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61. 发明授权

US5631494A Power semiconductor device with low on-state voltage 失效
标题翻译：具有低导通电压的功率半导体器件
公开(公告)号：US5631494A
公开(公告)日：1997-05-20
申请号：US308292
申请日：1994-09-19
申请人： Naoki Sakurai , Yoshitaka Sugawara
发明人： Naoki Sakurai , Yoshitaka Sugawara
IPC分类号： H01L29/74 , H01L27/02 , H01L27/04 , H01L27/06 , H01L29/06 , H01L29/739 , H01L29/745 , H01L29/749 , H01L29/78 , H03K17/082 , H01L27/082 , H01L29/00
CPC分类号： H03K17/0828 , H01L27/0248 , H01L27/0251 , H01L29/0696 , H01L29/7395 , H01L29/7455
摘要： A circuit connecting a sub-IGBT element S.sub.2 having a smaller current capacity and a smaller saturated current than the main IGBT element S.sub.1 and a resistance R.sub.1 in series is connected to the main IGBT element S.sub.1 in parallel, a MOSFET element S.sub.3 being connected between the gate electrode of the sub-IGBT element S.sub.2 and the emitter electrode of the main IGBT element S.sub.1, a delay element being connected between the gate electrode of the sub-IGBT element S.sub.2 and the gate electrode of the main IGBT element S.sub.1. In normal operation, the ON-state voltage is small and low loss can be realized. In the event of a short-circuit accident, the sub-IGBT element S.sub.2 detects the short-circuit before the main IGBT element S.sub.1 turns on to prevent an over-current from flowing in the main IGBT element S.sub.1, which substantially improves the short-circuit resistivity of the semiconductor device.
摘要翻译：连接主IGBT元件S1并联连接具有比主IGBT元件S1小的饱和电流的次IGBT元件S2和串联的电阻R1的电路并联连接到主IGBT元件S1，MOSFET元件S3连接在子IGBT元件S2的栅电极和主IGBT元件S1的发射电极，延迟元件连接在子IGBT元件S2的栅电极和主IGBT元件S1的栅电极之间。正常工作时，导通电压小，可实现低损耗。在发生短路事故的情况下，副IGBT元件S2在主IGBT元件S1导通之前检测短路，以防止主IGBT元件S1中的过电流流动，这大大改善了短路，半导体器件的电路电阻率。

62. 发明授权

US4794441A Semiconductor switch circuit 失效
标题翻译：半导体开关电路
公开(公告)号：US4794441A
公开(公告)日：1988-12-27
申请号：US748199
申请日：1985-06-24
申请人： Yoshitaka Sugawara , Junjiro Kitano , Tadakatsu Kimura , Yasunobu Inabe , Masa-aki Tanabe
发明人： Yoshitaka Sugawara , Junjiro Kitano , Tadakatsu Kimura , Yasunobu Inabe , Masa-aki Tanabe
IPC分类号： H03K17/567 , H01L29/74 , H01L27/02 , H01L29/747 , H01L29/78
CPC分类号： H03K17/567
摘要： A semiconductor switch circuit of field-drive type includes a bipolar component having forward blocking and reverse blocking junctions, and p-channel and n-channel IGPETS connected across the bipolar component so as to short-circuit its forward blocking junction. The switch circuit operates to turn on or off in response to the voltage signal to the gate circuit which is isolated from the bipolar component, irrespective of the polarity of a voltage applied across the bipolar component.

63. 发明授权

US4100562A Light coupled semiconductor device and method of manufacturing the same 失效
标题翻译：光耦合半导体器件及其制造方法
公开(公告)号：US4100562A
公开(公告)日：1978-07-11
申请号：US678171
申请日：1976-04-19
申请人： Yoshitaka Sugawara , Tsutomu Yatsuo , Nobutake Konishi
发明人： Yoshitaka Sugawara , Tsutomu Yatsuo , Nobutake Konishi
IPC分类号： H01L31/111 , G02B6/42 , H01L31/12 , H01L31/167
CPC分类号： G02B6/4295 , G02B6/4212 , G02B6/4248 , H01L31/167 , H01L2224/45144 , H01L2224/48227 , H01L2224/73265 , H01L2924/1301
摘要： A light emitting semiconductor device and a light detecting semiconductor device are coupled optically with each other through a light guide. The light guide is made of a single piece of light transmissible insulating material and at least its end portion associated with the semiconductor light detector is brought into wet contact with a light sensing region of the semiconductor light detector including its neighboring area. While being in fluid state, the light transmissible insulator held in wet contact with the semiconductor light emitter and detector is shaped into a predetermined configuration and thereafter hardened to form the light guide.
摘要翻译：发光半导体器件和光检测半导体器件通过光导彼此光学耦合。光导由单片透光绝缘材料制成，并且至少其与半导体光检测器相关联的端部与包括其相邻区域的半导体光检测器的光感测区域湿式接触。在处于流体状态时，保持与半导体光发射器和检测器湿接触的透光性绝缘体成形为预定构造，然后硬化以形成光导。

