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61. 发明授权

US5530218A Spot welding apparatus 失效
标题翻译：点焊设备
公开(公告)号：US5530218A
公开(公告)日：1996-06-25
申请号：US374234
申请日：1995-01-18
申请人： Yoshio Nakamura , Shinichi Kitaguchi , Yoshihiko Yamaguchi
发明人： Yoshio Nakamura , Shinichi Kitaguchi , Yoshihiko Yamaguchi
IPC分类号： B23K11/31 , B23K37/02
CPC分类号： B23K11/314
摘要： In a spot welding apparatus in which a column (7) is stood on a base (5) provided with a worktable (3) for supporting work (W); and a welding arm (15) having an electrode (13) at a free end portion thereof is pivotally supported up and down at a lower portion of a support cylinder (11) hung from a support beam (9) supported by the column (7) horizontally, the spot welding apparatus comprises an arm supporting section (47) for supporting support members (49, 55, 53, 57) for pivotally supporting the welding arm (15), so as to be movable up and down relative to the support cylinder (11) and further urged upward; and an arm pressing section (37) for pressing a free end portion of the welding arm (15) downward against an urging force of the arm supporting section.
摘要翻译：在立柱（7）位于设置有用于支撑工件（W）的工作台（3）的基座（5）上的点焊装置中; 并且在其自由端部分具有电极（13）的焊接臂（15）在从支柱（7）支撑的支撑梁（9）悬挂的支撑筒（11）的下部处被上下可枢转地支撑），所述点焊装置包括用于支撑用于枢转地支撑所述焊接臂（15）的支撑构件（49,55,53,57）的臂支撑部（47），以便能够相对于所述支撑件上下移动气缸（11）并进一步向上推动; 以及用于将所述焊接臂（15）的自由端部抵抗所述臂支撑部的作用力向下方向下压的臂按压部（37）。

62. 发明授权

US5507883A Grain oriented electrical steel sheet having high magnetic flux density and ultra low iron loss and process for production the same 失效
标题翻译：具有高磁通密度和超低铁损的晶粒取向电工钢板及其制造方法相同
公开(公告)号：US5507883A
公开(公告)日：1996-04-16
申请号：US257765
申请日：1994-06-09
申请人： Osamu Tanaka , Hiroaki Masui , Hotaka Honma , Katsuro Kuroki , Tsutomu Haratani , Yoichi Mishima , Maremizu Ishibashi , Yoshio Nakamura
发明人： Osamu Tanaka , Hiroaki Masui , Hotaka Honma , Katsuro Kuroki , Tsutomu Haratani , Yoichi Mishima , Maremizu Ishibashi , Yoshio Nakamura
IPC分类号： C21D8/12 , H01F1/147 , H01F1/04
CPC分类号： C21D8/1283 , H01F1/14783 , C21D8/1255 , C21D8/1272
摘要： A grain oriented electrical steel sheet having no significant glass film and having a high magnetic flux density and an excellent iron loss property, comprising, in terms of by weight, 2.5 to 4.5% of Si, the steel sheet having, as oxides on its surface, a glass film comprising 0.6 g/m.sup.2 or less in total of forsterite and spinel composed of MgO, SiO.sub.2 and Al.sub.2 O.sub.3 and an insulating coating having a thickness of 6 .mu.m or less, the face tension imparted on the surface of the steel sheet by the coating being in the range of from 0.5 to 2.0 kg/mm.sup.2. In the final box annealing of the steel sheet after primary recrystallization annealing, use is made of an annealing separator comprising 100 parts by weight of MgO and, added thereto, 2 to 30 parts by weight of at least one member selected from the group consisting of chlorides, carbonates, nitrates, sulfates and sulfides of Li, K, Bi, Na, Ba, Ca, Mg, Zn, Fe, Zr, Sr, Sn, Al, etc., and the heating in the final box annealing is effected in an atmosphere comprising N.sub.2 and H.sub.2 with the nitrogen content being 30% or more at a heating rate of 20.degree. C./hr or less, and a seam or spotty flaw is imparted at an angle of 45.degree. to 90.degree. to the rolling direction of the steel sheet.
摘要翻译：一种不具有显着玻璃膜并且具有高磁通密度和优异的铁损特性的晶粒取向电工钢板，其中，按重量计包含2.5至4.5％的Si，该钢板在其表面上具有氧化物，由MgO，SiO 2和Al 2 O 3组成的镁橄榄石和尖晶石的总计为0.6g / m 2以下的玻璃膜和厚度为6μm以下的绝缘涂层，通过以下方式赋予钢板表面的表面张力涂层在0.5至2.0kg / mm 2的范围内。在一次再结晶退火后的钢板的最终退火中，使用包含100重量份MgO的退火分离剂，向其中加入2〜30重量份的选自以下的至少一种： Li，K，Bi，Na，Ba，Ca，Mg，Zn，Fe，Zr，Sr，Sn，Al等的氯化物，碳酸盐，硝酸盐，硫酸盐和硫化物，最终箱退火中的加热是包含N 2和H 2的气氛，氮含量在20℃/小时以下的加热速率为30％以上，接缝或斑点缺陷与轧制方向成45度〜90度的角度的钢板。

