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61. 发明授权

US5500385A Method for manufacturing a silicon capacitor by thinning 失效
标题翻译：通过减薄制造硅电容器的方法
公开(公告)号：US5500385A
公开(公告)日：1996-03-19
申请号：US451534
申请日：1995-05-26
申请人： Hermann Wendt , Josef Willer , Hans Reisinger , Volker Lehmann
发明人： Hermann Wendt , Josef Willer , Hans Reisinger , Volker Lehmann
IPC分类号： H01L27/04 , H01L21/225 , H01L21/334 , H01L21/822 , H01L21/762
CPC分类号： H01L29/66181 , Y10S438/924 , Y10S438/928 , Y10S438/977
摘要： For manufacturing a silicon capacitor, hole openings are produced in an n-doped silicon substrate, a p.sup.+ -doped region is formed at the surface thereof and this surface is provided with a dielectric layer together with a conductive layer. The silicon substrate is thinned with an etching proceeding from the back side, this etching attacking silicon selectively to p.sup.+ -doped silicon and therefore stopping when the p.sup.+ -doped region is reached.
摘要翻译：为了制造硅电容器，在n掺杂硅衬底中产生孔开口，在其表面形成p +掺杂区域，并且该表面与导电层一起设置介电层。硅衬底通过从背面进行的蚀刻变薄，该蚀刻选择性地攻击到p +掺杂的硅，因此当达到p +掺杂区域时停止。

62. 发明授权

US5480197A Toggle catch for intake air filters of internal-combustion engines, compressors and other machines which take in air 失效
标题翻译：切换内置发动机，压缩机和其他吸入空气的机器的进气过滤器
公开(公告)号：US5480197A
公开(公告)日：1996-01-02
申请号：US145166
申请日：1993-11-03
申请人： Volker Ernst , Rudi Hainle , Volker Lehmann
发明人： Volker Ernst , Rudi Hainle , Volker Lehmann
IPC分类号： F02M35/00 , B01D46/42 , B65D45/06 , E05C19/14 , E05C19/18 , F02M35/02 , F02M35/024 , F02M35/026 , F16B2/18
CPC分类号： B01D46/0004 , E05C19/14 , E05C19/186 , F02M35/0203 , B01D2265/028 , F16B2/18 , Y10S292/49 , Y10T292/0917 , Y10T292/202
摘要： A toggle catch for the closing of first and second housing parts of intake air filters for machines which take in air has a toggle lever which pivotally engages in a bearing opening of an abutment, and a hook part. This hook part is pivotally fixed on the toggle lever. The hook part reaches over a projection of the first housing part. A spring band element is provided that has an end-face ear forming the abutment. The spring band element has a hook-shaped end that is engageable in a form-locking manner in a recess of the second housing part.
摘要翻译：用于关闭吸入空气的机器的进气过滤器的第一和第二壳体部分的掣子具有肘节杆，其枢转地接合在邻接件的轴承开口中以及钩部。该钩部可枢转地固定在肘杆上。钩部分到达第一壳体部分的突出部分。提供弹簧带元件，其具有形成基台的端面耳。弹簧带元件具有钩形端部，该钩形端部以形状锁定的方式接合在第二壳体部分的凹部中。

63. 发明授权

US5403752A Method for manufacturing a pyrodetector apparatus 失效
标题翻译：热分析仪器的制造方法
公开(公告)号：US5403752A
公开(公告)日：1995-04-04
申请号：US242243
申请日：1994-05-13
申请人： Rainer Bruchhaus , Volker Lehmann
发明人： Rainer Bruchhaus , Volker Lehmann
IPC分类号： G01J5/28 , B81C1/00 , G01J5/34 , G02B6/122 , H01L21/28 , H01L21/3063 , H01L37/02 , H01L21/306 , H01L21/76
CPC分类号： G02B6/1221 , H01L37/02 , Y10S438/977
摘要： A method for manufacturing a pyrodetector apparatus having hole structures produced by electrochemical etching in a first principal face of a substrate of n-doped, monocrystalline silicon, so that a structured region arises in the substrate. At least one pyrodetector element is arranged on the first principal face above the structured region.
摘要翻译：一种用于制造具有通过在n掺杂的单晶硅的衬底的第一主面中通过电化学蚀刻产生的孔结构的热解测量仪的方法，使得在衬底中出现结构化区域。在结构化区域上方的第一主面上设置至少一个热分析元件。

64. 发明授权

US5360759A Method for manufacturing a component with porous silicon 失效
标题翻译：用多孔硅制造部件的方法
公开(公告)号：US5360759A
公开(公告)日：1994-11-01
申请号：US123605
申请日：1993-09-17
申请人： Reinhard Stengl , Wolfgang Hoenlein , Volker Lehmann , Andreas Spitzer
发明人： Reinhard Stengl , Wolfgang Hoenlein , Volker Lehmann , Andreas Spitzer
IPC分类号： H01L21/28 , H01L21/306 , H01L31/11 , H01L33/34 , H01L21/283 , H01L21/265
CPC分类号： H01L33/346 , H01L21/306 , H01L31/1105 , Y10S438/96
摘要： For manufacturing a component with porous silicon, two highly doped regions with a lightly doped region arranged between them are formed in a silicon wafer. The dopant concentrations are thereby set such that porous silicon arises in the lightly doped region in a subsequent anodic etching. Light-emitting diodes or light-controlled bipolar transistors can be manufactured in this way.
摘要翻译：为了制造具有多孔硅的部件，在硅晶片中形成具有布置在它们之间的轻掺杂区域的两个高掺杂区域。因此，掺杂剂浓度被设定为使得随后的阳极蚀刻在轻掺杂区域中产生多孔硅。可以以这种方式制造发光二极管或光控双极晶体管。

