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61. 发明申请

US20060109560A1 Method of determining lens materials for a projection exposure apparatus 有权
标题翻译：确定投影曝光装置的透镜材料的方法
公开(公告)号：US20060109560A1
公开(公告)日：2006-05-25
申请号：US11181694
申请日：2005-07-14
申请人： Vladimir Kamenov , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc
发明人： Vladimir Kamenov , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc
IPC分类号： G02B3/00
CPC分类号： G03F7/70891 , G02B1/02 , G02B1/08 , G02B17/0812 , G02B17/0892 , G03F7/70966
摘要： A method of determining materials of lenses contained in an optical system of a projection exposure apparatus is described. First, for each lens of a plurality of the lenses, a susceptibility factor KLT/LH is determined. This factor is a measure of the susceptibility of the respective lens to deteriorations caused by at least one of lifetime effects and lens heating effects. Then a birefringent fluoride crystal is selected as a material for each lens for which the susceptibility factor KLT/LH is above a predetermined threshold. Theses lenses are assigned to a first set of lenses. For these lenses, measures are determined for reducing adverse effects caused by birefringence inherent to the fluoride crystals.
摘要翻译：描述了确定投影曝光装置的光学系统中所包含的透镜的材料的方法。首先，对于多个透镜的每个透镜，确定敏感度因子K LT / LH 。该因子是由寿命效应和透镜加热效果中的至少一种引起的各透镜对恶化的敏感性的量度。然后选择双折射氟化物晶体作为敏感度因子K LT / LH <>高于预定阈值的每个透镜的材料。这些镜头被分配到第一组透镜。对于这些透镜，确定了减少由氟化物晶体固有的双折射引起的不利影响的措施。

62. 发明授权

US09086637B2 Method for stress-adjusted operation of a projection exposure system and corresponding projection exposure system 有权
标题翻译：投影曝光系统和相应投影曝光系统的应力调整操作方法
公开(公告)号：US09086637B2
公开(公告)日：2015-07-21
申请号：US13590673
申请日：2012-08-21
申请人： Bernhard Kneer , Markus Deguenther , Toralf Gruner
发明人： Bernhard Kneer , Markus Deguenther , Toralf Gruner
IPC分类号： G03B27/54 , G03B27/42 , G03F7/20
CPC分类号： G03F7/70191 , G03F7/70116 , G03F7/70341 , G03F7/70558 , G03F7/7085
摘要： A projection exposure system and a method for operating a projection exposure system for microlithography with an illumination system are disclosed. The illumination system includes at least one variably adjustable pupil-defining element. The illumination stress of at least one optical element of the projection exposure system is determined automatically in the case of an adjustment of the at least one variably adjustable pupil-defining element. From the automatically determined illumination stress, the maximum radiant power of the light source is set or determined and/or in which an illumination system is provided with which different illumination settings can be made. Usage of the projection exposure system is recorded and, from the history of the usage, at least one state parameter of at least one optical element of the projection exposure system is determined.
摘要翻译：公开了一种用于利用照明系统操作用于微光刻的投影曝光系统的投影曝光系统和方法。所述照明系统包括至少一个可变地调整的光瞳限定元件。在调整至少一个可变瞳孔限定元件的情况下，自动确定投影曝光系统的至少一个光学元件的照明应力。根据自动确定的照明应力，设置或确定光源的最大辐射功率，和/或其中提供可以进行不同照明设置的照明系统。记录投影曝光系统的使用，并且根据使用历史确定投影曝光系统的至少一个光学元件的至少一个状态参数。

63. 发明授权

US08325323B2 Method and system for correcting image changes 有权
标题翻译：用于校正图像变化的方法和系统
公开(公告)号：US08325323B2
公开(公告)日：2012-12-04
申请号：US12361842
申请日：2009-01-29
申请人： Olaf Conradi , Toralf Gruner
发明人： Olaf Conradi , Toralf Gruner
IPC分类号： G03F7/20
CPC分类号： G03F7/70891 , G03F7/70258
摘要： The disclosure relates to a method for compensating image errors, generated by intensity distributions in optical systems, such as in projection lens arrays of microlithography systems, and to respective optical systems, such as projection lens arrays of microlithography systems.
摘要翻译：本公开涉及一种用于补偿由光学系统中的强度分布产生的图像误差的方法，例如在微光刻系统的投影透镜阵列中，以及相应的光学系统，例如微光刻系统的投影透镜阵列。

