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61. 发明授权

US06920063B2 Magnetic element utilizing spin transfer and an MRAM device using the magnetic element 有权
标题翻译：利用自旋转移的磁性元件和使用该磁性元件的MRAM器件
公开(公告)号：US06920063B2
公开(公告)日：2005-07-19
申请号：US10741188
申请日：2003-12-18
申请人： Yiming Huai , Paul P. Nguyen
发明人： Yiming Huai , Paul P. Nguyen
IPC分类号： G11C11/15 , G11C11/16 , H01F10/32 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/14
CPC分类号： H01F10/3263 , B82Y25/00 , B82Y40/00 , H01F41/302
摘要： A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供能够使用自旋传递效应写入的磁性元件同时产生高输出信号的磁性元件和使用该磁性元件的磁性存储器的方法和系统。磁性元件包括第一铁磁性钉扎层，非磁性间隔层，铁磁性自由层，绝缘阻挡层和第二铁磁性钉扎层。钉扎层具有沿第一方向固定的磁化。非磁性间隔层是导电的并且在第一被钉扎层和自由层之间。阻挡层位于自由层和第二被钉扎层之间，并且是具有允许电子隧穿穿过阻挡层的厚度的绝缘体。第二被钉扎层具有沿第二方向固定的磁化。磁性元件配置成当写入电流通过磁性元件时，由于自旋转移使自由层的磁化改变方向。

62. 发明申请

US20050045913A1 Magnetic memory element utilizing spin transfer switching and storing multiple bits 有权
标题翻译：磁存储元件利用自旋转移切换和存储多个位
公开(公告)号：US20050045913A1
公开(公告)日：2005-03-03
申请号：US10649119
申请日：2003-08-26
申请人： Paul Nguyen , Yiming Huai
发明人： Paul Nguyen , Yiming Huai
IPC分类号： G11C11/16 , H01F10/32 , H01L43/08 , H01L31/109
CPC分类号： G11C11/16 , B82Y25/00 , G11C11/5607 , H01F10/3263 , H01L43/08
摘要： A method and system for providing a magnetic element capable of storing multiple bits is disclosed. The method and system include providing first pinned layer, a first nonmagnetic layer, a first free layer, a connecting layer, a second pinned layer, a second nonmagetic layer and a second free layer. The first pinned layer is ferromagnetic and has a first pinned layer magnetization pinned in a first direction. The first nonmagnetic layer resides between the first pinned layer and the first free layer. The first free layer being ferromagnetic and has a first free layer magnetization. The second pinned layer is ferromagnetic and has a second pinned layer magnetization pinned in a second direction. The connecting layer resides between the second pinned layer and the first free layer. The second nonmagnetic layer resides between the second pinned layer and the second free layer. The second free layer being ferromagnetic and having a second free layer magnetization. The magnetic element is configured to allow the first free layer magnetization and the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供能够存储多个位的磁性元件的方法和系统。该方法和系统包括提供第一被钉扎层，第一非磁性层，第一自由层，连接层，第二钉扎层，第二非弹性层和第二自由层。第一固定层是铁磁性的并且具有沿第一方向固定的第一固定层磁化。第一非磁性层位于第一被钉扎层和第一自由层之间。第一自由层是铁磁性的并且具有第一自由层磁化。第二被钉扎层是铁磁性的并且具有沿第二方向固定的第二钉扎层磁化。连接层位于第二被钉扎层和第一自由层之间。第二非磁性层位于第二被钉扎层和第二自由层之间。第二自由层是铁磁性的并且具有第二自由层磁化。磁性元件被配置为当写入电流通过磁性元件时，由于自旋转移使第一自由层磁化和第二自由层磁化改变方向。

63. 发明授权

US06201673B1 System for biasing a synthetic free layer in a magnetoresistance sensor 有权
标题翻译：用于在磁阻传感器中偏置合成自由层的系统
公开(公告)号：US06201673B1
公开(公告)日：2001-03-13
申请号：US09285318
申请日：1999-04-02
申请人： Robert E. Rottmayer , Jain-Gang Zhu , Kenneth Everett Knapp , Yiming Huai
发明人： Robert E. Rottmayer , Jain-Gang Zhu , Kenneth Everett Knapp , Yiming Huai
IPC分类号： G11B5127
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/3932
摘要： A system and method for providing a magnetoresistive head is disclosed. The method and system include providing a spin valve including a synthetic free layer. The synthetic free layer includes a ferromagnetic layer. The method and system also include providing an antiferromagnetic biasing layer exchange coupled to a first portion of the ferromagnetic layer. The antiferromagnetic biasing layer magnetically biases the synthetic free layer to ensure the single domain structure and reduce noise.
摘要翻译：公开了一种用于提供磁阻头的系统和方法。该方法和系统包括提供包括合成自由层的自旋阀。合成自由层包括铁磁层。该方法和系统还包括提供耦合到铁磁层的第一部分的反铁磁偏置层交换。反铁磁偏置层对合成自由层进行磁偏置，以确保单畴结构并降低噪声。

