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61. 发明授权

US06316162B1 Polymer and a forming method of a micro pattern using the same 失效
标题翻译：聚合物和使用其的微图案的形成方法
公开(公告)号：US06316162B1
公开(公告)日：2001-11-13
申请号：US09301945
申请日：1999-04-29
申请人： Jae Chang Jung , Myoung Soo Kim , Hyung Gi Kim , Chi Hyeong Roh , Geun Su Lee , Min Ho Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Jae Chang Jung , Myoung Soo Kim , Hyung Gi Kim , Chi Hyeong Roh , Geun Su Lee , Min Ho Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： G03F738
CPC分类号： C08F8/42 , C08F222/06 , C08F232/04 , G03F7/0045 , G03F7/039 , G03F7/38 , Y10S430/106
摘要： The present invention relates to a polymer represented by following Formula 1 and a method of forming a micro pattern using the same: wherein, R is C1-C10 primary or secondary alcohol group; m and n independently represent a number from 1 to 3; and the ratio a:b:c is (10-80)mol %:(10-80)mol %:(10-80)mol %, respectively. The photoresist polymer according to the present invention is suitable for forming an ultra-micro pattern such as used in 4G or 16G DRAM semiconductor devices using a light source such as ArF, an E-beam, EUV, or an ion-beam.
摘要翻译：本发明涉及由下式1表示的聚合物和使用其形成微图案的方法：其中R是C1-C10伯或仲醇基; m和n独立地表示1至3的数; a：b：c为（10-80）摩尔％：（10-80）摩尔％：（10-80）摩尔％。本发明的光致抗蚀剂聚合物适用于形成超细纤维，微型图案，例如在使用诸如ArF，电子束，EUV或离子束的光源的4G或16G DRAM半导体器件中使用。

62. 发明授权

US06248847B1 Copolymer resin, preparation thereof, and photoresist using the same 有权
标题翻译：共聚物树脂及其制备方法和使用其的光致抗蚀剂
公开(公告)号：US06248847B1
公开(公告)日：2001-06-19
申请号：US09208650
申请日：1998-12-10
申请人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： C08F2606
CPC分类号： C07D309/12 , C07C69/013 , C07C69/54 , C07C69/757 , G03F7/0045
摘要： The present invention relates to a copolymer resin for ultra-shortwave light source such as KrF or ArF, process for preparation thereof, and photoresist comprising the same resin. The copolymer resin according to the present invention is easily prepared by conventional radical polymerization due to the introduction of norbonyl(meth)acrylate unit to a structure of copolymer for photoresist. The resin has high transparency at 193 nm wavelength, provides increased etching resistance and enhanced adhesive strength due to a hydrophilic functional group in the norbonyl group, and shows excellent resolution of 0.15 &mgr;m in practical experiment of patterning.
摘要翻译：本发明涉及用于超短波光源如KrF或ArF的共聚物树脂，其制备方法和包含相同树脂的光致抗蚀剂。由于将（甲基）丙烯酸去羰基酯单元引入到光致抗蚀剂共聚物的结构中，本发明的共聚物树脂可以容易地通过常规的自由基聚合制备。该树脂在193nm波长处具有高透明度，由于在诺乃诺基中具有亲水性官能团，提供了更高的抗蚀刻性和增强的粘合强度，并且在实际的图案化实验中显示出优异的0.15μm分辨率。

63. 发明授权

US06225020B1 Polymer and a forming method of a micro pattern using the same 有权
标题翻译：聚合物和使用其的微图案的形成方法
公开(公告)号：US06225020B1
公开(公告)日：2001-05-01
申请号：US09301944
申请日：1999-04-29
申请人： Jae Chang Jung , Myoung Soo Kim , Hyung Gi Kim , Chi Hyeong Roh , Geun Su Lee , Min Ho Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Jae Chang Jung , Myoung Soo Kim , Hyung Gi Kim , Chi Hyeong Roh , Geun Su Lee , Min Ho Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/38 , C08F222/40 , C08F232/04 , G03F7/0045 , G03F7/039
摘要： The present invention relates to a polymer represented by following Formula 1 and a method of forming a micro pattern using the same: wherein R1 is a C1-C10 straight- or branched-chain substituted alkyl group, or a benzyl group; R2 is C1-C10 primary, secondary or tertiary alcohol group; m and n independently represent a number from 1 to 3; and X, Y and Z are the respective polymerization ratios of the co-monomers. The photoresist polymer according to the present invention is suitable for forming an ultra-micro pattern such as used in 4 G or 16 G DRAM semiconductor devices using a light source such as ArF, an e-beam, EUV, or an ion-beam.
摘要翻译：本发明涉及由下式1表示的聚合物和使用其形成微图案的方法：其中R1是C1-C10直链或支链取代的烷基或苄基; R2是C1-C10伯，仲或叔醇基; m和n独立地表示1至3的数; 并且X，Y和Z是共聚单体的各自的聚合比。根据本发明的光致抗蚀剂聚合物适用于形成超微图案，例如在使用光源的4G或16G DRAM半导体器件中使用的超微图案例如ArF，电子束，EUV或离子束。

