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61. 发明授权

US08551791B2 Apparatus and method for manufacturing semiconductor devices through layer material dimension analysis 有权
公开(公告)号：US08551791B2
公开(公告)日：2013-10-08
申请号：US12457873
申请日：2009-06-24
申请人： Jang-Ik Park , Chung-Sam Jun , Hwan-Shik Park , Ji-Hye Kim , Kwan-Woo Ryu , Kong-Jung Sa , So-Yeon Yun
发明人： Jang-Ik Park , Chung-Sam Jun , Hwan-Shik Park , Ji-Hye Kim , Kwan-Woo Ryu , Kong-Jung Sa , So-Yeon Yun
IPC分类号： H01L21/00 , G06K9/00 , G01N21/00
CPC分类号： G01N21/3563 , G01J3/447 , G01J4/00 , G01N21/9501 , H01L22/12
摘要： Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.

62. 发明授权

US07280233B2 Method and apparatus for inspecting an edge exposure area of a wafer 失效
标题翻译：用于检查晶片的边缘曝光区域的方法和装置
公开(公告)号：US07280233B2
公开(公告)日：2007-10-09
申请号：US10787765
申请日：2004-02-27
申请人： Koung-Su Shin , Sun-Yong Choi , Chung-Sam Jun , Dong-Chun Lee , Kwang-Jun Yoon
发明人： Koung-Su Shin , Sun-Yong Choi , Chung-Sam Jun , Dong-Chun Lee , Kwang-Jun Yoon
IPC分类号： G01B11/02 , G01B11/14 , G01B11/28 , G01N21/00
CPC分类号： G01N21/9503 , G01N21/9501 , G01N21/9505
摘要： For an automatic defect inspection of an edge exposure area of a wafer, an optical unit supplies a light beam onto the edge portion of a wafer and a detection unit detects light reflected from the edge portion. The detection unit converts the detected light into an electrical signal to transmit the electrical signal to a processing unit. The processing unit analyzes the electrical signal to measure the reflectivity of the edge portion, compares the measured reflectivity with a reference reflectivity, and calculates the width of the edge exposure area. The processing unit compares the calculated width with a reference width to detect any defect in the edge exposure area.
摘要翻译：为了对晶片的边缘曝光区域进行自动缺陷检查，光学单元将光束提供到晶片的边缘部分，并且检测单元检测从边缘部分反射的光。检测单元将检测到的光转换为电信号，以将电信号传送到处理单元。处理单元分析电信号以测量边缘部分的反射率，将测量的反射率与参考反射率进行比较，并计算边缘曝光区域的宽度。处理单元将计算的宽度与参考宽度进行比较，以检测边缘曝光区域中的任何缺陷。

63. 发明申请

US20070190904A1 Wafer holder and wafer conveyor equipped with the same 失效
标题翻译：晶圆架和晶圆输送机配备相同
公开(公告)号：US20070190904A1
公开(公告)日：2007-08-16
申请号：US11783534
申请日：2007-04-10
申请人： Tae-Kyoung Kim , Yun-Jung Jee , Kyoung-Su Shin , Chung-Sam Jun
发明人： Tae-Kyoung Kim , Yun-Jung Jee , Kyoung-Su Shin , Chung-Sam Jun
IPC分类号： B24B51/00
CPC分类号： H01L21/68785 , H01L21/6776
摘要： The present invention is directed to a wafer holder and a related wafer conveyor system. The wafer holder holds a wafer and moves horizontally within a chamber. A contact area between the wafer and the wafer holder is reduced, and potential contaminants generated by ear between components of the wafer holder are trapped by an airtight cover. Since the wafer holder moves horizontally while being fixed to a guide rail, the wafer conveyor system reduces friction between the guide rail and the wafer holder.
摘要翻译：本发明涉及晶片保持器和相关的晶片输送系统。晶片保持器保持晶片并且在腔室内水平移动。晶片和晶片保持架之间的接触面积减小，并且由晶片保持器的部件之间的耳朵产生的潜在的污染物被气密的盖子所困住。由于晶片保持架在固定到导轨的同时水平移动，所以晶片传送系统减小了导轨和晶片保持器之间的摩擦。

