专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US08115184B2 Gas field ion source, charged particle microscope, and apparatus 有权
标题翻译：气体离子源，带电粒子显微镜和装置
公开(公告)号：US08115184B2
公开(公告)日：2012-02-14
申请号：US12318583
申请日：2008-12-31
申请人： Hiroyasu Shichi , Shinichi Matsubara , Takashi Ohshima , Satoshi Tomimatsu , Tomihiro Hashizume , Tohru Ishitani
发明人： Hiroyasu Shichi , Shinichi Matsubara , Takashi Ohshima , Satoshi Tomimatsu , Tomihiro Hashizume , Tohru Ishitani
IPC分类号： H01J49/00
CPC分类号： H01J27/26 , H01J37/08 , H01J2237/0805 , H01J2237/0807 , H01J2237/182
摘要： A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.
摘要翻译：一种气体离子源，其可以在粗吸真空中同时增加电导，并且从离子电流的增加的角度降低提取电极的孔直径。气体离子源具有改变真空气体分子离子化室中的电导的机理。也就是说，根据是否从气体分子离子化室抽出离子束，改变对气体分子离子化室进行抽真空的电导。通过将盖子形成为构成用双金属合金改变电导的机构的部件的部分，可以根据气体分子离子化室的温度来改变电导率，例如，电导率变为相对较小的电导率相对较低的温度和相对高的温度下的相对较大的电导率。

62. 发明授权

US07947964B2 Charged particle beam orbit corrector and charged particle beam apparatus 有权
标题翻译：带电粒子束轨道校正器和带电粒子束装置
公开(公告)号：US07947964B2
公开(公告)日：2011-05-24
申请号：US11943241
申请日：2007-11-20
申请人： Hiroyuki Ito , Yuko Sasaki , Tohru Ishitani , Yoshinori Nakayama
发明人： Hiroyuki Ito , Yuko Sasaki , Tohru Ishitani , Yoshinori Nakayama
IPC分类号： G21K1/087
CPC分类号： H01J37/141 , H01J37/09 , H01J37/12 , H01J37/153 , H01J37/28 , H01J2237/142 , H01J2237/1534 , H01J2237/303
摘要： The present invention relates to an orbit correction method for a charged particle beam, and aims to solve problems inherent in conventional aberration correction systems and to provide a low-cost, high-precision, high-resolution optical converging system for a charged particle beam. To this end, employed is a configuration in which a beam orbit is limited in ring zone form to form a distribution of electromagnetic field converging toward the center of a beam orbit axis. Consequently, a nonlinear action outwardly augmented, typified by spherical aberration of an electron lens, can be cancelled out. Specifically, this effect can be achieved by an electron disposed on the axis and subjected to a voltage to facilitate the occurrence of electrostatic focusing. For a magnetic field, this effect can be achieved by forming a coil radially distributed-wound on a surface equiangularly divided in the direction of rotation to control convergence of a magnetic flux density.
摘要翻译：本发明涉及一种用于带电粒子束的轨道校正方法，其目的在于解决常规像差校正系统中固有的问题，并提供一种用于带电粒子束的低成本，高精度，高分辨率的聚光系统。为此，所采用的是波束轨道受环形形式限制以形成朝向光束轨道中心收敛的电磁场分布的结构。因此，可以抵消以电子透镜的球面像差为代表的向外扩大的非线性动作。具体地说，这种效果可以通过设置在轴上的电子元件实现，并且经受电压以便于静电聚焦的发生。对于磁场，这种效果可以通过在旋转方向上等角地分割的表面上形成径向分布缠绕的线圈来实现，以控制磁通密度的收敛。

