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    • 62. 发明授权
    • Silicon carbide semiconductor device having junction barrier Schottky diode
    • 具有接合势垒肖特基二极管的碳化硅半导体器件
    • US07893467B2
    • 2011-02-22
    • US12153825
    • 2008-05-27
    • Takeo YamamotoEiichi Okuno
    • Takeo YamamotoEiichi Okuno
    • H01L29/66
    • H01L29/872H01L29/0619H01L29/063H01L29/0692H01L29/1608
    • A silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type; an insulating layer; a Schottky electrode; an ohmic electrode; a resurf layer; and second conductivity type layers. The drift layer and the second conductivity type layers provide multiple PN diodes. Each second conductivity type layer has a radial width with respect to a center of a contact region between the Schottky electrode and the drift layer. A radial width of one of the second conductivity type layers is smaller than that of another one of the second conductivity type layers, which is disposed closer to the center of the contact region than the one of the second conductivity type layers.
    • 碳化硅半导体器件包括衬底; 具有第一导电类型的漂移层; 绝缘层; 肖特基电极 欧姆电极; 一个复活层; 和第二导电类型层。 漂移层和第二导电类型层提供多个PN二极管。 每个第二导电类型层相对于肖特基电极和漂移层之间的接触区域的中心具有径向宽度。 所述第二导电型层之一的径向宽度小于所述第二导电类型层中的另一导电类型层的径向宽度,所述第二导电类型层被设置为比所述第二导电类型层中的所述第二导电类型层更靠近所述接触区域的中心。
    • 66. 发明申请
    • SIS semiconductor having junction barrier schottky device
    • SIS半导体具有结屏障肖特基装置
    • US20080277668A1
    • 2008-11-13
    • US12078350
    • 2008-03-31
    • Eiichi OkunoTakeo Yamamoto
    • Eiichi OkunoTakeo Yamamoto
    • H01L29/24
    • H01L29/0692H01L29/0615H01L29/0619H01L29/1608H01L29/45H01L29/861H01L29/872
    • A semiconductor device having a junction barrier Schottky diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the opening of the insulation film and an ohmic electrode on the substrate; a terminal structure having a RESURF layer surrounding the cell region; and multiple second conductive type layers on an inner side of the RESURF layer. The second conductive type layers and the drift layer provide a PN diode. The Schottky electrode includes a first Schottky electrode contacting the second conductive type layers with ohmic contact and a second Schottky electrode contacting the drift layer with Schottky contact.
    • 具有结屏障肖特基二极管的半导体器件包括:SiC衬底; 衬底上的漂移层; 漂移层上的绝缘膜在电池区域具有开口; 具有肖特基电极的肖特基势垒二极管,其通过绝缘膜的开口接触漂移层,并在衬底上接触欧姆电极; 具有围绕所述单元区域的RESURF层的端子结构; 以及在RESURF层的内侧上的多个第二导电类型层。 第二导电类型层和漂移层提供PN二极管。 肖特基电极包括与欧姆接触的第二导电类型层接触的第一肖特基电极和与漂移层接触肖特基接触的第二肖特基电极。
    • 69. 发明申请
    • Constant velocity universal joint
    • 恒速万向节
    • US20070066405A1
    • 2007-03-22
    • US10549565
    • 2004-12-09
    • Atsushi AndoTomohiko SatoTakumi MatsumotoTakeo Yamamoto
    • Atsushi AndoTomohiko SatoTakumi MatsumotoTakeo Yamamoto
    • F16D3/00
    • F16D3/2055F16D3/205F16D2003/2023
    • In a constant velocity universal joint including a double roller type roller unit, a cylindrical surface is formed in a radially outer surface of the outer roller; a flat engagement surface which is engaged with the cylindrical surface is formed in each of the guide grooves of the outer joint member; and the cylindrical surface satisfies following two equations, W1>PCR (1−cos θ)/2+μ3R3+μ2R1, W2>3PCR (1−cos θ)/2−μ3R3+μ2R1wherein W1, W2: a length from a center of the cylindrical surface to each of axially both end portions; PCR: a distance from an axis of the inner joint member to a center of the convex sphere of each of the leg shafts; θ: a required maximum joint angle; R1, R3: radii of the cylindrical surface and the concave sphere, respectively; and μ2, μ3: friction coefficients between the inner roller and the outer roller, and between the convex sphere and the concave sphere, respectively.
    • 在包括双辊型辊单元的等速万向接头中,在外辊的径向外表面上形成圆柱面; 在外接头构件的每个引导槽中形成有与圆筒形表面接合的平坦接合表面; 并且圆柱形表面满足以下两个等式:W 1> PCR(1-cosθ)/ 2 + mu 3 R 3 + mu 2 R 1,W 2> 3PCR (1-cosθ)/ 2-mu 3 R 3 +μ2 R 1其中W 1,W 2:从圆柱形表面的中心到每个的长度 轴向两端部; PCR:从内接头构件的轴线到每个腿轴的凸球的中心的距离; θ:所需的最大关节角度; R 1,R 3分别为圆柱面和凹球的半径; 和内部辊子和外部辊子之间以及凸形球体和凹形球体之间的摩擦系数分别为μ2,3/3。