64. 发明申请

US20130092978A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130092978A1
公开(公告)日：2013-04-18
申请号：US13651973
申请日：2012-10-15
申请人： FUJI ELECTRIC CO., LTD. , Yoshitaka Sugawara
发明人： Yoshitaka Sugawara , Nobuyuki Takahashi
IPC分类号： H01L29/739
CPC分类号： H01L29/0834 , H01L29/1608 , H01L29/7395 , H01L29/7397
摘要： A semiconductor device includes a semiconductor layer of a first conductor type; a first semiconductor layer of a second conductor type, on the front of the semiconductor layer; a second semiconductor layer of the second conductor type, on the first semiconductor layer and having a higher impurity concentration than the first semiconductor layer; a third semiconductor layer of the second conductor type, on the second semiconductor layer and having a lower impurity concentration than the second semiconductor layer; a first semiconductor region of the first conductor type, in a surface layer of the third semiconductor layer; a second semiconductor region of the second conductor type, in a surface layer of the first semiconductor region; an input electrode contacting the second semiconductor region; a control electrode disposed above part of the first semiconductor region with an insulating film therebetween; and an output electrode disposed on the back of the semiconductor layer.
摘要翻译：半导体器件包括第一导体类型的半导体层; 第二导体类型的第一半导体层，位于半导体层的前面; 第二导体类型的第二半导体层，在第一半导体层上并且具有比第一半导体层更高的杂质浓度; 第二导体类型的第三半导体层，在第二半导体层上并且具有比第二半导体层低的杂质浓度; 第一导体类型的第一半导体区域，位于第三半导体层的表面层中; 在所述第一半导体区域的表面层中的所述第二导体类型的第二半导体区域; 与第二半导体区域接触的输入电极; 控制电极，其设置在所述第一半导体区域的一部分之上，其间具有绝缘膜; 以及设置在半导体层背面的输出电极。

65. 发明授权

US08003736B2 Silicon-containing compound, curable composition and cured product 失效
标题翻译：含硅化合物，固化性组合物和固化物
公开(公告)号：US08003736B2
公开(公告)日：2011-08-23
申请号：US12596933
申请日：2008-04-21
申请人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Seiichi Saito , Yoshitaka Sugawara
发明人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Seiichi Saito , Yoshitaka Sugawara
IPC分类号： C08F283/00
CPC分类号： C08G77/50 , C08L83/14 , C08L83/00
摘要： A silicon-containing compound of formula (1), and a curing composition containing a silicon-containing compound of formula (1) wherein Z is hydrogen, a silicon-containing compound of formula (1) wherein Z is C2-C4 alkenyl or alkynyl and a hydrosilylation catalyst. The composition has excellent handling and curing properties and provides a cured product with excellent heat resistance and flexibility. In formula (1), Ra-Rg=C1-C12 saturated aliphatic hydrocarbon group or C6-C12 aromatic hydrocarbon group. Re and Rf do not simultaneously represent C1-C12 saturated aliphatic hydrocarbon group; Y=C2-C4 alkylene; Z=hydrogen or C2-C4 alkenyl or alkynyl; K is 2-7; T is 1-7; P is 0-3; and M and N are numbers selected such that N:M=1:1 to 1:100, that all M's and N's total at least 15, and that the mass average molecular weight of the compound of formula (1) is 3,000 to 1,000,000.
摘要翻译：一种式（1）的含硅化合物和含有其中Z是氢的式（1）的含硅化合物的固化组合物，其中Z是C 2 -C 4烯基或炔基的式（1）的含硅化合物和氢化硅烷化催化剂。该组合物具有优异的处理和固化性能，并提供具有优异的耐热性和柔韧性的固化产物。在式（1）中，Ra-Rg = C1-C12饱和脂族烃基或C6-C12芳族烃基。 Re和Rf不同时代表C1-C12饱和脂族烃基; Y = C2-C4亚烷基; Z =氢或C 2 -C 4烯基或炔基; K为2-7; T为1-7; P为0-3; 并且M和N是选择为N:M = 1:1至1:100的数字，所有M和N的总数至少为15，并且式（1）化合物的质均分子量为3,000至1,000,000 。

