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61. 发明授权

US07041529B2 Light-emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07041529B2
公开(公告)日：2006-05-09
申请号：US10690453
申请日：2003-10-22
申请人： Masato Yamada , Jun-ya Ishizaki , Nobuhiko Noto , Kazunori Hagimoto , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Masato Yamada , Jun-ya Ishizaki , Nobuhiko Noto , Kazunori Hagimoto , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L21/00 , H01L21/30
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/10 , H01L33/145 , H01L33/387 , H01L33/405 , H01L2933/0016
摘要： In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.
摘要翻译：在发光装置中，将由化合物半导体构成的发光层部分接合在透明导电半导体衬底的一个主表面上，同时将由导电氧化物构成的衬底接合导电氧化物层放置在其间。在发光层部分和与衬底结合的导电氧化物层之间，具有用于与衬底结合导电氧化物层降低结电阻以与衬底结合导电氧化物层接触的接触层。这是成功地提供了可以低成本生产的低发光装置，具有低串联电阻，并且尽管具有厚的电流扩展层，但是可以获得足够的发光效率。

62. 发明申请

US20050285127A1 Method of fabricating light-emitting device and light-emitting device 有权
标题翻译：制造发光器件和发光器件的方法
公开(公告)号：US20050285127A1
公开(公告)日：2005-12-29
申请号：US10523636
申请日：2003-08-06
申请人： Nobuhiko Noto , Masato Yamada , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Nobuhiko Noto , Masato Yamada , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L33/10 , H01L33/30 , H01L33/36 , H01L29/20 , H01L21/00
CPC分类号： H01L33/42 , H01L33/30
摘要： A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section 24 and the ITO transparent electrode layers 8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers 7, 9 are formed by annealing a stack 13 obtained by forming GaAs layers 7′, 9′ on the light-emitting layer section, and by forming the ITO transparent electrode layers 8, 10 so as to contact with the GaAs layers 7′, 9′, to thereby allow In to diffuse from the ITO transparent electrode layers 8, 10 into the GaAs layers 7′, 9′. This provides a method of fabricating a light-emitting device, in which the ITO transparent electrode layers as the light-emission drive electrodes are bonded as being underlain by the contact layers, to thereby reduce contact resistance of these electrodes, and to thereby make the contact layers less susceptible to difference in the lattice constants with those of the light-emitting layer section during the formation thereof.
摘要翻译：发光装置100具有用于向发光层部分24施加用于发光的驱动电压的ITO透明电极层8,10，并且被设计成从发光层部分24通过 ITO透明电极层8,10。发光装置100还具有形成在发光层部24和ITO透明电极层8,10之间的含有In的GaAs的接触层，以分别与ITO透明电极层接触。接触层7,9通过在发光层部分上形成GaAs层7'，9'而获得的叠层13退火并通过形成ITO透明电极层8,10而与GaAs层接触而形成 7'，9'，从而允许In从ITO透明电极层8,10扩散到GaAs层7'，9'中。这提供了一种制造发光器件的方法，其中作为发光驱动电极的ITO透明电极层被接触层接合，从而降低这些电极的接触电阻，从而使接触层在其形成期间不太容易发生与发光层部分的晶格常数的差异。

63. 发明授权

US06759689B2 Light emitting element and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US06759689B2
公开(公告)日：2004-07-06
申请号：US10213081
申请日：2002-08-07
申请人： Keizo Adomi , Masanobu Takahashi , Nobuhiko Noto
发明人： Keizo Adomi , Masanobu Takahashi , Nobuhiko Noto
IPC分类号： H01L3300
CPC分类号： H01L33/0079 , H01L33/12 , H01L33/405
摘要： A metal layer 3, a light emitting layer section 4 and a first electrode 5 are formed in the order on a first main surface 7 side of a conductive substrate 2 and a current is supplied to the light emitting layer section 4 through the first electrode 5 and the conductive substrate 2. By using reflection on the metal layer 3, not only can good external quantum efficiency be realized, but electrodes or terminals can also be formed on both sides of the light emitting element. Thus, provided is a light emitting element excellent in external quantum efficiency thereof and in addition, not only simple in structure of a terminal lead thereof but excellent in convenience.
摘要翻译：在导电性基板2的第一主面7侧依次形成金属层3，发光层部4和第一电极5，并且通过第一电极5向发光层部4供给电流和导电基板2.通过在金属层3上使用反射，不仅可以实现良好的外部量子效率，而且可以在发光元件的两侧形成电极或端子。因此，提供了其外部量子效率优异的发光元件，此外，不仅其端子引线的结构简单，而且方便性优异。

