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61. 外观设计

USD310660S Keyboard for programmable controller 失效
公开(公告)号：USD310660S
公开(公告)日：1990-09-18
申请号：US307582
申请日：1989-02-06
申请人： Katsuhiro Ishida
设计人： Katsuhiro Ishida

62. 外观设计

USD283822S Cash register 失效
公开(公告)号：USD283822S
公开(公告)日：1986-05-13
申请号：US639262
申请日：1984-08-09
申请人： Katsuhiro Ishida
设计人： Katsuhiro Ishida

63. 外观设计

USD278715S Ink jet printer 失效
公开(公告)号：USD278715S
公开(公告)日：1985-05-07
申请号：US452838
申请日：1982-12-23
申请人： Katsuhiro Ishida , Harumi Sakamoto
设计人： Katsuhiro Ishida , Harumi Sakamoto

64. 外观设计

USD267946S Facsimile transceiver 失效
公开(公告)号：USD267946S
公开(公告)日：1983-02-15
申请号：US188381
申请日：1980-09-18
申请人： Mikio Kosako , Katsuhiro Ishida
设计人： Mikio Kosako , Katsuhiro Ishida

65. 发明授权

US08039970B2 Stacked semiconductor device and method of manufacturing the same 有权
标题翻译：叠层半导体器件及其制造方法
公开(公告)号：US08039970B2
公开(公告)日：2011-10-18
申请号：US12021780
申请日：2008-01-29
申请人： Kazuhiro Yamamori , Katsuhiro Ishida
发明人： Kazuhiro Yamamori , Katsuhiro Ishida
IPC分类号： H01L23/49
CPC分类号： H01L24/85 , H01L23/3128 , H01L23/4952 , H01L23/49575 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/78 , H01L24/83 , H01L25/0657 , H01L2224/2919 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/48475 , H01L2224/48479 , H01L2224/48599 , H01L2224/73265 , H01L2224/78301 , H01L2224/8385 , H01L2224/85051 , H01L2224/85181 , H01L2224/85186 , H01L2224/85201 , H01L2224/85205 , H01L2224/85986 , H01L2224/97 , H01L2225/0651 , H01L2225/06575 , H01L2924/00014 , H01L2924/01006 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/20752 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2224/4554 , H01L2224/85399 , H01L2224/05599
摘要： A stacked semiconductor device includes a first semiconductor element mounted on a circuit substrate and a second semiconductor element stacked on the first semiconductor element via a spacer layer. An electrode pad of the first semiconductor element is electrically connected to a connection portion of the circuit substrate through a first metal wire. A vicinity of the end portion of the first metal wire connected to the electrode pad is in contact with an insulating protection film which covers the surface of the first semiconductor element.
摘要翻译：层叠半导体器件包括安装在电路基板上的第一半导体元件和经由间隔层堆叠在第一半导体元件上的第二半导体元件。第一半导体元件的电极焊盘通过第一金属线电连接到电路基板的连接部分。连接到电极焊盘的第一金属线的端部附近与覆盖第一半导体元件的表面的绝缘保护膜接触。

66. 发明授权

US07968993B2 Stacked semiconductor device and semiconductor memory device 失效
标题翻译：堆叠半导体器件和半导体存储器件
公开(公告)号：US07968993B2
公开(公告)日：2011-06-28
申请号：US12170062
申请日：2008-07-09
申请人： Katsuhiro Ishida , Ryoji Matsushima
发明人： Katsuhiro Ishida , Ryoji Matsushima
IPC分类号： H01L23/02
CPC分类号： H01L24/85 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/18 , H01L2224/04042 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/4809 , H01L2224/48091 , H01L2224/48095 , H01L2224/48139 , H01L2224/48145 , H01L2224/48147 , H01L2224/48227 , H01L2224/48471 , H01L2224/48475 , H01L2224/48479 , H01L2224/48499 , H01L2224/48599 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/83 , H01L2224/85051 , H01L2224/85986 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/078 , H01L2924/09701 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/20752 , H01L2224/85186 , H01L2224/78 , H01L2924/00 , H01L2924/00012 , H01L2224/4554 , H01L2224/85399 , H01L2224/05599
摘要： A stacked semiconductor device includes a first semiconductor element mounted on a wiring board and a second semiconductor element stacked on the first semiconductor element. Electrode pads of the first and second semiconductor elements are electrically connected to connection pads of the wiring board via first and second metal wires. The second metal wire is wired so that a part thereof is in contact with an insulating protective film covering a surface of the first semiconductor element.
摘要翻译：叠层半导体器件包括安装在布线板上的第一半导体元件和堆叠在第一半导体元件上的第二半导体元件。第一和第二半导体元件的电极焊盘经由第一和第二金属线电连接到布线板的连接焊盘。第二金属线被布线，使得其一部分与覆盖第一半导体元件的表面的绝缘保护膜接触。

