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61. 发明授权

US07501763B2 Gas discharge display panel 失效
标题翻译：气体放电显示面板
公开(公告)号：US07501763B2
公开(公告)日：2009-03-10
申请号：US10594145
申请日：2005-04-07
申请人： Jun Hashimoto , Masatoshi Kitagawa , Mikihiko Nishitani , Masaharu Terauchi , Shinichi Yamamoto
发明人： Jun Hashimoto , Masatoshi Kitagawa , Mikihiko Nishitani , Masaharu Terauchi , Shinichi Yamamoto
IPC分类号： H01J17/49
CPC分类号： H01J11/12 , H01J11/40
摘要： Provided is a gas discharge display panel that exhibits a favorable display performance by maintaining a wall charge retaining power, controlling discharge delay within a range adequate for optimal image display, and reducing the discharge starting voltage at comparatively low cost. Also provided is a PDP that exhibits more reliability with enhanced display quality by further improving the secondary electron emission factor γ compared to conventional cases and lowering the discharge starting voltage to widen the driving margin. In addition, provided is a manufacturing method of a gas discharge display panel, by which the manufacturing cost lowers by reduction of the exhaustion time in the sealing exhaustion process, and by which the driving circuit cost is reduced. In the present invention, the protective layer contains, with respect to a MgO content of the protective layer, Si in a range of 20 mass ppm to 5000 mass ppm inclusive and H in a range of 300 mass ppm to 10000 mass ppm inclusive.
摘要翻译：提供一种气体放电显示面板，其通过保持壁电荷保持功率而显示良好的显示性能，将放电延迟控制在适于最佳图像显示的范围内，并且以相对低的成本降低放电启动电压。还提供了一种PDP，其通过与常规情况相比进一步改善二次电子发射因子γ并降低放电起始电压以扩大驱动裕度，显示出具有增强的显示质量的更高的可靠性。此外，提供了一种气体放电显示面板的制造方法，通过减少密封耗尽处理中的耗尽时间，降低制造成本，降低驱动电路成本。在本发明中，保护层相对于保护层的MgO含量，包含在20质量ppm〜5000质量ppm的范围内的Si，在300质量ppm〜10000质量ppm的范围内包含H。

62. 发明授权

US07432656B2 Plasma display panel and method for manufacturing same 失效
标题翻译：等离子显示面板及其制造方法
公开(公告)号：US07432656B2
公开(公告)日：2008-10-07
申请号：US10533605
申请日：2003-11-12
申请人： Yukihiro Morita , Masatoshi Kitagawa , Kiichiro Oishi , Mikihiko Nishitani
发明人： Yukihiro Morita , Masatoshi Kitagawa , Kiichiro Oishi , Mikihiko Nishitani
IPC分类号： H01J5/06
CPC分类号： H01J11/40 , H01J9/02 , H01J11/12
摘要： A plasma display panel in which a first substrate having a protective layer formed thereon opposes a second substrate across a discharge space, with the substrates being sealed around a perimeter thereof. At a surface of the protective layer, first and second materials of different electron emission properties are exposed to the discharge space, with at least one of the materials existing in a dispersed state. The first and second materials may be first and second crystals, and the second crystal may be dispersed throughout the first crystal.
摘要翻译：一种等离子体显示面板，其中形成有保护层的第一基板横跨放电空间与第二基板相对，基板围绕其周边被密封。在保护层的表面上，具有不同电子发射特性的第一和第二材料暴露于放电空间，其中至少一种材料以分散状态存在。第一和第二材料可以是第一和第二晶体，并且第二晶体可以分散在整个第一晶体中。

63. 发明申请

US20080019002A1 CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, AND PHASE SHIFTER 失效
标题翻译：结晶装置，结晶方法和相位改变
公开(公告)号：US20080019002A1
公开(公告)日：2008-01-24
申请号：US11861885
申请日：2007-09-26
申请人： Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： G02B27/00
CPC分类号： H01L29/78675 , B23K26/066 , B23K26/073 , B23K26/0734 , G02B5/02 , G02B5/3083 , G03F1/28 , G03F1/34 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L29/66757 , Y10T117/10
摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.
摘要翻译：结晶装置包括：向非单晶半导体膜施加用于结晶的照明光的照明系统;以及移相器，其包括设置成形成直边界的第一和第二区域，并将来自照明系统的照明光透过第一相位相位差，并且对照明光进行相位调制，以提供具有光强度落在包含对应于边界的轴的非单晶半导体膜的区域中的反峰值图案的光强度分布。移相器还包括从边界延伸到第一和第二区域中的至少一个区域的小区域，并相对于第一和第二区域中的至少一个透射照明光第二相位延迟。

64. 发明申请

US20070096103A1 SEMICONDUCTOR DEVICE, ANNEALING METHOD, ANNEALING APPARATUS AND DISPLAY APPARATUS 审中-公开
标题翻译：半导体器件，退火方法，退火设备和显示器
公开(公告)号：US20070096103A1
公开(公告)日：2007-05-03
申请号：US11612768
申请日：2006-12-19
申请人： Masayuki Jyumonji , Masakiyo Matsumura , Yoshinobu Kimura , Mikihiko Nishitani , Masato Hiramatsu , Yukio Taniguchi , Fumiki Nakano , Hiroyuki Ogawa
发明人： Masayuki Jyumonji , Masakiyo Matsumura , Yoshinobu Kimura , Mikihiko Nishitani , Masato Hiramatsu , Yukio Taniguchi , Fumiki Nakano , Hiroyuki Ogawa
IPC分类号： H01L29/04
CPC分类号： B23K26/04 , B23K26/066 , B23K26/067 , B23K26/073 , B23K26/705 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.
摘要翻译：根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。

