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    • 61. 发明授权
    • Methods and apparatus for tuning a set of plasma processing steps
    • 调整一组等离子体处理步骤的方法和装置
    • US07138067B2
    • 2006-11-21
    • US10951552
    • 2004-09-27
    • Vahid VahediJohn DaughertyHarmeet SinghAnthony Chen
    • Vahid VahediJohn DaughertyHarmeet SinghAnthony Chen
    • B44C1/22H01L21/00
    • C03C15/00C03C23/006H01J37/32623H01J37/32642H01L21/32136
    • In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
    • 在等离子体处理系统中,公开了一组等离子体处理步骤的调谐方法。 该方法包括在等离子体处理系统的等离子体反应器中击打包含中性粒子和离子的第一等离子体。 该方法还包括在第一蚀刻步骤中蚀刻在衬底上的一组层; 将可移动均匀环定位在基底周围,其中均匀环的底表面与基底的顶表面大致相同的高度; 并且在等离子体处理系统的等离子体反应器中击打基本上由中性体组成的第二等离子体。 该方法还包括在第二蚀刻步骤中蚀刻衬底上的这组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本上是均匀的。
    • 64. 发明授权
    • Planar star couplers with reduced insertion loss
    • 具有减少插入损耗的平面星形耦合器
    • US06892008B2
    • 2005-05-10
    • US10367208
    • 2003-02-14
    • Harmeet SinghHamid R. Khazaei
    • Harmeet SinghHamid R. Khazaei
    • G02B6/12G02B6/28G02B6/30
    • G02B6/2808G02B2006/121
    • In a star coupler, a Free Propagation Region (FPR) is bounded by a first interface and a second opposing interface, and guides an input signal launched from the first interface in a predetermined first plane while allowing the input signal to travel unguided in a predetermined second plane in the FPR which is orthogonal to the first plane. A plurality of output waveguides are formed in an array and terminate at the second interface of the FPR. The axis of each output waveguide at the second interface is separated from an axis of an adjacent output waveguide by a predetermined distance “t”. An input waveguide is split into a plurality of subsections which each terminate at the first interface of the FPR. The subsections of the input waveguide are arranged for simultaneously launching parts of the input signal into the FPR which diffracts and produces mode patterns at the second interface having a maximum intensity at inputs of each of the output waveguides, and a low intensity elsewhere.
    • 在星形耦合器中,自由传播区域(FPR)由第一接口和第二相对接口限制,并且在预定的第一平面中引导从第一接口发射的输入信号,同时允许输入信号以预定的方式行进 FPR中的第二平面与第一平面正交。 阵列中形成多个输出波导,并终止于FPR的第二接口。 第二界面处的每个输出波导的轴线与相邻输出波导的轴线分开预定的距离“t”。 输入波导被分成多个子部分,每个子部分终止于FPR的第一界面处。 输入波导的子部分被布置成同时将输入信号的部分发射到FPR中,FPR在第二接口处衍射和产生具有在每个输出波导的输入处的最大强度的模式图案,并且在其它地方产生低强度。
    • 65. 发明授权
    • In-situ cleaning of a polymer coated plasma processing chamber
    • 聚合物涂层等离子体处理室的原位清洗
    • US06776851B1
    • 2004-08-17
    • US10186917
    • 2002-06-28
    • Harmeet SinghJohn E. DaughertyVahid VahediSaurabh J. Ullal
    • Harmeet SinghJohn E. DaughertyVahid VahediSaurabh J. Ullal
    • B08B300
    • H01J37/32862C23C16/4404C23C16/4405H01J37/321Y10S134/902Y10S438/905
    • A method for removing chamber deposits in between process operations in a semiconductor process chamber is provided. The method initiates with depositing a fluorine containing polymer layer over an inner surface of a semiconductor process chamber where the semiconductor chamber is empty. Then, a wafer is introduced into the semiconductor process chamber after depositing the fluorine containing polymer layer. Next, a process operation is performed on the wafer. The process operation deposits a residue on the fluorine containing polymer layer covering the inner surface of the semiconductor process chamber. Then, the wafer is removed from the semiconductor process chamber. Next, an oxygen based cleaning operation is performed. The oxygen based cleaning operation liberates fluorine from the fluorine containing polymer layer to remove a silicon based residue. An apparatus configured to remove chamber deposits between process operations is also provided.
