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61. 发明授权

US07326942B2 Ion beam system and machining method 有权
标题翻译：离子束系统和加工方法
公开(公告)号：US07326942B2
公开(公告)日：2008-02-05
申请号：US11210732
申请日：2005-08-25
申请人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
发明人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
IPC分类号： H01J37/30 , H01J37/305 , H01J37/08
CPC分类号： H01J37/3056 , G01N1/32 , H01J27/10 , H01J37/09 , H01J2237/0458 , H01J2237/0835 , H01J2237/31745 , H01J2237/31749
摘要： There is a machining method which shortens a cross-section forming time by an ion beam, a machining method which shortens a machining time for separating a micro sample from a wafer, and an ion beam machining system. The ion beam machining system has a vacuum container containing a duoplasmatron, non-axially symmetric ion beam lens and stencil mask, wherein a micro sample is removed from a sample by an argon ion beam having a steep beam profile in a direction perpendicular to the cross-section. The cross-section observations for wafer inspection/defect analysis used in device manufacture can be obtained in a short time. Further, there is a inspection/analysis method which does not cause defects even if a sample is removed and a wafer is returned to the process.
摘要翻译：存在通过离子束缩短截面形成时间的加工方法，缩短用于从晶片分离微型样品的加工时间的加工方法以及离子束加工系统。离子束加工系统具有含有双质子，非轴对称的离子束透镜和模板掩模的真空容器，其中通过具有垂直于十字的方向的陡峭波束轮廓的氩离子束从样品中除去微量样品 -部分。用于器件制造的晶圆检查/缺陷分析的横截面观察可以在短时间内获得。此外，存在即使去除样品并且晶片返回到该过程也不会引起缺陷的检查/分析方法。

62. 发明申请

US20070112533A1 Method for failure analysis and system for failure analysis 有权
标题翻译：故障分析方法和故障分析系统
公开(公告)号：US20070112533A1
公开(公告)日：2007-05-17
申请号：US11648615
申请日：2007-01-03
申请人： Satoshi Tomimatsu , Hiroyasu Shichi , Muneyuki Fukuda , Kaoru Umemura
发明人： Satoshi Tomimatsu , Hiroyasu Shichi , Muneyuki Fukuda , Kaoru Umemura
IPC分类号： G06F19/00
CPC分类号： G05B23/0264 , H01J2237/208
摘要： After completion of an arbitrary device process, an apparatus for micro-sample extraction extracts a part of a wafer as a micro-sample of a size equal to or larger than a repetition pattern with a probe and places the extracted micro-sample to a micro-sample storage, and the micro-sample storage is stored into an apparatus for micro-sample storage. The wafer is subjected to a post process and an observation desired position is determined in response to a failure analysis requirement. After that, the micro-sample is unloaded from the micro-sample storage by an apparatus for additional processing of the micro-sample and is placed onto an observation sample holder. By performing an additional process in the observation desired position, a failure analysis sample is prepared, and analysis information obtained by an apparatus for failure analysis is output.
摘要翻译：在完成任意装置处理之后，用于微量样品提取的装置用探针提取一部分晶片作为等于或大于重复图案的尺寸的微量样品，并将提取的微量样品放置在微型样品存储，并且微量样品储存储存在用于微量样品储存的装置中。对晶片进行后处理，并且响应于故障分析要求确定观察期望位置。之后，通过用于微量样品的附加处理的装置从微量样品储存器中卸载微量样品，并将其放置在观察样品架上。通过在观察所需位置执行附加处理，准备故障分析样本，并输出通过故障分析装置得到的分析信息。