66. 发明授权

US07939614B2 Silicon-containing curing composition and heat cured product thereof 有权
标题翻译：含硅固化性组合物以及它们的热固化产物
公开(公告)号：US07939614B2
公开(公告)日：2011-05-10
申请号：US10594221
申请日：2005-05-10
申请人： Takashi Sueyoshi , Ken-Ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Yoshitaka Sugawara
发明人： Takashi Sueyoshi , Ken-Ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Yoshitaka Sugawara
IPC分类号： C08G77/04 , C08G77/12 , C08G77/14 , C08G77/20
CPC分类号： C08L83/04 , C08G77/12 , C08G77/14 , C08G77/18 , C08G77/20 , C08G77/70 , C08L83/00
摘要： A curable composition which comprises at least one of the following (A), (B), and (C) and further contains (D) (provided that when (C) is not contained, both (A) and (B) are in the composition. (A): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′ and one or more Si—O—Si bonds. (B): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has an Si—H group and one or more Si—O—Si bonds. (C): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′, an Si—H group, and one or more Si—O—Si bonds. (D): A catalyst for curing reaction which is a platinum catalyst. The reactive group A′ is any of Si—R1, Si—O—R2, and Si—R3—OCOC(R4)═CH2, provided that R1 and R2 each is alkenyl, R3 is alkylene and/or arylene, and R4 is hydrogen or methyl.
摘要翻译：一种可固化的组合物，其包含以下的（A）中的至少一种，（B），和（C），还含有（D）（条件是当（C）不包含，无论（A）和（B）是在该组合物（A）：含硅聚合物，其中具有1,000或更低的重均分子量成分的含量为20重量％或更低，其中有一个反应性基团A'和一个或多个SI- O-Si键（B）：A含硅聚合物，其中具有1,000或更低的重均分子量成分的含量为20重量％或更低，其具有Si-H基和一个或多个 Si-O-Si键（C）：其中重均分子量为1,000以下的成分的含量为20重量％以下且具有反应性基团A'的含硅聚合物， Si-H基和一个或多个Si-O-Si键;（D）：作为铂催化剂的用于固化反应的催化剂，反应性基团A'是Si-R 1，Si-O-R 2和的Si-R3 OCOC（R 4）═CH2，条件是R1和R2各自是链烯基，R 3是亚烷基和/或亚芳基，并且R 4是氢或甲基。

67. 发明申请

US20100150202A1 METHOD FOR MEASURING TEMPERATURE OF SEMICONDUCTOR DEVICE AND APPARATUS FOR MEASURING TEMPERATURE OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于测量半导体器件温度的方法和测量半导体器件温度的装置
公开(公告)号：US20100150202A1
公开(公告)日：2010-06-17
申请号：US12088270
申请日：2006-09-28
申请人： Katsunori Asano , Yoshitaka Sugawara
发明人： Katsunori Asano , Yoshitaka Sugawara
IPC分类号： G01N25/18 , G01K3/00
CPC分类号： G01K7/01 , G01K7/346
摘要： In the temperature measurement method for semiconductor devices, a junction temperature of a SiC GTO is determined by exploiting large temperature dependence of accumulation time ts as turn-OFF characteristic time of the SiC GTO that is a semiconductor switching element. The accumulation time ts is a time duration lasting from rise start time t1 of a gate turn-OFF current Ig until decay start time t2 of an anode current Ia. In this temperature measurement method, measured turn-OFF characteristic time is converted into a junction temperature of the SiC GTO based on relational characteristics between preliminarily measured accumulation time ts and junction temperatures.
摘要翻译：在半导体器件的温度测量方法中，通过利用作为半导体开关元件的SiC GTO的截止特征时间的累积时间ts的大的温度依赖性来确定SiC GTO的结温。累积时间ts是从栅极截止电流Ig的上升开始时刻t1到阳极电流Ia的衰减开始时间t2持续的持续时间。在该温度测量方法中，基于预先测量的累积时间ts和结温之间的关系特性，将测量的截止特征时间转换为SiC GTO的结温。

