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61. 发明申请

US20070210715A1 Vacuum Tube And Vacuum Tube Manufacturing Apparatus And Method 失效
标题翻译：真空管及真空管制造装置及方法
公开(公告)号：US20070210715A1
公开(公告)日：2007-09-13
申请号：US10594896
申请日：2005-03-31
申请人： Tadahiro Ohmi , Akihiro Morimoto
发明人： Tadahiro Ohmi , Akihiro Morimoto
IPC分类号： H01J7/02 , H01J9/38 , H01J9/46
CPC分类号： H01J9/395 , H01J7/02 , H01J9/38 , H01J9/385 , H01J17/20 , H01J21/00 , H01J37/18 , H01J61/20 , H01J61/24
摘要： With respect to a vacuum tube having a reduced pressure vessel containing an electric discharge gas sealed therein, problems such as the lowering of discharge efficiency owing to an organic material, moisture or oxygen remaining in the reduced pressure vessel have taken place conventionally. It has been now found that the selection of the number of water molecules, the number of molecules of an organic gas and the number of oxygen molecules remaining in the reduced pressure vessel, in a relation with the number of molecules of a gas contributing the electric discharge allows the reduction of the adverse effect by the above-mentioned remaining gas. Specifically, the selection of the number of molecules of the above electric discharge gas being about ten times that of the above-mentioned remaining gas or more can reduce the adverse effect by the above-mentioned remaining gas.
摘要翻译：对于具有密封在其中的放电气体的减压容器的真空管，常规地发生诸如由于有机材料引起的排出效率降低，残留在减压容器中的水分或氧气的问题。现在已经发现，选择水分子的数量，有机气体的分子数和残留在减压容器中的氧分子的数量与导致电气的气体的分子数的关系放电允许通过上述剩余气体减少不利影响。具体而言，选择上述放电气体的分子数为上述剩余气体的10倍以上的分子数量，可以减少上述剩余气体的不利影响。

62. 发明授权

US07268404B2 Device having a silicon oxide film containing krypton 失效
标题翻译：装置具有含有氪的氧化硅膜
公开(公告)号：US07268404B2
公开(公告)日：2007-09-11
申请号：US10700466
申请日：2003-11-05
申请人： Tadahiro Ohmi
发明人： Tadahiro Ohmi
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/1214 , H01L21/28194 , H01L21/28211 , H01L21/28238 , H01L29/4908 , H01L29/518 , H01L2924/0002 , H01L2924/00
摘要： A silicon oxide film (1701) serving as a gate insulating film of a semiconductor device contains Kr. Therefore, the stress in the silicon oxide film (1701) and the stress at the interface between silicon and the silicon oxide film are relaxed, and the silicon oxide film has a high quality even though it was formed at a low temperature. The uniformity of thickness of the silicon oxide film (1701) on the silicon of the side wall of a groove (recess) in the element isolating region is 30% or less. Consequently, the silicon oxide film (1701) has its characteristics and reliability superior to those of a silicon thermal oxide film, and the element isolating region can be made small, thereby realizing a high-performance transistor integrated circuit preferably adaptable to an SOI transistor and a TFT.
摘要翻译：用作半导体器件的栅极绝缘膜的氧化硅膜（1701）包含Kr。因此，氧化硅膜（1701）中的应力和硅与氧化硅膜之间的界面处的应力被松弛，并且氧化硅膜即使在低温下形成也具有高质量。元件隔离区域的槽（凹部）的侧壁的硅上的氧化硅膜（1701）的厚度的均匀度为30％以下。因此，氧化硅膜（1701）的特性和可靠性优于硅热氧化膜，可以使元件隔离区域变小，从而实现优选适于SOI晶体管的高性能晶体管集成电路，一个TFT。