65. 发明授权

US5130643A Method for determining the recombination rate of minority carriers at boundary surfaces between semiconductors and other substances 失效
标题翻译：用于确定少数载体在半导体与其他物质之间的边界表面的重组速率的方法
公开(公告)号：US5130643A
公开(公告)日：1992-07-14
申请号：US617588
申请日：1990-11-26
申请人： Helmut Foell , Volker Lehmann
发明人： Helmut Foell , Volker Lehmann
IPC分类号： G01N21/00 , G01R31/265 , H01L21/66
CPC分类号： G01R31/2656
摘要： For a two-stage measuring method, a respective cell having an electrode therein is applied to the front surface and to the rear surface of a semiconductor wafer, whereby only the cell as the rear surface is filled with an electrolyte in the first measuring step. The minority carrier photo current I.sub.2 ' flowing between the electrode and the semiconductor surface in the rear cell, given illumination of the front cell of the semiconductor crystal wafer, is dependent on the recombination speed S at the front surface. In the second measuring step, the front cell is also filled with electrolyte and both the rear surface photo current I.sub.2, given what is now a negligible influence of the value S as well as the front surface photo current I.sub.1 are measured. The recombination speed S can be calculated from the measure photo currents with the assistance of a mathematical equation. Given point-by-point illumination and scanning over the crystal wafer, the topical distribution of the recombination speed is obtained.
摘要翻译：对于两级测量方法，其中具有电极的各个单元被施加到半导体晶片的前表面和后表面，由此在第一测量步骤中仅仅将电池作为后表面填充有电解质。在半导体晶体晶片的正面单元的照明下，在电池中的电极和半导体表面之间流动的少数载流子光电流I2'取决于前表面的复合速度S. 在第二测量步骤中，前电池还充满电解质，并且测量了现在对值S以及前表面光电流I1可忽略的影响的背面光电流I2。可以借助于数学方程式从测量光电流计算复合速度S. 通过逐点照明和晶片上的扫描，可获得复合速度的局部分布。

66. 发明授权

US5128514A Black radiator for use as an emitter in calibratable gas sensors 失效
标题翻译：用作可校准气体传感器中的发射器的黑色散热器
公开(公告)号：US5128514A
公开(公告)日：1992-07-07
申请号：US212799
申请日：1988-06-29
申请人： Volker Lehmann , Helmut Foell
发明人： Volker Lehmann , Helmut Foell
IPC分类号： G01J3/10 , G01J5/52 , G01N21/01 , G01N21/3504 , H05B3/20 , H05B3/26
CPC分类号： H05B3/265 , G01J5/522 , G01N21/3504 , H05B2203/032
摘要： The black radiator contains a doped, crystalline silicon member having a honeycombed surface and contains a controllable electrical heating mechanism with which the silicon member can be heated. The heating mechanism has a heating coil that is a doped silicon structure that is oppositely doped to the doping of the silicon member and to which a controllable voltage is applied. The manufacturing method provides that the silicon member having a honeycombed surface be manufactured from an n-silicon member by electrolytic etching.
摘要翻译：黑色散热器包含具有蜂窝表面的掺杂的结晶硅构件，并且包含可加热硅构件的可控电加热机构。加热机构具有加热线圈，该加热线圈是与硅构件的掺杂相反地掺杂并且施加可控电压的掺杂硅结构。制造方法提供具有蜂窝表面的硅构件通过电解蚀刻由n硅构件制造。

67. 发明授权

US4874484A Etching method for generating apertured openings or trenches in layers or substrates composed of n-doped silicon 失效
标题翻译：用于在由n掺杂硅组成的层或衬底中产生有孔开口或沟槽的蚀刻方法
公开(公告)号：US4874484A
公开(公告)日：1989-10-17
申请号：US193760
申请日：1988-05-13
申请人： Helmut Foell , Volker Lehmann
发明人： Helmut Foell , Volker Lehmann
IPC分类号： H01L21/3063 , H01L29/10 , H01L29/739 , H01L29/744 , H01L29/92 , H01L29/93
CPC分类号： H01L29/744 , H01L21/3063 , H01L29/102 , H01L29/1066 , H01L29/7392 , H01L29/92 , H01L29/93
摘要： The present invention provides the production of apertured openings or trenches in layers or substrates composed of n-doped silicon proceeding in an electrolytic way, whereby the silicon is connected as a positively polarized electrode of an electrolysis cell containing an agent that contains hydrofluoric acid. Hole structures having highly variable cross-section can be reproducibly manufactured with the method of the invention and holes can be localized by prescribing nuclei. The invention can be used in the manufacture of trench cells in memory modules, insulating trenches in LSI semiconductor circuits, large-area capacitors (varicaps), and in contacting more deeply disposed layers in disconnectable and voltage-controlled thyristors.
摘要翻译：本发明提供了以电解方式制造由n掺杂硅组成的层或衬底的有孔开口或沟槽，由此将硅作为包含含有氢氟酸的试剂的电解槽的正极化电极连接。具有高度可变横截面的孔结构可以通过本发明的方法重现地制造，并且可以通过处方核来定位孔。本发明可用于制造存储器模块中的沟槽电池，LSI半导体电路中的绝缘沟槽，大面积电容器（变容片）以及在可分离和压控晶闸管中更深层设置的层。

