专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US07494724B2 Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权
标题翻译：磁阻效应元件，其制造方法，磁再现元件和磁存储器
公开(公告)号：US07494724B2
公开(公告)日：2009-02-24
申请号：US11773294
申请日：2007-07-03
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle an be interrupted when the current reaches a predetermined value.
摘要翻译：一种制造磁阻效应元件的方法包括：在第一铁磁层上形成绝缘层，通过从绝缘层的顶表面推出针而形成到达第一铁磁层的孔，以及沉积铁磁材料以形成第二铁磁体覆盖掩埋孔的绝缘层的层。孔径可以具有不大于20nm的开口宽度。可以监测在第一铁磁层和针之间流动的电流，并且当电流达到预定值时针头的推压被中断。

62. 发明授权

US07355883B2 Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权
标题翻译：磁阻效应元件，其制造方法，磁再现元件和磁存储器
公开(公告)号：US07355883B2
公开(公告)日：2008-04-08
申请号：US11006594
申请日：2004-12-08
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译：磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。

63. 发明申请

US20060126230A1 Magnetoresistance effect element, magnetic head and magnetic reproducing system 有权
公开(公告)号：US20060126230A1
公开(公告)日：2006-06-15
申请号：US11347208
申请日：2006-02-06
申请人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.

64. 发明授权

US07061732B2 Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus 失效
公开(公告)号：US07061732B2
公开(公告)日：2006-06-13
申请号：US10968979
申请日：2004-10-21
申请人： Masatoshi Yoshikawa , Masayuki Takagishi , Yuzo Kamiguchi , Hiromi Yuasa
发明人： Masatoshi Yoshikawa , Masayuki Takagishi , Yuzo Kamiguchi , Hiromi Yuasa
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.

65. 发明授权

US06914757B2 Magnetoresistance effect element, magnetic head and magnetic reproducing system 有权
标题翻译：磁阻效应元件，磁头和磁再现系统
公开(公告)号：US06914757B2
公开(公告)日：2005-07-05
申请号：US09961171
申请日：2001-09-24
申请人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G01R33/09 , G11B5/00 , G11B5/39 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： A magnetoresistance effect element includes a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer in which the direction of magnetization varies in response to an external magnetic field, and a non-magnetic intermediate layer formed between the magnetization fixed layer and the magnetization free layer. The magnetoresistance effect element has a resistance varying in response to a relative angle between the direction of magnetization in the magnetization fixed layer and the direction of magnetization in the magnetization free layer, the resistance being detected when a sense current is applied to the film planes of the magnetization fixed layer, the non-magnetic intermediate layer, and the magnetization free layer in a direction substantially perpendicular thereto. The film area of the non-magnetic intermediate layer is smaller than the film area of each of the magnetization fixed layer and the magnetization free layer, the magnetoresistance effect element has a single conductive part with a film area smaller than the film area of each of the magnetoresistance effect element, and the magnetoresistance effect element is configured such that the sense current flows only through the single conductive part.
摘要翻译：磁阻效应元件包括其中磁化方向基本上固定到一个方向的磁化固定层，其中磁化方向响应于外部磁场而变化的磁化自由层以及形成在其间的非磁性中间层磁化固定层和无磁化层。磁阻效应元件具有响应于磁化固定层中的磁化方向与磁化自由层中的磁化方向之间的相对角度而变化的电阻，当感测电流施加到膜平面时，检测电阻磁化固定层，非磁性中间层和与磁化自由层基本垂直的方向。非磁性中间层的膜面积小于磁化固定层和磁化自由层的膜面积，磁阻效应元件具有单个导电部分，其膜面积小于膜面积磁阻效应元件和磁阻效应元件被构造成使得感测电流仅流过单个导电部件。