63. 发明授权

US07550740B2 Focused ION beam apparatus 有权
标题翻译：聚焦光束装置
公开(公告)号：US07550740B2
公开(公告)日：2009-06-23
申请号：US11828714
申请日：2007-07-26
申请人： Koichiro Takeuchi , Tohru Ishitani
发明人： Koichiro Takeuchi , Tohru Ishitani
IPC分类号： G21K1/093 , H01J29/58 , H01J29/64 , H01J37/21
CPC分类号： H01J37/3056 , H01J37/09 , H01J37/1471 , H01J2237/31745 , H01J2237/31749
摘要： A focused ion beam apparatus enables an ion beam to be focused highly accurately on a sample at the beam spot position of the case of the absence of magnetic field without causing isotope separation of the ion beam on the sample, even when there is a magnetic field on the ion beam optical axis or the magnetic field fluctuates. The focused ion beam apparatus comprises a corrective magnetic field generating unit 10 disposed on the optical axis of the ion beam 3 for correcting the deflection of the ion beam 3 due to an external magnetic field. The corrective magnetic field generating unit 10 includes pole-piece pairs 26A and 26B, each of which having two pole pieces 26a and 26b or 26c and 26d that are adjacent to each other with a gap d. The pole-piece pairs 26A and 26B are disposed opposite to each other with a gap g (>d) across the optical axis of the ion beam 3. Each of the pole pieces 26a to 26d is wound with an internal coil 29, and the pole-piece pairs 26A and 26B are each wound with an external coil 30 in such a manner as to surround the internal coils 29.
摘要翻译：聚焦离子束装置使得离子束能够在不存在磁场的情况下的光束位置处的样品上高精度地聚焦，而不会导致样品上的离子束同位素分离，即使存在磁场在离子束光轴上或磁场波动。聚焦离子束装置包括设置在离子束3的光轴上的校正磁场产生单元10，用于校正由外部磁场引起的离子束3的偏转。校正磁场产生单元10包括极片对26A和26B，每个具有间隙d彼此相邻的两个极片26a和26b或26c和26d。极片对26A和26B彼此相对地设置有跨越离子束3的光轴的间隙g（> d）。每个极片26a至26d都缠绕有内部线圈29，并且极片对26A和26B分别以包围内部线圈29的方式缠绕有外部线圈30。

64. 发明申请

US20080210883A1 Liquid metal ion gun 有权
标题翻译：液态金属离子枪
公开(公告)号：US20080210883A1
公开(公告)日：2008-09-04
申请号：US12076481
申请日：2008-03-19
申请人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
发明人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
IPC分类号： G21G5/00
CPC分类号： H01J27/02 , H01J27/22 , H01J37/08 , H01J2237/0805
摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

65. 发明授权

US07301146B2 Probe driving method, and probe apparatus 有权
标题翻译：探头驱动方法和探头装置
公开(公告)号：US07301146B2
公开(公告)日：2007-11-27
申请号：US11201222
申请日：2005-08-11
申请人： Satoshi Tomimatsu , Hidemi Koike , Junzo Azuma , Tohru Ishitani , Aritoshi Sugimoto , Yuichi Hamamura , Isamu Sekihara , Akira Shimase
发明人： Satoshi Tomimatsu , Hidemi Koike , Junzo Azuma , Tohru Ishitani , Aritoshi Sugimoto , Yuichi Hamamura , Isamu Sekihara , Akira Shimase
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： G01Q10/06 , G01N23/04 , G01N23/225 , G01R31/2886 , G01R31/311 , H01J37/28
摘要： A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow (54) appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.
摘要翻译：探针驱动方法和探针装置，用于通过监测探针高度，以安全和有效的方式使探针与样品的表面接触。通过检测在探针接触样品之前出现的探针阴影（54），或者基于探针图像和样品图像的相对位置的变化，获得关于来自样品表面的探针的高度的信息，对角线照射离子束。

66. 发明授权

US07235798B2 Focused ion beam apparatus 有权
标题翻译：聚焦离子束装置
公开(公告)号：US07235798B2
公开(公告)日：2007-06-26
申请号：US11151425
申请日：2005-06-14
申请人： Tohru Ishitani , Hiroyuki Muto , Yuichi Madokoro
发明人： Tohru Ishitani , Hiroyuki Muto , Yuichi Madokoro
IPC分类号： G21K5/10
CPC分类号： H01J37/28 , H01J37/12 , H01J2237/04924 , H01J2237/121 , H01J2237/31749
摘要： In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical system the distance from an emitter apex in an ion source to an earth electrode included in a condenser lens and disposed nearest to the ion source is in the range of 5 to 14 mm.
摘要翻译：为了在MEMS和半导体器件的结构分析和故障分析中实现更快的高精度铣削和高分辨率图像观察，将双透镜光学系统安装在聚焦离子束装置上，并且在光学系统中距离离子源中的发射极顶点包括在聚光透镜中并且最靠近离子源设置的接地电极在5至14mm的范围内。

