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61. 发明授权

US07378542B2 Precursors to fluoroalkanol-containing olefin monomers, and associated methods of synthesis and use 有权
公开(公告)号：US07378542B2
公开(公告)日：2008-05-27
申请号：US11844831
申请日：2007-08-24
申请人： Gregory Breyta , Richard Anthony DiPietro , Daniel Joseph Dawson
发明人： Gregory Breyta , Richard Anthony DiPietro , Daniel Joseph Dawson
IPC分类号： C07C69/013 , C07C35/14
CPC分类号： C07C69/653 , C07C31/42 , C07C35/48 , C07C35/52 , C07C69/65 , C07C2601/04 , C07C2601/08 , C07C2602/42
摘要： The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted α,β-unsaturated esters. The fluoroalkanol-substituted α,β-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors.

62. 发明授权

US06444408B1 High silicon content monomers and polymers suitable for 193 nm bilayer resists 有权
标题翻译：适用于193纳米双层抗蚀剂的高硅含量单体和聚合物
公开(公告)号：US06444408B1
公开(公告)日：2002-09-03
申请号：US09514212
申请日：2000-02-28
申请人： Phillip Joe Brock , Richard Anthony DiPietro , Donald Clifford Hofer , Ratnam Sooriyakumaran , Gregory Michael Wallraff
发明人： Phillip Joe Brock , Richard Anthony DiPietro , Donald Clifford Hofer , Ratnam Sooriyakumaran , Gregory Michael Wallraff
IPC分类号： G03F7027
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0382 , G03F7/0395 , G03F7/0758 , G11B5/3163
摘要： Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.
摘要翻译：在193nm下透明的含硅基团的可聚合单体; 和烯键式不饱和基团。来自这些单体的聚合物可以用于用化学放大的，辐射敏感的双层抗蚀剂形成亚100nm图像的方法。双层抗蚀剂设置在基板上，并且包括（i）包含辐射敏感酸产生器和（ii）有机底层的顶部成像层。双层抗蚀剂可用于集成电路的制造。

63. 发明授权

US06165678A Lithographic photoresist composition and process for its use in the manufacture of integrated circuits 失效
标题翻译：平版光刻胶组合物及其在制造集成电路中的应用
公开(公告)号：US06165678A
公开(公告)日：2000-12-26
申请号：US111558
申请日：1998-07-08
申请人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Thomas I. Wallow , Gregory Michael Wallraff
发明人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Thomas I. Wallow , Gregory Michael Wallraff
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： A novel radiation-sensitive lithographic photoresist composition is provided which has improved sensitivity and resolution. The composition comprises a photosensitive acid generator and an acrylate or methacrylate copolymer. The copolymer contains first monomeric units having polar pendant groups and second monomeric units containing photoacid-cleavable ester groups. The polar pendant groups preferably comprise C.sub.6 -C.sub.12 alicyclic substituents containing a polar moiety R*, wherein the alicyclic substituents are bound through a linker moiety to the polymer backbone. Other monomeric units may be included as well. A process for using the composition to generate resist images on a substrate, i.e., in the manufacture of integrated circuits or the like.
摘要翻译：提供了一种具有改进的灵敏度和分辨率的新型辐射敏感平版印刷光刻胶组合物。该组合物包含光敏酸产生剂和丙烯酸酯或甲基丙烯酸酯共聚物。共聚物含有具有极性侧基的第一单体单元和含有光可酸裂解酯基的第二单体单元。极性侧基优选包含含有极性部分R *的C6-C12脂环族取代基，其中脂环取代基通过连接体部分结合至聚合物主链。也可以包括其它单体单元。一种使用该组合物在基板上生成抗蚀剂图像，即集成电路等的制造方法。

