专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20150140690A1 ETCHING METHOD FOR SEMICONDUCTOR PRODUCT 审中-公开
标题翻译：半导体产品蚀刻方法
公开(公告)号：US20150140690A1
公开(公告)日：2015-05-21
申请号：US14564227
申请日：2014-12-09
申请人： Takeshi Sakai , Tatsuro Yoshida , Kazuhiro Yoshikawa , Shigetoshi Sugawa
发明人： Takeshi Sakai , Tatsuro Yoshida , Kazuhiro Yoshikawa , Shigetoshi Sugawa
IPC分类号： H01L21/306 , H01L21/66
CPC分类号： H01L21/30604 , H01L21/6708 , H01L22/26 , H01L27/1464 , H01L27/14687
摘要： There is provided an etching method for a semiconductor product. The semiconductor product having, on a substrate, an SiO2 layer, and an Si layer with a free surface and directly stacked on the SiO2 layer is prepared. The Si layer is etched. Etching is performed while supplying an etching solution from a side of the free surface using high-concentration fluonitric acid as the etching solution, and etching is continued by switching to fluonitric acid having a concentration lower than that of the fluonitric acid immediately before or after at least part of a surface of the SiO2 layer immediately under the Si layer is exposed.
摘要翻译：提供了半导体产品的蚀刻方法。制备在衬底上具有SiO 2层和具有自由表面并直接层叠在SiO 2层上的Si层的半导体产品。 Si层被蚀刻。使用高浓度氟酸作为蚀刻溶液从自由表面侧供给蚀刻溶液进行蚀刻，并且在紧接着在之前或之后切换到浓度低于荧光酮浓度的氟硝酸继续蚀刻露出Si层正下方的SiO 2层表面的最少部分。

62. 发明授权

US08670082B2 Thin film transistor, display device and liquid crystal display device 有权
标题翻译：薄膜晶体管，显示装置和液晶显示装置
公开(公告)号：US08670082B2
公开(公告)日：2014-03-11
申请号：US13242283
申请日：2011-09-23
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
IPC分类号： G02F1/136 , H01L29/04
CPC分类号： H01L29/66765 , G02F1/136209 , H01L29/78633
摘要： A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.
摘要翻译：提供薄膜晶体管，显示装置和液晶显示装置。薄膜晶体管包括：栅极电极膜，其上照射有来自光源的光，通过绝缘膜形成在栅极电极膜上并且在与光源侧相反的一侧的半导体膜，第一和第二电极膜形成为与半导体膜电接触;以及第一屏蔽膜，其形成在与栅极电极膜相同的层中并与栅极电极膜电隔离，其中第一屏蔽膜与从该光看到的半导体膜的一部分重叠照射方向，并且从光照射方向观察，还与第一电极膜的至少一部分重叠。

63. 发明授权

US08310611B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08310611B2
公开(公告)日：2012-11-13
申请号：US12536066
申请日：2009-08-05
申请人： Takuo Kaitoh , Toshio Miyazawa , Takeshi Sakai
发明人： Takuo Kaitoh , Toshio Miyazawa , Takeshi Sakai
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , H01L27/124 , H01L29/458 , H01L29/78618
摘要： Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith.
摘要翻译：提供一种显示装置，包括：栅电极（GT）; 控制在源电极（ST）和漏电极（DT）之间流动的电流的半导体膜（S），所述半导体膜包括沟道区域和由夹着沟道区域的区域形成的两个杂质区域; 两个欧姆接触层（DS）插在源电极等和两个杂质区之间; 以及层叠在所述半导体膜的部分区域上的绝缘膜，所述部分区域围绕与所述半导体膜的大致中心对应的位置，其中：所述半导体膜由微晶硅和多晶硅中的一个形成; 在绝缘膜不存在的区域中形成两个杂质区域; 两个欧姆接触层覆盖其两个杂质区域; 源电极等覆盖欧姆接触层。

64. 发明授权

US08049255B2 Display device and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08049255B2
公开(公告)日：2011-11-01
申请号：US12155504
申请日：2008-06-05
申请人： Takeshi Sakai , Toshio Miyazawa , Takuo Kaitoh , Hidekazu Miyake
发明人： Takeshi Sakai , Toshio Miyazawa , Takuo Kaitoh , Hidekazu Miyake
IPC分类号： H01L31/062
CPC分类号： H01L27/1214 , H01L29/41733 , H01L29/458 , H01L29/66765 , H01L29/78618 , H01L29/78678
摘要： A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode.
摘要翻译：半导体器件包括绝缘基板和设置在基板上的TFT元件。 TFT元件包括在绝缘基板上依次排列的栅电极，栅极绝缘膜，半导体层以及源电极和漏电极。半导体层包括由多晶半导体构成的有源层和介于有源层与源电极之间的接触层段，以及介于有源层和漏电极之间的另一接触层段。源极和漏极各自具有面对与有源层的界面相对的有源层的相对面的第一面和与有源层的蚀刻侧面对置的第二面。每个接触层段设置在源极或漏极之间的有源层和第一和第二表面中的每一个之间。

