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1. 发明授权

US08139173B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US08139173B2
公开(公告)日：2012-03-20
申请号：US12216581
申请日：2008-07-08
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Mieko Matsumura
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Mieko Matsumura
IPC分类号： G02F1/133 , G02F1/1343
CPC分类号： G02F1/1368 , G02F1/136209 , G02F1/136227 , G02F2001/13613
摘要： A liquid crystal display, having an improved application of electric field to the molecules of liquid crystal, includes a substrate and a pixel array bonded to the surface of this substrate, and the pixel array includes at least a thin-film transistor and a pixel electrode connected with this thin-film transistor, and the pixel electrode is formed in a layer higher than the thin-film transistor in relation to the substrate.
摘要翻译：具有改善对液晶分子的电场应用的液晶显示器包括基板和与该基板的表面接合的像素阵列，像素阵列至少包括薄膜晶体管和像素电极与该薄膜晶体管连接，并且像素电极相对于衬底形成在比薄膜晶体管高的层中。

2. 发明授权

US07977675B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07977675B2
公开(公告)日：2011-07-12
申请号：US12423053
申请日：2009-04-14
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Hiroyuki Uchiyama
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Hiroyuki Uchiyama
IPC分类号： H01L29/12
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/127 , H01L29/7869
摘要： A metallic oxide semiconductor device with high performance and small variations. It is a field effect transistor using a metallic oxide film for the channel, which includes a channel region and a source region and comprises a drain region with a lower oxygen content than the channel region in the metallic oxide, in which the channel region exhibits semiconductor characteristics and the oxygen content decreases with depth below the surface.
摘要翻译：具有高性能和小变化的金属氧化物半导体器件。它是一种使用金属氧化物膜作为沟道的场效应晶体管，其包括沟道区和源极区，并且包括具有比金属氧化物中的沟道区更低的氧含量的漏区，其中沟道区表现出半导体特性和氧含量随着表面深度的减小而减小。

3. 发明授权

US07737517B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07737517B2
公开(公告)日：2010-06-15
申请号：US12253257
申请日：2008-10-17
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano
IPC分类号： H01L31/0232 , H01L31/103
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733
摘要： A display device includes a pixel including: a gate line; a gate insulating film; a substrate; a data line; a pixel electrode; a semiconductor layer formed on the gate line and the gate insulating film; a protective film formed on the data line, the pixel electrode, and the semiconductor layer; and a thin film transistor. A portion of the gate line also serves as a gate electrode of the thin film transistor. A portion of the data line also serves as a drain electrode of the thin film transistor. A portion of the pixel electrode also serves as a source electrode of the thin film transistor. The semiconductor layer is formed of an oxide semiconductor layer. The oxide semiconductor layer is directly connected to the drain electrode and the source electrode, and the data line and the pixel electrode are formed of different conductive films.
摘要翻译：显示装置包括：像素，包括：栅极线; 栅极绝缘膜; 底物; 数据线像素电极; 形成在栅极线和栅极绝缘膜上的半导体层; 形成在数据线上的保护膜，像素电极和半导体层; 和薄膜晶体管。栅极线的一部分也用作薄膜晶体管的栅电极。数据线的一部分也用作薄膜晶体管的漏电极。像素电极的一部分也用作薄膜晶体管的源电极。半导体层由氧化物半导体层形成。氧化物半导体层直接连接到漏电极和源电极，数据线和像素电极由不同的导电膜形成。

4. 发明申请

US20090261325A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090261325A1
公开(公告)日：2009-10-22
申请号：US12423053
申请日：2009-04-14
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Hiroyuki Uchiyama
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Hiroyuki Uchiyama
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/127 , H01L29/7869
摘要： A metallic oxide semiconductor device with high performance and small variations. It is a field effect transistor using a metallic oxide film for the channel, which includes a channel region and a source region and comprises a drain region with a lower oxygen content than the channel region in the metallic oxide, in which the channel region exhibits semiconductor characteristics and the oxygen content decreases with depth below the surface.
摘要翻译：具有高性能和小变化的金属氧化物半导体器件。它是一种使用金属氧化物膜作为沟道的场效应晶体管，其包括沟道区和源极区，并且包括具有比金属氧化物中的沟道区更低的氧含量的漏区，其中沟道区表现出半导体特性和氧含量随着表面深度的减小而减小。

