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    • 65. 发明授权
    • Phase-shifting transformer with a six-phase core
    • 具有六相磁芯的相移变压器
    • US5003277A
    • 1991-03-26
    • US390821
    • 1989-08-08
    • Katsuji SokaiKoichi Ishii
    • Katsuji SokaiKoichi Ishii
    • H01F30/12
    • H01F30/12
    • A phase-shifting transformer including main and series transformer units comprises a six-phase core including six independent magnetic circuits, numbered first through sixth from right to left. The combined U-, V-, and W-phase windings of the main transformer unit link with the fifth, third, and first magnetic circuits, respectively. The combined a-, b-, and c-phase windings of the series transformer unit link with the sixth, fourth, and second magnetic circuits. The winding directions of the V- and b-phase windings are reversed with respect to those of other phase windings. Thus, if three-phase voltages 120 degrees apart are input to the main transformer unit, then the phase angles between the main magnetic fluxes generated in any two adjacent magnetic circuits are equal to 30 degrees. Consequently, the magnitudes of the differential magnetic fluxes passing through the interphase portions between two adjacent magnetic circuits are reduced to about one half of the magnitudes of the main magnetic fluxes, with the result that the cross-sectional area of the interphase portions of the core can be reduced to about one half of that of its main leg portions.
    • 包括主变压器和串联变压器单元的移相变压器包括六相铁心,其包括六个独立的磁路,从右到左从第一到第六。 主变压器单元的组合U形,V形和W相绕组分别与第五,第三和第一磁路连接。 串联变压器单元的组合的a,b和c相绕组与第六,第四和第二磁路连接。 V相和B相绕组的绕组方向相对于其它相绕组的绕组方向反向。 因此,如果相对于主变压器单元120度输入三相电压,则在任意两个相邻的磁路中产生的主磁通之间的相位角等于30度。 因此,通过两个相邻磁路之间的相间部分的差动磁通量的大小减小到主磁通量的大约的一半,结果是磁芯的相间部分的横截面积 可以减少到其主要腿部的大约一半。
    • 67. 发明申请
    • UNCOOLED INFRARED IMAGING DEVICE
    • 未经处理的红外成像装置
    • US20130248714A1
    • 2013-09-26
    • US13728009
    • 2012-12-27
    • Hiroto HondaKazuhiro SuzukiHideyuki FunakiMasaki AtsutaKeita SasakiKoichi IshiiHonam Kwon
    • Hiroto HondaKazuhiro SuzukiHideyuki FunakiMasaki AtsutaKeita SasakiKoichi IshiiHonam Kwon
    • H01L27/146G01J5/20
    • G01J5/12G01J5/023G01J5/20G01J5/22G01J2005/0077H01L27/14649H04N5/33
    • An uncooled infrared imaging device according to an embodiment includes: reference pixels formed on a semiconductor substrate and arranged in at least one row; and infrared detection pixels arranged in the remaining rows and detecting incident infrared rays. Each of the reference pixels includes a first cell located above a first concave portion. The first cell includes a first thermoelectric conversion unit having a first infrared absorption film; and a first thermoelectric conversion element. Each of the infrared detection pixels includes a second cell located above a second concave portion, and having a larger area than the first cell. The second cell includes: a second thermoelectric converting unit located above the second concave portion; and first and second supporting structure units supporting the second thermoelectric converting unit above the second concave portion. The second thermoelectric converting unit includes: a second infrared absorption film; and a second thermoelectric conversion element.
    • 根据实施例的非冷却红外成像装置包括:形成在半导体衬底上并布置在至少一行中的参考像素; 以及布置在其余行中的红外检测像素,并检测入射的红外线。 每个参考像素包括位于第一凹部上方的第一单元。 第一电池包括具有第一红外线吸收膜的第一热电转换单元; 和第一热电转换元件。 每个红外检测像素包括位于第二凹部上方的第二单元,并且具有比第一单元更大的面积。 第二单元包括:位于第二凹部上方的第二热电转换单元; 以及第一和第二支撑结构单元,其在第二凹部上方支撑第二热电转换单元。 第二热电转换单元包括:第二红外线吸收膜; 和第二热电转换元件。