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61. 发明申请

US20050224748A1 Process of removing residue from a precision surface using liquid or supercritical critical carbon dioxide composition 有权
标题翻译：使用液体或超临界关键二氧化碳组合物从精密表面除去残留物的方法
公开(公告)号：US20050224748A1
公开(公告)日：2005-10-13
申请号：US10966301
申请日：2004-10-15
申请人： John Cotte , Dario Goldfarb , Pamela Jones , Kenneth McCullough , Wayne Moreau , Keith Pope , John Simons , Charles Taft
发明人： John Cotte , Dario Goldfarb , Pamela Jones , Kenneth McCullough , Wayne Moreau , Keith Pope , John Simons , Charles Taft
IPC分类号： B08B7/00 , C11D7/08 , C11D7/26 , C11D7/28 , C11D7/50 , C11D11/00 , H01L21/02 , H01L21/311 , H01L21/3213 , C23G1/00
CPC分类号： H01L21/02071 , B08B7/0021 , C11D7/08 , C11D7/265 , C11D7/28 , C11D7/50 , C11D11/0047 , H01L21/31116
摘要： A composition which includes liquid or supercritical carbon dioxide and an acid having a pKa of less than about 4. The composition is employed in a process of removing residue from a precision surface, such as a semiconductor sample, in which the precision surface is contacted with the composition under thermodynamic conditions consistent with the retention of the liquid or supercritical carbon dioxide in the liquid or supercritical state.
摘要翻译：包括液体或超临界二氧化碳和pKa小于约4的酸的组合物。该组合物用于从精密表面与精密表面接触的精密表面（例如半导体样品）中除去残余物的方法在热力学条件下的组成与液体或超临界二氧化碳在液体或超临界状态下的保留一致。

62. 发明授权

US06953654B2 Process and apparatus for removing a contaminant from a substrate 失效
标题翻译：用于从基底去除污染物的方法和装置
公开(公告)号：US06953654B2
公开(公告)日：2005-10-11
申请号：US10063049
申请日：2002-03-14
申请人： Nicholas A. Ryza , Allan W. Awtrey
发明人： Nicholas A. Ryza , Allan W. Awtrey
IPC分类号： B08B7/00 , C23G5/00 , G02B27/00 , G03F7/40 , H01L21/00 , H01L21/306 , G03F7/42
CPC分类号： G02B27/0006 , B08B7/0021 , C23G5/00 , G03F7/40 , G03F7/405 , H01L21/02063 , H01L21/67069
摘要： Contaminant removal from a substrate can be performed using a supercritical fluid. An apparatus can be configured to operate at conditions that take advantage of higher solubility of a contaminant in its supercritical state compared to its liquid state. The substrate can be exposed to a supercritical fluid in a chamber to remove at least some of the contaminant. Outside the chamber, the supercritical fluid can be cooled to its corresponding liquid state, in which lower solubility of the contaminant may allow the contaminant to separate into a different phase from the liquid phase of the supercritical fluid. Such contaminant removal can be highly advantageous to substrates that withstand only limited amounts of physical or mechanical stress or heat. The contaminant removal can also be used where geometries virtually prevent removal by physical or mechanical means.
摘要翻译：可以使用超临界流体从基底去除污染物。可以将装置配置成在与其液体状态相比利用污染物处于其超临界状态的较高溶解度的条件下操作。衬底可以暴露于室中的超临界流体以去除至少一些污染物。在室外，超临界流体可以冷却到其相应的液体状态，其中污染物的较低溶解度可允许污染物从超临界流体的液相分离成不同的相。这种污染物去除对于仅承受有限量的物理或机械应力或热量的基底是非常有利的。污染物去除也可以用于几何形状几乎防止通过物理或机械手段去除的地方。

