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1. 发明授权

US06316162B1 Polymer and a forming method of a micro pattern using the same 失效
标题翻译：聚合物和使用其的微图案的形成方法
公开(公告)号：US06316162B1
公开(公告)日：2001-11-13
申请号：US09301945
申请日：1999-04-29
申请人： Jae Chang Jung , Myoung Soo Kim , Hyung Gi Kim , Chi Hyeong Roh , Geun Su Lee , Min Ho Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Jae Chang Jung , Myoung Soo Kim , Hyung Gi Kim , Chi Hyeong Roh , Geun Su Lee , Min Ho Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： G03F738
CPC分类号： C08F8/42 , C08F222/06 , C08F232/04 , G03F7/0045 , G03F7/039 , G03F7/38 , Y10S430/106
摘要： The present invention relates to a polymer represented by following Formula 1 and a method of forming a micro pattern using the same: wherein, R is C1-C10 primary or secondary alcohol group; m and n independently represent a number from 1 to 3; and the ratio a:b:c is (10-80)mol %:(10-80)mol %:(10-80)mol %, respectively. The photoresist polymer according to the present invention is suitable for forming an ultra-micro pattern such as used in 4G or 16G DRAM semiconductor devices using a light source such as ArF, an E-beam, EUV, or an ion-beam.
摘要翻译：本发明涉及由下式1表示的聚合物和使用其形成微图案的方法：其中R是C1-C10伯或仲醇基; m和n独立地表示1至3的数; a：b：c为（10-80）摩尔％：（10-80）摩尔％：（10-80）摩尔％。本发明的光致抗蚀剂聚合物适用于形成超细纤维，微型图案，例如在使用诸如ArF，电子束，EUV或离子束的光源的4G或16G DRAM半导体器件中使用。

2. 发明授权

US06225020B1 Polymer and a forming method of a micro pattern using the same 有权
标题翻译：聚合物和使用其的微图案的形成方法
公开(公告)号：US06225020B1
公开(公告)日：2001-05-01
申请号：US09301944
申请日：1999-04-29
申请人： Jae Chang Jung , Myoung Soo Kim , Hyung Gi Kim , Chi Hyeong Roh , Geun Su Lee , Min Ho Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Jae Chang Jung , Myoung Soo Kim , Hyung Gi Kim , Chi Hyeong Roh , Geun Su Lee , Min Ho Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/38 , C08F222/40 , C08F232/04 , G03F7/0045 , G03F7/039
摘要： The present invention relates to a polymer represented by following Formula 1 and a method of forming a micro pattern using the same: wherein R1 is a C1-C10 straight- or branched-chain substituted alkyl group, or a benzyl group; R2 is C1-C10 primary, secondary or tertiary alcohol group; m and n independently represent a number from 1 to 3; and X, Y and Z are the respective polymerization ratios of the co-monomers. The photoresist polymer according to the present invention is suitable for forming an ultra-micro pattern such as used in 4 G or 16 G DRAM semiconductor devices using a light source such as ArF, an e-beam, EUV, or an ion-beam.
摘要翻译：本发明涉及由下式1表示的聚合物和使用其形成微图案的方法：其中R1是C1-C10直链或支链取代的烷基或苄基; R2是C1-C10伯，仲或叔醇基; m和n独立地表示1至3的数; 并且X，Y和Z是共聚单体的各自的聚合比。根据本发明的光致抗蚀剂聚合物适用于形成超微图案，例如在使用光源的4G或16G DRAM半导体器件中使用的超微图案例如ArF，电子束，EUV或离子束。