5. 发明申请

US20090040411A1 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US20090040411A1
公开(公告)日：2009-02-12
申请号：US12216581
申请日：2008-07-08
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Mieko Matsumura
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Mieko Matsumura
IPC分类号： G02F1/1368
CPC分类号： G02F1/1368 , G02F1/136209 , G02F1/136227 , G02F2001/13613
摘要： A liquid crystal display, having an improved application of electric field to the molecules of liquid crystal, includes a substrate and a pixel array bonded to the surface of this substrate, and the pixel array includes at least a thin-film transistor and a pixel electrode connected with this thin-film transistor, and the pixel electrode is formed in a layer higher than the thin-film transistor in relation to the substrate.
摘要翻译：具有改善对液晶分子的电场应用的液晶显示器包括基板和与该基板的表面接合的像素阵列，像素阵列至少包括薄膜晶体管和像素电极与该薄膜晶体管连接，并且像素电极相对于衬底形成在比薄膜晶体管高的层中。

6. 发明授权

US08629451B2 Display device 有权
公开(公告)号：US08629451B2
公开(公告)日：2014-01-14
申请号：US13537462
申请日：2012-06-29
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.

7. 发明申请

US20120261668A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20120261668A1
公开(公告)日：2012-10-18
申请号：US13537462
申请日：2012-06-29
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L33/08
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
摘要翻译：提供了一种用于提高像素的开口率的显示装置。在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极，透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

8. 发明申请

US20110042667A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110042667A1
公开(公告)日：2011-02-24
申请号：US12838451
申请日：2010-07-17
申请人： Tetsufumi KAWAMURA , Hiroyuki Uchiyama , Hironori Wakana , Mutsuko Hatano , Takeshi Sato
发明人： Tetsufumi KAWAMURA , Hiroyuki Uchiyama , Hironori Wakana , Mutsuko Hatano , Takeshi Sato
IPC分类号： H01L29/24 , H01L21/34
CPC分类号： H01L29/7869
摘要： A method for manufacturing a thin film transistor (TFT) through a process including back exposure, in which oxide semiconductor is used for a channel layer; using an electrode over a substrate as a mask, negative resist is exposed to light from the back of the substrate; the negative resist except its exposed part is removed; and an electrode is shaped by etching a conductive film using the exposed part as an etching mask.
摘要翻译：一种通过包括反向曝光的工艺制造薄膜晶体管（TFT）的方法，其中将氧化物半导体用于沟道层; 使用基板上的电极作为掩模，负光刻胶从基板的背面暴露于光; 去除其外露部分的负光刻胶; 并且通过使用暴露部分作为蚀刻掩模蚀刻导电膜来成形电极。

9. 发明授权

US08314032B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08314032B2
公开(公告)日：2012-11-20
申请号：US12838451
申请日：2010-07-17
申请人： Tetsufumi Kawamura , Hiroyuki Uchiyama , Hironori Wakana , Mutsuko Hatano , Takeshi Sato
发明人： Tetsufumi Kawamura , Hiroyuki Uchiyama , Hironori Wakana , Mutsuko Hatano , Takeshi Sato
IPC分类号： H01L21/311
CPC分类号： H01L29/7869
摘要： A method for manufacturing a thin film transistor (TFT) through a process including back exposure, in which oxide semiconductor is used for a channel layer; using an electrode over a substrate as a mask, negative resist is exposed to light from the back of the substrate; the negative resist except its exposed part is removed; and an electrode is shaped by etching a conductive film using the exposed part as an etching mask.
摘要翻译：一种通过包括反向曝光的工艺制造薄膜晶体管（TFT）的方法，其中将氧化物半导体用于沟道层; 使用基板上的电极作为掩模，负光刻胶从基板的背面暴露于光; 去除其外露部分的负光刻胶; 并且通过使用暴露部分作为蚀刻掩模蚀刻导电膜来成形电极。

10. 发明申请

US20080169469A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20080169469A1
公开(公告)日：2008-07-17
申请号：US12003462
申请日：2007-12-26
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L29/04
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
摘要翻译：提供了一种用于提高像素的开口率的显示装置。在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极，透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

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