63. 发明授权

US07200506B2 Method for failure analysis and system for failure analysis 有权
公开(公告)号：US07200506B2
公开(公告)日：2007-04-03
申请号：US10339356
申请日：2003-01-10
申请人： Satoshi Tomimatsu , Hiroyasu Shichi , Muneyuki Fukuda , Kaoru Umemura
发明人： Satoshi Tomimatsu , Hiroyasu Shichi , Muneyuki Fukuda , Kaoru Umemura
IPC分类号： G01N37/00
CPC分类号： G05B23/0264 , H01J2237/208
摘要： After completion of an arbitrary device process, an apparatus for micro-sample extraction extracts a part of a wafer as a micro-sample of a size equal to or larger than a repetition pattern with a probe and places the extracted micro-sample to a micro-sample storage, and the micro-sample storage is stored into an apparatus for micro-sample storage. The wafer is subjected to a post process and an observation desired position is determined in response to a failure analysis requirement. After that, the micro-sample is unloaded from the micro-sample storage by an apparatus for additional processing of the micro-sample and is placed onto an observation sample holder. By performing an additional process in the observation desired position, a failure analysis sample is prepared, and analysis information obtained by an apparatus for failure analysis is output.

64. 发明申请

US20060284112A1 Apparatus and method for specimen fabrication 有权
公开(公告)号：US20060284112A1
公开(公告)日：2006-12-21
申请号：US11441016
申请日：2006-05-26
申请人： Satoshi Tomimatsu , Miyuki Takahashi , Hiroyasu Shichi , Muneyuki Fukuda
发明人： Satoshi Tomimatsu , Miyuki Takahashi , Hiroyasu Shichi , Muneyuki Fukuda
IPC分类号： G21G5/00
CPC分类号： H01J37/3056 , H01J2237/006 , H01J2237/31744 , H01J2237/31745
摘要： A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed.

65. 发明申请

US20060065854A1 Ion beam system and machining method 有权
标题翻译：离子束系统和加工方法
公开(公告)号：US20060065854A1
公开(公告)日：2006-03-30
申请号：US11210732
申请日：2005-08-25
申请人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
发明人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
IPC分类号： H01J37/08
CPC分类号： H01J37/3056 , G01N1/32 , H01J27/10 , H01J37/09 , H01J2237/0458 , H01J2237/0835 , H01J2237/31745 , H01J2237/31749
摘要： There is a machining method which shortens a cross-section forming time by an ion beam, a machining method which shortens a machining time for separating a micro sample from a wafer, and an ion beam machining system. The ion beam machining system has a vacuum container containing a duoplasmatron, non-axially symmetric ion beam lens and stencil mask, wherein a micro sample is removed from a sample by an argon ion beam having a steep beam profile in a direction perpendicular to the cross-section. The cross-section observations for wafer inspection/defect analysis used in device manufacture can be obtained in a short time. Further, there is a inspection/analysis method which does not cause defects even if a sample is removed and a wafer is returned to the process.
摘要翻译：存在通过离子束缩短截面形成时间的加工方法，缩短用于从晶片分离微型样品的加工时间的加工方法以及离子束加工系统。离子束加工系统具有含有双质子，非轴对称的离子束透镜和模板掩模的真空容器，其中通过具有垂直于十字的方向的陡峭波束轮廓的氩离子束从样品中除去微量样品 -部分。用于器件制造的晶圆检查/缺陷分析的横截面观察可以在短时间内获得。此外，存在即使去除样品并且晶片返回到该过程也不会引起缺陷的检查/分析方法。

