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    • 61. 发明授权
    • Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis
    • 用于测量衬底特性或制备用于分析的衬底的方法和系统
    • US07365321B2
    • 2008-04-29
    • US11086048
    • 2005-03-22
    • Mehran Nasser-GhodsiMark Borowicz
    • Mehran Nasser-GhodsiMark Borowicz
    • H01J37/06
    • H01J37/317G01N1/32H01J37/244H01J37/3005H01J2237/2814H01J2237/3174H01J2237/31745
    • Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.
    • 提供了用于测量基板的特性或准备用于分析的基板的方法和系统。 用于测量衬底的特性的一种方法包括使用电子束去除衬底上的特征的一部分以暴露特征的剩余部分的横截面轮廓。 该特征可以是光致抗蚀剂特征。 该方法还包括测量横截面轮廓的特性。 制备用于分析的基板的方法包括使用化学蚀刻与电子束结合来去除靠近缺陷的衬底上的材料的一部分。 缺陷可能是地下缺陷或部分地下缺陷。 制备用于分析的衬底的另一种方法包括使用化学蚀刻与电子束和光束组合地去除邻近缺陷的衬底上的材料的一部分。
    • 62. 发明授权
    • Methods and systems for optical and non-optical measurements of a substrate
    • 用于基板的光学和非光学测量的方法和系统
    • US07355709B1
    • 2008-04-08
    • US11063228
    • 2005-02-22
    • Christopher F. BevisGary Dickerson
    • Christopher F. BevisGary Dickerson
    • G01B11/00
    • G01B11/24G01N21/956H01J2237/2482H01J2237/2817H01J2237/2826
    • Methods and systems for measurements of a substrate are provided. One system includes a non-optical subsystem configured to perform first measurements on a substrate. The system also includes an optical subsystem coupled to the non-optical subsystem. The optical subsystem is configured to perform second measurements on the substrate. In addition, the system includes a processor coupled to the subsystems. The processor is configured to calibrate one of the subsystems using the measurements performed by the other subsystem. One method includes performing first measurements on a substrate using a non-optical subsystem and performing second measurements on the substrate using an optical subsystem that is coupled to the non-optical subsystem. The method also includes calibrating one of the subsystems using the measurements performed by the other subsystem.
    • 提供了用于测量基底的方法和系统。 一个系统包括被配置为在衬底上执行第一测量的非光学子系统。 该系统还包括耦合到非光学子系统的光学子系统。 光学子系统被配置为在衬底上执行第二测量。 此外,该系统包括耦合到子系统的处理器。 处理器被配置为使用由另一子系统执行的测量来校准其中一个子系统。 一种方法包括使用非光学子系统在衬底上执行第一测量,并使用耦合到非光学子系统的光学子系统在衬底上执行第二测量。 该方法还包括使用由另一子系统执行的测量来校准子系统之一。
    • 64. 发明授权
    • Systems configured to provide illumination of a specimen during inspection
    • 被配置为在检查期间提供样品的照明的系统
    • US07199946B2
    • 2007-04-03
    • US11145829
    • 2005-06-06
    • Hwan J. Jeong
    • Hwan J. Jeong
    • G02B17/00G01N21/00
    • G02B17/0804G01N21/8806G01N21/9501G01N2201/0636G02B17/0852
    • Systems configured to provide illumination of a specimen during inspection are provided. One system includes catoptric elements configured to direct light from a light source to a line across the specimen at an oblique angle of incidence. The catoptric elements include positive and negative elements configured such that pupil distortions of the positive and negative elements are substantially canceled. Another system includes a dioptric element and a catoptric element. The dioptric element and the catoptric element are configured to direct light from a light source to a line across the specimen at an oblique angle of incidence. The dioptric and catoptric elements are also configured such that pupil distortions of the dioptric and catoptric elements are substantially canceled.
    • 提供被配置为在检查期间提供样品的照明的系统。 一个系统包括反射元件,其被配置为将光从光源引导到以倾斜入射角穿过样本的线。 反射元件包括正和负元件,其被配置为使得正和负元件的光瞳畸变被基本上消除。 另一个系统包括一个折射元件和一个折射元件。 折射元件和反射元件被构造成将来自光源的光以倾斜的入射角引导到跨越样本的线。 折射和折射元件也被配置为使得屈光度和折射元件的瞳孔变形基本上被消除。
    • 70. 发明授权
    • Methods for improved monitor and control of lithography processes
    • 改进光刻工艺监测和控制的方法
    • US09188974B1
    • 2015-11-17
    • US13184565
    • 2011-07-17
    • Chris MackMoshe E Preil
    • Chris MackMoshe E Preil
    • G06F19/00G05B19/418G06Q10/06
    • G03F7/70616G03F7/70525G03F7/70591G05B19/41875
    • Various computer-implemented methods are provided. One method includes determining errors across a field of a lens of a lithography system based on wafer measurements. In addition, the method includes separating the errors into correctable and non-correctable errors across the field. The errors may include dose errors, focus errors, or dose and focus errors. In another embodiment, the method may include determining correction terms for parameter(s) of the lithography system, which if applied to the parameter(s), the correctable errors would be eliminated resulting in approximately optimal imaging performance of the lithography system. Another method includes controlling one or more parameters of features within substantially an entire printed area on a product wafer using a limited number of wafer measurements performed on a test wafer. The wafer measurements may be performed on a first feature type, and the features that are controlled may include a second, different feature type.
    • 提供了各种计算机实现的方法。 一种方法包括基于晶片测量确定光刻系统的透镜的场的误差。 此外,该方法包括将错误分成整个现场的可纠正和不可校正的错误。 误差可能包括剂量误差,焦点误差,或剂量和焦点误差。 在另一个实施例中,该方法可以包括确定光刻系统的参数的校正项,如果应用于参数,则将消除可校正的误差,从而导致光刻系统的近似最佳成像性能。 另一种方法包括使用在测试晶片上执行的有限数量的晶片测量来在产品晶片上的基本整个印刷区域内控制特征的一个或多个参数。 可以在第一特征类型上执行晶片测量,并且被控制的特征可以包括第二不同的特征类型。