64. 发明授权

US07220173B2 Wafer holder and wafer conveyor system equipped with the same 失效
标题翻译：晶圆架和晶圆输送系统配备相同
公开(公告)号：US07220173B2
公开(公告)日：2007-05-22
申请号：US11016247
申请日：2004-12-20
申请人： Tae-Kyoung Kim , Yun-Jung Jee , Kyoung-Su Shin , Chung-Sam Jun
发明人： Tae-Kyoung Kim , Yun-Jung Jee , Kyoung-Su Shin , Chung-Sam Jun
IPC分类号： B24B47/02
CPC分类号： H01L21/68785 , H01L21/6776
摘要： The present invention is directed to a wafer holder and a related wafer conveyor system. The wafer holder holds a wafer and moves horizontally within a chamber. A contact area between the wafer and the wafer holder is reduced, and potential contaminants generated by ear between components of the wafer holder are trapped by an airtight cover. Since the wafer holder moves horizontally while being fixed to a guide rail, the wafer conveyor system reduces friction between the guide rail and the wafer holder.
摘要翻译：本发明涉及晶片保持器和相关的晶片输送系统。晶片保持器保持晶片并且在腔室内水平移动。晶片和晶片固定器之间的接触面积减小，并且由晶片保持器的部件之间的耳朵产生的潜在的污染物被气密的盖子所困住。由于晶片保持架在固定到导轨的同时水平移动，所以晶片传送系统减小了导轨和晶片保持器之间的摩擦。

65. 发明授权

US07197426B2 Method and apparatus for measuring thickness of metal layer 失效
标题翻译：用于测量金属层厚度的方法和装置
公开(公告)号：US07197426B2
公开(公告)日：2007-03-27
申请号：US11191069
申请日：2005-07-28
申请人： Jang-Ik Park , Chung-Sam Jun , Hwan-Shik Park
发明人： Jang-Ik Park , Chung-Sam Jun , Hwan-Shik Park
IPC分类号： G01B11/28
CPC分类号： G01B11/0666
摘要： In a method and apparatus for measuring a thickness of a metal layer formed on a semiconductor substrate first, second, and third light pulses are successively irradiated onto a top surface of the metal layer to generate respective first, second, and third second sonic waves in the metal layer. Interference between the first and second sonic waves alters a detected reflectivity of the third light pulse off the metal layer. Maximum interference of the sonic waves occurs where the first sonic wave travels to a bottom surface of the metal layer and back to the top surface in the same time that it takes for the second light pulse to arrive at the surface of the metal layer. Accordingly, the velocity of the first sonic wave and a time lag between the first and second light pulses are used to determine the thickness of the metal layer.
摘要翻译：在用于测量形成在半导体衬底上的金属层的厚度的方法和装置中，第一，第二和第三光脉冲被连续照射在金属层的顶表面上，以产生相应的第一，第二和第三声波金属层。第一和第二声波之间的干扰改变了第三光脉冲从金属层的检测反射率。发生声波的最大干扰，其中第一声波在第二光脉冲到达金属层的表面所需的同一时间内移动到金属层的底表面并返回到顶表面。因此，使用第一声波的速度和第一和第二光脉冲之间的时间滞后来确定金属层的厚度。

66. 发明申请

US20070028771A1 Adsorption apparatus, semiconductor device manufacturing facility comprising the same, and method of recycling perfulorocompounds 审中-公开
标题翻译：吸附装置，包括该吸附装置的半导体装置制造设备以及循环使用方法
公开(公告)号：US20070028771A1
公开(公告)日：2007-02-08
申请号：US11498017
申请日：2006-08-03
申请人： Ji-Young Shin , Chung-Sam Jun , Kye-Weon Kim
发明人： Ji-Young Shin , Chung-Sam Jun , Kye-Weon Kim
IPC分类号： B01D53/02
CPC分类号： B01D53/70 , B01D53/04 , B01D53/0454 , B01D2253/102 , B01D2253/104 , B01D2253/106 , B01D2253/108 , B01D2256/26 , B01D2257/2066 , B01D2258/0216 , B01D2259/40083 , B01D2259/402 , Y02C20/30
摘要： PFC is recycled from a gas mixture using adsorption technology and techniques. Two adsorption units each include an adsorbent having a selectivity by which the PFC is selectively adsorbed with respect to the other gas(es) that make up the mixture. The gas mixture is selectively supplied to one of the first and second adsorption units and a condition is created in the first adsorption unit so that the PFC is adsorbed in the first adsorption unit. Once the adsorbent is saturated in the first adsorption unit, a condition is created in the first adsorption unit that causes the PFC to be desorbed. At this time, the gas mixture is selectively supplied to the second adsorption unit, and a condition is created in the second adsorption unit so that the PFC is adsorbed. Once the adsorbent is saturated in the second adsorption unit, a condition is created in the second adsorption unit that causes the PFC to be desorbed. High-purity PFC gas can be obtained from the exhaust gas even if the gas mixture is exhaust gas of a semiconductor device manufacturing process having a low concentration of PFC.
摘要翻译：使用吸附技术和技术，从气体混合物回收PFC。两个吸附单元各自包括具有选择性的吸附剂，通过该吸附剂相对于构成混合物的其它气体选择性地吸附PFC。气体混合物被选择性地供应到第一和第二吸附单元之一，并且在第一吸附单元中产生条件，使得PFC吸附在第一吸附单元中。一旦吸附剂在第一吸附单元中饱和，则在第一吸附单元中产生使PFC解吸的条件。此时，将气体混合物选择性地供给到第二吸附单元，并且在第二吸附单元中产生条件以使PFC被吸附。一旦吸附剂在第二吸附单元中饱和，则在引起PFC解吸的第二吸附单元中产生一个条件。即使气体混合物是具有低浓度PFC的半导体器件制造方法的废气，也可以从废气中获得高纯度PFC气体。