63. 发明授权

US06945262B2 Analysis equipment for determining physical properties of an organic solution 失效
标题翻译：用于确定有机溶液物理性能的分析设备
公开(公告)号：US06945262B2
公开(公告)日：2005-09-20
申请号：US10050660
申请日：2002-01-16
申请人： Howard J. Farr , Keith H. Betscher , Richard R. Worthing, Jr. , D Sangeeta , Himanshu B. Vakil , Curtis A. Johnson , Thomas J. Cartier, Jr. , Edward B. Stokes , Heinz Jaster , Alexander S. Allen
发明人： Howard J. Farr , Keith H. Betscher , Richard R. Worthing, Jr. , D Sangeeta , Himanshu B. Vakil , Curtis A. Johnson , Thomas J. Cartier, Jr. , Edward B. Stokes , Heinz Jaster , Alexander S. Allen
IPC分类号： B08B3/08 , B08B3/10 , B08B7/00 , C23G1/14 , C23G1/36 , C23G3/00 , C23G5/02 , C23G5/04
CPC分类号： B08B7/0021 , C23G3/00 , C23G5/02 , C23G5/04 , F01D5/005 , F01D5/288
摘要： Analysis equipment for determining a concentration of an organic component and a caustic component of a reusable organic caustic solution that has been utilized for removing a ceramic coating from a metallic component at elevated temperatures and pressures, such as in an autoclave. Sensors are positioned between a filter for removing particles of the ceramic coating dispersed in the reusable organic caustic solution from the reusable organic caustic solution and a storage tank storing the reusable organic caustic solution after removal from the autoclave. The sensors measure physical properties of the reusable organic caustic solution after removal of the particles from the reusable organic caustic solution, such as electrical conductivity, opacity, refractive index, density, fluidity and the speed of sound in the solution.
摘要翻译：用于确定已被用于在高温和高压下如高压釜中从金属组分除去陶瓷涂层的可重复使用的有机苛性碱溶液的有机组分和苛性碱组分的浓度的分析设备。传感器位于用于从可再利用的有机苛性碱溶液中分散在可重复使用的有机苛性碱溶液中的陶瓷涂层的颗粒的过滤器和从高压釜中取出之后储存可重复使用的有机苛性碱溶液的储存器。这些传感器在从可重复使用的有机苛性碱溶液中除去颗粒后，测量可重复使用的有机苛性碱溶液的物理性质，如电导率，不透明度，折射率，密度，流动性和溶液中的声速。

64. 发明授权

US06943139B2 Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations 失效
标题翻译：使用超临界二氧化碳/化学配方去除图案化硅/二氧化硅上的颗粒污染物
公开(公告)号：US06943139B2
公开(公告)日：2005-09-13
申请号：US10284861
申请日：2002-10-31
申请人： Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum
发明人： Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum
IPC分类号： B08B7/00 , C11D7/02 , C11D7/10 , C11D7/32 , C11D7/50 , H01L21/306 , H01L21/311 , B08B3/00
CPC分类号： C11D11/0047 , B08B7/0021 , C11D7/02 , C11D7/10 , C11D7/3209 , C11D7/3281 , C11D7/5022 , H01L21/02063 , H01L21/31116
摘要： A cleaning composition for cleaning particulate contamination from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source and, optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in particulate contamination on wafer substrates and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.
摘要翻译：一种用于从半导体衬底上的小尺寸清洁颗粒污染的清洁组合物。清洁组合物含有超临界CO 2（SCCO 2），醇，氟化物源和任选的羟基添加剂。这种清洁组合物克服了SCCO2作为清洁剂的固有缺陷，即SCCO2的非极性特征及其与溶解诸如无机盐和极性有机化合物的物质无关，这些物质存在于晶片衬底上的颗粒污染物中，并且必须从半导体衬底去除以进行有效的清洁。清洁组合物能够对Si / SiO 2基体上具有颗粒污染物的基材进行无损伤，无残留的清洗。

