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61. 发明申请

US20090057774A1 Methods of forming bipolar transistors by silicide through contact and structures formed thereby 审中-公开
标题翻译：通过硅化物通过接触形成双极晶体管的方法和由此形成的结构
公开(公告)号：US20090057774A1
公开(公告)日：2009-03-05
申请号：US12288932
申请日：2008-10-24
申请人： Kelin J. Kuhn , Bo Zheng
发明人： Kelin J. Kuhn , Bo Zheng
IPC分类号： H01L27/06 , H01L29/732
CPC分类号： H01L29/66295 , H01L21/8249 , H01L27/0623 , H01L29/732
摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may comprise forming an opening in a masking layer, implanting an amorphizing species into a silicon region disposed within the opening, wherein the silicon region comprises a portion of an emitter of a bipolar transistor; and forming a silicide layer on the silicon region.
摘要翻译：描述形成微电子器件的方法和相关结构。这些方法可以包括在掩模层中形成开口，将非晶化物质注入布置在开口内的硅区域，其中硅区域包括双极晶体管的发射极的一部分; 以及在所述硅区上形成硅化物层。

62. 发明申请

US20080275988A1 Method And System For Lawful Interception In Next Generation Networks 审中-公开
标题翻译：下一代网络中合法侦听的方法和系统
公开(公告)号：US20080275988A1
公开(公告)日：2008-11-06
申请号：US12175893
申请日：2008-07-18
申请人： Bo Zheng
发明人： Bo Zheng
IPC分类号： G06F15/173
CPC分类号： H04L29/06027 , H04L63/306 , H04L65/1026 , H04L65/1083 , H04M3/2281
摘要： A method and system for lawful interception by Law Enforcement Agency (LEA) in next generation networks. The system includes a Delivery Function 3 (DF3) entity, an interception information provision entity, and a Border Gateway Function (BGF) entity. The method includes a Border Gateway Function (BGF) entity in a next generation network is connected with a Delivery Function 3 (DF3) entity of the LEA; an interception information provision entity sends monitored object information to the BGF entity; the BGF entity receives the monitored object information and sends the media flows corresponding to the monitored subscriber(s) according to the monitored object information to the DF3 entity.
摘要翻译：执法机构（LEA）在下一代网络中合法拦截的方法和制度。该系统包括传送功能3（DF 3）实体，拦截信息提供实体和边界网关功能（BGF）实体。该方法包括下一代网络中的边界网关功能（BGF）实体与LEA的传递功能3（DF 3）实体连接; 拦截信息提供实体向BGF实体发送监控对象信息; BGF实体接收被监视对象信息，并根据被监视对象信息将对应于被监视用户的媒体流发送到DF3实体。

63. 发明授权

US07403426B2 Memory with dynamically adjustable supply 有权
标题翻译：内存动态可调电源
公开(公告)号：US07403426B2
公开(公告)日：2008-07-22
申请号：US11137905
申请日：2005-05-25
申请人： Fatih Hamzaoglu , Kevin Zhang , Nam Sung Kim , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Vivek K. De , Bo Zheng
发明人： Fatih Hamzaoglu , Kevin Zhang , Nam Sung Kim , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Vivek K. De , Bo Zheng
IPC分类号： G11C11/34
CPC分类号： G11C5/14 , G11C11/413
摘要： In some embodiments, a memory array is provided with cells that when written to or read from, can have modified supplies to enhance their read stability and/or write margin performance. Other embodiments may be disclosed and/or claimed.
摘要翻译：在一些实施例中，存储器阵列具有当写入或读取时可以具有修改的电源以增强其读取稳定性和/或写入裕度性能的单元。可以公开和/或要求保护其他实施例。

64. 发明申请

US20070116786A1 A LIPIDIC EXTRACT FROM LEPIDIUM MEYNII AND ITS EFFECT ON THE LIBIDO 审中-公开
标题翻译： LIPIDIC提取物从LEPIDIUM MEYNII及其对LIBIDO的影响
公开(公告)号：US20070116786A1
公开(公告)日：2007-05-24
申请号：US11460142
申请日：2006-07-26
申请人： Qun Zheng , Bo Zheng , Kan He
发明人： Qun Zheng , Bo Zheng , Kan He
IPC分类号： A61K36/185 , A61K31/56 , A61K31/198 , A61K31/26 , A61K31/165
CPC分类号： A61K36/31 , A61K31/165 , A61K31/198 , A61K31/26 , A61K31/56 , A61K2300/00
摘要： The present invention relates to compositions containing particular components that can be obtained from a plant which can have pharmaceutical applications. More particularly, the plant genus is Lepidium and the composition may contain in the range of between about 0.3% and 0.7% of benzyl isothiocyanate, b) between about 0.06% and about 0.02% of Lepidium sterol component, c) between about 1% and about 2% of a Lepidium fatty acid component, and d) about 0.006% to 0.6% or more total macamide/macaenes component as standardized with excipients.
摘要翻译：本发明涉及包含可以从可以具有药物应用的植物获得的特定组分的组合物。更具体地，植物属是叶菜属，组合物可以含有约0.3％至0.7％的异硫氰酸苄酯，b）约0.06％至约0.02％的Lepidium甾醇组分，c）约1％至约2％的Lepidium脂肪酸组分，以及d）用赋形剂标准化的约0.006％至0.6％或更多的总的macamide / macaenes组分。