64. 发明申请

US20110075121A1 CATADIOPTRIC PROJECTION OBJECTIVE 有权
标题翻译：目标投影目标
公开(公告)号：US20110075121A1
公开(公告)日：2011-03-31
申请号：US12748862
申请日：2010-03-29
申请人： Alexander Epple , Toralf Gruner , Ralf Mueller
发明人： Alexander Epple , Toralf Gruner , Ralf Mueller
IPC分类号： G03B27/72 , G02B17/06
CPC分类号： G02B13/143 , G02B17/0892 , G03F7/70225
摘要： Catadioptric projection objective (1) for microlithography for imaging an object field (3) in an object plane (5) onto an image field (7) in an image plane (9), including a first partial objective (11) imaging the object field onto a first real intermediate image (13), a second partial objective (15) imaging the first intermediate image onto a second real intermediate image (17) and a third partial objective (19) imaging the second intermediate image onto the image field (7). The second partial objective (15) has exactly one concave mirror (21) and at least one lens (23). The minimum distance between an optically utilized region of the concave mirror (21) and an optically utilized region of a surface (25)—facing the concave mirror—of a lens (23) adjacent to the concave mirror is greater than 10 mm.
摘要翻译：用于微光刻的反折射投影物镜（1），用于将物平面（5）中的物场（3）成像到图像平面（9）中的图像场（7），包括对物场进行成像的第一部分物镜（11）到第一实际中间图像（13），将第一中间图像成像到第二实际中间图像（17）上的第二部分目标（15）和将第二中间图像成像到图像场（7）上的第三部分目标（19））。第二部分物镜（15）具有正好一个凹面镜（21）和至少一个透镜（23）。凹面镜（21）的光学利用区域与与凹面镜相邻的透镜（23）的凹面镜的表面（25）的光学利用区域之间的最小距离大于10mm。

65. 发明申请

US20100201960A1 OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
标题翻译：微波投影曝光装置的光学系统
公开(公告)号：US20100201960A1
公开(公告)日：2010-08-12
申请号：US12765285
申请日：2010-04-22
申请人： Joerg Tschischgale , Toralf Gruner
发明人： Joerg Tschischgale , Toralf Gruner
IPC分类号： G03B27/68 , G01B9/00 , G01B9/02 , G03B27/54
CPC分类号： G03F7/70591 , G03B13/00 , G03F7/70266
摘要： In a method for improving imaging properties of an illumination system or a projection objective of a microlithographic projection exposure apparatus, which comprises an optical element having a surface, the shape of the surface is measured directly at various points. To this end, a measuring beam is directed on the points, and the reflected or refracted beam is measured, e.g. using an interferometer. Based on deviations of the measured shape from a target shape, corrective measures are derived so that the imaging errors of the optical system are improved. The corrective measures may comprise a change in the position or the shape of the optical element being analyzed, or another optical element of the optical system. The target shape of the surface may, for example, be determined so that the optical element at least partially corrects imaging errors caused by other optical elements.
摘要翻译：在用于改善包括具有表面的光学元件的微光刻投影曝光装置的照明系统或投影物镜的成像特性的方法中，直接在各个点测量表面的形状。为此，测量光束被引导到这些点上，并且测量反射或折射的光束。使用干涉仪。基于测量形状与目标形状的偏差，导出校正措施，使得光学系统的成像误差得到改善。校正措施可以包括被分析的光学元件的位置或形状的改变，或光学系统的另一个光学元件的变化。例如，可以确定表面的目标形状，使得光学元件至少部分地校正由其它光学元件引起的成像误差。

