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61. 发明申请

US20050070035A1 Display panel and method for manufacturing the same 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US20050070035A1
公开(公告)日：2005-03-31
申请号：US10914333
申请日：2004-08-10
申请人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
发明人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
IPC分类号： G02F1/1368 , B23K26/06 , B23K26/073 , G09F9/30 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/064 , B23K26/0648 , B23K26/0652 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1229 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： An amorphous silicon film on an insulating substrate portion to be formed as an individual display panel in a large-sized insulating substrate is irradiated with a continuous-wave (CW) solid-state laser beam condensed linearly, while being scanned therewith at a fixed speed in the width direction of the condensed laser beam. A pixel portion and a peripheral circuit portion in the same insulating substrate portion are irradiated with the laser beam temporally modulated to have a power density high enough to provide predetermined crystallinity. The amorphous silicon film is transformed into a silicon film having crystallinity corresponding to performance required for thin film transistors to be built in each of the pixel portion and the peripheral circuit portion. In such a manner, a thin film transistor circuit having optimum crystallinity required in the pixel or peripheral circuit portion can be obtained while high throughput is kept. Thus, a product having good display features as a display panel can be provided inexpensively.
摘要翻译：在大尺寸绝缘基板上作为单独显示面板形成的绝缘基板部分上的非晶硅膜用线性冷却的连续波（CW）固态激光束照射，同时以固定速度扫描在聚光激光束的宽度方向上。在同一绝缘基板部分中的像素部分和外围电路部分被照射到时间调制的激光束以具有足够高的功率密度以提供预定的结晶度。将非晶硅膜转变成具有对应于要构建在每个像素部分和外围电路部分中的薄膜晶体管所需的性能的结晶度的硅膜。以这种方式，可以获得在像素或外围电路部分所需的最佳结晶度的薄膜晶体管电路，同时保持高通量。因此，可以廉价地提供具有作为显示面板的良好显示特征的产品。

62. 发明授权

US06635932B2 Thin film crystal growth by laser annealing 失效
公开(公告)号：US06635932B2
公开(公告)日：2003-10-21
申请号：US10213698
申请日：2002-08-06
申请人： Costas P. Grigoropoulos , Mutsuko Hatano , Ming-Hong Lee , Seung-Jae Moon
发明人： Costas P. Grigoropoulos , Mutsuko Hatano , Ming-Hong Lee , Seung-Jae Moon
IPC分类号： H01L2362
CPC分类号： H01L21/02686 , H01L21/2026
摘要： A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature. However, the central part of the liquid pool subjected to continued heating by the first laser beam cools down slowly. Grains nucleated in the periphery of the fully molten spot can therefore grow into the liquid-Si and extend in length until they collide at the center of the first laser beam spot. The first laser beam prolongs the molten Si phase and induces grain growth in a certain direction. The second laser beam triggers nucleation and controls grain location leading to subsequent lateral grain growth.

63. 发明授权

US5442195A Superconducting device including plural superconducting electrodes formed on a normal conductor 失效
标题翻译：超导装置包括形成在正常导体上的多个超导电极
公开(公告)号：US5442195A
公开(公告)日：1995-08-15
申请号：US136984
申请日：1993-10-18
申请人： Kazuo Saitoh , Toshikazu Nishino , Mutsuko Hatano
发明人： Kazuo Saitoh , Toshikazu Nishino , Mutsuko Hatano
IPC分类号： H01L39/22 , H01L27/18 , H01L39/24 , B05D5/12 , G11C11/44 , H01B12/00
CPC分类号： H01L27/18 , Y10S505/832
摘要： A superconducting device may include a superconducting weak link equipped with plural superconducting devices that are used as input-output terminals formed on the same plane and at least one current source for applying current to at least one of these superconducting electrodes. A superconducting device suitable for high integration can be realized as it enables structuring of a superconducting weak link 1 equipped with plural superconducting electrodes 101, 102, 103 and 104 that can be used as input-output terminals and changing symmetry of superconducting electrode arrangement through the form of a normal conductor 201 which is forming a superconducting weak link. In addition, when this superconducting device is used as a quasi-particle injection type device, a superconducting device with plural superconducting electrodes that can be used for a gate electrode, drain electrode or control electrode can be realized. Further, a superconducting device equipped with new functions (e.g. motion as a neuron device) which are capable of high integration can be realized by utilizing these characteristics. Furthermore, being a proximity effect type, superconducting weak link has an advantage of realizing an ultra highspeed, low electricity consuming switching device.
摘要翻译：超导装置可以包括配备有多个超导装置的超导弱连接器，所述多个超导装置用作形成在同一平面上的输入 - 输出端子和用于向这些超导电极中的至少一个施加电流的至少一个电流源。可以实现适用于高集成度的超导装置，因为它能够构成配备有可用作输入 - 输出端子的多个超导电极101,102,103和104的超导弱连接件1，并且通过所述超导电极装置改变超导电极装置的对称性形成超导弱连接的正常导体201的形式。此外，当该超导装置用作准粒子注入型装置时，可以实现具有可用于栅电极，漏电极或控制电极的多个超导电极的超导装置。此外，可以通过利用这些特性来实现配备有能够高集成度的新功能（例如作为神经元装置的运动）的超导装置。此外，作为接近效应型，超导弱连接具有实现超高速，低耗电开关器件的优点。