63. 发明申请

US20070151321A1 Automatic zero point correction device for a pressure sensor, a pressure control device and a pressure type flow rate control device 有权
标题翻译：用于压力传感器，压力控制装置和压力式流量控制装置的自动零点校正装置
公开(公告)号：US20070151321A1
公开(公告)日：2007-07-05
申请号：US10561602
申请日：2004-06-10
申请人： Tadahiro Ohmi , Kazuhiko Sugiyama , Shoichi Hino , Eiji Takahashi , Makoto Saegusa , Nobukazu Ikeda , Kouji Nishino , Ryousuke Dohi , Toyomi Uenoyama , Katsuyuki Sugita
发明人： Tadahiro Ohmi , Kazuhiko Sugiyama , Shoichi Hino , Eiji Takahashi , Makoto Saegusa , Nobukazu Ikeda , Kouji Nishino , Ryousuke Dohi , Toyomi Uenoyama , Katsuyuki Sugita
IPC分类号： G01L27/00 , G01F25/00
CPC分类号： G01L19/02 , G01L9/065 , G01L19/0023 , G05D7/0635
摘要： The invention provides an automatic zero point correction device that includes a pressure sensor, wherein output from the sensor is outputted and the sensor output is inputted to a time-varying zero point drift correction means of the sensor; a sensor output judgement means of the time-varying zero point drift correction means, wherein the sensor output judgement means operates to make a judgement determining whether the sensor output is larger than a set value; and operating condition judgement means of the time-varying zero point drift correction means, wherein the operating condition judgement means judges operating conditions of the sensor, wherein the time-varying zero point drift correction means operates to cancel time-varying zero point drift of the sensor when the sensor output judgement means determines sensor output is larger than the set value and the operating condition judgement means determines operating conditions of the sensor are within previously set operating conditions.
摘要翻译：本发明提供了一种自动零点校正装置，其包括压力传感器，其中输出来自传感器的输出，并且传感器输出被输入到传感器的时变零点漂移校正装置; 时变零点漂移校正装置的传感器输出判断装置，其中传感器输出判断装置进行判断，判断传感器输出是否大于设定值; 以及时变零点漂移校正装置的操作条件判断装置，其中操作条件判断装置判断传感器的操作条件，其中时变零点漂移校正装置操作以消除时变零点漂移校正装置的时变零点漂移传感器输出判断装置确定传感器输出大于设定值，并且操作条件判断装置确定传感器的操作条件在预先设定的操作条件下。

64. 发明申请

US20070105523A1 Low noise amplifier 审中-公开
标题翻译：低噪声放大器
公开(公告)号：US20070105523A1
公开(公告)日：2007-05-10
申请号：US10560703
申请日：2004-06-11
申请人： Takefumi Nishimuta , Hiroshi Miyagi , Tadahiro Ohmi , Shigetoshi Sugawa , Akinobu Teramoto
发明人： Takefumi Nishimuta , Hiroshi Miyagi , Tadahiro Ohmi , Shigetoshi Sugawa , Akinobu Teramoto
IPC分类号： H04B1/10 , H04B1/28 , H04B1/16
CPC分类号： H01L21/82385 , H01L21/823807 , H01L27/092 , H01L29/785 , H03F1/26 , H03F2200/372 , H03G1/0029 , H03G1/007
摘要： A low noise amplifier is assumed to comprise an MIS transistor and to amplify an input signal keeping noise at a low level, and the MIS transistor comprises a semiconductor substrate for comprising a first crystal plane as a principal plane, a semiconductor structure, formed as a part of the semiconductor substrate, for comprising a pair of sidewall planes defined by the second crystal plane different from the first crystal plane and a top plane defined by the third crystal plane different from the second crystal plane, a gate insulator of uniform thickness covering the principal plane, the sidewall planes and the top plane, a gate electrode for continuously covering the principal plane, the sidewall planes and the top plane on top of the gate insulator, and a single conductivity type diffusion area formed in the region to either side of the gate electrode in the semiconductor substrate and the semiconductor structure and continuously extending along the principal plane, the sidewall planes and the top plane. Such a configuration allows significant reduction of the 1/f noise and the signal distortion applied to an output signal by the low noise amplifier and therefore a circuit for compensating for the reduction of the amplitude is no longer of necessity, allowing reduction in size.
摘要翻译：假设低噪声放大器包括MIS晶体管并且将保持噪声保持在低电平的输入信号放大，并且MIS晶体管包括用于包括第一晶面作为主平面的半导体衬底，形成为所述半导体衬底的一部分包括由不同于所述第一晶体面的所述第二晶体面限定的一对侧壁平面和由与所述第二晶体面不同的所述第三晶体面限定的顶面，覆盖所述半导体衬底的均匀厚度的栅极绝缘体主平面，侧壁平面和顶面，用于连续覆盖主平面，侧壁平面和栅极绝缘体顶部的顶面的栅极，以及在该区域中形成的单一导电型扩散区域半导体衬底中的栅电极和半导体结构，并且沿着主平面连续延伸，侧壁p 车道和顶层飞机。这样的配置允许显着降低由低噪声放大器施加到输出信号的1 / f噪声和信号失真，因此不再需要用于补偿幅度减小的电路，从而允许尺寸减小。

