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61. 发明授权

US06939664B2 Low-activation energy silicon-containing resist system 失效
标题翻译：低活化能含硅抗蚀剂体系
公开(公告)号：US06939664B2
公开(公告)日：2005-09-06
申请号：US10693199
申请日：2003-10-24
申请人： Wu-Song Huang , Robert D. Allen , Marie Angelopoulos , Ranee W. Kwong , Ratnam Sooriyakumaran
发明人： Wu-Song Huang , Robert D. Allen , Marie Angelopoulos , Ranee W. Kwong , Ratnam Sooriyakumaran
IPC分类号： G03C1/76 , G03F20060101 , G03F7/004 , G03F7/075 , G03E7/004
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0046
摘要： Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
摘要翻译：提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅烷倍半硅氧烷聚合物含有侧链溶解性抑制酸不稳定部分，用于酸催化裂解的活化能和高光密度部分的存在被最小化或避免。本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。本发明的聚合物在正性抗蚀剂组合物中特别有用。本发明包括使用这种抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。

62. 发明申请

US20050106494A1 Silicon-containing resist systems with cyclic ketal protecting groups 审中-公开
标题翻译：具有环状缩酮保护基的含硅抗蚀剂体系
公开(公告)号：US20050106494A1
公开(公告)日：2005-05-19
申请号：US10716785
申请日：2003-11-19
申请人： Wu-Song Huang , Robert Allen , Marie Angelopoulos , Ranee Kwong , Ratnam Sooriyakumaran
发明人： Wu-Song Huang , Robert Allen , Marie Angelopoulos , Ranee Kwong , Ratnam Sooriyakumaran
IPC分类号： G03F7/039 , C08G77/22 , G03C1/492 , G03F7/004 , G03F7/075 , G03F7/09 , G03F7/11 , G03F7/20 , H01L21/027
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0046 , G03F7/0757
摘要： Inventive silsesquioxane polymers are provided, and photoresist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting cyclic ketal acid-labile moieties that have low activation energy for acid-catalyzed cleaving. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such photoresist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
摘要翻译：提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的光致抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅倍半硅氧烷聚合物含有侧链溶解性抑制性环状缩酮酸不稳定部分，具有低活化能的酸催化裂解。本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。本发明的聚合物在正性抗蚀剂组合物中特别有用。本发明包括使用这种光致抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。

63. 发明授权

US06858357B2 Attenuated embedded phase shift photomask blanks 失效
标题翻译：嵌入式相移光掩模空白
公开(公告)号：US06858357B2
公开(公告)日：2005-02-22
申请号：US10657665
申请日：2003-09-08
申请人： Marie Angelopoulos , Katherina E. Babich , Cameron James Brooks , S. Jay Chey , C. Richard Guarnieri , Michael Straight Hibbs , Kenneth Christopher Racette
发明人： Marie Angelopoulos , Katherina E. Babich , Cameron James Brooks , S. Jay Chey , C. Richard Guarnieri , Michael Straight Hibbs , Kenneth Christopher Racette
IPC分类号： G03F1/32 , C23C14/06 , C23C14/35 , G03F7/16 , G03F9/00
CPC分类号： G03F1/32 , C23C14/0641 , C23C14/0676 , C23C14/352 , G03F7/16 , Y10T428/265
摘要： An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.
摘要翻译：通过由金属，硅，氮或金属，硅，氮和氧制成的光学半透明的膜形成产生透射光的相移的衰减的嵌入式相移光掩模坯料。通过该方法获得宽范围的光学透射（0.001nm至高达193nm的20％）。实现后沉积工艺以获得在工业中使用的所需性能（相对于激光照射和酸处理的光学性质的稳定性）。实现用于溅射靶的特殊制造工艺以降低膜的缺陷。