63. 发明授权

US5302855A Contact electrode structure for semiconductor device 失效
标题翻译：半导体器件接触电极结构
公开(公告)号：US5302855A
公开(公告)日：1994-04-12
申请号：US757480
申请日：1991-09-10
申请人： Shigeyuki Matsumoto , Masaru Sakamoto , Yoshio Nakamura
发明人： Shigeyuki Matsumoto , Masaru Sakamoto , Yoshio Nakamura
IPC分类号： H01L21/285 , H01L21/768 , H01L23/485 , H01L23/532 , H01L23/48 , H01L29/44
CPC分类号： H01L23/53223 , H01L21/28562 , H01L21/76877 , H01L23/485 , H01L2924/0002
摘要： A semiconductor device and a manufacture method for the semiconductor device, the method comprising the steps of forming an insulating film on the surface of a semiconductor substrate, forming contact holes in the insulating layer to expose the surface of the semiconductor substrate, selectively depositing a metal film, which contains aluminum as a main ingredient, on the exposed surface to form an electrodes in each the contact hole, and forming a wiring made of a second metal, which contains as a principal ingredient an element other than aluminum, on both the insulating layer and the electrode. Preferably, the upper surface of each electrode is substantially flat in a connecting portion between the electrode and the wiring, and a relationship of A.gtoreq.C is established where A is a length of one side of the electrode's upper surface and C is a width of the wiring in the connecting portion therebetween. The metal film is produced at a high deposition rate and a high throughput while ensuring good reliability and presenting superior film characteristics such as step coverage and electro migration.
摘要翻译：一种半导体器件的半导体器件和制造方法，所述方法包括以下步骤：在半导体衬底的表面上形成绝缘膜，在所述绝缘层中形成接触孔以暴露所述半导体衬底的表面，选择性地沉积金属在暴露的表面上形成在每个接触孔中的电极的膜，并且形成由第二金属制成的布线，该第二金属作为主要成分包含除了铝之外的元素，在绝缘层和电极。优选地，每个电极的上表面在电极和布线之间的连接部分中基本平坦，并且建立A> = C的关系，其中A是电极上表面的一侧的长度，C是宽度在其间的连接部分中的布线。金属膜以高沉积速率和高产量生产，同时确保良好的可靠性并呈现出优异的薄膜特性，如台阶覆盖和电迁移。

64. 发明授权

US5070034A Process for producing a semiconductor memory device 失效
标题翻译：半导体存储器件的制造方法
公开(公告)号：US5070034A
公开(公告)日：1991-12-03
申请号：US590585
申请日：1990-09-28
申请人： Tamotsu Satoh , Takao Yonehara , Yoshio Nakamura
发明人： Tamotsu Satoh , Takao Yonehara , Yoshio Nakamura
IPC分类号： H01L27/10 , H01L21/20 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L27/12
CPC分类号： H01L27/10873 , H01L21/02381 , H01L21/0242 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/8221 , H01L27/10805 , H01L27/1203
摘要： A semiconductor memory device is provided with memory cells each having a capacitor for accumulating an electric charge and a transistor for charging and discharging the capacitor. The memory device comprises a substrate, an insulator layer formed thereon and a monocrystalline semiconductor layer formed thereon. The capacitor is composed of said monocrystalline semiconductor layer, the insulator layer and the substrate while the transistor is formed in the monocrystalline semiconductor layer.
摘要翻译：半导体存储器件设置有各自具有用于累积电荷的电容器和用于对电容器进行充电和放电的晶体管的存储单元。存储器件包括衬底，形成在其上的绝缘体层和形成在其上的单晶半导体层。电容器由所述单晶半导体层，绝缘体层和衬底组成，而晶体管形成在单晶半导体层中。