68. 发明授权

US08178966B2 Integrated coolant circuit arrangement, operating method and production method 有权
标题翻译：集成冷却液回路装置，操作方法及生产方法
公开(公告)号：US08178966B2
公开(公告)日：2012-05-15
申请号：US12940713
申请日：2010-11-05
申请人： Volker Lehmann , Reinhard Stengl , Herbert Schäfer
发明人： Volker Lehmann , Reinhard Stengl , Herbert Schäfer
IPC分类号： H01L21/36
CPC分类号： H01L23/473 , H01L21/30604 , H01L21/3063 , H01L23/427 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： An integrated circuit arrangement and method of fabricating the integrated circuit arrangement is provided. At least one integrated electronic component is arranged at a main area of a substrate. The component is arranged in the substrate or is isolated from the substrate by an electrically insulating region. Main channels are formed in the substrate and arranged along the main area. Each main channel is completely surrounded by the substrate transversely with respect to a longitudinal axis. Transverse channels are arranged transversely with respect to the main channels. Each transverse channel opens into at least one main channel. More than about ten transverse channels open into a main channel.
摘要翻译：提供一种集成电路装置及其制造方法。至少一个集成电子部件布置在基板的主要区域。该部件布置在基板中，或者通过电绝缘区域与基板隔离。主通道形成在基板上并且沿着主区域布置。每个主通道相对于纵向轴线横向地完全被基底包围。横向通道相对于主通道横向布置。每个横向通道打开至少一个主通道。超过十个横向通道进入主通道。

69. 发明申请

US20110297648A1 HIGH-VOLTAGE POWER SWITCH HAVING A CONTACT GAP EQUIPPED WITH SWITCHING GAS DEFLECTION ELEMENTS 有权
标题翻译：具有切换气体偏移元件的接触片的高压开关
公开(公告)号：US20110297648A1
公开(公告)日：2011-12-08
申请号：US13201230
申请日：2010-01-22
申请人： Hold Dienemann , Volker Lehmann , Manfred Meinherz
发明人： Hold Dienemann , Volker Lehmann , Manfred Meinherz
IPC分类号： H01H33/04
CPC分类号： H01H33/703 , H01H33/901 , H01H2033/888
摘要： A switching device assembly with a contact gap has a nozzle made of insulating material. The nozzle made of insulating material is formed with a nozzle channel that ends in a hot gas space. A deflector element is arranged within the hot gas space. The deflector element is supported inside the deflector channel.
摘要翻译：具有接触间隙的开关装置组件具有由绝缘材料制成的喷嘴。由绝缘材料制成的喷嘴形成有在热气体空间中结束的喷嘴通道。偏转元件设置在热气体空间内。偏转器元件支撑在偏转器通道内。

70. 发明授权

US07872349B2 Integrated coolant circuit arrangement, operating method and production method 有权
标题翻译：集成冷却液回路装置，操作方法及生产方法
公开(公告)号：US07872349B2
公开(公告)日：2011-01-18
申请号：US11324789
申请日：2006-01-03
申请人： Volker Lehmann , Reinhard Stengl , Herbert Schaefer
发明人： Volker Lehmann , Reinhard Stengl , Herbert Schaefer
IPC分类号： H01L23/473
CPC分类号： H01L23/473 , H01L21/30604 , H01L21/3063 , H01L23/427 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： An integrated circuit arrangement and method of fabricating the integrated circuit arrangement is provided. At least one integrated electronic component is arranged at a main area of a substrate. The component is arranged in the substrate or is isolated from the substrate by an electrically insulating region. Main channels are formed in the substrate and arranged along the main area. Each main channel is completely surrounded by the substrate transversely with respect to a longitudinal axis. Transverse channels are arranged transversely with respect to the main channels. Each transverse channel opens into at least one main channel. More than about ten transverse channels open into a main channel.
摘要翻译：提供一种集成电路装置及其制造方法。至少一个集成电子部件布置在基板的主要区域。该部件布置在基板中，或者通过电绝缘区域与基板隔离。主通道形成在基板上并且沿着主区域布置。每个主通道相对于纵向轴线横向地完全被基底包围。横向通道相对于主通道横向布置。每个横向通道打开至少一个主通道。超过十个横向通道进入主通道。

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