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    • 62. 发明授权
    • Passband filter having an asymmetrical filter response
    • 带通滤波器具有不对称滤波器响应
    • US06462631B2
    • 2002-10-08
    • US09783773
    • 2001-02-14
    • Paul BradleyRichard C. Ruby
    • Paul BradleyRichard C. Ruby
    • H03H958
    • H03H9/605
    • A filter, such as a transmit filter of a duplexer, includes an array of acoustic resonators that cooperate to establish an asymmetrically shaped filter response over a target frequency passband. The acoustic resonators are preferably film bulk acoustic resonators (FBARs). The filter response defines an insertion loss profile in which a minimum insertion loss within the target passband is located at or near a first end of the frequency passband, while the maximum insertion loss is located at or near the opposite end of the frequency passband. In the transmit filter embodiment, the minimum insertion loss is at or near the high frequency end of the filter response, which is tailored by selectively locating poles and zeros of the array of FBARs.
    • 诸如双工器的发射滤波器的滤波器包括声谐振器阵列,其协作以在目标频率通带上建立不对称形状的滤波器响应。 声谐振器优选为薄膜体声波谐振器(FBAR)。 滤波器响应定义了插入损耗曲线,其中目标通带内的最小插入损耗位于频率通带的第一端处或接近频率通带的第一端,而最大插入损耗位于或接近频率通带的相对端。 在发射滤波器实施例中,最小插入损耗处于或接近滤波器响应的高频端,其通过选择性地定位FBAR阵列的极点和零点来定制。
    • 63. 发明授权
    • Bulk acoustic resonator perimeter reflection system
    • 体声共振器周边反射系统
    • US06424237B1
    • 2002-07-23
    • US09746525
    • 2000-12-21
    • Richard C. RubyJohn D. Larson, IIIPaul D. Bradley
    • Richard C. RubyJohn D. Larson, IIIPaul D. Bradley
    • H03H915
    • H03H9/173H03H9/0211H03H9/02118H03H9/132Y10T29/42
    • A bulk acoustic resonator having a high quality factor is formed on a substrate having a depression formed in a top surface of the substrate. The resonator includes a first electrode, a piezoelectric material and a second electrode. The first electrode is disposed on the top surface of the substrate and extends beyond the edges of the depression by a first distance to define a first region therebetween. The piezoelectric material is disposed on the top surface of the substrate and over the first electrode, and the second electrode is disposed on the piezoelectric material. The second electrode includes a portion that is located above the depression. The portion of the second electrode that is located over the depression has at least one edge that is offset from a corresponding edge of the depression by a second distance to define a second region therebetween. The first and second regions have different impedances, as a result of the different materials located in the two regions. In addition, the first and second distances are approximately equal to a quarter-wavelength of a sound wave travelling laterally across the respective region, such that reflections off of the edges of the regions constructively interfere to maximize the reflectivity of the resonator.
    • 具有高质量因素的体声波谐振器形成在具有形成在基板的顶表面中的凹陷的基板上。 谐振器包括第一电极,压电材料和第二电极。 第一电极设置在衬底的顶表面上并且延伸超过凹陷的边缘第一距离以限定它们之间的第一区域。 压电材料设置在基板的顶表面上并在第一电极上方,第二电极设置在压电材料上。 第二电极包括位于凹部上方的部分。 位于凹部上方的第二电极的部分具有至少一个边缘,该边缘与凹陷的对应边缘偏移第二距离,以限定它们之间的第二区域。 由于位于两个区域的不同材料,第一和第二区域具有不同的阻抗。 此外,第一和第二距离近似等于横过各个区域横向移动的声波的四分之一波长,使得区域边缘的反射构造地干扰以最大化谐振器的反射率。
    • 64. 发明授权
    • Microcap wafer-level package
    • 微型晶圆级封装
    • US06265246B1
    • 2001-07-24
    • US09359844
    • 1999-07-23
    • Richard C. RubyTracy E. BellFrank S. GeefayYogesh M. Desai
    • Richard C. RubyTracy E. BellFrank S. GeefayYogesh M. Desai
    • H01L2144
    • B81C1/00301B81B2207/07B81C1/00484H01L2224/48463H01L2924/01013H01L2924/01029H01L2924/01078H01L2924/01079H01L2924/10253H01L2924/14H01L2924/00014H01L2924/00
    • A microcap wafer-level package is provided in which a micro device is connected to bonding pads on a base wafer. A peripheral pad on the base wafer encompasses the bonding pads and the micro device. A cap wafer has gaskets formed thereon using a thick photoresist, semiconductor photolithographic process. Bonding pad gaskets match the perimeters of the bonding pads and a peripheral pad gasket matches the peripheral pad on the base wafer. Wells are located inside the perimeters of the bond pad gaskets and are formed to a predetermined depth in the cap wafer. The cap wafer is then placed over the base wafer to cold weld bond the gaskets to the pads and form a hermetically sealed volume between the bonding pad gaskets and the peripheral pad gasket. The cap wafer is then thinned below the predetermined depth until the wells become through holes that provide access to the bonding pads inside the package, but outside the hermetically sealed volume, for connecting wires from a micro device utilizing system.