65. 发明申请

US20070089990A1 Adjustable dosing algorithm for control of a copper electroplating bath 审中-公开
标题翻译：用于控制铜电镀浴的可调定量算法
公开(公告)号：US20070089990A1
公开(公告)日：2007-04-26
申请号：US11255855
申请日：2005-10-20
申请人： Joseph Behnke , Timothy Webb , Yevgeniy Rabinovich , Bo Zheng , Thomas Fischenich
发明人： Joseph Behnke , Timothy Webb , Yevgeniy Rabinovich , Bo Zheng , Thomas Fischenich
IPC分类号： C25D21/18
CPC分类号： C25D21/18 , C25D21/14 , H01L21/2885
摘要： A method and apparatus for supplying a dose to an electrolyte solution including measuring the time after adding fresh solution, measuring the Amp-hours after adding fresh solution, measuring the number of substrates processed by the solution, calculating the volume of a dose to supply to the solution based on the time, Amp-hours, and number of substrates processed, and adding the dose to the solution.
摘要翻译：一种用于向电解质溶液供应剂量的方法和装置，包括在添加新鲜溶液后测量时间，在加入新鲜溶液后测量安培小时，测量由溶液处理的底物数量，计算供给量的剂量基于时间的解决方案，安培小时数和处理的底物数量，并向溶液中加入剂量。

66. 发明申请

US20060002177A1 Six-transistor (6T) static random access memory (SRAM) with dynamically variable p-channel metal oxide semiconductor (PMOS) strength 有权
标题翻译：具有动态可变p沟道金属氧化物半导体（PMOS）强度的六晶体管（6T）静态随机存取存储器（SRAM）
公开(公告)号：US20060002177A1
公开(公告)日：2006-01-05
申请号：US10883609
申请日：2004-06-30
申请人： Bo Zheng , Kevin Zhang , Fatih Hamzaoglu , Yih Wang
发明人： Bo Zheng , Kevin Zhang , Fatih Hamzaoglu , Yih Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/417 , G11C11/412
摘要： In embodiments of the present invention, a static random access memory (SRAM) device has an array of memory cells in columns and rows. An individual memory cell includes two PMOS pull-up devices coupled to two NMOS pull-down devices. In READ mode and/or STANDBY/NO-OP mode of a column, the two PMOS pull-up devices are effectively strengthened by forward biasing the PMOS n-wells or by utilizing a lower threshold voltage PMOS device by implanting a lower halo dose in the PMOS device. In WRITE mode of a column, the two PMOS pull-up devices are effectively weakened by reverse biasing the PMOS n-wells or by coupling the sources of the NMOS devices to virtual ground (VSSi).
摘要翻译：在本发明的实施例中，静态随机存取存储器（SRAM）装置具有列和行中的存储器单元阵列。单个存储单元包括耦合到两个NMOS下拉器件的两个PMOS上拉器件。在列的READ模式和/或STANDBY / NO-OP模式下，通过正向偏置PMOS n阱或利用较低阈值电压PMOS器件，通过将较低的光晕剂量 PMOS器件。在列的写入模式下，通过反向偏置PMOS n阱或通过将NMOS器件的源耦合到虚拟接地（V SUB SSi），两个PMOS上拉器件被有效地削弱。

67. 发明授权

US06913680B1 Method of application of electrical biasing to enhance metal deposition 有权
标题翻译：施加电偏压以增强金属沉积的方法
公开(公告)号：US06913680B1
公开(公告)日：2005-07-05
申请号：US09614407
申请日：2000-07-12
申请人： Bo Zheng , Hougong Wang , Girish Dixit , Fusen Chen
发明人： Bo Zheng , Hougong Wang , Girish Dixit , Fusen Chen
IPC分类号： C25D5/18 , C25D7/12 , C25D13/22 , C25D21/12 , H01L21/288 , H01L21/302 , H01L21/3065 , H01L21/768
CPC分类号： H01L21/76877 , C25D5/18 , C25D7/123 , C25D17/001 , C25D21/12 , H01L21/2885
摘要： A method and associated apparatus includes depositing metal on a plating surface of an object immersed in an electrolyte solution prior to bulk deposition on the plating surface. In one aspect, the method further includes applying a voltage between an anode and the plating surface to enhance the concentration of metal ions in the electrolyte solution that is contained in a feature on the plating surface prior to the bulk deposition on the plating surface.
摘要翻译：一种方法和相关设备包括在沉积在电镀表面上之前，在浸在电解质溶液中的物体的电镀表面上沉积金属。一方面，该方法还包括在阳极和电镀表面之间施加电压，以增强在电镀表面上的主体沉积之前在电镀表面上的特征中包含的电解质溶液中的金属离子的浓度。