66. 发明授权

US07245461B2 Magnetoresistance effect element having a pillar electrode 有权
标题翻译：具有柱电极的磁阻效应元件
公开(公告)号：US07245461B2
公开(公告)日：2007-07-17
申请号：US11347208
申请日：2006-02-06
申请人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.
摘要翻译：提供了能够精确地限定CPP型MR元件中的有源区域并且有效地抑制和消除由于来自电极的电流引起的磁场的影响的磁阻效应元件，以及使用其的磁头和磁性再现系统。 MR元件的有源区域由感测电流流过的部分的面积定义。此外，用于限定元件的有源区域的柱状电极或柱状非磁性材料的横截面的形状被设计成沿着磁通量的流动延伸，以便有效地只从来自直接下方的轨道的信号活跃区域。当不能忽略由于来自柱电极的电流引起的磁场时，来自记录介质的磁通量在一定程度上不对称地进入MR元件的磁轭和磁化自由层。期望的是，如果柱状电极的截面被设计为沿着磁通量的流动而不对称，则再生效率得到改善。

67. 发明授权

US07240419B2 Method of manufacturing a magnetoresistance effect element 有权
标题翻译：制造磁阻效应元件的方法
公开(公告)号：US07240419B2
公开(公告)日：2007-07-10
申请号：US10796086
申请日：2004-03-10
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11B5/133
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle can be interrupted when the current reaches a predetermined value.
摘要翻译：一种制造磁阻效应元件的方法包括：在第一铁磁层上形成绝缘层，通过从绝缘层的顶表面推出针而形成到达第一铁磁层的孔，以及沉积铁磁材料以形成第二铁磁体覆盖掩埋孔的绝缘层的层。孔径可以具有不大于20nm的开口宽度。可以监测在第一铁磁层和针之间流动的电流，并且当电流达到预定值时可以中断针的推压。

68. 发明申请

US20060126228A1 Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus 审中-公开
标题翻译：磁阻头和垂直磁记录再现装置
公开(公告)号：US20060126228A1
公开(公告)日：2006-06-15
申请号：US11352372
申请日：2006-02-13
申请人： Masatoshi Yoshikawa , Masayuki Takagishi , Yuzo Kamiguchi , Hiromi Yuasa
发明人： Masatoshi Yoshikawa , Masayuki Takagishi , Yuzo Kamiguchi , Hiromi Yuasa
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer-sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.
摘要翻译：磁阻磁头具有包括第一和第二磁化自由层的磁阻膜，夹在第一和第二磁化自由层之间的中间层，底层和保护层，其以下层的顺序堆叠，第一磁化自由度层，中间层，第二磁化自由层和保护层，并且布置成基本上垂直于空气轴承表面，以及与底层连接的第一电极和与保护层连接的第二电极，电极允许电流在基本垂直于该平面的方向上流动。允许第一和第二磁化自由层的每个磁化方向响应于来自介质的信号磁通而独立地变化。第一和第二磁化自由层根据其磁化方向产生磁阻效应。

69. 发明授权

US06937447B2 Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 失效
标题翻译：磁阻效应元件，其制造方法，磁再现元件和磁存储器
公开(公告)号：US06937447B2
公开(公告)日：2005-08-30
申请号：US10244550
申请日：2002-09-17
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： B32B7/02 , G11B5/39 , G11B5/127
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer, insulating layer overlying the first ferromagnetic layer, and second ferromagnetic layer overlying the insulating layer. The insulating layer has formed a through hole having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译：磁阻效应元件包括第一铁磁层，覆盖第一铁磁层的绝缘层和覆盖绝缘层的第二铁磁层。绝缘层形成了具有不大于20nm的开口宽度的通孔，并且第一和第二铁磁层经由通孔相互连接。

70. 发明申请

US20050052795A1 Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus 失效
公开(公告)号：US20050052795A1
公开(公告)日：2005-03-10
申请号：US10968983
申请日：2004-10-21
申请人： Masatoshi Yoshikawa , Masayuki Takagishi , Yuzo Kamiguchi , Hiromi Yuasa
发明人： Masatoshi Yoshikawa , Masayuki Takagishi , Yuzo Kamiguchi , Hiromi Yuasa
IPC分类号： G11B5/39 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式