3. 发明授权

US06416926B1 Thiabicyclo compound, a polymer-containing said compound, and a photoresist micro pattern forming method using the same 失效
标题翻译：二硫化双环化合物，含聚合物的所述化合物和使用其的光致抗蚀剂微图案形成方法
公开(公告)号：US06416926B1
公开(公告)日：2002-07-09
申请号：US09630818
申请日：2000-08-02
申请人： Jae Chang Jung , Chi Hyeong Roh , Min Ho Jung , Geun Su Lee , Ki Ho Baik
发明人： Jae Chang Jung , Chi Hyeong Roh , Min Ho Jung , Geun Su Lee , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/039 , G03F7/0045
摘要： The present invention provides heterobicyclo compounds of the formula: and a method for preparing the same, where Z, X, R1, R2, and m are those defined herein. Compounds of the present invention can be used as monomers for preparing a photoresist resin which is useful, for example, ultra-violet wavelength photolithography processes.
摘要翻译：本发明提供下式的异二环化合物及其制备方法，其中Z，X，R 1，R 2和m为本文定义的那些。本发明的化合物可以用作制备光致抗蚀剂树脂的单体，其可用于例如紫外线波长光刻工艺。

4. 发明授权

US06291131B1 Monomers for photoresist, polymers thereof, and photoresist compositions using the same 失效
公开(公告)号：US06291131B1
公开(公告)日：2001-09-18
申请号：US09383547
申请日：1999-08-26
申请人： Jae Chang Jung , Chi Hyeong Roh , Min Ho Jung , Keun Kyu Kong , Geun Su Lee , Ki Ho Baik
发明人： Jae Chang Jung , Chi Hyeong Roh , Min Ho Jung , Keun Kyu Kong , Geun Su Lee , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： C07D493/08 , C07C61/13 , C07C69/753 , C07D495/08 , C08F222/06 , C08F232/08 , G03F7/0045 , G03F7/039 , Y02P20/55 , Y10S430/127
摘要： The present invention relates to novel monomers for preparing photoresist polymers, polymers thereof, and photoresist compositions using the same. The monomers of the iinvention are represented by the following Chemical Formula 1: wherein, X and Y individually represent oxygen, sulfur, CH2 or CH2CH2; n is an integer of 1 to 5; and R1, R2, R3 and R4 individually represent hydrogen, C1-C10 alkyl having substituent(s) on its main or branched chain, C1-C10 ester having substituent(s) on its main or branched chain, C1-C10 ketone having substituent(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) on its main or branched chain, C1-C10 acetal having substituent(s) on its main or branched chain, C1-C10 alkyl having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 ester having substituent(s) including one or more hydroxyl group(s ) on its main or branched chain, C1-C10 ketone having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, or C1-C10 acetal having substituent(s) including one or more hydroxyl group(s) on its main or branched chain; provided that at least one of R1 to R4 represent(s) —COO—R′—OH wherein R′ is a linear or branched chain alkyl group with or without substituent(s) on its linear or branched chain. Polymers according to the present invention preferably comprise (i) a monomer of Chemical Formula 1 above as the first comonomer, (ii) a polyalicyclic derivative having one or more acid labile protective group(s) as the second comonomer, and (iii) at least one polymerization-enhancing monomer, preferably selected from the group consisting of maleic anhydride, maleimide derivatives, and combinations thereof. In order to increase photosensitivity, it is also preferable for the photoresist copolymer to comprise (iv) a polyalicyclic derivative having one or more carboxylic acid groups, as an additional comonomer.