65. 发明申请

US20050192193A1 Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions 失效
标题翻译：使用超临界流体组合物增强含硅颗粒物质的去除
公开(公告)号：US20050192193A1
公开(公告)日：2005-09-01
申请号：US10790535
申请日：2004-03-01
申请人： Michael Korzenski , Thomas Baum
发明人： Michael Korzenski , Thomas Baum
IPC分类号： B08B3/12 , B08B7/00
CPC分类号： C11D11/0047 , B08B7/0021 , C11D3/02 , C11D3/042 , C11D3/046 , C11D3/3749 , C11D3/43 , C11D7/02 , C11D7/08 , C11D7/10 , C11D7/5004
摘要： A method and composition for removing silicon-containing particulate material, such as silicon nitrides and silicon oxides, from patterned Si/SiO2 semiconductor wafer surfaces is described. The composition includes a supercritical fluid (SCF), an etchant species, a co-solvent, a surface passivator, a binder, deionized water, and optionally a surfactant. The SCF-based compositions substantially remove the contaminating particulate material from the wafer surface prior to subsequent processing, thus improving the morphology, performance, reliability and yield of the semiconductor device.
摘要翻译：描述了从图案化的Si / SiO 2半导体晶片表面去除含硅颗粒材料如硅氮化物和氧化硅的方法和组合物。组合物包括超临界流体（SCF），蚀刻剂物质，共溶剂，表面钝化剂，粘合剂，去离子水和任选的表面活性剂。基于SCF的组合物在随后的处理之前基本上从晶片表面除去污染的颗粒材料，从而改善半导体器件的形态，性能，可靠性和产量。

66. 发明申请

US20050191861A1 Using supercritical fluids and/or dense fluids in semiconductor applications 审中-公开
标题翻译：在半导体应用中使用超临界流体和/或致密流体
公开(公告)号：US20050191861A1
公开(公告)日：2005-09-01
申请号：US11038456
申请日：2005-01-18
申请人： Steven Verhaverbeke
发明人： Steven Verhaverbeke
IPC分类号： B08B3/12 , B08B6/00 , B08B7/00 , C23F1/00 , H01L21/02 , H01L21/302 , H01L21/306 , H01L21/311
CPC分类号： H01L21/02093 , B08B3/12 , B08B7/0021 , H01L21/02063 , H01L21/02101 , H01L21/31133
摘要： Embodiments of the present invention generally relate to methods and apparatuses using supercritical fluids and/or dense fluids in semiconductor applications. In one embodiment, a substrate structure is dried by applying a supercritical fluid, a dense fluid, or combinations thereof. In another embodiment, a substrate structure is cleaned by applying a supercritical fluid, a dense fluid, or combinations thereof. In still another embodiment, a low-k material layer is repaired by applying a supercritical fluid, a dense fluid, or combinations thereof. In yet another embodiment, a photoresist layer is stripped by applying a supercritical fluid, a dense fluid, or combinations thereof. In another embodiment, a porous low-k material layer is deposited by applying a supercritical fluid, a dense fluid, or combinations thereof.
摘要翻译：本发明的实施例一般涉及在半导体应用中使用超临界流体和/或致密流体的方法和装置。在一个实施方案中，通过施加超临界流体，致密流体或其组合来干燥基底结构。在另一个实施方案中，通过施加超临界流体，致密流体或其组合来清洁基底结构。在又一实施例中，通过施加超临界流体，致密流体或其组合来修复低k材料层。在另一个实施例中，通过施加超临界流体，致密流体或其组合来剥离光致抗蚀剂层。在另一个实施方案中，通过施加超临界流体，致密流体或其组合来沉积多孔低k材料层。

67. 发明申请

US20050145263A1 Substrate processing apparatus for processing substrates using dense phase gas and sonic waves 失效
公开(公告)号：US20050145263A1
公开(公告)日：2005-07-07
申请号：US11073060
申请日：2005-03-04
申请人： Gil Ching , Vincent Perrut , Vincent Ruch , Gilles Fresquet
发明人： Gil Ching , Vincent Perrut , Vincent Ruch , Gilles Fresquet
IPC分类号： B01D21/00 , B08B3/12 , B08B6/00 , B08B7/00 , C25F1/00 , H01L21/00 , H01L21/02
CPC分类号： B08B7/0021 , B08B3/12 , H01L21/67051 , H01L21/6708 , Y10S134/902
摘要： Embodiments of the invention are directed to substrate processing apparatuses and methods for processing substrates. In one embodiment, a substrate processing apparatus includes a processing chamber, a substrate holder inside of the processing chamber for holding a substrate, and a sonic box in the processing chamber for supplying sonic waves substantially perpendicularly to the substrate. The sonic box may comprises a membrane, and a transducer coupled to the membrane.

