请

US20070077865A1 Method for controlling polysilicon removal 审中-公开
标题翻译：控制多晶硅去除的方法
公开(公告)号：US20070077865A1
公开(公告)日：2007-04-05
申请号：US11243140
申请日：2005-10-04
申请人： Jeffrey Dysard , Timothy Johns , Paul Feeney
发明人： Jeffrey Dysard , Timothy Johns , Paul Feeney
IPC分类号： B24B7/30 , B24B1/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： The invention is directed to a method of chemically-mechanically polishing a substrate comprising polysilicon and a material selected from silicon oxide and silicon nitride with a chemical-mechanical polishing system comprising an abrasive, a polyethylene oxide/polypropylene oxide copolymer, water, and a polishing pad.
摘要翻译：本发明涉及一种化学机械抛光包括多晶硅和选自氧化硅和氮化硅的材料的衬底的方法，该化学机械抛光系统包括研磨剂，聚环氧乙烷/聚丙烯氧化物共聚物，水和抛光垫。

10. 发明申请

US20050252831A1 Process for removing sulfur from naphtha 有权
标题翻译：从石脑油中除去硫的方法
公开(公告)号：US20050252831A1
公开(公告)日：2005-11-17
申请号：US11100309
申请日：2005-04-06
申请人： Jeffrey Dysard , Gordon Stuntz , Thomas Halbert , Andrzej Malek
发明人： Jeffrey Dysard , Gordon Stuntz , Thomas Halbert , Andrzej Malek
IPC分类号： B01J23/00 , C10G45/08 , C10G67/02 , C10G67/04 , C10G67/06 , C10G67/12 , C10G67/14
CPC分类号： C10G67/12 , C10G45/08 , C10G67/04 , C10G67/0418 , C10G67/06 , C10G67/14 , C10G2400/02
摘要： A three-step process of removing sulfur from naphtha feeds. The steps include a first hydrotreating step, a mercaptan removal agent and an adsorbent containing a reactive metal on an inorganic support. Step one removes at least 95 wt. % of the sulfur compounds while preserving at least 50 wt. % of the olefins. Treatment with the mercaptan removal agent lowers the sulfur content to 30 wppm total sulfur and final naphtha product contains leas than 10 wppm total sulfur.
摘要翻译：从石脑油进料中除去硫的三个步骤。所述步骤包括第一加氢处理步骤，硫醇去除剂和在无机载体上含有活性金属的吸附剂。第一步除去至少95wt。％的硫化合物，同时保留至少50wt。％的烯烃。用硫醇去除剂处理将硫含量降低到总硫含量为30wppm，最终石脑油产品含有超过10wppm的总硫。

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