68. 发明申请

US20050087122A1 Device and method for pressure-driven plug transport and reaction 有权
标题翻译：压力驱动塞子运输和反应的装置和方法
公开(公告)号：US20050087122A1
公开(公告)日：2005-04-28
申请号：US10765718
申请日：2004-01-26
申请人： Rustem Ismagliov , Joshua Tice , Cory Gerdts , Bo Zheng
发明人： Rustem Ismagliov , Joshua Tice , Cory Gerdts , Bo Zheng
IPC分类号： C30B1/00 , G01N1/00
CPC分类号： B01L3/502784 , B01D9/0072 , B01D2009/0086 , B01F5/0646 , B01F5/0647 , B01F13/0071 , B01J14/00 , B01J19/0046 , B01J19/0093 , B01J2219/00286 , B01J2219/00576 , B01J2219/00585 , B01J2219/00599 , B01J2219/00722 , B01J2219/00725 , B01J2219/00736 , B01J2219/00756 , B01J2219/00783 , B01J2219/00837 , B01J2219/0086 , B01J2219/00869 , B01J2219/00889 , B01J2219/00891 , B01J2219/00894 , B01J2219/00903 , B01J2219/00975 , B01J2219/00977 , B01L3/502715 , B01L3/50273 , B01L2200/0673 , B01L2200/12 , B01L2300/0867 , B01L2400/0487 , B82Y30/00 , C07K14/43 , C12N9/2462 , C12Q1/6806 , C12Y302/01017 , C30B7/14 , C30B29/54 , C30B29/58 , G01N1/28 , G01N35/08 , Y10T117/10 , Y10T137/0318 , Y10T436/117497 , Y10T436/143333 , Y10T436/25
摘要： The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.
摘要翻译：本发明提供微制造的底物和在这些底物内进行反应的方法。反应发生在在载体流体流中输送的塞子中。

69. 外观设计

USD471548S1 Mobile phone holder 失效
公开(公告)号：USD471548S1
公开(公告)日：2003-03-11
申请号：US29163933
申请日：2002-07-15
申请人： Bo Zheng
设计人： Bo Zheng

70. 发明授权

US06179925B2 Method and apparatus for improved control of process and purge material in substrate processing system 失效
标题翻译：用于改善衬底处理系统中工艺和吹扫材料控制的方法和装置
公开(公告)号：US06179925B2
公开(公告)日：2001-01-30
申请号：US09311449
申请日：1999-05-14
申请人： John Schmitt , Bo Zheng , Mei Chang , Stephen Voss
发明人： John Schmitt , Bo Zheng , Mei Chang , Stephen Voss
IPC分类号： C23C1600
CPC分类号： C23C16/45561 , C23C16/4481 , C23C16/52
摘要： A method and apparatus for control of precursor and purge additive materials in a deposition system comprising a precursor material delivery system and a plurality of purge additive transfer lines connected between or at components in the precursor material delivery system. One of the plurality of purge additive transfer lines is connected between an ampoule and a liquid mass flow controller, another is connected between the liquid mass flow controller and a vaporizer and a third is connected to the vaporizer. The apparatus further comprises a process chamber connected to the precursor material delivery system and having a susceptor wherein one of the plurality of purge additive transfer lines is connected to the susceptor. With the apparatus and accompanying method, formation of particulate contaminants is greatly reduced. The purge additive provided at strategic locations within the deposition system provides a stabilizing effect to any precursor that remains in the transfer lines and helps to control the CVD reaction at the exclusion zone.
摘要翻译：一种用于在沉积系统中控制前体和吹扫添加剂材料的方法和装置，包括前体材料输送系统和连接在前体材料输送系统中的组分之间或其中的多个清除添加剂输送管线。多个清洗添加剂输送管线之一连接在安瓿和液体质量流量控制器之间，另一个连接在液体质量流量控制器和蒸发器之间，第三个连接到蒸发器。该设备还包括连接到前体材料输送系统并具有基座的处理室，其中多个清除添加剂输送管线中的一个连接到基座。利用该装置和伴随方法，大大降低了颗粒污染物的形成。提供在沉积系统内的战略位置处的清洗添加剂对保留在传输管线中的任何前体提供了稳定作用，并有助于控制排除区域的CVD反应。

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