66. 发明申请

US20090190116A1 METHOD OF MANUFACTURING A MINIATURIZED DEVICE 有权
标题翻译：制造微型器件的方法
公开(公告)号：US20090190116A1
公开(公告)日：2009-07-30
申请号：US12408577
申请日：2009-03-20
申请人： Markus Schwab , Aksel Goehnermeier , Toralf Gruner , Tammo Uitterdijk
发明人： Markus Schwab , Aksel Goehnermeier , Toralf Gruner , Tammo Uitterdijk
IPC分类号： G03B27/42 , G03B27/54
CPC分类号： G03B27/42 , G03F7/70258
摘要： A lithographic method of manufacturing a miniaturized device using a projection exposure system involves illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane of the imaging optics; disposing a substrate carrying a resist in a region of the image plane of the imaging optics and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.
摘要翻译：使用投影曝光系统制造小型化装置的光刻方法包括用测量光照射投影曝光系统的成像光学元件的物平面; 针对所述摄像光学元件的像平面上的多个位置中的每一个检测在相应位置处穿过所述图像平面的测量光的角度分布; 基于要成像的所选择的图案化结构和所述多个所检测的角度分布来调整所述投影曝光系统的远心度; 将要成像的所选择的图案结构设置在成像光学器件的物平面的区域中; 在所述成像光学元件的像面的区域中设置携带抗蚀剂的基板，并且利用所述投影曝光系统以调节的远心度将成像光曝光; 并显影出曝光的抗蚀剂并用显影的抗蚀剂处理衬底。

67. 发明申请

US20090073392A1 Illumination System Including Grazing Incidence Mirror For Microlithography Exposure System 审中-公开
标题翻译：包括用于微光刻曝光系统的放映入射镜的照明系统
公开(公告)号：US20090073392A1
公开(公告)日：2009-03-19
申请号：US11855359
申请日：2007-09-14
申请人： Hans-Juergen Mann , Wilhelm Ulrich , Daniel Kraemer , Toralf Gruner , Aurelian Dodoc
发明人： Hans-Juergen Mann , Wilhelm Ulrich , Daniel Kraemer , Toralf Gruner , Aurelian Dodoc
IPC分类号： G03B21/28 , G03B21/06
CPC分类号： G03F7/70233 , G03F7/702
摘要： In general, in one aspect, the invention features a system that includes a catoptric projection objective having an optical axis and including a plurality of projection objective elements positioned between an object plane and an image plane, the object and image planes being orthogonal to the optical axis, the projection objective being configured so that during operation the projection objective directs radiation reflected at the object plane to the image plane to form an image at the image plane of an object positioned in a field at the object plane, the field having a first dimension of 8 mm or more and a second dimension of 8 mm or more, the first and second dimensions being along orthogonal directions. The system also includes an illumination system including a plurality of illumination system elements, the illumination system being configured so that during operation the illumination system directs the radiation to the field at the object plane, where a chief ray of the radiation has an angle of incidence of 10° or less at the object plane.
摘要翻译：通常，在一个方面，本发明的特征在于一种系统，其包括具有光轴并且包括位于物平面和图像平面之间的多个投影物镜元件的反射投影物镜，物体和像平面正交于光学所述投影物镜被配置为使得在操作期间，投影物镜将在物平面处反射的辐射引导到像平面以在位于物平面处的场中的物体的像平面处形成图像，该场具有第一尺寸为8mm以上，第二尺寸为8mm以上，第一尺寸和第二尺寸沿正交方向。该系统还包括包括多个照明系统元件的照明系统，照明系统被配置为使得在操作期间照明系统将辐射引导到物平面处的场，其中辐射的主射线具有入射角在物平面上为10°以下。