68. 发明申请

US20050124516A1 Composition and method for removing photoresist materials from electronic components 失效
公开(公告)号：US20050124516A1
公开(公告)日：2005-06-09
申请号：US11034519
申请日：2005-01-11
申请人： Leisa Davenhall , James Rubin , Craig Taylor
发明人： Leisa Davenhall , James Rubin , Craig Taylor
IPC分类号： B08B3/10 , B08B7/00 , C11D7/24 , C11D7/26 , C11D7/28 , C11D7/34 , C11D7/50 , C11D11/00 , G03F7/42 , H01L21/311 , C11D1/00
CPC分类号： B08B7/00 , B08B3/102 , B08B7/0021 , C11D7/24 , C11D7/266 , C11D7/267 , C11D7/28 , C11D7/34 , C11D7/50 , C11D7/5004 , C11D11/0047 , G03F7/422 , H01L21/31133
摘要： Composition and method for removing photoresist materials from electronic components. The composition is a mixture of at least one dense phase fluid and at least one dense phase fluid modifier. The method includes exposing a substrate to at least one pulse of the composition in a supercritical state to remove photoresist materials from the substrate.

69. 发明申请

US20050118832A1 Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations 审中-公开
标题翻译：使用超临界流体/化学配方去除MEMS牺牲层
公开(公告)号：US20050118832A1
公开(公告)日：2005-06-02
申请号：US10724791
申请日：2003-12-01
申请人： Michael Korzenski , Thomas Baum , Eliodor Ghenciu
发明人： Michael Korzenski , Thomas Baum , Eliodor Ghenciu
IPC分类号： B08B7/00 , B81B3/00 , H01L21/306 , H01L21/302 , H01L21/461
CPC分类号： B81C1/00936 , B08B7/0021 , B81C2201/0108 , B81C2201/117 , H01L21/02063
摘要： A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid, an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched MEMS substrates experience lower incidents of stiction relative to MEMS substrates etched using conventional wet etching techniques.
摘要翻译：描述了从具有这种牺牲层的微机电系统（MEMS）衬底去除含硅牺牲层的方法和组合物。蚀刻组合物包括超临界流体，蚀刻剂物质，共溶剂和任选的表面活性剂。这样的蚀刻组合物克服了作为清洗剂的SCF的固有缺陷，即SCF的非极性特征以及它们不溶于必须从半导体衬底去除的极性物质。所得蚀刻的MEMS衬底相对于使用常规湿蚀刻技术蚀刻的MEMS衬底的静态故障事件。

70. 发明授权

US06892741B2 Apparatus and process for supercritical carbon dioxide phase processing 失效
公开(公告)号：US06892741B2
公开(公告)日：2005-05-17
申请号：US10761496
申请日：2004-01-21
申请人： Jesse Stephen Jur , Kenneth J. McCullough , Wayne Martin Moreau , John Patrick Simons , Charles Jesse Taft
发明人： Jesse Stephen Jur , Kenneth J. McCullough , Wayne Martin Moreau , John Patrick Simons , Charles Jesse Taft
IPC分类号： B08B7/00 , B08B3/02
CPC分类号： B08B7/0021 , Y10S134/902
摘要： The present invention provides an apparatus for cleaning a workpiece with a cleaning medium that is maintained at a single fluid phase. The apparatus comprises means for providing the cleaning medium; a pressurizable cleaning vessel for receiving the cleaning medium and the workpiece; and means for maintaining a single fluid phase of the cleaning medium in the cleaning vessel. The present invention further provides a process for cleaning the workpiece with cleaning medium under conditions such that the workpiece is exposed to a single fluid phase of the cleaning medium. The present invention further includes a process for a storage media that includes instructions for controlling a processor for the process of the present invention. The storage media comprises means for controlling the processor to control contacting conditions of the workpiece and the cleaning medium such that the workpiece is exposed to a single fluid phase of the cleaning medium.

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