65. 发明授权

US5063152A Synthetic peptidic substrate for determination of trypsin and .alpha..sub.1 失效
标题翻译：合成肽基质用于测定TRYPSIN和（ALPHA）1-抗菌素
公开(公告)号：US5063152A
公开(公告)日：1991-11-05
申请号：US410099
申请日：1989-09-20
申请人： Takeshi Nagasawa , Yuko Gemba , Yoshio Nakamura , Katsumasa Kuroiwa
发明人： Takeshi Nagasawa , Yuko Gemba , Yoshio Nakamura , Katsumasa Kuroiwa
IPC分类号： C07K5/08 , C07K1/113 , C07K5/02 , C12Q1/37 , G01N33/50
CPC分类号： C07K5/0205 , C12Q1/37 , C12Q2337/00 , G01N2333/976 , Y10S530/802
摘要： A synthetic peptide of the formula: H-.sub.D -A.sub.1 -Leu-Lys-NH ##STR1## wherein A.sub.1 is Pro or Ala, is excellent in solubility in water and substrate specificity and is suitable as a substrate for determining trypsin and .alpha..sub.1 -antitrypsin.

66. 发明授权

US5019603A Process for the production of porous phenolic resin fibers 失效
标题翻译：生产多孔酚醛树脂纤维的方法
公开(公告)号：US5019603A
公开(公告)日：1991-05-28
申请号：US457528
申请日：1989-12-27
申请人： Yoshikazu Arita , Yukio Abe , Toshi Iizuka , Yoshio Nakamura , Shoji Takigami , Machiko Takigami
发明人： Yoshikazu Arita , Yukio Abe , Toshi Iizuka , Yoshio Nakamura , Shoji Takigami , Machiko Takigami
IPC分类号： D06M14/30 , D01F6/76 , D01F9/24 , D01F11/08 , D06M13/02 , D06M13/224 , D06M14/12 , D06M101/00 , D06M101/16 , D06M101/30
CPC分类号： D01F9/24 , D01F11/08 , D06M14/12
摘要： A process for the production of porous phenolic resin fibers is disclosed, which process comprises graft-polymerizing to phenolic resin fibers a vinyl group-containing monomer capable of forming a thermally decomposable polymer, and thereafter subjecting the fibers to a heat treatment at a temperature high enough to cause thermal decomposition of the graft polymer. The product thus obtained is excellent in heat-resistance and adiabatic property in addition to useful properties inherent to phenolic resin fibers.
摘要翻译：公开了一种生产多孔酚醛树脂纤维的方法，该方法包括将能形成可热分解聚合物的含乙烯基基团的单体接枝聚合到酚醛树脂纤维上，然后在高温下进行热处理足以引起接枝聚合物的热分解。由此获得的产品除了酚醛树脂纤维固有的有用特性之外，还具有优异的耐热性和绝热性。

67. 发明授权

US4889493A Method of manufacturing the substrate of GaAs compound semiconductor 失效
标题翻译：制造GaAs化合物半导体衬底的方法
公开(公告)号：US4889493A
公开(公告)日：1989-12-26
申请号：US229993
申请日：1988-08-09
申请人： Yasuo Otsuki , Yoshio Nakamura
发明人： Yasuo Otsuki , Yoshio Nakamura
IPC分类号： C30B29/42 , C30B33/00 , C30B33/02 , H01L21/304 , H01L21/324
CPC分类号： C30B33/00 , C30B29/42 , Y10S438/974
摘要： A method of manufacturing a substrate of a GaAs compound semiconductor is disclosed, which is characterized in that, after a crystal of GaAs compound semiconductor obtained by the liquid encapsulated Czocharalski method is annealed in the form of ingot, gradually cooled to room temperature and cut off in the form of a wafer, a re-heating treatment consisting of heating to a temperature of not lower than 700.degree. C., rapid cooling from the temperature of not lower than 700.degree. C. to a temperature of not higher than 400.degree. C. within 30 minutes and successive cooling to room temperature is given to the wafer, and then mirror polishing is performed.
摘要翻译：公开了一种制造GaAs化合物半导体衬底的方法，其特征在于，通过液晶封装的Czocharalski法获得的GaAs化合物半导体的晶体以锭的形式退火，逐渐冷却至室温并切断以晶片的形式，加热至不低于700℃的再加热处理，从不低于700℃的温度快速冷却至不高于400℃的温度在30分钟内连续冷却至室温，然后进行镜面抛光。