64. 发明授权

US08759415B2 Aromatic vinyl ether based reverse-tone step and flash imprint lithography 有权
标题翻译：基于芳族乙烯基醚的反相色阶和闪光印迹光刻
公开(公告)号：US08759415B2
公开(公告)日：2014-06-24
申请号：US13564812
申请日：2012-08-02
申请人： Richard Anthony DiPietro , Mark Whitney Hart , Frances Anne Houle , Hiroshi Ito
发明人： Richard Anthony DiPietro , Mark Whitney Hart , Frances Anne Houle , Hiroshi Ito
IPC分类号： B41J2/16 , C08F2/46 , C08G61/04
CPC分类号： C08F2/50 , B82Y10/00 , B82Y40/00 , C08F216/125 , G03F7/0002 , G03F7/0045 , G03F7/038
摘要： A molding composition and a method of forming a pattern. The method includes forming on a substrate a molding layer of a molding composition of aromatic divinyl ethers; pressing the template into the molding layer, the template having a relief pattern, the molding layer filling voids in the relief pattern, the template not contacting the substrate; exposing the molding layer to actinic radiation, the actinic radiation converting the molding layer to a cured molding layer having thick and thin regions corresponding to the relief pattern; removing the template; filling the thin regions of the relief pattern with a backfill material; removing regions of the molding layer not protected by the backfill material to expose regions of the substrate; forming trenches in the exposed regions of the substrate; and removing any remaining molding layer and backfill material. A transfer layer may be used between the molding layer and the substrate.
摘要翻译：成型组合物和形成图案的方法。该方法包括在基材上形成芳族二乙烯基醚的模塑组合物的模塑层; 将模板压入成型层，模板具有浮雕图案，成型层在浮雕图案中填充空隙，模板不接触基板; 将成型层暴露于光化辐射，光化辐射将成型层转化成具有对应于浮雕图案的厚而薄的区域的固化模塑层; 删除模板; 用填充材料填充浮雕图案的薄区域; 除去未被回填材料保护的成型层的区域以暴露基底的区域; 在衬底的暴露区域中形成沟槽; 并移除任何剩余的成型层和回填材料。可以在模塑层和基材之间使用转移层。

65. 发明授权

US08262961B2 Aromatic vinyl ether based reverse-tone step and flash imprint lithography 有权
标题翻译：基于芳族乙烯基醚的反相色阶和闪光印迹光刻
公开(公告)号：US08262961B2
公开(公告)日：2012-09-11
申请号：US12055513
申请日：2008-03-26
申请人： Richard Anthony DiPietro , Mark Whitney Hart , Frances Anne Houle , Hiroshi Ito
发明人： Richard Anthony DiPietro , Mark Whitney Hart , Frances Anne Houle , Hiroshi Ito
IPC分类号： B29C41/20 , B29C41/22 , B29C59/02 , B29C59/16
CPC分类号： C08F2/50 , B82Y10/00 , B82Y40/00 , C08F216/125 , G03F7/0002 , G03F7/0045 , G03F7/038
摘要： A molding composition and a method of forming an pattern. The method includes forming on a substrate a molding layer of a molding composition of aromatic divinyl ethers; pressing the template into the molding layer, the template having a relief pattern, the molding layer filling voids in the relief pattern, the template not contacting the substrate; exposing the molding layer to actinic radiation, the actinic radiation converting the molding layer to a cured molding layer having thick and thin regions corresponding to the relief pattern; removing the template; filling the thin regions of the relief pattern with a backfill material; removing regions of the molding layer not protected by the backfill material to expose regions of the substrate; forming trenches in the exposed regions of the substrate; and removing any remaining molding layer and backfill material. A transfer layer may be used between the molding layer and the substrate.
摘要翻译：成型组合物和形成图案的方法。该方法包括在基材上形成芳族二乙烯基醚的模塑组合物的模塑层; 将模板压入成型层，模板具有浮雕图案，成型层在浮雕图案中填充空隙，模板不接触基板; 将成型层暴露于光化辐射，光化辐射将成型层转化成具有对应于浮雕图案的厚而薄的区域的固化模塑层; 删除模板; 用填充材料填充浮雕图案的薄区域; 除去未被回填材料保护的成型层的区域以暴露基底的区域; 在衬底的暴露区域中形成沟槽; 并移除任何剩余的成型层和回填材料。可以在模塑层和基材之间使用转移层。

66. 发明授权

US08168366B2 Low activation energy photoresist composition and process for its use 有权
标题翻译：低活化能光刻胶组合物及其使用方法
公开(公告)号：US08168366B2
公开(公告)日：2012-05-01
申请号：US12253072
申请日：2008-10-16
申请人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D Truong
发明人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D Truong
IPC分类号： G03F7/004 , G03F7/30 , C08F24/00
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/28 , C08F220/60 , G03F7/0046 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： The present invention relates to a radiation sensitive photoresist composition. The composition comprises a polymer comprising at least two monomers. The first monomer has an acid cleavable tertiary ester group. The second monomer is an acidic monomer. The acid cleavable ester group of the polymer has a surprisingly low activation energy which results in improved resist images in lithographic processes.
摘要翻译：本发明涉及一种辐射敏感光刻胶组合物。组合物包含包含至少两种单体的聚合物。第一单体具有酸可裂解的叔酯基。第二单体是酸性单体。聚合物的酸可裂解酯基具有惊人的低活化能，这导致光刻工艺中抗蚀剂图像的改善。