64. 发明授权

US4866373A Superconducting current detecting circuit employing DC flux parametron circuit 失效
标题翻译：采用直流通量参数电路的超导电流检测电路
公开(公告)号：US4866373A
公开(公告)日：1989-09-12
申请号：US291338
申请日：1988-12-28
申请人： Yutaka Harada , Eiichi Goto , Ushio Kawabe , Nobuo Miyamoto , Hideaki Nakane , Mutsuko Hatano
发明人： Yutaka Harada , Eiichi Goto , Ushio Kawabe , Nobuo Miyamoto , Hideaki Nakane , Mutsuko Hatano
IPC分类号： G01R17/06 , G01R19/00 , G01R19/15 , G01R19/257
CPC分类号： G01R19/257 , G01R17/06 , G01R19/0092 , G01R19/15 , Y10S505/827 , Y10S505/845
摘要： A superconducting current detecting circuit which comprises a reference current generation circuit for generating a reference current and a DC flux parametron circuit for comparing an input current to be detected with the reference current to thereby produce pulses in synchronism with an input excitation signal, the number of the pulses being varied in accordance with a difference between the input current and the reference current, the pulses having positive or negative values depending on the polarity of the difference, the reference current generation circuit having means for increasing or decreasing the reference current by a quantity corresponding to the number of the pulses in response to the polarity of the pulses so that reference current generation circuit produces the reference current which agrees with the input current.
摘要翻译：一种超导电流检测电路，包括用于产生参考电流的参考电流产生电路和用于将待检测的输入电流与参考电流进行比较的DC通量参数电路，从而产生与输入激励信号同步的脉冲，所述脉冲根据所述输入电流和所述参考电流之间的差异而变化，所述脉冲具有取决于所述差的极性的正值或负值，所述参考电流产生电路具有用于将所述参考电流增加或减少量的装置对应于响应于脉冲极性的脉冲数，使得参考电流产生电路产生与输入电流一致的参考电流。

65. 发明授权

US08242505B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08242505B2
公开(公告)日：2012-08-14
申请号：US12003462
申请日：2007-12-26
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
摘要翻译：提供了一种用于提高像素的开口率的显示装置。在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极，透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

66. 发明授权

US08199269B2 Method for manufacturing thin film transistors 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US08199269B2
公开(公告)日：2012-06-12
申请号：US12216445
申请日：2008-07-03
申请人： Takashi Hattori , Mutsuko Hatano
发明人： Takashi Hattori , Mutsuko Hatano
IPC分类号： G02F1/136 , G02F1/1333 , H01L21/00 , H01L21/469
CPC分类号： H01L27/1266 , G02F1/133305 , H01L27/1214 , H01L27/1218 , H01L29/78603
摘要： A method for manufacturing a thin film transistor including a step of forming a polymer film (a) to a layer above a support substrate, a step of forming a semiconductor element above the polymer film (a), and a step of separating the support substrate from the polymer film (a) formed with the semiconductor element in which the polymer film (a) has a thickness of 1 μm or more and 30 μm or less, a transmittance of 80% or higher to a visible light at a wavelength of 400 nm or more and 800 nm or less, a 3 wt % loss temperature of 300° C. or higher, and a melting point of 280° C. or higher.
摘要翻译：一种制造薄膜晶体管的方法，包括在支撑基板上形成聚合物膜（a）的步骤，在聚合物膜（a）上方形成半导体元件的步骤，以及分离支撑基板从聚合物膜（a）的厚度为1μm以上且30μm以下的半导体元件形成的聚合物膜（a）的透射率为波长400的可见光的80％以上以上且800nm以下，3重量％的损失温度为300℃以上，熔点为280℃以上。