65. 发明授权

US07186602B2 Laser annealing method 有权
标题翻译：激光退火方法
公开(公告)号：US07186602B2
公开(公告)日：2007-03-06
申请号：US11041413
申请日：2005-01-25
申请人： Masayuki Jyumonji , Masakiyo Matsumura , Yoshinobu Kimura , Mikihiko Nishitani , Masato Hiramatsu , Yukio Taniguchi , Fumiki Nakano , Hiroyuki Ogawa
发明人： Masayuki Jyumonji , Masakiyo Matsumura , Yoshinobu Kimura , Mikihiko Nishitani , Masato Hiramatsu , Yukio Taniguchi , Fumiki Nakano , Hiroyuki Ogawa
IPC分类号： H01L21/84 , H01L21/324
CPC分类号： B23K26/04 , B23K26/066 , B23K26/067 , B23K26/073 , B23K26/705 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.
摘要翻译：根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。

66. 发明授权

US07101436B2 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display 失效
标题翻译：结晶装置，结晶装置中使用的光学构件，结晶方法，薄膜晶体管的制造方法以及显示器的矩阵电路基板的制造方法
公开(公告)号：US07101436B2
公开(公告)日：2006-09-05
申请号：US10603821
申请日：2003-06-26
申请人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： C30B29/16
CPC分类号： G03B21/56 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A crystallization apparatus includes an optical illumination system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an inverse peak type light intensity distribution including a minimum light intensity in a point corresponding to a phase shift portion of the phase shift mask to produce a crystallized semiconductor film. A wavefront dividing element is disposed on a light path between the optical illumination system and the phase shift mask. The wavefront dividing element wavefront-divides the light beam supplied from the optical illumination system into a plurality of light beams, and condenses the wavefront-divided light beams in the corresponding phase shift portion or in the vicinity of the portion.
摘要翻译：结晶装置包括：光照射系统，用于照射相移掩模，并且对具有反相峰值型光强度分布的光束照射非晶半导体膜，所述光束具有相对于相的相移部分的点的最小光强度移位掩模以产生结晶半导体膜。波前分割元件设置在光学照明系统和相移掩模之间的光路上。波前分割元件将从光学照明系统提供的光束前后分割为多个光束，并将波前划分的光束聚集在相应的相移部分或该部分附近。

67. 发明授权

US07087505B2 Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method of the same 有权
公开(公告)号：US07087505B2
公开(公告)日：2006-08-08
申请号：US10755303
申请日：2004-01-13
申请人： Yoshinobu Kimura , Masakiyo Matsumura , Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Fumiki Nakano
发明人： Yoshinobu Kimura , Masakiyo Matsumura , Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Fumiki Nakano
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L29/66757 , H01L29/78675
摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.

68. 发明申请

US20060065185A1 Crystallization apparatus, crystallization method, and phase shifter 失效
公开(公告)号：US20060065185A1
公开(公告)日：2006-03-30
申请号：US11224014
申请日：2005-09-13
申请人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： C30B23/00 , C30B28/12 , C30B28/14 , C30B25/00
CPC分类号： H01L29/78675 , B23K26/066 , B23K26/073 , B23K26/0734 , G02B5/02 , G02B5/3083 , G03F1/28 , G03F1/34 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L29/66757 , Y10T117/10
摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

69. 发明授权

US06987035B2 Method and apparatus for forming crystallized semiconductor layer, and method for manufacturing semiconductor apparatus 失效
标题翻译：用于形成结晶半导体层的方法和装置，以及半导体装置的制造方法
公开(公告)号：US06987035B2
公开(公告)日：2006-01-17
申请号：US10857941
申请日：2004-06-02
申请人： Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Yoshinobu Kimura
发明人： Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Yoshinobu Kimura
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/2026 , H01L29/66772
摘要： A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray the non-single-crystal semiconductor layer having the crystal seed formed therein to allow a crystal to laterally grow from the crystal seed in the non-single-crystal semiconductor layer, irradiation of the energy ray is carried out by positioning to at least a part of the crystal seed an area having a minimum intensity value of the energy ray, the energy ray having a confirmation that an area having a maximum intensity value of the energy ray is continuously reduced to the area having the minimum intensity value in an irradiated surface.
摘要翻译：一种形成结晶化半导体层的方法包括制备其中形成至少一个晶种的非单晶半导体层，并且用能量线照射其中形成晶种的非单晶半导体层以允许在非单晶半导体层中从晶种横向生长的晶体，通过将至少一部分晶种定位到晶种的至少一部分，进行能量射线的最小强度值的区域的照射，能量射线确认具有能量射线的最大强度值的区域连续地减少到照射表面中具有最小强度值的区域。

70. 发明申请

US20050048383A1 Crystallization apparatus and crystallization method 失效
标题翻译：结晶装置和结晶方法
公开(公告)号：US20050048383A1
公开(公告)日：2005-03-03
申请号：US10958396
申请日：2004-10-06
申请人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： B23K26/06 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L31/036 , G21K5/10 , H01L29/04 , G03F9/00 , H01J37/08
CPC分类号： H01L21/02678 , B23K26/066 , H01L21/2026 , H01L21/268 , H01L29/66757 , H01L29/78675 , Y10S117/90 , Y10S117/904 , Y10S117/905 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.
摘要翻译：结晶装置包括照射相移掩模的照明系统和布置在相移掩模和半导体膜之间的光路中的成像光学系统。用对应于相移部分的部分的光强度最低的具有反相峰值图案的光强度分布的光束照射半导体膜，以形成结晶的半导体膜。成像光学系统被定位为将相移掩模和半导体膜光学共轭，并且具有对应于给定波长范围的像差，以形成中间部分没有强度波动的反向峰值图案的光强度分布。

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