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61. 发明授权

US5006363A Plasma assited MO-CVD of perooskite dalectric films 失效
标题翻译：等离子体组合了钙钛矿介电薄膜的MO-CVD
公开(公告)号：US5006363A
公开(公告)日：1991-04-09
申请号：US446767
申请日：1989-12-06
申请人： Eiji Fujii , Hideo Torii , Masaki Aoki
发明人： Eiji Fujii , Hideo Torii , Masaki Aoki
IPC分类号： C23C16/40
CPC分类号： C23C16/409
摘要： Disclosed is a method of forming a Perovskite-type dielectric film on a substrate under low temperature by decomposing and reacting vapor of organometallic compound containing metal for the dielectric, vapor of organometallic compound containing titanium, and oxygen in a reduced-pressure and plasma.
摘要翻译：公开了一种在低温下在基板上形成钙钛矿型电介质膜的方法，该方法是在电解液中含有金属化合物的金属化合物，含钛的有机金属化合物的蒸气和减压和等离子体中的氧的蒸气蒸发。

62. 发明授权

US4953385A Information storage stamper and method of manufacturing disks using the same 失效
标题翻译：信息存储模具及其制造方法
公开(公告)号：US4953385A
公开(公告)日：1990-09-04
申请号：US396622
申请日：1989-08-22
申请人： Masaki Aoki , Hideo Torii , Kiyoshi Kuribayashi , Hideto Monji , Makoto Umetani , Eiji Fujii
发明人： Masaki Aoki , Hideo Torii , Kiyoshi Kuribayashi , Hideto Monji , Makoto Umetani , Eiji Fujii
IPC分类号： G11B5/84 , G11B7/26
CPC分类号： G11B7/26 , G11B5/84 , Y10S425/81
摘要： On a cemented carbide alloy disk or a cermet disk having been coated with either an iridium (Ir) alloy film or a ruthenium (Ru) alloy film is formed guide grooves by photography or ECR ion etching. The disk thus obtained is used as an optical or magnetic disk stamper. Next, a glass or aluminium disk is placed between a pair of stampers obtained as above and molded under pressure while heating thereby to make guide grooves of an optical or magnetic disk.
摘要翻译：在用铱（Ir）合金膜或钌（Ru）合金膜涂覆的硬质合金圆盘或金属陶瓷盘上，通过摄影或ECR离子蚀刻形成引导槽。将如此获得的盘用作光盘或磁盘压模。接下来，将玻璃或铝盘放置在如上获得的一对压模之间，同时在加热的同时模压成型，从而形成光盘或磁盘的导槽。

63. 发明授权

US4825256A Image recording device 失效
标题翻译：图像记录装置
公开(公告)号：US4825256A
公开(公告)日：1989-04-25
申请号：US159296
申请日：1988-02-23
申请人： Hitoshi Nakai , Takemi Yamamoto , Jun Sakai , Eiji Fujii
发明人： Hitoshi Nakai , Takemi Yamamoto , Jun Sakai , Eiji Fujii
IPC分类号： G03G21/00 , G03D13/00 , G03F7/00 , G03G15/22 , G03G15/28 , G03B27/32 , G03B27/52
CPC分类号： G03G15/28 , G03F7/0022 , G03G15/228 , G03B2227/325
摘要： An image recording device wherein a photo-sensitive paper or a plain paper is selected as a recording medium. If a monochrom image is to be recorded, a provisional image formed with light-shield materials which corresponds to an original image to be recorded is directly transferred onto the plain paper to form a monochrom image thereon. If a color image is to be recorded, the light-shield image is once transferred onto an image carrier, and the light-shield image carried on the image carrier is exposed on the photo-sensitive paper to form a latent image thereon. The latent image formed on the photo-sensitive paper by the above exposure is then developed to a visible color image.
摘要翻译：一种图像记录装置，其中选择感光纸或普通纸作为记录介质。如果要记录单色图像，则用与要记录的原始图像对应的遮光材料形成的临时图像直接转印到普通纸上以在其上形成单色图像。如果要记录彩色图像，则将遮光图像一次转印到图像载体上，并且承载在图像载体上的遮光图像在感光纸上曝光以在其上形成潜像。然后通过上述曝光在感光纸上形成的潜像显影成可见的彩色图像。

