会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 61. 发明授权
    • Electromechanical memory cell
    • 机电式记忆体
    • US06473361B1
    • 2002-10-29
    • US09709096
    • 2000-11-10
    • Jingkuang ChenFeixia PanJoel A. Kubby
    • Jingkuang ChenFeixia PanJoel A. Kubby
    • G11C800
    • G11C23/00B81B3/0054B81B2203/0118B82Y10/00G11B9/14H01H59/0009H01H2001/0047H01H2037/008
    • A low power, nonvolatile microelectromechanical memory cell stores data. This memory cell uses a pair of cantilevers, to store a bit of information. The on and off state of this mechanical latch is switched by using, for example, electrostatic forces applied sequentially on the two cantilevers. The cantilevers are partially overlapping. Changing the relative position of the cantilevers determines whether they are electrically conducting or not. One state represents a logical “1”. The other state represents a logical “0”. After a bit of data is written, the cantilevers are locked by mechanical forces inherent in the cantilevers and will not change state unless a sequential electrical writing signal is applied. The sequential nature of the required writing signal makes inadvertent or noise related data corruption highly unlikely. This MEMS memory cell can be implemented, for example, using a three-polysilicon-layer surface micro-machining process. The mechanical nature of the memory cell makes the cell immune to radiation. The cell is compatible with existing VLSI processes. Therefore monolithic memory devices comprising, for example, a plurality of the memory cells, read/write circuitry, and I/O circuitry, can be made using inexpensive, standard processes. The memory devices can be used in almost any electronic device requiring memory. For example the memory device is used in document processors, cell phones and satellites.
    • 低功率,非易失性微机电存储单元存储数据。 该存储单元使用一对悬臂来存储一些信息。 通过使用例如依次施加在两个悬臂上的静电力来切换该机械闩锁的开和关状态。 悬臂部分重叠。 改变悬臂的相对位置确定它们是否导电。 一个状态代表逻辑“1”。 另一个状态表示逻辑“0”。 在写入一些数据之后,悬臂由悬臂中固有的机械力锁定,除非应用顺序的电气写入信号,否则不会改变状态。 所需写入信号的顺序性质使得无意或噪声相关的数据损坏非常不可能。 该MEMS存储单元可以例如使用三晶硅层表面微加工工艺来实现。 记忆细胞的机械性质使得细胞免受辐射。 该小区与现有的VLSI过程兼容。 因此,可以使用廉价的标准工艺来制造包括例如多个存储单元,读/写电路和I / O电路的单片存储器件。 存储器件可用于几乎任何需要存储器的电子设备中。 例如,存储器件用于文件处理器,蜂窝电话和卫星。
    • 70. 发明授权
    • Dry etch process control using electrically biased stop junctions
    • 使用电偏置停止接头的干蚀刻工艺控制
    • US5637189A
    • 1997-06-10
    • US670117
    • 1996-06-25
    • Eric PeetersJoel A. Kubby
    • Eric PeetersJoel A. Kubby
    • H01L21/302B81C1/00H01L21/306H01L21/3065H01L21/465H01L49/00
    • H01L21/30621H01L21/3065H01L21/465
    • A dry etch process for etching a semiconductor substrate having a p-n heterojunction formed by contact between a p-layer and a n-layer requires application of a reverse bias voltage of less than a p-n breakdown voltage across the p-n heterojunction. A plasma containing chemically reactive negative ions is directed against the n-layer, with etching of non-masked regions of the substrate continuing until it is substantially stopped at the reverse biased p-n heterojunction. The semiconductor substrate can be cooled or periodically recoated with erodable protective material to limit sidewall damage to the semiconductor substrate while still allowing downward etching. This dry etch process is well suited for construction of dimensionally accurate microdevices and microelectromechanical systems.
    • 用于蚀刻具有通过p层和n层之间的接触形成的p-n异质结的半导体衬底的干蚀刻工艺需要在p-n异质结上施加小于p-n击穿电压的反向偏置电压。 包含化学反应性负离子的等离子体指向n层,其中衬底的非掩蔽区域的蚀刻继续进行,直到其基本上停止在反向偏置的p-n异质结。 半导体衬底可以被可蚀刻的保护材料冷却或周期性地重新涂覆,以限制对半导体衬底的侧壁损伤,同时仍允许向下蚀刻。 这种干蚀刻工艺非常适用于尺寸精确的微型器件和微机电系统的构造。