67. 发明授权

US07795667B2 Semiconductor memory preventing an electric short circuit between a word line and a semiconductor substrate, and manufacturing method for the semiconductor memory 失效
标题翻译：防止字线和半导体基板之间的电短路的半导体存储器以及半导体存储器的制造方法
公开(公告)号：US07795667B2
公开(公告)日：2010-09-14
申请号：US10612033
申请日：2003-07-03
申请人： Tadashi Iguchi , Katsuhiro Ishida , Hiroaki Tsunoda , Hirohisa Iizuka , Hiroaki Hazama , Seiichi Mori
发明人： Tadashi Iguchi , Katsuhiro Ishida , Hiroaki Tsunoda , Hirohisa Iizuka , Hiroaki Hazama , Seiichi Mori
IPC分类号： H01L27/115 , H01L21/336
CPC分类号： H01L27/11521 , H01L27/115 , H01L27/11524
摘要： A semiconductor device comprises a non-volatile memory including a memory cell array, element isolating regions, a second trench and a word line. The memory cell array is constituted by memory cells which have floating electrodes and are arranged in the shape of a matrix on a semiconductor substrate. Each of the element isolating regions has a first trench formed in the semiconductor substrate and between memory cells adjacent to each other along a gate width direction, and an isolating filler filled in the first trench. The second trench is formed in the isolating filler and between the floating electrodes of the memory cells adjacent to each other along the gate width direction, and is narrow at the bottom thereof. The word line is connected to the memory cells, buried in the second trenches and extending along the gate width direction.
摘要翻译：半导体器件包括非易失性存储器，其包括存储单元阵列，元件隔离区，第二沟槽和字线。存储单元阵列由具有浮置电极且在半导体衬底上以矩阵形状排列的存储单元构成。每个元件隔离区域具有形成在半导体衬底中的第一沟槽和沿着栅极宽度方向彼此相邻的存储单元和填充在第一沟槽中的隔离填料。第二沟槽形成在隔离填料中并且沿着栅极宽度方向彼此相邻的存储单元的浮置电极之间，并且在其底部处窄。字线连接到存储单元，埋在第二沟槽中并沿着栅极宽度方向延伸。

68. 发明授权

US07755175B2 Multi-stack chip package with wired bonded chips 有权
标题翻译：具有有线接合芯片的多堆叠芯片封装
公开(公告)号：US07755175B2
公开(公告)日：2010-07-13
申请号：US11555902
申请日：2006-11-02
申请人： Katsuhiro Ishida , Ryoji Matsushima
发明人： Katsuhiro Ishida , Ryoji Matsushima
IPC分类号： H01L23/495 , H01L21/00 , H01R9/00
CPC分类号： H01L24/85 , H01L23/3107 , H01L23/4951 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L2224/05553 , H01L2224/05554 , H01L2224/32145 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48147 , H01L2224/48247 , H01L2224/48471 , H01L2224/48475 , H01L2224/4911 , H01L2224/73265 , H01L2224/78301 , H01L2224/85045 , H01L2224/85051 , H01L2224/85181 , H01L2224/85205 , H01L2224/85951 , H01L2224/85986 , H01L2224/92247 , H01L2225/06562 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01037 , H01L2924/01058 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/1532 , H01L2924/181 , H01L2924/19043 , H01L2924/00014 , H01L2924/00 , H01L2224/48227 , H01L2924/00012
摘要： A stack-type semiconductor device according to the present invention includes a circuit board with bonding pads; a first semiconductor chip which includes first electrode pads and is mounted on the circuit board; a second semiconductor chip which includes second electrode pads and is mounted on the first semiconductor chip; a plurality of bonding wires sequentially connecting the bonding pads, the first electrodes and the second electrodes as a whole; and a sealing resin for sealing the first semiconductor chip, the second semiconductor chip and the bonding wires.
摘要翻译：根据本发明的堆叠型半导体器件包括具有接合焊盘的电路板; 第一半导体芯片，其包括第一电极焊盘并安装在所述电路板上; 第二半导体芯片，其包括第二电极焊盘并安装在第一半导体芯片上; 多个接合线，整体上依次连接接合焊盘，第一电极和第二电极; 以及用于密封第一半导体芯片，第二半导体芯片和接合线的密封树脂。