67. 发明授权

US07211805B2 Liquid metal ion gun 有权
标题翻译：液态金属离子枪
公开(公告)号：US07211805B2
公开(公告)日：2007-05-01
申请号：US11312367
申请日：2005-12-21
申请人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
发明人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
IPC分类号： H01J27/00 , G21G5/00 , G21K7/00
CPC分类号： H01J27/02 , H01J27/22 , H01J37/08 , H01J2237/0805
摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

68. 发明申请

US20070023651A1 Methods for sample preparation and observation, charged particle apparatus 有权
标题翻译：样品制备和观察方法，带电粒子装置
公开(公告)号：US20070023651A1
公开(公告)日：2007-02-01
申请号：US11482094
申请日：2006-07-07
申请人： Tohru Ishitani , Uki Kabasawa , Tsuyoshi Ohnishi
发明人： Tohru Ishitani , Uki Kabasawa , Tsuyoshi Ohnishi
IPC分类号： G01N23/00
CPC分类号： G01N23/225 , H01J37/3005 , H01J37/3056 , H01J2237/1536 , H01J2237/31745
摘要： In an SEM observation in a depth direction of a cross section processed by repeated FIB cross-sectioning and SEM observation to correct a deviation in an observation field of view and a deviation in focus, are corrected, the deviations occurring when a processed cross section moves in the depth direction thereof; information on a height and a tilt of a surface of cross section processing area is calculated before the processing, the above information is used, the deviation in a field of view and the deviation in focus in SEM observation, which correspond to an amount of movement of the cross section at a time of the processing, are predicted, and the SEM is controlled based on the predicted values.
摘要翻译：在通过重复的FIB横截面处理的横截面的深度方向的SEM观察和用于校正观察视场偏离和聚焦偏差的SEM观察中，校正了当处理的横截面移动时发生的偏差在其深度方向; 在处理之前计算关于横截面处理区域的表面的高度和倾斜的信息，使用上述信息，SEM视场中的偏差和对应于移动量的SEM观察中的偏差的预测值，并且根据预测值来控制SEM。

69. 发明授权

US06794663B2 Method and apparatus for specimen fabrication 有权
公开(公告)号：US06794663B2
公开(公告)日：2004-09-21
申请号：US10699853
申请日：2003-11-04
申请人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
发明人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
IPC分类号： G21G500
CPC分类号： G01N23/20 , B23K15/0006 , B23K15/0013 , G01N1/286 , H01J2237/3114 , H01J2237/31745
摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

70. 发明授权

US06734687B1 Apparatus for detecting defect in device and method of detecting defect 有权
标题翻译：用于检查装置缺陷的装置和检查缺陷的方法
公开(公告)号：US06734687B1
公开(公告)日：2004-05-11
申请号：US09936941
申请日：2001-12-04
申请人： Tohru Ishitani , Hidemi Koike , Aritoshi Sugimoto , Isamu Sekihara , Kaoru Umemura , Satoshi Tomimatsu , Junzo Azuma
发明人： Tohru Ishitani , Hidemi Koike , Aritoshi Sugimoto , Isamu Sekihara , Kaoru Umemura , Satoshi Tomimatsu , Junzo Azuma
IPC分类号： G01R31302
CPC分类号： G01R31/311 , G01R31/2851 , G01R31/303
摘要： Disconnection defects, short-circuit defects and the like in wiring patters of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).
摘要翻译：可以检查大尺寸芯片（20〜25mm的正方形）内的TEG内的亚微米尺寸（每个为1〜2.5mm的正方形）的接线图案中的断路缺陷，短路缺陷等。所有的TEG，具有良好的可操作性，高可靠性和高效率。用于通过机械接触对布线图案施加电压的导体探针由与样品台（16）的移动同步的同步型导体探针和相对固定于FIB发生器的固定型导体探针装置（21）组成， 10）。探针尖端的位置叠加到SIM图像上并显示在显示单元上（19）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式