65. 发明申请

US20070096289A1 A Multilayered circuit substrate with semiconductor device incorporated therein 有权
标题翻译：具有并入其中的半导体器件的多层电路基板
公开(公告)号：US20070096289A1
公开(公告)日：2007-05-03
申请号：US11529319
申请日：2006-09-29
申请人： Ryo Enomoto , Tadahiro Ohmi , Akihiro Morimoto
发明人： Ryo Enomoto , Tadahiro Ohmi , Akihiro Morimoto
IPC分类号： H01L23/24 , H01L23/12 , H01L23/22
CPC分类号： H01L23/5389 , H01L23/49827 , H01L24/24 , H01L24/82 , H01L24/97 , H01L25/105 , H01L2224/2402 , H01L2224/24227 , H01L2224/32225 , H01L2224/73267 , H01L2224/8203 , H01L2224/82047 , H01L2224/92244 , H01L2224/97 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/14 , H01L2924/15153 , H01L2924/15331 , H01L2924/30107 , H01L2924/3511 , H01L2224/82
摘要： For the purpose of providing a semiconductor element built-in type multilayered circuit board in which a semiconductor element is closely joined to a recess of an insulating substrate to effectively disperse heat generated from the semiconductor element through the insulating substrate at a working temperature region of the semiconductor element circuit board, to surely conduct an electrical connection of an electronic part such as semiconductor element or the like in a short wiring and to enable the high density mounting of semiconductor elements, miniaturization and increase of working speed, there is proposed a semiconductor element built-in type multilayered circuit board formed by laminating a plurality of semiconductor element built-in type boards each comprising an insulating substrate and a semiconductor element accommodated in a recess formed therein, characterized in that a difference between a linear expansion coefficient of the insulating substrate and a linear expansion coefficient of the semiconductor element in a temperature zone of 20-300° C. is less than 1×10−5/K.
摘要翻译：为了提供半导体元件内置型多层电路板，其中半导体元件紧密接合到绝缘基板的凹部，以在半导体元件的工作温度区域有效地分散通过绝缘基板从半导体元件产生的热量半导体元件电路板，可靠地将诸如半导体元件等的电子部件的电连接在短布线中，并且能够实现半导体元件的高密度安装，小型化和提高工作速度，提出了半导体元件内置型多层电路板，其通过层叠多个半导体元件内置型板而形成，所述多个半导体元件内置型基板包括绝缘基板和容纳在其中形成的凹部中的半导体元件，其特征在于，所述绝缘基板的线膨胀系数和线性膨胀公司温度范围为20-300℃的半导体元件的效率小于1×10 -5 / K。

66. 发明申请

US20070066797A1 Apparatus for producing polymer 审中-公开
标题翻译：用于生产聚合物的装置
公开(公告)号：US20070066797A1
公开(公告)日：2007-03-22
申请号：US10569624
申请日：2004-08-24
申请人： Tadahiro Ohmi , Mitsushi Tada , Toshihiko Jimbo
发明人： Tadahiro Ohmi , Mitsushi Tada , Toshihiko Jimbo
IPC分类号： B01J19/20 , B32B19/02
CPC分类号： C08F6/005 , B29C48/08 , B29C48/762 , B29K2067/00
摘要： An apparatus for producing a polymer, wherein the surface of a member contacting with the polymer of a device for melting and molding a raw material polymer has been subjected to a passivation treatment and is covered by a passive film, wherein ultra-pure water is used as a solvent to be injected into a molten polymer, to prevent the incorporation of a contaminant, and wherein an inert gas is fed to the line for discharging a gas, to prevent the contamination by back diffusion. As the above passive film, an aluminum oxide film or a chromium oxide film is preferred.
摘要翻译：聚合物的制造装置，其中与原料聚合物熔融成型装置的聚合物接触的部件表面进行了钝化处理，被钝化膜覆盖，其中使用超纯水作为注入熔融聚合物的溶剂，以防止污染物的引入，并且其中惰性气体被供给到用于排出气体的管线，以防止反向扩散污染。作为上述钝化膜，优选氧化铝膜或氧化铬膜。