68. 发明申请

US20090021714A1 COMBINATION STOP FOR CATOPTRIC PROJECTION ARRANGEMENT 有权
标题翻译：用于投影安排的组合停止
公开(公告)号：US20090021714A1
公开(公告)日：2009-01-22
申请号：US12173595
申请日：2008-07-15
申请人： Hans-Juergen Mann , Daniel Kraehmer , Aurelian Dodoc , Toralf Gruner
发明人： Hans-Juergen Mann , Daniel Kraehmer , Aurelian Dodoc , Toralf Gruner
IPC分类号： G03B27/54
CPC分类号： G03F7/70941 , G02B5/005 , G02B17/0657 , G03F7/70233 , G03F7/7025
摘要： The disclosure relates to an optical projection arrangement that can be used to image a reticle onto a substrate. The projection arrangement includes reflective elements, by which a ray path is defined. A combination stop is in a pupil of the ray path. The combination stop has a first opening (aperture opening) for use as an aperture stop. The combination stop also has a second opening for allowing passage of a ray bundle of the ray path, such that the combination stop acts as a combined aperture stop and stray light stop. In addition, the disclosure relates to a corresponding combination stop for optical arrangements, as well as related systems, components and methods.
摘要翻译：本公开涉及一种可用于将掩模版成像到基底上的光学投影装置。投影装置包括反射元件，通过该反射元件定义光线路径。光束路径中的光瞳组合停止。组合止动件具有用作孔径光阑的第一开口（孔口）。组合挡块还具有用于允许射线路径的射线束通过的第二开口，使得组合挡块用作组合孔径光阑和杂散光挡块。此外，本公开涉及用于光学布置的相应组合停止，以及相关系统，部件和方法。

69. 发明申请

US20080316444A1 METHOD AND DEVICE FOR THE CORRECTION OF IMAGING DEFECTS 有权
标题翻译：用于校正图像缺陷的方法和装置
公开(公告)号：US20080316444A1
公开(公告)日：2008-12-25
申请号：US12171394
申请日：2008-07-11
申请人： Franz Sorg , Peter Deufel , Toralf Gruner
发明人： Franz Sorg , Peter Deufel , Toralf Gruner
IPC分类号： G03B27/68
CPC分类号： G03F7/70308 , G03F7/70825 , G03F7/70933
摘要： The disclosure relates to a microlithography projection exposure system having optical corrective elements configured to modify the imaging characteristics, as well as related systems and components.
摘要翻译：本公开涉及具有被配置为修改成像特性以及相关系统和组件的光学校正元件的微光刻投影曝光系统。

70. 发明申请

US20070165198A1 Projection objective for a microlithographic projection exposure apparatus 审中-公开
标题翻译：微光刻投影曝光装置的投影物镜
公开(公告)号：US20070165198A1
公开(公告)日：2007-07-19
申请号：US10597806
申请日：2004-12-27
申请人： Bernhard Kneer , Norbert Wabra , Toralf Gruner , Alexander Epple , Susanne Beder , Wolfgang Singer
发明人： Bernhard Kneer , Norbert Wabra , Toralf Gruner , Alexander Epple , Susanne Beder , Wolfgang Singer
IPC分类号： G03B27/00
CPC分类号： G03F7/70225 , G03F7/70241 , G03F7/70341 , G03F7/70958 , G03F7/70966
摘要： A projection objective of a microlithographic projection exposure apparatus (110) is designed for immersion operation in which an immersion liquid (134) adjoins a photosensitive layer (126). The refractive index of the immersion liquid is greater than the refractive index of a medium (L5; 142; L205; LL7; LL8; LL9). that adjoins the immersion liquid on the object side of the projection objective (120; 120′; 120″). The projection objective is designed such that the immersion liquid (134) is convexly curved towards the object plane (122) during immersion operation.
摘要翻译：微光刻投影曝光装置（110）的投影物镜被设计用于浸没操作，其中浸没液体（134）邻接感光层（126）。浸没液的折射率大于介质的折射率（L 5; 142; L 205; LL 7; LL 8; LL 9）。其邻接在投影物镜（120; 120'; 120“）的物体侧的浸没液体。投影物镜被设计成使得浸入液体（134）在浸入操作期间朝向物平面（122）凸形弯曲。

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