66. 发明授权

US06977376B2 Method of prevention charging, and apparatus for charged particle beam using the same 有权
标题翻译：防止充电的方法，以及使用其的带电粒子束的装置
公开(公告)号：US06977376B2
公开(公告)日：2005-12-20
申请号：US10773330
申请日：2004-02-09
申请人： Muneyuki Fukuda , Hiroyasu Shichi , Satoshi Tomimatsu
发明人： Muneyuki Fukuda , Hiroyasu Shichi , Satoshi Tomimatsu
IPC分类号： G01N23/225 , G01Q10/00 , G01Q30/02 , G01Q30/20 , H01J37/02 , H01J37/20 , H01J37/28 , H01J37/305 , H01L21/66 , G01N23/00 , H01S1/00
CPC分类号： H01J37/28 , G01N23/225 , H01J37/026 , H01J37/3056
摘要： An apparatus for a charged particle beam has a charged particle source; a charged particle optical system for focusing and deflecting a charged particle beam emitted from the charged particle source; a detector for detecting secondary particles emitted from a sample irradiated with the charged particle beam; and a sample holder on which the sample is mounted. The apparatus has an electrode for preventing charging which is provided so as to be movable with respect to the surface of the sample holder, and a controller for the electrode for preventing charging, which controls a voltage to be applied to the electrode for preventing charging and the movement. Preventing the charging is performed by generating an induced current or a current between an area irradiated with the charged particle beam in the sample and the electrode for preventing charging.
摘要翻译：带电粒子束的装置具有带电粒子源; 用于聚焦和偏转从带电粒子源发射的带电粒子束的带电粒子光学系统; 用于检测从被照射的带电粒子束的样品发射的二次粒子的检测器; 和其上安装有样品的样品架。该装置具有用于防止充电的电极，其被设置为能够相对于样品保持器的表面移动，以及用于防止充电的电极的控制器，其控制施加到用于防止充电的电极的电压，以及运动。通过在样品中用带电粒子束照射的区域和用于防止充电的电极之间产生感应电流或电流来进行充电。

67. 发明授权

US06794663B2 Method and apparatus for specimen fabrication 有权
公开(公告)号：US06794663B2
公开(公告)日：2004-09-21
申请号：US10699853
申请日：2003-11-04
申请人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
发明人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
IPC分类号： G21G500
CPC分类号： G01N23/20 , B23K15/0006 , B23K15/0013 , G01N1/286 , H01J2237/3114 , H01J2237/31745
摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

68. 发明授权

US5877498A Method and apparatus for X-ray analyses 失效
标题翻译： X射线分析的方法和装置
公开(公告)号：US5877498A
公开(公告)日：1999-03-02
申请号：US893034
申请日：1997-07-15
申请人： Aritoshi Sugimoto , Yoshimi Sudo , Tokuo Kure , Ken Ninomiya , Katsuhiro Kuroda , Takashi Nishida , Hideo Todokoro , Yasuhiro Mitsui , Hiroyasu Shichi
发明人： Aritoshi Sugimoto , Yoshimi Sudo , Tokuo Kure , Ken Ninomiya , Katsuhiro Kuroda , Takashi Nishida , Hideo Todokoro , Yasuhiro Mitsui , Hiroyasu Shichi
IPC分类号： G01N23/225 , H01J37/256
CPC分类号： G01N23/2252 , H01J2237/2445 , H01J2237/2807
摘要： An X-ray analyzing method for inspecting opening states of fine holes comprises the steps of: irradiating a finely converged electron beam into a first fine hole, observing an X-ray emitted from the inside of said first fine hole in order to obtain an first X-ray analysis data about the residue substance existing at the bottom of said first fine hole; irradiating a finely converged electron beam into a second fine hole, observing an X-ray emitted from the inside of said second fine hole in order to obtain an second X-ray analysis data about the residue substance existing at the bottom of said second fine hole; and comparing said first X-ray analysis data with said second X-ray analysis data, forming a judgment as to whether or not a difference between said first and second analysis data is smaller than a predetermined threshold value and using an outcome of said judgment to determine the opening states of said first and second fine holes. The X-ray observations are carried out by detecting only the X-rays emitted within the angular range -.theta. to +.theta. where notation .theta. is an angle formed with a center axis of the irradiated electron beam and so defined that tan .theta. is equal to a/d whereas notations a and d are the radius and the depth of the fine holes.
摘要翻译：用于检查细孔的打开状态的X射线分析方法包括以下步骤：将精细会聚的电子束照射到第一细孔中，观察从所述第一细孔的内部发射的X射线，以获得第一细孔关于存在于所述第一细孔底部的残留物质的X射线分析数据; 将精细会聚的电子束照射到第二细孔中，观察从所述第二细孔的内部发射的X射线，以获得关于存在于所述第二细孔底部的残留物质的第二X射线分析数据 ; 以及将所述第一X射线分析数据与所述第二X射线分析数据进行比较，形成关于所述第一和第二分析数据之间的差是否小于预定阈值的判断，并且使用所述判断结果确定所述第一和第二细孔的打开状态。通过仅检测在角度范围θ至+θ内发射的X射线来进行X射线观察，其中符号θ是与照射的电子束的中心轴形成的角度，并且如此定义，tanθ等于 a / d，而符号a和d是细孔的半径和深度。