    • 提供了一种用于在半导体处理室中的处理操作之间去除室沉积物的方法。 该方法通过在半导体处理室的内表面上沉积含氟聚合物层而开始,其中半导体室是空的。 然后,在沉积含氟聚合物层之后将晶片引入半导体处理室。 接下来,对晶片进行处理操作。 处理操作在覆盖半导体处理室的内表面的含氟聚合物层上沉积残留物。 然后,将晶片从半导体处理室中取出。 接下来,进行氧气清洗操作。 基于氧的清洗操作从含氟聚合物层中释放氟以除去硅基残渣。 还提供了一种被配置为在处理操作之间去除室沉积物的装置。
    • 67. 发明授权
    • Waveguide narrowband rejection filter
    • 波导窄带滤波器
    • US6005999A
    • 1999-12-21
    • US975843
    • 1997-11-21
    • Harmeet SinghCharles W. HaggansWayne F. Varner
    • Harmeet SinghCharles W. HaggansWayne F. Varner
    • G02B6/02G02B6/036G02B6/34G02B6/22
    • G02B6/03644G02B6/02119G02B6/03633
    • An optical fiber filter including a length of single mode fiber having an operating wavelength .lambda..sub.0. Fiber designs may include a depressed inner clad fiber, a photosensitive matched inner clad fiber or a photosensitive depressed inner clad fiber. The length of fiber includes a core, an inner cladding, an outer cladding and an azimuthally asymmetric grating. The core allows the existence of a LP.sub.01 core mode having an effective index of n.sub.eff,01 and the cladding allows the existence of a LP.sub.1m cladding mode, m.gtoreq.1. The core has an index of refraction n.sub.co and a radius A. The inner cladding has an index of refraction n.sub.ic, an inner radius A, an outer radius AB, a thickness W, where W=AB-A, and a refraction difference .DELTA.n-, where .DELTA.n- is the difference between n.sub.ic and n.sub.oc and n.sub.co >n.sub.oc >n.sub.ic. The inner cladding may be photosensitive to a radius R.sub.grat and have a fractional photosensitivity .gamma.. The outer cladding generally laterally surrounds the inner cladding and has an inner radius AB, an outer radius B, and an index of refraction n.sub.oc, where .DELTA.n.sub.+ is the difference between n.sub.co and n.sub.oc. The grating has an effective tilt angle .theta. and a period (.LAMBDA.), where .LAMBDA..ltoreq.(.lambda..sub.0 cos .theta.)/(2n.sub.eff,01), the maximum relative coupling coefficient for the cladding mode max(RCC.sub.1m) being greater or equal to 0.2 and the ratio of peak reflectivities for the cladding mode and the core mode RR being greater or equal to 1.
    • 包括具有工作波长λ0的单模光纤的长度的光纤滤波器。光纤设计可以包括凹陷内包层光纤,光敏匹配的内包层光纤或光敏凹陷的内包层光纤。 纤维的长度包括芯,内包层,外包层和方位不对称光栅。 核心允许存在具有有效指数为neff,01的LP01核心模式,并且包层允许存在LP1m包层模式,m> / = 1。 芯具有折射率nco和半径A.内包层具有折射率nic,内半径A,外半径AB,厚度W,其中W = AB-A,折射差DELTA n - 其中,DELTA n-是nic和noc之间的差异,nco> noc> nic。 内包层可以对半径Rgrat感光,并具有分数光敏度γ。 外包层通常侧向包围内包层,并且具有内半径AB,外半径B和折射率noc,其中,ΔTAn +是nco和noc之间的差。 光栅具有有效倾斜角θ和周期(LAMBDA),其中LAMBDA
    • 68. 发明授权
    • Methods and apparatus for synchronizing RF pulses in a plasma processing system
    • 用于在等离子体处理系统中同步RF脉冲的方法和装置
    • US09368329B2
    • 2016-06-14
    • US13550719
    • 2012-07-17
    • John C. Valcore, Jr.Bradford J. LyndakerHarmeet Singh
    • John C. Valcore, Jr.Bradford J. LyndakerHarmeet Singh
    • H01J37/32
    • H01J37/32183H01J37/32146H01J37/32174
    • A synchronized pulsing arrangement for providing at least two synchronized pulsing RF signals to a plasma processing chamber of a plasma processing system is provided. The arrangement includes a first RF generator for providing a first RF signal. The first RF signal is provided to the plasma processing chamber to energize a plasma therein, the first RF signal representing a pulsing RF signal. The arrangement also includes a second RF generator for providing a second RF signal to the plasma processing chamber. The second RF generator has a sensor subsystem for detecting values of at least one parameter associated with the plasma processing chamber that reflects whether the first RF signal is pulsed high or pulsed low and a pulse controlling subsystem for pulsing the second RF signal responsive to the detecting the values of at least one parameter.
    • 提供了一种用于向等离子体处理系统的等离子体处理室提供至少两个同步脉冲RF信号的同步脉冲装置。 该装置包括用于提供第一RF信号的第一RF发生器。 第一RF信号被提供给等离子体处理室以激励其中的等离子体,第一RF信号表示脉冲RF信号。 该装置还包括用于向等离子体处理室提供第二RF信号的第二RF发生器。 第二RF发生器具有用于检测与等离子体处理室相关联的至少一个参数的值的传感器子系统,其反映第一RF信号是高电平脉冲还是脉冲低脉冲,以及响应于检测脉冲控制第二RF信号的脉冲控制子系统 至少有一个参数的值。