64. 发明授权

US06830708B2 Water-soluble electrically conducting polymers, their synthesis and use 失效
标题翻译：水溶性导电聚合物，其合成和用途
公开(公告)号：US06830708B2
公开(公告)日：2004-12-14
申请号：US09921126
申请日：2001-08-02
申请人： Marie Angelopoulos , Jeffrey Donald Gelorme , Thomas Harold Newman , Niranjan Mohanlal Patel , David Earle Seeger
发明人： Marie Angelopoulos , Jeffrey Donald Gelorme , Thomas Harold Newman , Niranjan Mohanlal Patel , David Earle Seeger
IPC分类号： H01B112
CPC分类号： H01B1/127 , H01B1/128 , Y10S428/922
摘要： Disclosed is a novel composition of matter comprising a polyacid and a polymer containing repeating units which contain one or more basic atoms. The complex is water-soluble and electrically conductive. The complex is useful in providing organic discharge layers for use in electronic applications and fabrications.
摘要翻译：公开了一种包含多酸和含有含有一个或多个碱性原子的重复单元的聚合物的新物质组合物。该复合物是水溶性和导电性的。该复合物可用于提供用于电子应用和制造的有机放电层。

65. 发明授权

US06586156B2 Etch improved resist systems containing acrylate (or methacrylate) silane monomers 有权
标题翻译：蚀刻改进的含有丙烯酸酯（或甲基丙烯酸酯）硅烷单体的抗蚀剂体系
公开(公告)号：US06586156B2
公开(公告)日：2003-07-01
申请号：US09907392
申请日：2001-07-17
申请人： Marie Angelopoulos , Wu-Song Huang , Dai Junyan , Ranee W. Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau , Karen E. Petrillo
发明人： Marie Angelopoulos , Wu-Song Huang , Dai Junyan , Ranee W. Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau , Karen E. Petrillo
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , G03F7/0392 , Y10S430/106
摘要： A chemically amplified (CA) photoresist system wherein a terpolymer containing ketal/phenolic/silicon based sidechains is provided. Among other things, the terpolymers provide for improved bake technologies. In another aspect a process for lithographic treatment of a substrate by means of ketal/phenolic/silicon based compositions and corresponding processes for the production of an object, particularly an electronic component are provided.
摘要翻译：一种化学放大（CA）光刻胶体系，其中提供含有缩酮/酚/硅基侧链的三元共聚物。除其他外，三元共聚物可提供改进的烘烤技术。在另一方面，提供了通过缩酮/酚/硅基组合物对基材进行光刻处理的方法和用于制备物体，特别是电子部件的相应方法。

66. 发明授权

US06458907B1 Organometallic polymers and use thereof 失效
标题翻译：有机金属聚合物及其用途
公开(公告)号：US06458907B1
公开(公告)日：2002-10-01
申请号：US09677586
申请日：2000-10-03
申请人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Ranee W. Kwong
发明人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Ranee W. Kwong
IPC分类号： C08F23004
CPC分类号： G03F7/0042 , G03F7/027
摘要： Compositions comprising a polymer of organometallic polymerizable monomer acid or ester are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
摘要翻译：包含有机金属可聚合单体酸或酯的聚合物的组合物可用作抗蚀剂，并且对显影照射敏感，同时显示增强的抗反应离子蚀刻性。

67. 发明授权

US06420084B1 Mask-making using resist having SIO bond-containing polymer 失效
标题翻译：使用具有含SIO键的聚合物的抗蚀剂进行掩模制作
公开(公告)号：US06420084B1
公开(公告)日：2002-07-16
申请号：US09602136
申请日：2000-06-23
申请人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau
发明人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau
IPC分类号： G03F7004
CPC分类号： G03F7/0757
摘要： The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses methods of forming patterned material layers (especially conductive, semiconductive, or magnetic material structures) using the combination of the SiO-containing resist and a halogen compound-containing pattern transfer etchant where the halogen is Cl, Br or I.
摘要翻译：本发明提供使用本发明的抗蚀剂组合物的改进的抗蚀剂组合物和平版印刷方法。本发明的抗蚀剂组合物是酸催化的抗蚀剂，其特征在于存在含SiO的聚合物。本发明还包括使用含SiO的抗蚀剂和含卤素化合物的图案转移蚀刻剂的组合形成图案化材料层（特别是导电，半导体或磁性材料结构）的方法，其中卤素是Cl，Br或I.