67. 发明申请

US20120068287A1 Highly Sensitive Photo-Sensing Element and Photo-Sensing Device Using the Same 有权
标题翻译：高灵敏感光元件和使用它的感光元件
公开(公告)号：US20120068287A1
公开(公告)日：2012-03-22
申请号：US13236338
申请日：2011-09-19
申请人： Mitsuharu Tai , Hideo Sato , Mutsuko Hatano , Masayoshi Kinoshita
发明人： Mitsuharu Tai , Hideo Sato , Mutsuko Hatano , Masayoshi Kinoshita
IPC分类号： H01L31/0224
CPC分类号： H01L27/1214 , G09G2360/14 , H01L31/1136
摘要： According to the present invention, a highly sensitive photo-sensing element and a sensor driver circuit are prepared by planer process on an insulating substrate by using only polycrystalline material. Both the photo-sensing element and the sensor driver circuit are made of polycrystalline silicon film. As the photo-sensing element, a photo transistor is formed by using TFT, which comprises a first electrode 11 prepared on an insulating substrate 10, a photoelectric conversion region 14 and a second electrode 12, and a third electrode 13 disposed above the photoelectric conversion region 14. An impurity layer positioned closer to an intrinsic layer (density of active impurities is 1017 cm−3 or lower) is provided on the regions 15 and 16 on both sides under the third electrode 13 or on one of the regions 15 or 16 on one side.
摘要翻译：根据本发明，通过仅使用多晶材料，通过平面法在绝缘基板上制备高灵敏度的感光元件和传感器驱动电路。感光元件和传感器驱动电路都由多晶硅膜制成。作为感光元件，通过使用TFT形成光电晶体管，该TFT包括在绝缘基板10上制备的第一电极11，光电转换区域14和第二电极12以及设置在光电转换器之上的第三电极13 在第三电极13下方的区域15和16上，或者在区域15或16中的一个区域上设置位于更接近本征层（活性杂质的密度为1017cm-3或更低）的杂质层。在一边。

68. 发明申请

US20110049508A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20110049508A1
公开(公告)日：2011-03-03
申请号：US12843977
申请日：2010-07-27
申请人： Tetsufumi KAWAMURA , Hiroyuki Uchiyama , Hironori Wakana , Mutsuko Hatano
发明人： Tetsufumi KAWAMURA , Hiroyuki Uchiyama , Hironori Wakana , Mutsuko Hatano
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78696
摘要： In a manufacturing method for thin film transistors, the following procedure is taken: a sacrifice layer comprised of a metal oxide semiconductor is formed over a conductive layer comprised of a metal oxide semiconductor; a metal film is formed over the sacrifice layer; the metal film is processed by dry etching; and the portion of the sacrifice layer exposed by this dry etching is subjected to wet etching.
摘要翻译：在薄膜晶体管的制造方法中，采取以下步骤：在由金属氧化物半导体构成的导电层上形成由金属氧化物半导体构成的牺牲层; 在牺牲层上形成金属膜; 金属膜通过干蚀刻加工; 并且通过该干蚀刻暴露的牺牲层的部分进行湿蚀刻。

69. 发明申请

US20090101895A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20090101895A1
公开(公告)日：2009-04-23
申请号：US12253257
申请日：2008-10-17
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano
IPC分类号： H01L27/088
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733
摘要： A display device includes a pixel including: a gate line; a gate insulating film; a substrate; a data line; a pixel electrode; a semiconductor layer formed on the gate line and the gate insulating film; a protective film formed on the data line, the pixel electrode, and the semiconductor layer; and a thin film transistor. A portion of the gate line also serves as a gate electrode of the thin film transistor. A portion of the data line also serves as a drain electrode of the thin film transistor. A portion of the pixel electrode also serves as a source electrode of the thin film transistor. The semiconductor layer is formed of an oxide semiconductor layer. The oxide semiconductor layer is directly connected to the drain electrode and the source electrode, and the data line and the pixel electrode are formed of different conductive films.
摘要翻译：显示装置包括：像素，包括：栅极线; 栅极绝缘膜; 底物; 数据线像素电极; 形成在栅极线和栅极绝缘膜上的半导体层; 形成在数据线上的保护膜，像素电极和半导体层; 和薄膜晶体管。栅极线的一部分也用作薄膜晶体管的栅电极。数据线的一部分也用作薄膜晶体管的漏电极。像素电极的一部分也用作薄膜晶体管的源电极。半导体层由氧化物半导体层形成。氧化物半导体层直接连接到漏电极和源电极，数据线和像素电极由不同的导电膜形成。

70. 发明授权

US07372110B2 Display with integral sound wave generation device 有权
标题翻译：具有积分声波发生装置的显示
公开(公告)号：US07372110B2
公开(公告)日：2008-05-13
申请号：US11771713
申请日：2007-06-29
申请人： Mutsuko Hatano
发明人： Mutsuko Hatano
IPC分类号： H01L49/00 , H01L29/786 , H04R23/00
CPC分类号： H01L27/12
摘要： A display housing a sound element and a driving circuit that may be built in on the same substrate as the display panel. Thin-film transistors PTFT constituting pixels and a sound wave generation device SPO1 having a laminated structure of a heat generation layer 700, a heat insulation layer 701 and a heat radiation layer 702 are formed on a thin-film transistor (TFT) substrate 500 on which polysilicon thin-film transistors PTFT are formed.
摘要翻译：一种显示器，其容纳可构建在与显示面板相同的基板上的声音元件和驱动电路。在薄膜晶体管（TFT）基板500上形成具有发热层700，隔热层701和散热层702的叠层结构的构成像素的薄膜晶体管PTFT和具有层叠结构的声波发生装置SPO 1 在其上形成多晶硅薄膜晶体管PTFT。

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