65. 发明申请

US20110186848A1 Semiconductor device and display device 审中-公开
公开(公告)号：US20110186848A1
公开(公告)日：2011-08-04
申请号：US13064733
申请日：2011-04-12
申请人： Takeshi Sakai
发明人： Takeshi Sakai
IPC分类号： H01L33/16 , H01L29/04 , H01L29/786 , H01L33/08
CPC分类号： H01L29/78678 , H01L29/41733 , H01L29/78609 , H01L29/78696
摘要： A semiconductor device can easily reduce a leak current which flows when a reversely-staggered-type TFT element in which an active layer is made of polycrystalline semiconductor is turned off. The semiconductor device includes a reversely-staggered-type TFT element in which a semiconductor layer, a source electrode and a drain electrode are arranged on a surface of an insulation film, and a portion of the source electrode and a portion of the drain electrode respectively get over the semiconductor layer. The active layer of the semiconductor layer is mainly made of polycrystalline semiconductor constituted of strip-shaped crystals elongated in the channel length direction of the TFT element, and is configured in a plan view such that the source electrode and the drain electrode are respectively pulled out from positions above the active layer in the channel width direction of the TFT element and in the directions opposite to each other, and the source electrode intersects with only one side out of two sides of the active layer which extend in the channel length direction, and the drain electrode intersects with only another side out of two sides of the active layer which extend in the channel length direction.

66. 发明申请

US20100231807A1 BROADCAST RECEIVING APPARATUS AND STARTING METHOD THEREOF 审中-公开
标题翻译：广播接收装置及其启动方法
公开(公告)号：US20100231807A1
公开(公告)日：2010-09-16
申请号：US12788892
申请日：2010-05-27
申请人： Takeshi Sakai , Katsunobu Kimura
发明人： Takeshi Sakai , Katsunobu Kimura
IPC分类号： H04N5/63
CPC分类号： H04N5/63 , H04N5/4401 , H04N5/781 , H04N5/85 , H04N21/42222 , H04N21/44218 , H04N21/4436
摘要： A display apparatus, including: a display portion to display an image based upon a digital broadcasting signal received by a receiving portion; a main control portion to control each portion within the display apparatus; and a sub-control portion to control a supply of electronic power within the display apparatus, responsive to a signal wherein a waiting condition of the display apparatus in which an image is not displayed after stopping a supply of the electronic power to the display portion, is controlled by the sub-control portion, to be placeable into either of a first or second waiting condition, the first waiting condition is smaller in consumption of electronic power and the sub-control portion and the main control portion are controlled not to be set in operation, under the first waiting condition, while both are controlled to be set in operation, under the second waiting condition.
摘要翻译：一种显示装置，包括：显示部分，用于基于由接收部分接收的数字广播信号显示图像; 主控制部分，用于控制显示装置内的每个部分; 以及子控制部分，用于响应于在停止向显示部分提供电子电力而不显示图像的显示装置的等待状况的信号来控制显示装置内的电力供应，由子控制部控制，可以放置在第一等待状态或第二等待状态中，第一等待条件在电力消耗中较小，并且子控制部分和主控制部分被控制为不被设置在第一等待条件下，在第二等待条件下，两者均被控制设定运行。

67. 发明申请

US20100202205A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100202205A1
公开(公告)日：2010-08-12
申请号：US12764090
申请日：2010-04-20
申请人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
发明人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
IPC分类号： G11C16/04 , H01L29/792
CPC分类号： H01L27/11568 , G11C16/0466 , H01L21/28282 , H01L27/115 , H01L29/42344 , H01L29/66833 , H01L29/792
摘要： The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
摘要翻译：改善了具有非易失性存储元件的半导体器件的积分度和重写次数。与第一MONOS非易失性存储元件相比，具有大门宽度的第一MONOS非易失性存储元件和第二MONOS非易失性存储元件一起安装在同一衬底上，并且第一MONOS非易失性存储元件是用于存储几乎不被重写的程序数据，并且第二MONOS非易失性存储元件用于存储频繁重写的处理数据。