5. 发明授权

US6150069A Oxabicyclo compound, a polymer-containing said compound, and a photoresist micro pattern forming method using the same 有权
标题翻译：氧杂双环化合物，含聚合物的所述化合物和使用其的光致抗蚀剂微图案形成方法
公开(公告)号：US6150069A
公开(公告)日：2000-11-21
申请号：US311488
申请日：1999-05-13
申请人： Jae Chang Jung , Chi Hyeong Roh , Min Ho Jung , Geun Su Lee , Ki Ho Baik
发明人： Jae Chang Jung , Chi Hyeong Roh , Min Ho Jung , Geun Su Lee , Ki Ho Baik
IPC分类号： C07D493/08 , C08F22/06 , C08F32/00 , C08L45/00 , G03F7/004 , G03F7/038 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045
摘要： The present invention relates to oxabicyclo compounds and a method of preparing the same. The compounds of the present invention can be used as monomers for preparing a photoresist resin which is useful in photolithography processes using ultra-violet light sources, and are represented by the following Formula 1: ##STR1## wherein, R.sub.1 and R.sub.2 are the same or different, and represent a hydrogen or a C.sub.1 -C.sub.4 straight or branched chain substituted alkyl group; and m is a number from 1 to 4.In other embodiments, the present invention relates to an ArF or a KrF photoresist resin containing an oxabicyclo monomer, and compositions and photoresist micro pattern forming methods using the same.
摘要翻译：本发明涉及氧杂双环化合物及其制备方法。本发明的化合物可以用作制备光致抗蚀剂树脂的单体，其可用于使用紫外光源的光刻工艺中，并且由下式1表示：其中R1和R2相同或不同，并且表示氢或C1-C4直链或支链取代的烷基; m是1至4的数。在其它实施方案中，本发明涉及含有氧杂双环单体的ArF或KrF光致抗蚀剂树脂，以及使用其的组合物和光致抗蚀剂微图案形成方法。

6. 发明授权

US6045967A Method and device using ArF photoresist 失效
标题翻译：使用ArF光刻胶的方法和装置
公开(公告)号：US6045967A
公开(公告)日：2000-04-04
申请号：US003780
申请日：1998-01-07
申请人： Jae Chang Jung , Chi Hyeong Roh , Joo On Park
发明人： Jae Chang Jung , Chi Hyeong Roh , Joo On Park
IPC分类号： G03F7/027 , C08F2/48 , C08F226/02 , C08F232/00 , G03F7/004 , G03F7/039 , H01L21/027 , G03C1/72 , G03C1/74
CPC分类号： G03F7/039 , G03F7/0045
摘要： A novel photoresist copolymer, consisting of at least two aliphatic cyclo-olefins and an amine, which is useful for the photolithography using ArF as a light source. The photoresist prepared from the copolymer can be patterned with high resolution.
摘要翻译：由至少两种脂族环烯烃和胺组成的新型光致抗蚀剂共聚物，其可用于使用ArF作为光源的光刻。由共聚物制备的光刻胶可以高分辨率图案化。

7. 发明授权

US06987155B2 Polymers for photoresist and photoresist compositions using the same 失效
标题翻译：用于光致抗蚀剂的聚合物和使用其的光致抗蚀剂组合物
公开(公告)号：US06987155B2
公开(公告)日：2006-01-17
申请号：US10394606
申请日：2003-03-21
申请人： Chi Hyeong Roh , Jae Chang Jung
发明人： Chi Hyeong Roh , Jae Chang Jung
IPC分类号： C08F126/06
CPC分类号： C08F232/08 , G03F7/0395
摘要： The present invention relates to photoresist monomers, polymers formed therefrom and photoresist compositions suitable for photolithography processes employing a DUV light source, such as KrF (249 nm) and ArF(193 nm); EUV; VUV; E-beam; ion-beam; and X-ray. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, m is 1 or 2. Polymers of the present invention comprise repeating units derived from the comonomer of Chemical Formula 1, preferably together with monomers of the following Chemical Formula 2: wherein, R* is an acid-labile group, and l is 1 or 2.
摘要翻译：本发明涉及光致抗蚀剂单体，由其形成的聚合物和适用于使用DUV光源如KrF（249nm）和ArF（193nm））的光刻工艺的光致抗蚀剂组合物; EUV; VUV; 电子束离子束和X光片。本发明的光致抗蚀剂单体由以下化学式1表示：其中m为1或2.本发明的聚合物包含衍生自化学式1的共聚单体的重复单元，优选与以下化学式2的单体一起其中，R *为酸不稳定基团，l为1或2。

