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    • 61. 发明授权
    • Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
    • 电介质膜结构,使用电介质膜结构的压电致动器和喷墨头
    • US07513608B2
    • 2009-04-07
    • US11338774
    • 2006-01-25
    • Hiroshi AotoKenichi TakedaTetsuro FukuiToshihiro Ifuku
    • Hiroshi AotoKenichi TakedaTetsuro FukuiToshihiro Ifuku
    • B41J2/045
    • B41J2/14233H01L41/0973H01L41/316
    • The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (001′)face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.
    • 本发明提供了一种电介质膜结构,其具有设置在基板上的基板和电介质膜,并且其中电介质膜相对于基板具有(001)面取向,并且其中以下等式(1)中的值u, u =(Cc / Ca)×(Wa / Wc)(1)中的绝对值大于2的实数:<?in-line-formula description =“In-line formula”end =“lead” <?in-line-formula description =“In-line formula”end =“tail”?>其中,Cc是平面外的电介质膜的(001')面的峰值的计数数 X射线衍射测量(这里,l'是选择的自然数,使得Cc变为最大); Ca是In平面X射线衍射测定中的电介质膜的(h'00)面的峰值的计数数(这里,h'是选择为Cc变为最大的自然数); Wc是外平面摇摆曲线X射线衍射测定中的电介质膜的(001')面的峰值的半值宽度; Wa是In平面摇摆曲线X射线衍射测定中的电介质膜的(h'00)面的峰值的半值宽度。
    • 62. 发明申请
    • Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
    • 电介质膜结构,使用电介质膜结构的压电致动器和喷墨头
    • US20060176342A1
    • 2006-08-10
    • US11338774
    • 2006-01-25
    • Hiroshi AotoKenichi TakedaTetsuro FukuiToshihiro Ifuku
    • Hiroshi AotoKenichi TakedaTetsuro FukuiToshihiro Ifuku
    • B41J2/045
    • B41J2/14233H01L41/0973H01L41/316
    • The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (001′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); WC is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.
    • 本发明提供了一种电介质膜结构,其具有设置在基板上的基板和电介质膜,并且其中电介质膜相对于基板具有(001)面取向,并且其中以下等式(1)中的值u, 关于电介质膜是大于2的实数:<?in-line-formula description =“In-line Formulas”end =“lead”?> u =(C C 其中C是在平面外X射线衍射测量中电介质膜的(001')面的峰的计数(这里,l'是 选择的自然数使得C 变得最大); 在平面X射线衍射测量中,电介质膜的(h'00)面的峰值的计数数(这里,h'是选择的自然数,使得C 变为最大); WC是在平面外的摇摆曲线X射线衍射测定中的电介质膜的(001')面的峰值的半值宽度; 并且W a a是在平面内的摇摆曲线X射线衍射测量中电介质膜的(h'00)面的峰值的半值宽度。
    • 63. 发明授权
    • Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
    • 电介质膜结构,使用电介质膜结构的压电致动器和喷墨头
    • US07059711B2
    • 2006-06-13
    • US10769765
    • 2004-02-03
    • Hiroshi AotoKenichi TakedaTetsuro FukuiToshihiro Ifuku
    • Hiroshi AotoKenichi TakedaTetsuro FukuiToshihiro Ifuku
    • B41J2/045
    • B41J2/14233H01L41/0973H01L41/316
    • The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (00l′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (00l′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.
    • 本发明提供了一种电介质膜结构,其具有设置在基板上的基板和电介质膜,并且其中电介质膜相对于基板具有(001)面取向,并且其中以下等式(1)中的值u, 关于电介质膜是大于2的实数:<?in-line-formula description =“In-line Formulas”end =“lead”?> u =(C C 其中,C是在平面外X射线衍射测量中电介质膜的(001)面的峰值的计数(这里,l'是 选择的自然数使得C 变得最大); 在平面X射线衍射测量中,电介质膜的(h'00)面的峰值的计数数(这里,h'是选择的自然数,使得C 变为最大); 在平面外的摇摆曲线X射线衍射测量中,电介质薄膜的(001')面的峰值的半值宽度是半值宽度; 并且W a a是在平面内的摇摆曲线X射线衍射测量中电介质膜的(h'00)面的峰值的半值宽度。
    • 70. 发明申请
    • PIEZOELECTRIC MATERIAL
    • 压电材料
    • US20090026408A1
    • 2009-01-29
    • US12135980
    • 2008-06-09
    • Kaoru MiuraToshihiro IfukuKenichi TakedaTetsuro FukuiHiroshi Funakubo
    • Kaoru MiuraToshihiro IfukuKenichi TakedaTetsuro FukuiHiroshi Funakubo
    • H01L41/187
    • H01L41/1871H01L41/43
    • The present invention provides a piezoelectric material which can be applied even to the MEMS technique, exhibits satisfactory piezoelectricity even at high ambient temperatures and is environmentally clean, namely, a piezoelectric material including an oxide obtained by forming a solid solution composed of two perovskite oxides A(1)B(1)O3 and A(2)B(2)O3 different from each other in crystalline phase, the oxide being represented by the following general formula (1): X{A(1)B(1)O3}−(1−X){A(2)B(2)O3}  (1) wherein “A(1)” and “A(2)” are each an element including an alkali earth metal and may be the same or different from each other; “B(1)” and “B(2)” each include two or more metal elements, and either one of “B(1)” and “B(2)” contains Cu in a content of 3 atm % or more; and “X” satisfies the relation 0
    • 本发明提供一种甚至可以应用于MEMS技术的压电材料,即使在高环境温度下也表现出令人满意的压电性,并且是环境清洁的,即包括通过形成由两种钙钛矿氧化物A形成的固溶体获得的氧化物的压电材料 (1)在结晶相中彼此不同的B(1)O 3和A(2)B(2)O 3,所述氧化物由以下通式(1)表示:<?in-line-formula description =“In (1)B(1)O3} - (1-X){A(2)B(2)O3}(1)<?在线公式 description =“In-line Formulas”end =“tail”?>其中“A(1)”和“A(2)”分别是包含碱土金属的元素,可以相同或不同; “B(1)”和“B(2)”各自包含两个或更多个金属元素,“B(1)”和“B(2)”中的任一个含有3atm%以上的Cu; 和“X”满足0