68. 发明授权

US4866293A Photoelectric converting apparatus to prevent the outflow of excess carriers 失效
标题翻译：光电转换装置防止多余载流子的流出
公开(公告)号：US4866293A
公开(公告)日：1989-09-12
申请号：US128949
申请日：1987-12-04
申请人： Yoshio Nakamura , Shigetoshi Sugawa
发明人： Yoshio Nakamura , Shigetoshi Sugawa
IPC分类号： H01L27/146 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/374
CPC分类号： H04N5/3591 , H01L27/14681 , H04N3/1568 , H04N5/3692 , H04N5/374
摘要： There is a photoelectric converting apparatus having a photoelectric converting cell of the type in which by controlling the potential of a control electrode region of a semiconductor transistor, the carriers generated in the control electrode region by the light excitation are accumulated, and the accumulation voltage generated by this accumulation is read out from one of the main electrode regions of the semiconductor transistor. The control electrode region is connected to an excess carrier eliminating circuit to perform the switching operation in dependence on the potential difference across the control electrode region.

69. 发明授权

US4452736A Substrates for measuring plasmin 失效
标题翻译：用于测量纤溶酶的底物
公开(公告)号：US4452736A
公开(公告)日：1984-06-05
申请号：US417377
申请日：1982-09-13
申请人： Takeshi Nagasawa , Katsumasa Kuroiwa , Katsuyuki Takabayashi , Yoshio Nakamura
发明人： Takeshi Nagasawa , Katsumasa Kuroiwa , Katsuyuki Takabayashi , Yoshio Nakamura
IPC分类号： G01N33/52 , C07K5/083 , C07K5/09 , C07K5/093 , C12Q1/37 , C12Q1/56 , G01N33/50 , C07C103/52
CPC分类号： C07K5/0808 , C07K5/0806 , C07K5/0815 , C07K5/0819 , C12Q1/37 , C12Q2337/10 , C12Q2337/12 , G01N2333/968
摘要： A novel substrate for measuring plasmin which has chromophoric and fluoroescent properties against plasmin or a plasmin-like enzyme, which is characterized by being a compound of the formula or a salt thereof: ##STR1## wherein ##STR2## wherein ##STR3## .
摘要翻译：一种用于测量纤溶酶的新型底物，其具有针对纤溶酶或纤溶酶样酶的发色和荧光特性，其特征在于下式化合物或其盐：其中m = 1,2,3或4，其中R1 = （n = 0,1,2或3，R3 = H或CH3），（CH2）nCH（CH3）2（n = 0,1,2或3 R2 =（CH2）n + 1CH3（n = 0,1,2或3）图像（n = 0,1,2或3，R4，R4和R4“为H或CH3）。

70. 发明授权

US4337498A Small ignition device comprising string-like silicon carbide heating element affixed to terminal supports 失效
标题翻译：小型点火装置，其包括固定在端子支架上的串状碳化硅加热元件
公开(公告)号：US4337498A
公开(公告)日：1982-06-29
申请号：US184421
申请日：1980-09-05
申请人： Masayosi Takahasi , Sadatosi Nakazono , Yoshio Nakamura
发明人： Masayosi Takahasi , Sadatosi Nakazono , Yoshio Nakamura
IPC分类号： H05B3/14 , C04B35/571 , F23Q7/22 , F23Q7/00
CPC分类号： F23Q7/22 , C04B35/571
摘要： A small ignition device comprising a string-like silicon carbide heating element extending between and joining in electrical connection respective silicon carbide rod-like terminals. The heating element is joined to the terminals by an electrically conductive silicon joint. The string-like element has all cross-sectional dimensions between 0.05 mm and 2 mm and has a resistivity of between 0.01.OMEGA..multidot.cm and 10.OMEGA..multidot.cm whereby said heating element is heated to between about 1000.degree. C. and 1300.degree. C. in about 1 to 4 seconds after an electric current is connected thereto.
摘要翻译：一种小型点火装置，包括在相应的碳化硅棒状端子之间电连接并在其之间连接的串状碳化硅加热元件。加热元件通过导电硅接头连接到端子。线状元件的所有横截面尺寸均在0.05mm与2mm之间，电阻率介于0.01MEGEGA×10MEGA×xcm之间，由此将所述加热元件加热到大约1000℃至1300℃之间电流连接1〜4秒。

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