68. 发明授权

US07730507B2 Broadcast receiving apparatus and starting method thereof 有权
标题翻译：广播接收装置及其启动方法
公开(公告)号：US07730507B2
公开(公告)日：2010-06-01
申请号：US11748108
申请日：2007-05-14
申请人： Takeshi Sakai , Katsunobu Kimura
发明人： Takeshi Sakai , Katsunobu Kimura
IPC分类号： H04H60/32
CPC分类号： H04N5/63 , H04N5/4401 , H04N5/781 , H04N5/85 , H04N21/42222 , H04N21/44218 , H04N21/4436
摘要： For providing a broadcast receiving apparatus and a method for staring thereof, suppressing electric power consumption therein, under waiting condition, irrespective of mounting a constituent part requiring a long time for starting up, according to the present invention, within a broadcast receiving apparatus, detection is made, always, upon an approach of a human being, by means of a human sensor 40 and a sub-CPU 60, under the condition that a power plug 75 is inserted into a commercial electric power source, so as to control supply of electric power form a main electric power source unit to each of portions of that apparatus. Thus, prior to startup of that apparatus through a main switch 22 and a remote controller 30, a constituent portion (i.e., a video processing portion 200), being made up with a CPU and/or a digital LSI, installing OS therein and talking time for startup thereof, is started up, in advance, so as to bring it into awaiting condition; thereby shortening or reducing the waiting time after the startup of the apparatus with suppressing the electric power consumption under the waiting condition thereof.
摘要翻译：为了提供广播接收装置及其凝视方法，在等待条件下抑制电力消耗，根据本发明，无论安装需要较长时间启动的组成部分，在广播接收装置内，检测在电源插头75插入商用电源的条件下，通过人体传感器40和副CPU60总是在人的接近时进行，以便控制供应电力形成主电源单元到该设备的每个部分。因此，在通过主开关22和遥控器30启动该装置之前，由CPU和/或数字LSI组成的组成部分（即，视频处理部分200）在其中安装操作系统和通话启动时间，提前启动，使其处于等待状态; 从而缩短或缩短了在其等待状态下抑制电力消耗的设备启动之后的等待时间。

69. 发明申请

US20090261329A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20090261329A1
公开(公告)日：2009-10-22
申请号：US12423865
申请日：2009-04-15
申请人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Yoshiki Yonamoto , Naotoshi Akamatsu , Toshihiko Itoga , Takuo Kaitoh , Takahiro Kamo , Gi-il Kim , Takeshi Sakai , Noboru Ooki
发明人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Yoshiki Yonamoto , Naotoshi Akamatsu , Toshihiko Itoga , Takuo Kaitoh , Takahiro Kamo , Gi-il Kim , Takeshi Sakai , Noboru Ooki
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/78609 , H01L29/66765 , H01L29/78669 , H01L31/02161
摘要： Provided is a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. In the display device using the TFT, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a part of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. A surface density of the defects is preferably 2.5×1010 cm−2 or more to 4.0×1010 cm−2 or less.
摘要翻译：提供一种使用TFT作为开关元件的显示装置，其中通过抑制光泄漏电流小而防止显示装置的图像劣化，特别是其中通过以下方式成为正固定电荷的缺陷的密度定义存在于TFT的保护绝缘膜中的光以抑制光漏电流。在使用TFT的显示装置中，TFT包括绝缘膜，非晶硅膜，漏电极和源电极，以及层叠在覆盖绝缘基板表面的一部分的栅电极上的保护绝缘膜其中保护绝缘膜包括在光照射下变成正固定电荷的缺陷。缺陷的表面密度优选为2.5×10 10 cm -2以上至4.0×10 10 cm -2以下。

70. 发明申请

US20090244107A1 VIDEO DISPLAY DEVICE AND COLOR TEMPERATURE CORRECTION METHOD FOR THE SAME 有权
标题翻译：视频显示设备和颜色温度校正方法
公开(公告)号：US20090244107A1
公开(公告)日：2009-10-01
申请号：US12405966
申请日：2009-03-17
申请人： Katsunobu Kimura , Takaaki Matono , Haruki Takata , Takeshi Sakai , Wataru Kato
发明人： Katsunobu Kimura , Takaaki Matono , Haruki Takata , Takeshi Sakai , Wataru Kato
IPC分类号： G09G5/10 , G09G3/20
CPC分类号： H04N9/73 , G09G5/02 , G09G2320/0666
摘要： A video display device that allows the color temperature of the signals in white color attributes having high luminance and low chroma saturation to be corrected with high precision is provided with a color temperature correction method so as to visually obtain a desirable white color on display. In some embodiments, the signal processing circuit can include an A/D converter to convert video signals into digitalized signals, a matrix circuit to convert the digitalized signals into luminance signals and at least two color difference signals, a hue conversion circuit to obtain hue signals from the color difference signals, a hue correction circuit to correct hue signals, a chroma saturation conversion circuit to obtain chroma saturation signals from color difference signals, a chroma saturation correction circuit to correct chroma saturation signals and a color temperature correction circuit to perform the color temperature correction on the respective hue and chroma saturation signals.
摘要翻译：使用色温校正方法，可以在显示器上目视获得所期望的白色，使具有高亮度和低色度饱和度的白色属性信号的色温被高精度地校正的视频显示装置。在一些实施例中，信号处理电路可以包括将视频信号转换为数字化信号的A / D转换器，用于将数字化信号转换为亮度信号和至少两个色差信号的矩阵电路，色调转换电路以获得色调信号从色差信号中校正色调信号的色调校正电路，色度饱和度转换电路，从色差信号获得色度饱和度信号，色度饱和度校正电路校正色饱和度信号，色温校正电路执行色彩对各个色调和色度饱和度信号进行温度校正。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式