64. 发明授权

US06175476B1 Synthetic spin-valve device having high resistivity anti parallel coupling layer 有权
标题翻译：具有高电阻率反平行耦合层的合成自旋阀装置
公开(公告)号：US06175476B1
公开(公告)日：2001-01-16
申请号：US09135939
申请日：1998-08-18
申请人： Yiming Huai , Marcos Lederman
发明人： Yiming Huai , Marcos Lederman
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B5/3929 , G11B2005/3996
摘要： The present invention provides an improved synthetic spin valve sensor having a high resistivity antiparallel coupling layer, typically formed of rhenium, between pinned layers. The spin valve sensor of the present invention may be formed having a layered structure as follows: pinning layer/first pinned layer/high resistivity antiparallel coupling layer/second pinned layer/metallic nonferromagnetic spacer layer/free layer. Capping and seed layers typically are also included. The high resistivity of the antiparallel coupling layer of the present invention reduces shunt current through that layer to improve the GMR effect of the spin valve while maintaining sufficient antiparallel coupling between the pinned layers. The antiparallel coupling layer of the present invention also provides improved thermal stability.
摘要翻译：本发明提供了一种改进的合成自旋阀传感器，其具有通常由铼形成的高电阻率反平行耦合层，在钉扎层之间。本发明的自旋阀传感器可以形成为如下层状结构：钉扎层/第一钉扎层/高电阻率反并联耦合层/第二钉扎层/金属非铁磁隔离层/自由层。通常还包括封盖和种子层。本发明的反并联耦合层的高电阻率降低了通过该层的分流电流，以改善自旋阀的GMR效应，同时保持被钉扎层之间的足够的反平行耦合。本发明的反平行耦合层还提供了改进的热稳定性。

65. 发明授权

US11678586B2 Memory system having thermally stable perpendicular magneto tunnel junction (MTJ) and a method of manufacturing same 有权
公开(公告)号：US11678586B2
公开(公告)日：2023-06-13
申请号：US13737897
申请日：2013-01-09
申请人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
发明人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
IPC分类号： H10N50/80 , G11C11/16 , H10N50/01 , H10N50/10
CPC分类号： H10N50/80 , G11C11/161 , H10N50/01 , H10N50/10 , Y10T428/1107 , Y10T428/1114
摘要： A spin-transfer torque magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL. The second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.

66. 发明授权

US09196332B2 Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer 有权
标题翻译：垂直磁隧道结（pMTJ），具有平面内静磁切换增强层
公开(公告)号：US09196332B2
公开(公告)日：2015-11-24
申请号：US13161412
申请日：2011-06-15
申请人： Jing Zhang , Yuchen Zhou , Rajiv Yadav Ranjan , Yiming Huai
发明人： Jing Zhang , Yuchen Zhou , Rajiv Yadav Ranjan , Yiming Huai
IPC分类号： H01L29/82 , G11C11/16 , H01L43/08
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , H01L43/02 , H01L43/08 , H01L43/10
摘要： An STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer, causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.
摘要翻译： STTMRAM元件包括具有垂直磁方位的磁性隧道结（MTJ）。 MTJ包括阻挡层，形成在阻挡层顶部上并具有相对于固定层的磁性取向垂直和可切换的磁性取向的自由层。当电流流过STTMRAM元件时，自由层的磁方向切换。通过间隔层从自由层分离的开关增强层（SEL）形成在自由层的顶部上并且具有面内磁性取向并且在自由层上产生磁静电场，导致磁矩的自由层的外边缘以面内分量倾斜，同时最小程度地干扰自由层中心处的磁矩，以便自由层的切换和降低阈值电压/电流。

67. 发明授权

US09082695B2 Vialess memory structure and method of manufacturing same 有权
标题翻译：无记忆结构及其制造方法
公开(公告)号：US09082695B2
公开(公告)日：2015-07-14
申请号：US13154346
申请日：2011-06-06
申请人： Kimihiro Satoh , Yiming Huai , Jing Zhang
发明人： Kimihiro Satoh , Yiming Huai , Jing Zhang
IPC分类号： H01L29/82 , H01L21/8246 , H01L43/12 , H01L27/115 , H01L27/22 , H01L43/08
CPC分类号： H01L27/222 , H01L27/224 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of manufacturing a magnetic memory cell, including a magnetic tunnel junction (MTJ), includes using silicon nitride layer and silicon oxide layer to form a trench for depositing copper to be employed for connecting the MTJ to other circuitry without the use of a via.
摘要翻译：包括磁性隧道结（MTJ）的磁性存储单元的制造方法包括使用氮化硅层和氧化硅层形成用于沉积铜的沟槽，用于将MTJ连接到其它电路而不使用通孔。