67. 发明申请

US20070030568A1 High-reflectance visible-light reflector member, liquid-crystal display backlight unit employing the same, and manufacture of the high-reflectance visible-light reflector member 审中-公开
标题翻译：高反射率可见光反射器部件，采用该反射器的液晶显示器背光单元以及高反射率可见光反射器部件
公开(公告)号：US20070030568A1
公开(公告)日：2007-02-08
申请号：US11492217
申请日：2006-07-25
申请人： Tadahiro Ohmi , Tetsuya Goto , Nobuaki Seki , Satoshi Ikeda , Kouichi Niikura
发明人： Tadahiro Ohmi , Tetsuya Goto , Nobuaki Seki , Satoshi Ikeda , Kouichi Niikura
IPC分类号： G02B1/10 , F21V9/04 , G02F1/1335 , B32B17/06 , C23C14/00 , C23C14/32
CPC分类号： G02B5/0858 , C23C14/022 , C23C14/205 , C23C14/345 , C23C14/584 , C23C16/0281 , C23C16/345 , C23C28/322 , C23C28/34 , C23C28/36 , G02B6/0055
摘要： A reflector member of the present invention includes a silver thin film formed on a substrate and a silicon nitride protection film formed on the silver thin film. The silver thin film has the (111) orientation as the principal plane orientation. Preferably, 99% or more of the silver thin film has the (111) orientation as the principal plane orientation. The thickness of the silver thin film is in a range of 100 nm to 350 nm.
摘要翻译：本发明的反射构件包括形成在基板上的银薄膜和形成在银薄膜上的氮化硅保护膜。银薄膜具有（111）取向作为主平面取向。优选地，99％以上的银薄膜的（111）取向为主面取向。银薄膜的厚度在100nm至350nm的范围内。

68. 发明申请

US20060281323A1 Method of cleaning substrate processing apparatus 审中-公开
标题翻译：清洗基板处理装置的方法
公开(公告)号：US20060281323A1
公开(公告)日：2006-12-14
申请号：US10555668
申请日：2004-04-22
申请人： Tadahiro Ohmi , Masaki Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama
IPC分类号： H01L21/302
CPC分类号： C23C16/4405 , H01J37/32192 , H01J2237/335
摘要： A method for cleaning a microwave plasma processing apparatus is disclosed wherein a cleaning gas is introduced and then excited with microwave plasma (step 3). By applying high-frequency power to a substrate supporting stage by which a substrate to be processed is supported (step 4), the etching rate is improved, thereby shortening the cleaning time.
摘要翻译：公开了一种清洁微波等离子体处理装置的方法，其中引入清洁气体，然后用微波等离子体激发（步骤3）。通过对被处理基板的基板支撑台施加高频电力（步骤4），能够提高蚀刻速度，缩短清洗时间。

69. 发明授权

US07120556B2 Performance evaluation method for plasma processing apparatus for continuously maintaining a desired performance level 失效
公开(公告)号：US07120556B2
公开(公告)日：2006-10-10
申请号：US10887795
申请日：2004-07-09
申请人： Akira Nakano , Tadahiro Ohmi
发明人： Akira Nakano , Tadahiro Ohmi
IPC分类号： G06F19/00
CPC分类号： H01J37/32082 , H01J37/32935
摘要： The performance of a plasma processing apparatus which is disassembled, transferred, and reassembled is evaluated. The plasma processing apparatus has a plasma processing chamber having an electrode for exciting a plasma, a radiofrequency generator connected to the electrode, and an impedance matching circuit for performing the impedance matching between the plasma processing chamber and the radiofrequency generator. The performance of the apparatus is evaluated whether or not three times the first series resonant frequency of the plasma processing chamber is larger than the power frequency supplied to the plasma processing chamber.

70. 发明申请

US20060216948A1 Substrate processing system and method for manufacturing semiconductor device 审中-公开
标题翻译：基板加工系统及半导体器件制造方法
公开(公告)号：US20060216948A1
公开(公告)日：2006-09-28
申请号：US10547504
申请日：2004-03-04
申请人： Tadahiro Ohmi , Akinobu Teramoto
发明人： Tadahiro Ohmi , Akinobu Teramoto
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02052 , H01L21/67017 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67046 , H01L21/67051 , H01L21/6715 , H01L21/67161 , H01L21/67173
摘要： An object of the present invention is to completely remove water adhering to a substrate due to cleaning and carry the substrate with the water being removed, to a film forming unit. The present invention is a substrate processing system including: a cleaning unit for cleaning a substrate with a cleaning solution; a water removing unit for removing water adhering to the substrate cleaned in the cleaning unit; and a carrier section for carrying the substrate from which water has been removed in the water removing unit to another substrate processing unit through a dry atmosphere.
摘要翻译：本发明的一个目的是完全去除由于清洗而附着在基材上的水，并且将被除去的水携带在基板上的成膜单元。本发明是一种基板处理系统，包括：用清洗液清洗基板的清洗单元; 除水单元，用于去除在清洁单元中清洁的粘附到基底上的水; 以及承载部，其通过干燥气氛将去除水分中的水从基板移出到另一基板处理单元。

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