64. 发明授权

US6156668A Method for forming a fine pattern in a semiconductor device 有权
标题翻译：在半导体器件中形成精细图案的方法
公开(公告)号：US6156668A
公开(公告)日：2000-12-05
申请号：US294874
申请日：1999-04-20
申请人： Hyung Gi Kim , Myung Soo Kim , Cheol Kyu Bok , Ki Ho Baik , Dae Hoon Lee , Jin Woong Kim , Byung Jun Park
发明人： Hyung Gi Kim , Myung Soo Kim , Cheol Kyu Bok , Ki Ho Baik , Dae Hoon Lee , Jin Woong Kim , Byung Jun Park
IPC分类号： H01L21/302 , G03F7/38 , H01L21/00
CPC分类号： G03F7/38
摘要： A method for forming a fine pattern in a semiconductor device removes roughness from a pattern produced in a fine pattern fabrication process using a silylation process as being one kind of a TSI process, eliminates smoothly a photosensitive film residue caused by a residue silylation layer remained on a-non-pattern area, and increases a margin of a lithography process. To achieve the foregoing, the method performs an etching process with a fluorine/oxygen mixture gas so as to remove a thin oxide film being formed on the non-pattern area after a silylation process, enables an edge portion of a silylation region to be planarized so as to prevent the pattern from becoming rough, and forms a photosensitive film pattern by developing the photosensitive film with oxygen plasma. Thereafter, the photosensitive film residue is etched again with a mixture gas of fluorine/oxygen, thereby increasing a fabrication margin of the fine pattern.
摘要翻译：在半导体器件中形成精细图案的方法从使用硅烷化工艺的精细图案制造工艺中产生的图案中除去粗糙度作为一种TSI工艺，平滑地消除由剩余的甲硅烷基层残留的感光性膜残留物非图案区域，并增加了光刻工艺的余量。为了实现上述目的，该方法用氟/氧混合气体进行蚀刻处理，以便在甲硅烷化过程之后除去在非图案区域上形成的薄氧化膜，使甲硅烷基化区域的边缘部分平坦化以防止图案变粗糙，并且通过用氧等离子体显影感光膜形成感光膜图案。此后，用氟/氧的混合气体再次蚀刻感光性膜残渣，从而增加精细图案的制造余量。

65. 发明授权

US5981142A Photoresist copolymer 失效
标题翻译：光致抗蚀剂共聚物
公开(公告)号：US5981142A
公开(公告)日：1999-11-09
申请号：US954871
申请日：1997-10-21
申请人： Jae Chang Jung , Cheol Kyu Bok , Hyung Gi Kim
发明人： Jae Chang Jung , Cheol Kyu Bok , Hyung Gi Kim
IPC分类号： C08F8/30 , C08F20/04 , C08F20/12 , C08F22/40 , G03F7/004 , G03F7/039 , H01L21/027 , G03C1/492 , C08L35/00
CPC分类号： C08F8/30 , G03F7/0045 , G03F7/039 , Y10S430/111
摘要： A copolymer useful as a photoresist resin for submicrolithography, comprising glutarimide derivatives and acrylic acid derivatives as shown in Formula I and a photoresist composition comprising the same. ##STR1## wherein, R.sub.1 is a straight or branched alkyl group containing 0-30 carbon atoms; R.sub.2 and R.sub.3 independently represent straight or branched alkoxy or cycloalkoxy groups containing 1-15 substituted or non-substituted carbon atoms; R.sub.4 and R.sub.5 independently represent hydrogen or an alkyl group; and p, q and r, which may be the same or different, each is a polymerization ratio; p ranges from 10 to 90, q ranges from 10 to 90 and r ranges from 0 to 50.
摘要翻译：用作亚微光刻用光致抗蚀剂树脂的共聚物，其包含如式I所示的戊二酰亚胺衍生物和丙烯酸衍生物，以及包含该共聚物的光致抗蚀剂组合物。其中，R 1为含有0〜30个碳原子的直链或支链烷基; R2和R3独立地表示含有1-15个取代或未取代的碳原子的直链或支链烷氧基或环烷氧基; R4和R5独立地表示氢或烷基; 和p，q和r可以相同或不同，各自是聚合比; p范围为10〜90，q范围为10〜90，r范围为0〜50。

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