68. 发明授权

US09054298B2 Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same 有权
公开(公告)号：US09054298B2
公开(公告)日：2015-06-09
申请号：US13439817
申请日：2012-04-04
申请人： Yuchen Zhou , Yiming Huai
发明人： Yuchen Zhou , Yiming Huai
IPC分类号： H01L43/12 , H01L43/10 , H01F10/32 , H01F41/30 , B82Y40/00
CPC分类号： H01L43/12 , B82Y40/00 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10
摘要： A spin transfer torque magnetic random access memory (STTMRAM) element and a method of manufacturing the same is disclosed having a free sub-layer structure with enhanced internal stiffness. A first free sub-layer is deposited, the first free sub-layer being made partially of boron (B), annealing is performed of the STTMRAM element at a first temperature after depositing the first free sub-layer to reduce the B content at an interface between the first free sub-layer and the barrier layer, the annealing causing a second free sub-layer to be formed on top of the first free sub-layer and being made partially of B, the amount of B of the second free sub-layer being greater than the amount of B in the first free sub-layer. Cooling down the STTMRAM element to a second temperature that is lower than the first temperature and depositing a third free sub-layer directly on top of the second free layer, with the third free sub-layer being made partially of boron (B), wherein the amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.

69. 发明授权

US08971100B2 Initialization method of a perpendicular magnetic random access memory (MRAM) device 有权
标题翻译：垂直磁随机存取存储器（MRAM）器件的初始化方法
公开(公告)号：US08971100B2
公开(公告)日：2015-03-03
申请号：US13546169
申请日：2012-07-11
申请人： Yuchen Zhou , Yiming Huai
发明人： Yuchen Zhou , Yiming Huai
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/161 , G11C11/5607 , G11C2013/0083 , Y10S977/933 , Y10S977/935
摘要： Methods using a sequence of externally generated magnetic fields to initialize the magnetization directions of each of the layers in perpendicular MTJ MRAM elements for data and reference bits when the required magnetization directions are anti-parallel are described. The coercivity of the fixed pinned and reference layers can be made unequal so that one of them can be switched by a magnetic field that will reliably leave the other one unswitched. Embodiments of the invention utilize the different effective coercivity fields of the pinned, reference and free layers to selectively switch the magnetization directions using a sequence of magnetic fields of decreasing strength. Optionally the chip or wafer can be heated to reduce the required field magnitude. It is possible that the first magnetic field in the sequence can be applied during an annealing step in the MRAM manufacture process.
摘要翻译：描述了当所需的磁化方向为反平行时，使用外部产生的磁场序列来初始化用于数据和参考位的垂直MTJ MRAM元件中的每个层的磁化方向的方法。可以使固定的固定和参考层的矫顽力不相等，使得它们中的一个可以通过可靠地离开另一个非磁性的磁场来切换。本发明的实施例利用被钉扎，参考和自由层的不同有效矫顽力场，使用一系列降低强度的磁场来选择性地切换磁化方向。可选地，可以加热芯片或晶片以减少所需的场强。可以在MRAM制造过程中的退火步骤期间施加序列中的第一磁场。

70. 发明授权

US08806284B2 Method for bit-error rate testing of resistance-based RAM cells using a reflected signal 有权
标题翻译：使用反射信号对基于电阻的RAM单元进行误码率测试的方法
公开(公告)号：US08806284B2
公开(公告)日：2014-08-12
申请号：US13462708
申请日：2012-05-02
申请人： Zihui Wang , Yuchen Zhou , Jing Zhang , Yiming Huai
发明人： Zihui Wang , Yuchen Zhou , Jing Zhang , Yiming Huai
IPC分类号： G06F11/00 , G11C29/00 , G11C29/50 , G11C29/44
CPC分类号： G11C29/50008 , G11C11/16 , G11C13/00 , G11C29/08 , G11C29/44 , G11C29/50 , G11C29/56008 , G11C29/56016 , G11C2029/5602
摘要： A testing method is described for performing a fast bit-error rate (BER) measurement on resistance-based RAM cells, such MTJ cells, at the wafer or chip level. Embodiments use one or more specially designed test memory cells fabricated with direct electrical connections between the two electrodes of the cell and external contact pads (or points) on the surface of the wafer (or chip). In the test setup the memory cell is connected an impedance mismatched transmission line through a probe for un-buffered, fast switching of the cell between the high and low resistance states without the need for CMOS logic to select and drive the cell. The unbalanced transmission line is used generate signal reflections from the cell that are a function of the resistance state. The reflected signal is used to detect whether the test cell has switched as expected.
摘要翻译：描述了一种测试方法，用于在晶片或芯片级上对基于电阻的RAM单元（如MTJ单元）执行快速误码率（BER）测量。实施例使用一个或多个专门设计的测试存储单元，该测试存储单元通过电池的两个电极和晶片（或芯片）表面上的外部接触垫（或点）之间的直接电连接制造。在测试设置中，存储单元通过探头连接阻抗不匹配的传输线，用于高电阻和低电阻状态之间的单元的非缓冲，快速切换，而不需要CMOS逻辑来选择和驱动单元。使用不平衡传输线从电池产生作为电阻状态的函数的信号反射。反射信号用于检测测试单元是否按预期切换。

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