68. 发明授权

US07626232B2 Voltage-controlled semiconductor device 失效
标题翻译：压控半导体器件
公开(公告)号：US07626232B2
公开(公告)日：2009-12-01
申请号：US10593878
申请日：2005-03-17
申请人： Katsunori Asano , Yoshitaka Sugawara
发明人： Katsunori Asano , Yoshitaka Sugawara
IPC分类号： H01L29/94
CPC分类号： H01L29/1095 , H01L29/0623 , H01L29/7391 , H01L29/7395
摘要： SiC-IGBTs, which have an inversion-type channel with high channel resistance and have high on-voltage due to an influence from the surface state of the interface between a gate insulating film and a base layer, are required to decrease the on-voltage.An embedded collector region is partially formed in a base layer which is formed on an emitter layer of a SiC semiconductor. A channel layer is formed on the base layer and the embedded collector region to constitute an accumulation-type channel. Consequently, at on time, holes are accumulated in the upper layer portion of the channel layer so that a low-resistant channel is formed. Current by the holes flows to the emitter layer through a channel from the collector region and becomes a base current for an npn transistor composed of the embedded collector region, the base region and the emitter region.
摘要翻译：需要具有高通道电阻的反型通道和由于栅极绝缘膜和基极层之间的界面的表面状态的影响而具有高导通电压的SiC-IGBT，以降低导通电压。嵌入式集电极区域部分地形成在形成在SiC半导体的发射极层上的基极层中。沟道层形成在基极层和嵌入的集电极区域上，构成积聚型沟道。因此，在时间上，在沟道层的上层部分积聚有孔，从而形成低阻抗沟道。这些空穴的电流通过来自集电极区域的沟道流到发射极层，成为由嵌入式集电极区域，基极区域和发射极区域构成的npn晶体管的基极电流。

69. 发明授权

US07470960B1 High-voltage power semiconductor device with body regions of alternating conductivity and decreasing thickness 失效
标题翻译：高压功率半导体器件具有交替导电性和厚度减小的体区
公开(公告)号：US07470960B1
公开(公告)日：2008-12-30
申请号：US10111625
申请日：2000-10-24
申请人： Yoshitaka Sugawara
发明人： Yoshitaka Sugawara
IPC分类号： H01L29/08
CPC分类号： H01L29/7825 , H01L29/0634 , H01L29/1095 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/22 , H01L29/267 , H01L29/41716 , H01L29/41725 , H01L29/41766 , H01L29/42368 , H01L29/7393 , H01L29/7394 , H01L29/7436 , H01L29/744 , H01L29/749 , H01L29/7809 , H01L29/7816
摘要： A semiconductor device which eases an electric field at a drift portion without a reduction in impurity concentrations, and has a high withstand voltage and a low on-resistance, wherein, when a rated voltage is applied between a body region and a drain region formed on an insulating semiconductor substrate, the thicknesses of two, p-type and n-type, drift regions sandwiched between the body and drain regions are selected so as to completely deplete the drift regions.
摘要翻译：一种半导体器件，其在漂移部分缓和电场而不会降低杂质浓度，并且具有高的耐受电压和低导通电阻，其中当在形成于其上的体区和漏区之间施加额定电压时绝缘半导体衬底，选择夹在体区和漏区之间的两个p型和n型漂移区的厚度，以便完全耗尽漂移区。

70. 发明授权

US07462888B2 Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device 失效
标题翻译：半导体装置及其制造方法以及并入该半导体装置的电力转换装置
公开(公告)号：US07462888B2
公开(公告)日：2008-12-09
申请号：US11855138
申请日：2007-09-13
申请人： Yoshitaka Sugawara
发明人： Yoshitaka Sugawara
IPC分类号： H01L29/74
CPC分类号： H01L29/8613 , H01L23/045 , H01L23/34 , H01L23/345 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L29/0619 , H01L29/1608 , H01L29/2003 , H01L29/744 , H01L2224/04042 , H01L2224/05556 , H01L2224/05599 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/4823 , H01L2224/48465 , H01L2224/48599 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/73265 , H01L2224/85399 , H01L2224/8592 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01031 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/10157 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12043 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/15312 , H01L2924/16152 , H01L2924/181 , H01L2924/19107 , H01L2924/20758 , H01L2924/3025 , H01L2924/00 , H01L2924/00012
摘要： The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable current and low in loss. The temperature is set at a temperature higher than the temperature at which the decrement of the steady loss of the wide-gap bipolar semiconductor element corresponding to the decrement of the built-in voltage lowering depending on the temperature rising of the wide-gap bipolar semiconductor element is larger than the increment of the steady loss corresponding to the increment of the ON resistance increasing depending on the temperature rising.
摘要翻译：使用诸如加热器的加热装置提高使用宽间隙半导体的双极性半导体元件的温度，以获得可控电流大且损耗小的功率半导体器件。温度设定为高于宽间隙双极性半导体元件的稳定损耗的减少对应于内置电压降低的减小的温度的温度，这取决于宽间隙双极型半导体的升温元素大于对应于根据升温升高的导通电阻增加的稳定损耗的增量。

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