69. 发明授权

US5012109A Charged particle beam apparatus 失效
标题翻译：带电粒子束装置
公开(公告)号：US5012109A
公开(公告)日：1991-04-30
申请号：US378286
申请日：1989-07-11
申请人： Hiroyasu Shichi , Setsuo Nomura , Eisuke Mitani
发明人： Hiroyasu Shichi , Setsuo Nomura , Eisuke Mitani
IPC分类号： H01J37/147 , G01Q30/02 , G01Q80/00 , H01J37/244 , H01J37/252 , H01J37/256 , H01J37/26 , H01J37/28 , H01J37/30
CPC分类号： H01J37/265 , H01J37/256
摘要： A charged particle beam apparatus comprising a charged particle beam source(s) for generating an ion beam and an electron beam, a focusing lens system for finely focusing each of the generated ion beam and electron beam, a charged particle beam deflecting system for deflecting each of the focused ion beam and electron beam, and a specimen subjected to irradiation thereof with each of the focused ion beam and electron beam is provided with means for detecting the deviation of the irradiation positions of the ion beam and the electron beam on the specimen from each other and means for making the irradiation positions of the ion beam and the electron beam on the specimen coincident with each other on the basis of the result of detection of the deviation of the irradiation positions from each other.
摘要翻译：一种带电粒子束装置，包括用于产生离子束和电子束的带电粒子束源，用于精细聚焦每个所产生的离子束和电子束的聚焦透镜系统，用于偏转每一个的带电粒子束偏转系统聚焦离子束和电子束的照射样本和其中每个聚焦离子束和电子束照射的样本设置有用于检测离子束和电子束在样本上的照射位置的偏差的装置，彼此之间的离子束和电子束的照射位置彼此一致的装置，基于检测到照射位置彼此偏离的结果。

70. 发明授权

US4841143A Charged particle beam apparatus 失效
标题翻译：带电粒子束装置
公开(公告)号：US4841143A
公开(公告)日：1989-06-20
申请号：US160408
申请日：1988-02-25
申请人： Hifumi Tamura , Hiroyasu Shichi , Kaoru Umemura
发明人： Hifumi Tamura , Hiroyasu Shichi , Kaoru Umemura
IPC分类号： G01N23/225 , G01Q70/10 , H01J37/22 , H01J37/252 , H01J37/256
CPC分类号： H01J37/256 , H01J37/244 , H01J2237/2449 , H01J2237/2527
摘要： A charged particle beam apparatus is disclosed, which comprises a charged particle source; focusing means for focusing a charged particle beam emitted by the charged particle source on a sample and irradiating it therewith; deflecting means for deflecting the charged particle beam so as to scan the sample therewith; secondary ion separating means disposed approximately symmetrically with respect to the axis of the charged particle beam at the proximity of said sample and separating positive and negative secondary ions generated by the irradiation of the sample into positive and negative ions; and mass analyzers for analyzing the mass of the separated positive and negative secondary ions, respectively.
摘要翻译：公开了一种带电粒子束装置，其包括带电粒子源; 用于将由带电粒子源发射的带电粒子束聚焦在样品上并将其照射的聚焦装置; 用于使带电粒子束偏转以便用其扫描样品的偏转装置; 二次离子分离装置相对于所述样品附近的带电粒子束的轴线近似对称设置，并且将由样品照射产生的正和负二次离子分离成正离子和负离子; 以及用于分析分离的正负二次离子的质量的质量分析器。

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