64. 发明授权

US08193548B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08193548B2
公开(公告)日：2012-06-05
申请号：US13284294
申请日：2011-10-28
申请人： Hiroyuki Tanaka , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
发明人： Hiroyuki Tanaka , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L2933/0083 , H01L2933/0091
摘要： An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.
摘要翻译：发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱层，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极订购。 n侧电极与n型氮化物半导体层电连接。窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触。发光二极管还包括形成在n型单晶ZnO透明膜上的多个单晶ZnO棒。单晶ZnO棒的各自的下部具有从单晶n型ZnO透明膜朝向n型氮化物半导体层而锐化的倒锥形。

65. 发明授权

US07837305B2 Piezoelectric element, ink jet head, and ink jet recording device 有权
标题翻译：压电元件，喷墨头和喷墨记录装置
公开(公告)号：US07837305B2
公开(公告)日：2010-11-23
申请号：US12021373
申请日：2008-01-29
申请人： Shintarou Hara , Osamu Watanabe , Kazumi Sadamatsu , Hideaki Horio , Eiji Fujii
发明人： Shintarou Hara , Osamu Watanabe , Kazumi Sadamatsu , Hideaki Horio , Eiji Fujii
IPC分类号： B41J2/045
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1635 , B41J2/1642 , B41J2/1643 , B41J2/1645 , B41J2/1646 , B41J2202/11 , H01L41/0475 , H01L41/0973
摘要： A piezoelectric element includes a pressure chamber member that has an opening communicating with a nozzle, a vibrating plate that is disposed on the pressure chamber member so as to cover the opening, a lower electrode that is disposed on the vibrating plate, a piezoelectric body that is disposed on the lower electrode, an upper electrode that is disposed on the piezoelectric body and in a region opposed to the opening, and a lead electrode that is disposed on the piezoelectric body, that extends from the upper electrode, and that has a width smaller than that of the upper electrode. The piezoelectric body includes a groove portion that is disposed in a predetermined region along an edge portion of the opening and an inactive region (piezoelectric inactive region) that is a region other than the groove portion, that is disposed along the edge portion of the opening, and that does not substantially serve as a piezoelectric element. The lead electrode is disposed in the piezoelectric inactive region.
摘要翻译：压电元件包括具有与喷嘴连通的开口的压力室构件，设置在压力室构件上以覆盖开口的振动板，设置在振动板上的下电极，压电体，设置在下电极上，上电极设置在压电体上并且与开口相对的区域中，以及引线电极，其设置在压电体上，其从上电极延伸，并且具有宽度小于上电极。压电体包括沿着开口的边缘部分布置在预定区域中的凹槽部分和沿着开口的边缘部分设置的除了凹槽部分之外的区域的非活动区域（压电非活性区域），并且基本上不用作压电元件。引线电极设置在压电无源区域中。

