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    • 64. 发明授权
    • CPP GMR and magnetostriction improvement by laminating Co90Fe10 free layer with thin Fe50Co50 layers
    • 通过层压具有薄Fe50Co50层的Co90Fe10自由层的CPP GMR和磁致伸缩改进
    • US07141314B2
    • 2006-11-28
    • US10786806
    • 2004-02-25
    • Kunliang ZhangMin LiRachid SbiaaSimon LiaoYue Liu
    • Kunliang ZhangMin LiRachid SbiaaSimon LiaoYue Liu
    • G11B5/39
    • G11B5/3903Y10T428/1121Y10T428/1143Y10T428/115
    • A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type and its method of formation are disclosed, the sensor including a novel laminated free layer having ultra-thin (less than 3 angstroms thickness) laminas of Fe50 Co50 (or any iron rich alloy of the form CoxFe1−x with x between 0.25 and 0.75) interspersed with thicker layers of Co90Fe10 and Cu spacer layers to produce a free layer with good coercivity, a coefficient of magnetostriction that can be varied between positive and negative values and a high GMR ratio, due to enhancement of the bulk scattering coefficient by the laminas. The configuration of the lamina and layers in periodic groupings allow the coefficient of magnetostriction to be finely adjusted and the coercivity and GMR ratio to be optimized. The sensor performance can be further improved by including layers of Cu and Fe50Co50 in the synthetic antiferromagnetic pinned layer.
    • 公开了合成自旋阀型的电流垂直平面(CPP)巨磁阻(GMR)传感器及其形成方法,该传感器包括具有超薄(小于3埃厚度)的新型层叠自由层, Fe O 50 Co 50(或任何形式为Fe x Fe 1-x x的任何富含铁的合金)的薄片与 x在0.25和0.75之间)散布有较厚层的Co 90 N 10 N 10和Cu间隔层,以产生具有良好矫顽力的自由层,可以变化的磁致伸缩系数 在正值和负值之间,高GMR比,由于片层散体系的增强。 周期性分组中的薄层和层的配置允许精细调节磁致伸缩系数,并优化矫顽力和GMR比。 通过在合成的反铁磁性钉扎层中包含Cu和Fe 50 Co 50层,可以进一步提高传感器性能。
    • 67. 发明授权
    • Motor assembly
    • 电机总成
    • US09148039B2
    • 2015-09-29
    • US13292419
    • 2011-11-09
    • Zhi Ping FuPo Lun ChengMin Li
    • Zhi Ping FuPo Lun ChengMin Li
    • H02K7/10H02K7/118
    • H02K7/118
    • A motor assembly includes a working part, a synchronous motor having a shaft, and a mechanical coupling joining the working part to the motor. The coupling has two driving teeth fixed relative to the shaft, two driven teeth fixed relative to the working part, and two middle members. The coupling provides a predetermined range of angular movement between the motor and the working part. The middle members are circumferentially distributed between the two driving teeth and between the two driven teeth, thereby each of the middle members is movable by the driving teeth to contact the driven teeth and provides an interference between a driving tooth and a driven tooth to drive the working part.
    • 电动机组件包括工作部件,具有轴的同步电动机和将工作部件连接到电动机的机械联轴器。 联轴器具有相对于轴固定的两个驱动齿,相对于工作部件固定的两个从动齿轮和两个中间部件。 联轴器提供电动机和工作部件之间的角度运动的预定范围。 中间构件周向地分布在两个驱动齿之间和两个从动齿之间,由此每个中间构件可通过驱动齿移动以接触从动齿,并且在驱动齿和从动齿之间提供干涉以驱动 工作部分
    • 69. 发明授权
    • Method for fabricating a high coercivity hard bias structure for magnetoresistive sensor
    • 用于制造用于磁阻传感器的高矫顽力硬偏置结构的方法
    • US09034149B2
    • 2015-05-19
    • US12387377
    • 2009-05-01
    • Min ZhengKunliang ZhangMin Li
    • Min ZhengKunliang ZhangMin Li
    • C23C14/58C23C14/14C23C14/02G01R33/09G11B5/31G11B5/39
    • C23C14/5833C23C14/025C23C14/14C23C14/5873G01R33/098G11B5/3163G11B5/3932
    • A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that includes a mildly etched seed layer and a hard bias (HB) layer on the etched seed layer. The HB layer may contain one or more HB sub-layers stacked on a lower sub-layer which contacts the etched seed layer. Each HB sub-layer is mildly etched before depositing another HB sub-layer thereon. The etch may be performed in an IBD chamber and creates a higher concentration of nucleation sites on the etched surface thereby promoting a smaller HB average grain size than would be realized with no etch treatments. A smaller HB average grain size is responsible for increasing Hcr in a CoPt HB layer to as high as 2500 to 3000 Oe. Higher Hcr is achieved without changing the seed layer or HB material and without changing the thickness of the aforementioned layers.
    • 公开了用于纵向偏置MR传感器中的自由层的硬偏置(HB)结构,其包括在蚀刻的种子层上的温和蚀刻的种子层和硬偏置(HB)层。 HB层可以包含堆叠在与蚀刻的种子层接触的下子层上的一个或多个HB子层。 每个HB子层在其上沉积另一个HB子层之前被轻度蚀刻。 蚀刻可以在IBD室中进行,并且在蚀刻表面上产生更高浓度的成核位点,从而促进比无蚀刻处理实现的更小的HB平均晶粒尺寸。 较小的HB平均粒径负责将CoPt HB层中的Hcr增加到高达2500至3000 Oe。 在不改变种子层或HB材料而不改变上述层的厚度的情况下实现更高的Hcr。