69. 发明授权

US07719117B2 Semiconductor device having multilayer wiring structure 有权
标题翻译：具有多层布线结构的半导体装置
公开(公告)号：US07719117B2
公开(公告)日：2010-05-18
申请号：US11828727
申请日：2007-07-26
申请人： Katsuhiro Ishida , Hiroshi Sugiura , Makoto Hasegawa , Katsuya Ito
发明人： Katsuhiro Ishida , Hiroshi Sugiura , Makoto Hasegawa , Katsuya Ito
IPC分类号： H01L23/48
CPC分类号： H01L23/5226 , H01L21/76838 , H01L23/53223 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate, a lower wiring layer formed on the semiconductor substrate, a first interlayer insulating film formed on the lower wiring layer and including a first upper surface and a second upper surface, the first upper surface being higher than the second upper surface relative to a surface of the semiconductor substrate, a contact plug formed in the interlayer insulating film and including a first bottom surface contacting to the lower wiring layer, a third upper surface flush with the second upper surface and a fourth upper surface flush with the first upper surface, an upper wiring layer formed on the first and third upper surfaces and including a first side surface and a second side surface opposite to the first side surface, and a second interlayer insulating film formed on the second and fourth upper surfaces.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底上的下部布线层，形成在下部布线层上并包括第一上表面和第二上表面的第一层间绝缘膜，第一上表面高于第二上表面相对于半导体基板的表面的上表面，形成在层间绝缘膜中并包括与下布线层接触的第一底面的接触塞，与第二上表面齐平的第三上表面和与第二上表面齐平的第四上表面所述第一上表面，形成在所述第一和第三上表面上并包括第一侧表面和与所述第一侧表面相对的第二侧表面的上布线层，以及形成在所述第二和第四上表面上的第二层间绝缘膜。

70. 发明申请

US20090014894A1 STACKED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE 失效
标题翻译：堆叠半导体器件和半导体存储器件
公开(公告)号：US20090014894A1
公开(公告)日：2009-01-15
申请号：US12170062
申请日：2008-07-09
申请人： Katsuhiro Ishida , Ryoji Matsushima
发明人： Katsuhiro Ishida , Ryoji Matsushima
IPC分类号： H01L23/49
CPC分类号： H01L24/85 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/18 , H01L2224/04042 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/4809 , H01L2224/48091 , H01L2224/48095 , H01L2224/48139 , H01L2224/48145 , H01L2224/48147 , H01L2224/48227 , H01L2224/48471 , H01L2224/48475 , H01L2224/48479 , H01L2224/48499 , H01L2224/48599 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/83 , H01L2224/85051 , H01L2224/85986 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/078 , H01L2924/09701 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/20752 , H01L2224/85186 , H01L2224/78 , H01L2924/00 , H01L2924/00012 , H01L2224/4554 , H01L2224/85399 , H01L2224/05599
摘要： A stacked semiconductor device includes a first semiconductor element mounted on a wiring board and a second semiconductor element stacked on the first semiconductor element. Electrode pads of the first and second semiconductor elements are electrically connected to connection pads of the wiring board via first and second metal wires. The second metal wire is wired so that a part thereof is in contact with an insulating protective film covering a surface of the first semiconductor element.
摘要翻译：叠层半导体器件包括安装在布线板上的第一半导体元件和堆叠在第一半导体元件上的第二半导体元件。第一和第二半导体元件的电极焊盘经由第一和第二金属线电连接到布线板的连接焊盘。第二金属线被布线，使得其一部分与覆盖第一半导体元件的表面的绝缘保护膜接触。

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