66. 再颁专利

USRE40871E1 Method of producing plasma display panel with protective layer of an alkaline earth oxide 有权
标题翻译：制造具有碱土金属氧化物保护层的等离子体显示面板的方法
公开(公告)号：USRE40871E1
公开(公告)日：2009-08-18
申请号：US09997536
申请日：2001-11-29
申请人： Masaki Aoki , Hideo Torii , Eiji Fujii , Mitsuhiro Ohtani , Takashi Inami , Hiroyuki Kawamura , Hiroyoshi Tanaka , Ryuichi Murai , Yasuhisa Ishikura , Yutaka Nishimura , Katsuyoshi Yamashita
发明人： Masaki Aoki , Hideo Torii , Eiji Fujii , Mitsuhiro Ohtani , Takashi Inami , Hiroyuki Kawamura , Hiroyoshi Tanaka , Ryuichi Murai , Yasuhisa Ishikura , Yutaka Nishimura , Katsuyoshi Yamashita
IPC分类号： C30B29/16
CPC分类号： C23C16/404 , C23C16/403 , H01J9/02 , H01J11/12 , H01J11/38 , H01J11/40 , H01J11/50 , H01J2211/38 , H01J2211/40 , H01J2211/50 , Y10T117/1004 , Y10T117/1008
摘要： The first object of the present invention is to provide a PDP with improved panel brightness which is achieved by improving the efficiency in conversion from discharge energy to visible rays. The second object of the present invention is to provide a PDP with improved panel life which is achieved by improving the protecting layer protecting the dielectrics glass layer. To achieve the first object, the present invention sets the amount of xenon in the discharge gas to the range of 10% by volume to less than 100% by volume, and sets the charging pressure for the discharge gas to the range of 500 to 760 Torr which is higher than conventional charging pressures. With such construction, the panel brightness increases. Also, to achieve the second object, the present invention has, on the surface of the dielectric glass layer, a protecting layer consisting of an alkaline earth oxide with (100)-face or (110)-face orientation. The protecting layer, which may be formed by using thermal Chemical Vapor Deposition (CVD) method, plasma enhanced CVD method, or a vapor deposition method with irradiation of ion or electron beam, will have a high sputtering resistance and effectively protect the dielectrics glass layer. Such a protecting layer contributes to the improvement of the panel life.
摘要翻译：本发明的第一个目的是提供一种具有改进的面板亮度的PDP，其通过提高从放电能量到可见光的转换的效率来实现。本发明的第二个目的是提供一种具有改善面板寿命的PDP，其通过改进保护电介质玻璃层的保护层来实现。为了实现第一个目的，本发明将放电气体中的氙的量设定为10体积％至小于100体积％的范围，并将放电气体的充电压力设定在500至760的范围内高于常规充气压力的Torr。通过这样的结构，面板亮度增加。此外，为了实现第二个目的，本发明在电介质玻璃层的表面上具有由具有（100）面或（110）面取向的碱土金属氧化物构成的保护层。可以通过使用热化学气相沉积（CVD）法，等离子体增强CVD法或通过离子或电子束照射的气相沉积法形成的保护层将具有高溅射电阻并且有效地保护电介质玻璃层。这样的保护层有助于提高面板寿命。

67. 发明授权

US07132709B2 Semiconductor device including a capacitor having a capacitive insulating film of an insulating metal oxide 失效
标题翻译：包括具有绝缘金属氧化物的电容绝缘膜的电容器的半导体装置
公开(公告)号：US07132709B2
公开(公告)日：2006-11-07
申请号：US10149389
申请日：2001-11-02
申请人： Yoshihisa Nagano , Toyoji Ito , Sadayuki Imanishi , Eiji Fujii
发明人： Yoshihisa Nagano , Toyoji Ito , Sadayuki Imanishi , Eiji Fujii
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/11502 , H01L21/76832 , H01L21/76834 , H01L27/11507 , H01L28/55
摘要： A capacitor 11 made up of a lower electrode 8, a capacitive insulating film 9 of an insulating metal oxide and an upper electrode 10 is formed over a semiconductor substrate 1. A first-layer wire 14 is formed on a passivation film 12 that covers the capacitor 11. A first interlevel dielectric film 15 is deposited to cover the first-layer wire 14. A second interlevel dielectric film 17 is deposited over the first interlevel dielectric film 15 with a barrier film 16, which overlaps the capacitor 11 for preventing hydrogen from diffusing, interposed therebetween. A second-layer wire 19 is formed on the second interlevel dielectric film 17. The first interlevel dielectric film 15 has a hydrogen content lower than that of the second interlevel dielectric film 17.
摘要翻译：在半导体衬底1上形成由下电极8，绝缘金属氧化物的电容绝缘膜9和上电极10组成的电容器11.第一层布线14形成在钝化膜12上，电容器11.沉积第一层间绝缘膜15以覆盖第一层布线14.第二层间电介质膜17在第一层间绝缘膜15上沉积有阻挡膜16，阻挡膜16与电容器11重叠以防止氢扩散。在第二层间电介质膜17上形成第二层布线19.第一层间绝缘膜15的氢含量低于第二层间电介质膜17的氢含量。