67. 发明授权

US08128832B2 Processes and materials for step and flash imprint lithography 有权
标题翻译：步进和闪光压印光刻的工艺和材料
公开(公告)号：US08128832B2
公开(公告)日：2012-03-06
申请号：US12051584
申请日：2008-03-19
申请人： Richard Anthony DiPietro , Mark Whitney Hart , Frances Anne Houle , Hiroshi Ito
发明人： Richard Anthony DiPietro , Mark Whitney Hart , Frances Anne Houle , Hiroshi Ito
IPC分类号： H01L21/302
CPC分类号： G03F7/0755 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0045
摘要： A method of forming an image. The method includes: a transfer layer on a substrate; forming on the transfer layer, an etch barrier layer; pressing a template having a relief pattern into the etch barrier layer; exposing the etch barrier layer to actinic radiation forming a cured etch barrier layer having thick and thin regions corresponding to the relief pattern; removing the template; removing the thin regions of the cured etch barrier layer; removing regions of the transfer layer not protected by the etch barrier layer; removing regions of the substrate not protected by the transfer layer and any remaining etch barrier layer; and removing remaining transfer layer. The transfer layer may be removed using a solvent, the etch barrier layer may include a release agent and an adhesion layer may be formed between the transfer layer and the etch barrier layer. A reverse tone process is also described.
摘要翻译：一种形成图像的方法。该方法包括：在基板上的转印层; 在转印层上形成蚀刻阻挡层; 将具有浮雕图案的模板压入蚀刻阻挡层中; 将蚀刻阻挡层暴露于形成具有对应于浮雕图案的厚和薄区域的固化蚀刻阻挡层的光化辐射; 删除模板; 去除固化的蚀刻阻挡层的薄区域; 除去未被蚀刻阻挡层保护的转移层的区域; 除去未被转移层保护的衬底的区域和任何剩余的蚀刻阻挡层; 并去除剩余的转移层。可以使用溶剂去除转移层，蚀刻阻挡层可以包括脱模剂，并且可以在转移层和蚀刻阻挡层之间形成粘合层。还描述了反向色调处理。

68. 发明申请

US20110008727A1 Low Activation Energy Photoresist Composition and Process for Its Use 有权
标题翻译：低激活能量光刻胶组合物及其使用方法
公开(公告)号：US20110008727A1
公开(公告)日：2011-01-13
申请号：US12253072
申请日：2008-10-16
申请人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong
发明人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong
IPC分类号： G03F7/20 , C08F32/08 , C08F24/00 , G03F7/004
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/28 , C08F220/60 , G03F7/0046 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： The present invention relates to a radiation sensitive photoresist composition. The composition comprises a polymer comprising at least two monomers. The first monomer has an acid cleavable tertiary ester group. The second monomer is an acidic monomer. The acid cleavable ester group of the polymer has a surprisingly low activation energy which results in improved resist images in lithographic processes.
摘要翻译：本发明涉及一种辐射敏感光刻胶组合物。组合物包含包含至少两种单体的聚合物。第一单体具有酸可裂解的叔酯基。第二单体是酸性单体。聚合物的酸可裂解酯基具有惊人的低活化能，这导致光刻工艺中抗蚀剂图像的改善。

69. 发明申请

US20090177017A1 Precursors to Fluoroalkanol-Containing Olefin Monomers, and Associated Methods of Synthesis and Use 有权
公开(公告)号：US20090177017A1
公开(公告)日：2009-07-09
申请号：US12402680
申请日：2009-03-12
申请人： Gregory Breyta , Richard Anthony DiPietro , Daniel Joseph Dawson
发明人： Gregory Breyta , Richard Anthony DiPietro , Daniel Joseph Dawson
IPC分类号： C07C31/44 , C07C31/42
CPC分类号： C07C69/653 , C07C31/42 , C07C35/48 , C07C35/52 , C07C69/65 , C07C2601/04 , C07C2601/08 , C07C2602/42
摘要： The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted α,β-unsaturated esters. The fluoroalkanol-substituted α,β-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors.

70. 发明申请

US20090036717A1 Precursors to Fluoroalkanol-Containing Olefin Monomers, and Associated Methods of Synthesis and Use 失效
公开(公告)号：US20090036717A1
公开(公告)日：2009-02-05
申请号：US12253039
申请日：2008-10-16
申请人： Gregory Breyta , Richard Anthony DiPietro , Daniel Joseph Dawson
发明人： Gregory Breyta , Richard Anthony DiPietro , Daniel Joseph Dawson
IPC分类号： C07C33/42
CPC分类号： C07C33/44 , C07C33/423 , C07C69/653 , C07C69/753 , C07C2601/10 , C07C2601/16 , C07C2602/42
摘要： The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted α,β-unsaturated esters. The fluoroalkanol-substituted α,β-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors.

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