    • 提供了一种微型晶片级封装,其中微型器件连接到基片上的焊盘。 基底晶片上的外围焊盘包围接合焊盘和微型器件。 盖晶片使用厚的光致抗蚀剂,半导体光刻工艺在其上形成垫圈。 接合垫垫片与焊盘的周长相匹配,外围衬垫垫片与基底晶片上的外围焊盘相匹配。 孔位于接合垫垫片的周边内,并且形成在盖晶片中的预定深度。 然后将盖晶片放置在基底晶片上,以将焊垫冷却焊接到焊盘,并在焊盘垫片和外围焊盘垫圈之间形成气密密封的体积。 然后将盖晶片减薄到预定深度以下,直到阱变成通孔,其提供对封装内的接合焊盘的访问,但是在气密密封的体积外部,用于从微器件利用系统连接引线。
    • 65. 发明授权
    • RF-tags utilizing thin film bulk wave acoustic resonators
    • 使用薄膜体声波谐振器的RF标签
    • US5883575A
    • 1999-03-16
    • US909677
    • 1997-08-12
    • Richard C. RubyPhilip Canfield
    • Richard C. RubyPhilip Canfield
    • G08B13/24H03H9/17H03H9/58G08B13/14
    • H03H9/585G08B13/2414G08B13/2417G08B13/2422G08B13/2431G08B13/2437G08B13/2442H03H9/171H03H9/586
    • An RF tag having an antenna for receiving a RF signal having a frequency band between first and second frequencies and an acoustical resonator having a resonant frequency related to the first and second frequencies. The acoustical resonator has first and second electrodes that sandwich a layer of piezoelectric material. The antenna is connected to one of these electrodes. The resonator filters the signal received on the antenna. The filter can function either as a notch filter or as a bandpass filter. A resonator that acts as a bandpass filter includes a third electrode and a second layer piezoelectric material sandwiched between the second electrode and the third electrode. A frequency multiplier circuit may be incorporated in the RF tag to provide a response signal that occupies a frequency band at a frequency above the second frequency. In one embodiment of the present invention, multiple resonators having different resonant frequencies are utilized to generate a response code. In one embodiment of the present invention, the resonators are suspended on a support member over a substrate at locations on the support member which differ in thickness.
    • 一种具有用于接收具有第一和第二频率之间的频带的RF信号的天线的RF标签和具有与第一和第二频率相关的共振频率的声学谐振器。 声谐振器具有夹着压电材料层的第一和第二电极。 天线连接到这些电极之一。 谐振器对天线上接收到的信号进行滤波。 滤波器可以用作陷波滤波器或带通滤波器。 用作带通滤波器的谐振器包括夹在第二电极和第三电极之间的第三电极和第二层压电材料。 频率乘法器电路可并入RF标签中以提供以高于第二频率的频率占据频带的响应信号。 在本发明的一个实施例中,利用具有不同谐振频率的多个谐振器来产生响应码。 在本发明的一个实施例中,谐振器在不同厚度的支撑构件上的位置处悬挂在基板上的支撑构件上。
    • 67. 发明授权
    • Thermally actuated micromachined microwave switch
    • 热力微加工微波开关
    • US5467067A
    • 1995-11-14
    • US212544
    • 1994-03-14
    • Leslie A. FieldRichard C. Ruby
    • Leslie A. FieldRichard C. Ruby
    • H01H1/00H01H61/04H01P1/10H01H53/00
    • H01H61/04H01H1/0036H01P1/10H01H2061/006
    • An integration of a micromachined actuator and a signal transmission structure includes a thermal actuator on a side of a displaceable signal line opposite to a fixed signal line. The actuator includes first and second legs. The first leg has a cross-sectional area greater than the second leg, providing a differential in electrical resistance. As current is channeled through the legs, the second leg will elongate more and will deflect both of the legs. The deflection is in a direction to press the displaceable signal line into signal communication with the fixed signal line. Optionally, a thermally operated reset actuator can be positioned to provide a mechanical return of the displaceable signal line. In a preferred embodiment, a microwave transmission environment is provided.
    • 微加工致动器和信号传输结构的集成包括在与固定信号线相对的位移信号线的一侧上的热致动器。 致动器包括第一和第二腿。 第一支腿具有大于第二支腿的横截面积,提供电阻差。 当电流通过腿部引导时,第二条腿将伸长并且将使两条腿偏转。 偏转方向将可移动信号线按压到与固定信号线的信号通信。 可选地,热操作的复位致动器可以被定位成提供可移位信号线的机械返回。 在优选实施例中,提供微波传输环境。
    • 70. 发明授权
    • Capacitance detector for accelerometer and gyroscope and accelerometer and gyroscope with capacitance detector
    • 用于加速度计和陀螺仪的电容检测器,带电容检测器的加速度计和陀螺仪
    • US09069005B2
    • 2015-06-30
    • US13162883
    • 2011-06-17
    • Richard C. Ruby
    • Richard C. Ruby
    • G01P15/125G01P15/08G01C19/5776
    • G01P15/125G01C19/5776G01P15/0802G01P2015/0831
    • A capacitance-to-frequency converter is configured to convert a difference between first and second capacitances produced of a teeter-totter capacitive transducer as a result of a rotational force being applied to the teeter-totter capacitive transducer to a first signal having a first frequency that is a function of the rotational force, and to convert a sum of the first and second capacitances produced as a result of an acceleration force to a second signal having a second frequency that is a function of the acceleration force. The capacitance-to-frequency converter includes a first oscillator having a first oscillator frequency that changes in response to a change in the first capacitance; a second oscillator having a second oscillator frequency that changes in response to a change in the second capacitance; and a mixer having first and second mixer inputs connected outputs of the first and second oscillators.
    • 电容 - 频率转换器被配置为转换由跷跷板电容式换能器产生的第一和第二电容之间的差异,这是由于旋转力被施加到跷跷板电容换能器而具有第一频率的第一信号 这是旋转力的函数,并且将作为加速力的结果产生的第一和第二电容的和转换成具有作为加速力的函数的第二频率的第二信号。 电容 - 频率转换器包括具有响应于第一电容的变化而改变的第一振荡器频率的第一振荡器; 具有响应于所述第二电容的变化而改变的第二振荡器频率的第二振荡器; 以及具有连接第一和第二振荡器的输出的第一和第二混频器输入的混频器。