68. 发明授权

US6149840A Electrically conductive polymeric materials and use thereof 失效
标题翻译：导电聚合材料及其用途
公开(公告)号：US6149840A
公开(公告)日：2000-11-21
申请号：US838296
申请日：1997-09-29
申请人： Ali Afzali Ardakani , Marie Angelopoulos , Vincent Albert Bourgault , Liam David Comerford , Michael Wayne Mirre , Steven Earle Molis , Ravi Saraf , Jane Margaret Shaw , Peter Joseph Spellane , Niranjan Mohanlal Patel
发明人： Ali Afzali Ardakani , Marie Angelopoulos , Vincent Albert Bourgault , Liam David Comerford , Michael Wayne Mirre , Steven Earle Molis , Ravi Saraf , Jane Margaret Shaw , Peter Joseph Spellane , Niranjan Mohanlal Patel
IPC分类号： C08L33/00 , C08G61/02 , C08G61/12 , C08G75/02 , C08L33/04 , C08L53/02 , C08L65/00 , C08L69/00 , C08L79/00 , C08L79/02 , C08L79/04 , C08L81/02 , C08L81/04 , C08L101/00 , C08L101/12 , H01B1/00 , H01B1/12 , C08G73/06
CPC分类号： H01B1/128 , C08G61/02 , C08G61/123 , C08G75/0209 , C08G75/0295 , C08L101/12 , C08L65/00 , C08L69/00 , C08L79/02 , C08L79/04 , C08L81/02 , H01B1/00 , H01B1/124 , C08L53/02 , C08L81/04
摘要： A polymer blend composition, capable of being made electrically conductive by application of heat having an electrically conductive upon doping polymer in undoped form; the undoped polymer is selected from the group consisting of substituted and unsubstituted polyparaphenylenevinylenes, polyanilines, polyazines, polythiophenes, poly-p-phenylene sulfides, polyfuranes, polyselenophenes, polyacetylenes filtered from soluble precursors and combinations and blends thereof, compounded and blended at a molecular scale with a dielectric polymer; wherein the dielectric polymer is selected from the group consisting of interpolymers of acrylonitrile-butadiene-styrene, acetal acrylic liquid crystal polymers, polybutylene terephthalate, polycarbonate, polyester, polyetherimide, polyethersulfone, polyethylene, polyethylene terephthalate, polyphenylene oxide, polyphenylene sulfide, polypropylene, polystyrene, polyurethane, polyvinychloride, styrene-acrylonitrile copolymer, fluoropolymers, nylon polyesters, and thermoplastic elastomers, and a thermally deblockable dopant selected from the group consisting of triflates, tosylates and borates, the electrically conductive upon doping polymer having enhanced solubility in undoped form with said dielectric polymer to form a compatible molecularly mixed blend in solution; doping of the polymer occurs only after exposure to heat.
摘要翻译：一种聚合物共混组合物，其能够通过施加具有未掺杂形式的具有导电性的掺杂聚合物的热而导电; 未掺杂的聚合物选自取代和未取代的聚对亚苯基亚乙烯基，聚苯胺，聚嗪，聚噻吩，聚对苯硫醚，聚呋喃，聚硒吩，可溶性前体过滤的聚乙炔及其组合和共混物，以分子量配混和共混与介电聚合物; 所述介电聚合物选自丙烯腈 - 丁二烯 - 苯乙烯，缩醛丙烯酸类液晶聚合物，聚对苯二甲酸丁二醇酯，聚碳酸酯，聚酯，聚醚酰亚胺，聚醚砜，聚乙烯，聚对苯二甲酸乙二醇酯，聚苯醚，聚苯硫醚，聚丙烯，聚苯乙烯聚氨酯，聚氯乙烯，苯乙烯 - 丙烯腈共聚物，含氟聚合物，尼龙聚酯和热塑性弹性体，以及选自三氟甲磺酸酯，甲苯磺酸酯和硼酸酯的热可去结合的掺杂剂，所述导电的一次性掺杂聚合物具有增强的未掺杂形式的溶解度，电介质聚合物在溶液中形成相容的分子混合共混物; 聚合物的掺杂仅在暴露于热之后才发生。