67. 发明申请

US20070013901A1 OPTICAL INSPECTION TOOL HAVING LENS UNIT WITH MULTIPLE BEAM PATHS FOR DETECTING SURFACE DEFECTS OF A SUBSTRATE AND METHODS OF USING SAME 有权
标题翻译：具有用于检测基板的表面缺陷的多个光束的透镜单元的光学检查工具及其使用方法
公开(公告)号：US20070013901A1
公开(公告)日：2007-01-18
申请号：US11423677
申请日：2006-06-12
申请人： Jong-An Kim , Dong-Chun Lee , Chung-Sam Jun , Ik-Chul Kim , Sang-Hee Kim
发明人： Jong-An Kim , Dong-Chun Lee , Chung-Sam Jun , Ik-Chul Kim , Sang-Hee Kim
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N2021/8825
摘要： An optical inspection tool used to detect surface defects of a substrate include a chuck for holding a substrate and a lens unit disposed over the chuck. The lens unit includes at least a pair of oblique beam paths therein, wherein light penetrating the beam paths travels without angular deflection. The beam paths take the form of spaces formed through the lens unit, or flat portions formed on a lens within the lens unit. A camera is installed on the lens unit, and the camera converts light passing through the lens unit into an image. Methods of detecting surface defects of the substrate using the inspection tool are also provided.
摘要翻译：用于检测基板的表面缺陷的光学检查工具包括用于保持基板的卡盘和设置在卡盘上方的透镜单元。透镜单元在其中包括至少一对倾斜光束路径，其中穿透光束路径的光行进而没有角度偏转。光束路径采取通过透镜单元形成的空间的形式，或形成在透镜单元内的透镜上的平坦部分。相机安装在镜头单元上，相机将通过镜头单元的光转换为图像。还提供了使用检查工具检测基板的表面缺陷的方法。

68. 发明授权

US07046760B2 Method of measuring and controlling concentration of dopants of a thin film 失效
标题翻译：测量和控制薄膜掺杂剂浓度的方法
公开(公告)号：US07046760B2
公开(公告)日：2006-05-16
申请号：US10789445
申请日：2004-03-01
申请人： Tae-Kyoung Kim , Sun-Yong Choi , Chung-Sam Jun , Jeong-Hyun Choi
发明人： Tae-Kyoung Kim , Sun-Yong Choi , Chung-Sam Jun , Jeong-Hyun Choi
IPC分类号： G01N23/223 , H01L21/66
CPC分类号： H01L22/14 , H01L21/32155
摘要： A method of measuring a concentration of dopants of an objective thin film includes measuring a concentration of dopants of a first wafer, forming the objective thin film on the first wafer to form a second wafer, measuring a concentration of dopants of the second wafer, and obtaining the concentration of dopants of the objective thin film by subtracting the concentration of dopants of the first wafer from the concentration of dopants of the second wafer. Therefore, the concentration of dopants of the objective thin film may be measured without the use of a criterion wafer, thereby reducing measuring time. Also, the concentration of dopants of the objective thin film may be easily controlled, and therefore promptly corrected if necessary.
摘要翻译：测量目标薄膜的掺杂剂浓度的方法包括测量第一晶片的掺杂剂的浓度，在第一晶片上形成目标薄膜以形成第二晶片，测量第二晶片的掺杂剂的浓度，以及通过从第二晶片的掺杂剂的浓度减去第一晶片的掺杂剂的浓度来获得目标薄膜的掺杂剂的浓度。因此，可以在不使用标准晶片的情况下测量目标薄膜的掺杂剂的浓度，从而减少测量时间。此外，可以容易地控制目标薄膜的掺杂剂的浓度，因此如果需要，可以及时校正。