64. 发明授权

US5739553A Algainp light-emitting device 失效
标题翻译：阿根廷发光装置
公开(公告)号：US5739553A
公开(公告)日：1998-04-14
申请号：US577961
申请日：1995-12-26
申请人： Nobuhiko Noto , Keizo Adomi , Takao Takenaka
发明人： Nobuhiko Noto , Keizo Adomi , Takao Takenaka
IPC分类号： H01L33/14 , H01L33/30 , H01L33/00
CPC分类号： H01L33/30 , H01L33/14
摘要： The present invention provides an AlGaInP light-emitting device with a longer life and higher reliability. The AlGaInP light-emitting device comprises an n-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), an (Al.sub.0.15 Ga.sub.0.85).sub.0.51 In.sub.0.49 P active layer (about 0.6 .mu.m in thickness), a p-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), and a p-type current-spreading layer composed of either a p-type Al.sub.0.7 Ga.sub.0.3 As layer (about 3 .mu.m in thickness) or a p-type Al.sub.0.7 Ga.sub.0.3 As.sub.0.97 P.sub.0.03 layer (about 3 .mu.m in thickness) and a p-type GaAs.sub.0.5 P.sub.0.5 layer (about 7 .mu.m in thickness), in sequence formed on an n-type GaAs substrate, and further an upper surface electrode mounted on the p-type GaAs.sub.0.5 P.sub.0.5 layer and a lower surface electrode mounted on the lower surface of the n-type GaAs substrate.
摘要翻译：本发明提供一种具有更长寿命和更高可靠性的AlGaInP发光器件。 AlGaInP发光器件包括n型（Al0.7Ga0.3）0.51In0.49P包层（厚度约1μm），（Al0.15Ga0.85）0.51In0.49P有源层（约0.6 厚度为1μm），p型（Al0.7Ga0.3）0.51In0.49P包层（厚度约1μm）以及由p型Al0构成的p型电流扩展层。（厚约3μm）或p型Al0.7Ga0.3As0.97P0.03层（约3μm厚）和p型GaAs0.5P0.5层（约7μm） m），依次形成在n型GaAs衬底上，另外安装在p型GaAs0.5P0.5层上的上表面电极和安装在n型GaAs的下表面上的下表面电极基质。

65. 发明授权

US5444269A AlGaInP light emitting device 失效
标题翻译： AlGaInP发光器件
公开(公告)号：US5444269A
公开(公告)日：1995-08-22
申请号：US251370
申请日：1994-05-31
申请人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
发明人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
IPC分类号： H01L33/14 , H01L33/30 , H01L33/00
CPC分类号： H01L33/14
摘要： An AlGaInP double heterojunction structure or an AlGaInP single heterojunction structure is formed on a first conductivity-type GaAs substrate, and then a layer made of a second conductivity-type Al.sub.w Ga.sub.1-w As.sub.1-v P.sub.v mixed crystal (Al.sub.0.7 Ga.sub.0.3 As.sub.0.97 P.sub.0.03, for example) which has the bandgap energy larger than the energy of photon emitted from the active layer of said light emitting layer portion, and has good lattice-matching with (Al.sub.B Ga.sub.1-B).sub.0.51 In.sub.0.49 P mixed crystal (layer) constituting said light emitting layer portion, is formed as a current spreading layer on top of said light emitting layer portion. Here, w and v are in the range of 0.45.ltoreq.w
摘要翻译：在第一导电型GaAs衬底上形成AlGaInP双异质结结构或AlGaInP单异质结结构，然后形成由第二导电型AlwGa1-wAs1-vPv混晶（Al0.7Ga0.3As0.97P0.03 具有比从所述发光层部分的有源层发射的光子能量大的带隙能量，并且与构成所述发光层部分的（AlBGa1-B）0.51In0.49P混晶（层）具有良好的晶格匹配发光层部分形成为在所述发光层部分的顶部上的电流扩散层。这里，w和v分别在0.45

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