68. 发明授权

US07083270B2 Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus 有权
标题翻译：压电元件，喷墨头，角速度传感器，其制造方法和喷墨记录装置
公开(公告)号：US07083270B2
公开(公告)日：2006-08-01
申请号：US10462358
申请日：2003-06-16
申请人： Hideo Torii , Eiji Fujii , Atsushi Tomozawa , Akiko Murata , Ryoichi Takayama , Taku Hirasawa
发明人： Hideo Torii , Eiji Fujii , Atsushi Tomozawa , Akiko Murata , Ryoichi Takayama , Taku Hirasawa
IPC分类号： B41J2/045
CPC分类号： G01P15/0922 , B41J2/14233 , B41J2/14282 , B41J2002/1425 , B41J2202/03 , G01C19/5607 , H01L41/0477 , H01L41/0815 , H01L41/094 , H01L41/0973 , H01L41/316 , H01L41/319
摘要： In a piezoelectric element 20, a first electrode layer 2 made of an alloy of at least one metal selected from the group consisting of cobalt, nickel, iron, manganese and copper and a noble metal is formed on a silicon substrate 1, and a piezoelectric layer 3 made of a rhombohedral or tetragonal perovskite oxide (e.g., PZT) is formed on the first electrode layer 2 so that the piezoelectric layer 3 is preferentially oriented along the (001) plane.
摘要翻译：在压电元件20中，在硅基板1上形成由选自钴，镍，铁，锰和铜中的至少一种金属和贵金属构成的第一电极层2，在第一电极层2上形成由菱方或四方钙钛矿氧化物（例如PZT）制成的层3，使得压电层3优先沿（001）面取向。

69. 发明申请

US20060146097A1 Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus 有权
标题翻译：压电元件，喷墨头，角速度传感器，其制造方法和喷墨记录装置
公开(公告)号：US20060146097A1
公开(公告)日：2006-07-06
申请号：US11362583
申请日：2006-02-24
申请人： Eiji Fujii , Hideo Torii , Ryoichi Takayama , Atsushi Tomozawa , Akiko Murata , Taku Hirasawa
发明人： Eiji Fujii , Hideo Torii , Ryoichi Takayama , Atsushi Tomozawa , Akiko Murata , Taku Hirasawa
IPC分类号： B41J2/045
CPC分类号： H01L41/0815 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1646 , B41J2002/14491 , B41J2202/03 , G01C19/5607 , H01L41/1876 , H01L41/316 , Y10T29/49401
摘要： In a piezoelectric element, an adhesive layer 12 is provided on a substrate 11, a first electrode layer 14 made of a noble metal containing titanium or titanium oxide is provided on the adhesive layer 12, and an orientation control layer 15 that is preferentially oriented along a (100) or (001) plane is provided on the first electrode layer 14. In the vicinity of a surface of the orientation control layer 15 that is closer to the first electrode layer 14, a (100)- or (001)-oriented region extends over titanium or titanium oxide located on one surface of the first electrode layer 14 that is closer to the orientation control layer 15, and the cross-sectional area of the region in the direction perpendicular to the thickness direction gradually increases in the direction away from the first electrode layer 14 toward the opposite side. Further, a piezoelectric layer 16 that is preferentially oriented along a (001) plane is provided on the orientation control layer 15.
摘要翻译：在压电元件中，在基板11上设置粘合剂层12，在粘合剂层12上设置由含有钛或氧化钛的贵金属构成的第一电极层14，优选的是取向控制层15 在第一电极层14上设置（100）或（001）面。在取向控制层15的靠近第一电极层14的表面附近，位于第一电极层14的一个表面上的（100）或（001）取向区域延伸到钛或氧化钛上更靠近取向控制层15，并且沿与厚度方向正交的方向的区域的横截面积沿远离第一电极层14的方向逐渐增大。此外，在取向控制层15上设置优选沿（001）面取向的压电体层16。

70. 发明授权

US06943398B2 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US06943398B2
公开(公告)日：2005-09-13
申请号：US10705984
申请日：2003-11-13
申请人： Toyoji Ito , Eiji Fujii , Kazuo Umeda
发明人： Toyoji Ito , Eiji Fujii , Kazuo Umeda
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/115
CPC分类号： H01L27/11502 , H01L27/105 , H01L27/10852 , H01L27/10894 , H01L27/11507 , H01L27/11509 , H01L28/55 , H01L28/57 , H01L28/65
摘要： A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

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