69. 发明申请

US20050151456A1 Electron-beam inspection apparatus and methods of inspecting through-holes using clustered nanotube arrays 审中-公开
标题翻译：电子束检查装置和使用聚簇纳米管阵列检查通孔的方法
公开(公告)号：US20050151456A1
公开(公告)日：2005-07-14
申请号：US11028895
申请日：2005-01-04
申请人： Young-Jee Yoon , Chung-Sam Jun , Sang-Mun Chon
发明人： Young-Jee Yoon , Chung-Sam Jun , Sang-Mun Chon
IPC分类号： G01R31/302 , G01R31/307 , H01J1/304 , H01J3/02 , H01J37/065 , H01J37/073 , H01L21/66 , H01L21/768 , H01J1/02 , H01J1/14
CPC分类号： B82Y10/00 , G01R31/307 , H01J1/3042 , H01J37/073 , H01J2201/30469 , H01J2237/0635 , H01J2237/2594
摘要： Electron-beam generators have wide area and directional beam generation capability. The generators include anode and cathode electrodes, which are disposed in spaced-apart and opposing relationship relative to each other. A clustered carbon nanotube array is provided to support the wide area and directional beam generation. The clustered nanotube array extends between the anode and cathode electrodes. The nanotube array also has a wide area emission surface thereon, which extends opposite a primary surface of the anode electrode. The clustered nanotube array is configured so that nanotubes therein provide conductive channels for electrons, which pass from the cathode electrode to the anode electrode via the emission surface.
摘要翻译：电子束发生器具有广泛的面积和定向束产生能力。发生器包括阳极和阴极电极，它们彼此间隔开和相对地设置。提供聚簇碳纳米管阵列以支持广域和定向束产生。聚集的纳米管阵列在阳极和阴极之间延伸。纳米管阵列还具有与阳极电极的主表面相对延伸的广泛的发射表面。聚集的纳米管阵列被配置为使得其中的纳米管为电子提供导电通道，电子通过发射表面从阴极电极传递到阳极电极。

70. 发明申请

US20050018182A1 Method and apparatus for classifying defects of an object 有权
标题翻译：用于分类物体缺陷的方法和装置
公开(公告)号：US20050018182A1
公开(公告)日：2005-01-27
申请号：US10786137
申请日：2004-02-26
申请人： Pil-Sik Hyun , Sun-Yong Choi , Sang-Kil Lee , Chung-Sam Jun , Sang-Min Kim
发明人： Pil-Sik Hyun , Sun-Yong Choi , Sang-Kil Lee , Chung-Sam Jun , Sang-Min Kim
IPC分类号： H01L21/66 , G01N21/95 , G01N21/00
CPC分类号： G01N21/956 , G01N21/9501
摘要： A method for classifying defects of an object includes irradiating lights having different wavelengths onto the object to create an inspection spot on the object, collecting scattered lights generated by the irradiated lights scattering from the inspection spot, and classifying defects of the object by type of defect by analyzing the scattered lights. An apparatus for classifying defects of an object includes light creating means emitting lights having different wavelengths to create an inspection spot on the object, and a detecting member for collecting scattered lights that are created from the lights scattering from the inspection spot, wherein the scattered lights are analyzed and classified in accordance with defects positioned on the inspection spot of the object.
摘要翻译：用于对物体的缺陷进行分类的方法包括将不同波长的光照射到物体上以在物体上产生检查点，收集由检查点散射的照射光产生的散射光，并根据缺陷类型对物体的缺陷进行分类通过分析散射光。用于对物体的缺陷进行分类的装置包括：发光装置，其发射具有不同波长的光，以在物体上产生检查点;以及检测部件，用于收集从检查点散射的光产生的散射光，其中散射光根据位于物体检查点的缺陷进行分析和分类。

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