8. 发明授权

US06569971B2 Polymers for photoresist and photoresist compositions using the same 失效
标题翻译：用于光致抗蚀剂和光致抗蚀剂组合物的聚合物
公开(公告)号：US06569971B2
公开(公告)日：2003-05-27
申请号：US09383475
申请日：1999-08-26
申请人： Chi Hyeong Roh , Jae Chang Jung
发明人： Chi Hyeong Roh , Jae Chang Jung
IPC分类号： C08G8500
CPC分类号： C08F232/08 , G03F7/0395
摘要： The present invention relates to photoresist monomers, polymers formed therefrom and photoresist compositions suitable for photolithography processes employing a DUV light source, such as KrF(249 nm) and ArF(193 nm); EUV; VUV; E-beam; ion-beam; and X-ray. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, m is 1 or 2. Polymers of the present invention comprise repeating units derived from the comonomer of Chemical Formula 1, preferably together with monomers of the following Chemical Formula 2: wherein, R* is an acid-labile group, and W is 1 or 2.
摘要翻译：本发明涉及光致抗蚀剂单体，由其形成的聚合物和适用于使用DUV光源如KrF（249nm）和ArF（193nm））的光刻工艺的光致抗蚀剂组合物; EUV; VUV; 电子束离子束和X光片。本发明的光致抗蚀剂单体由以下化学式1表示：其中m为1或2.本发明的聚合物包含衍生自化学式1的共聚单体的重复单元，优选与以下化学式2的单体一起其中，R *为酸不稳定基团，W为1或2。

9. 发明授权

US06316565B1 Amide- or imide-introduced copolymer, preparation thereof and a photoresist comprising the same 失效
标题翻译：引入酰胺或酰亚胺的共聚物，其制备方法和包含该共聚物的光致抗蚀剂
公开(公告)号：US06316565B1
公开(公告)日：2001-11-13
申请号：US08896768
申请日：1997-07-18
申请人： Jae Chang Jung , Chi Hyeong Roh
发明人： Jae Chang Jung , Chi Hyeong Roh
IPC分类号： C08F2240
CPC分类号： C08F232/08 , C08F232/04 , G03F7/0045
摘要： A novel copolymer useful for photoresist, which allows a formation of patterns showing a significantly improved resolution in a photolithography using ArF (193 nm) light source, is prepared by copolymerizing at least two cycloaliphatic olefins with an amide or imide.
摘要翻译：通过使至少两种脂环族烯烃与酰胺或酰亚胺共聚来制备用于光致抗蚀剂的新型共聚物，其通过使用ArF（193nm）光源在光刻中形成显示出显着提高的分辨率的图案。

10. 发明授权

US06602649B2 Photoresist monomers, polymers thereof and photoresist compositions containing the same 失效
标题翻译：光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物
公开(公告)号：US06602649B2
公开(公告)日：2003-08-05
申请号：US09882191
申请日：2001-06-15
申请人： Chi Hyeong Roh , Seung Hyuk Lee , Chan Seob Cho
发明人： Chi Hyeong Roh , Seung Hyuk Lee , Chan Seob Cho
IPC分类号： G03F7004
CPC分类号： G03F7/0395
摘要： Photoresist monomers which can be used to form photoresist polymers and photoresist compositions using the same which are suitable for photolithography processes employing a deep ultraviolet light source and copolymers thereof. Monomers are represented by following Formula 1: wherein, R1, is —OH or —R—OH; R represents substituted or unsubstituted linear or branched (C1-C10) alkylene, substituted or unsubstituted (C1-C10) alkylene comprising an ether linkage, substituted or unsubstituted (C1-C10) alkylene comprising an ester linkage, or substituted or unsubstituted (C1-C10) alkylene comprising an ketone moiety; and 1 is an integer of 1 or 2.
摘要翻译：可用于形成光刻胶聚合物和使用其的光刻胶组合物的光致抗蚀剂单体，其适用于采用深紫外光源及其共聚物的光刻工艺。单体由下式1表示：其中R1是-OH或-R-OH; R代表取代或未取代的直链或支链（C1-C10）亚烷基，取代或未取代的（C1-C10）亚烷基，包括醚键，包含酯键的取代或未取代的（C1-C10）亚烷基或包含酮部分的取代或未取代的（C1-C10）亚烷基; 和1是1或2的整数。

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