69. 发明授权

US6030550A Methods of fabrication of cross-linked electrically conductive polymers and precursors thereof 失效
公开(公告)号：US6030550A
公开(公告)日：2000-02-29
申请号：US594680
申请日：1996-02-02
申请人： Marie Angelopoulos , Jeffrey D. Gelorme , Yun Hsin Liao , Jane M. Shaw
发明人： Marie Angelopoulos , Jeffrey D. Gelorme , Yun Hsin Liao , Jane M. Shaw
IPC分类号： H01B1/12
CPC分类号： H01B1/128 , H01B1/125 , H01B1/127
摘要： Cross-linked electrically conductive polymers, in particular electrically conductive, polyaniline are described. Dopants and substituents having pendant cross-linkable functionality are used which form a cross-linked conducting polymer network. The cross-linking functionality can be hydrogen-bonding as well as chemically polymerizable or cross-linkable. A conjugated path between chains can also be incorporated. The resulting cross-linked conducting polymers have enhanced thermal and environmental stability. The dopant cannot readily be washed out with solvents or diffuse out upon exposure to heat. In addition, the cross-linked polymers have enhanced electrical conductivity.

70. 发明授权

US6017682A Solid state extension method 失效
标题翻译：固态扩展方法
公开(公告)号：US6017682A
公开(公告)日：2000-01-25
申请号：US979382
申请日：1997-11-26
申请人： Marie Angelopoulos , Claudius Feger , Jeffrey Donald Gelorme , Jane Margaret Shaw
发明人： Marie Angelopoulos , Claudius Feger , Jeffrey Donald Gelorme , Jane Margaret Shaw
IPC分类号： G03F7/004 , G03F7/038 , G03F7/40
CPC分类号： G03F7/0387 , G03F7/0045 , Y10S430/143 , Y10S430/167
摘要： A solid state chain extension method provides for the formation of a solid state film comprised of a high molecular weight polymer by chain extending a deblocked Lewis base with Lewis acid oligomers while the reactants are in a solid state form. In one embodiment, a negative resist is prepared by selectively exposing regions of the solid state film. The Lewis base is deblocked at the exposed regions by a suitable deblocking means. The Lewis acid oligomers and the deblocked Lewis base chain extend at the exposed regions. Development of the film removes the non-polymerized reactants. Optionally, the Lewis acid oligomers, when radiation-cross-linking, are cross-linked with one another prior to deblocking the Lewis base to form a negative resist. The cross-linked oligomers polymerize with the subsequently deblocked base to provide a high molecular weight polymer film. In an alternative embodiment, a positive resist is used by degrading and removing photo-sensitive Lewis acid oligomers using selective exposure lithography techniques and, subsequently, deblocking the Lewis base and chain extending the remaining oligomers with the deblocked Lewis base at the unexposed regions.
摘要翻译：固态链延伸方法提供了通过将路易斯酸低聚物链路延伸解链路易斯碱同时反应物呈固态形式形成由高分子量聚合物构成的固态膜。在一个实施方案中，通过选择性地暴露固态膜的区域来制备负性抗蚀剂。路易斯碱通过合适的去块装置在暴露区域解封。路易斯酸低聚物和解封的路易斯碱基链在暴露的区域延伸。膜的开发除去未聚合的反应物。任选地，当辐射交联时，路易斯酸低聚物在将路易斯碱解封以形成负性抗蚀剂之前彼此交联。交联的低聚物与随后的解封底物聚合以提供高分子量聚合物膜。在替代实施方案中，通过使用选择性曝光光刻技术降解和除去光敏路易斯酸低聚物，然后使路易斯碱和链在未曝光区域上与解封的路易斯碱扩展剩余的低聚物链，使用正性抗蚀剂。

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