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    • 67. 发明申请
    • Objective lens apparatus, optical pickup apparatus, and optical disc driving apparatus
    • 物镜装置,光学拾取装置和光盘驱动装置
    • US20070263522A1
    • 2007-11-15
    • US11790543
    • 2007-04-26
    • Kenji YamamotoNoriaki Nishi
    • Kenji YamamotoNoriaki Nishi
    • G11B7/00
    • G11B7/0935G11B7/1374G11B2007/0006
    • An objective lens apparatus is disclosed. The apparatus includes: a first objective lens with a first numerical aperture, which is capable of focusing a laser light on a first optical record medium with a first cover layer of a first thickness; a second objective lens with a second numerical aperture smaller than the first numerical aperture, which is capable of focusing the laser light on a second optical record medium with a second cover layer of a second thickness larger than the first thickness; a third objective lens with a third numerical aperture smaller than the second numerical aperture, which is capable of focusing the laser light on a third optical record medium with a third cover layer of a third thickness larger than the second thickness; and a lens holder which holds the first objective lens, the second objective lens, and the third objective lens.
    • 公开了一种物镜设备。 该装置包括:具有第一数值孔径的第一物镜,其能够将激光聚焦在具有第一厚度的第一覆盖层的第一光学记录介质上; 具有小于第一数值孔径的第二数值孔径的第二物镜,其能够将激光聚焦在具有大于第一厚度的第二厚度的第二覆盖层的第二光学记录介质上; 具有小于第二数值孔径的第三数值孔径的第三物镜,其能够将激光聚焦在具有大于第二厚度的第三厚度的第三覆盖层的第三光学记录介质上; 以及保持第一物镜,第二物镜和第三物镜的透镜保持器。
    • 70. 发明授权
    • Method for fabricating tandem thin film photoelectric converter
    • 串联薄膜光电转换器的制造方法
    • US07238545B2
    • 2007-07-03
    • US10508044
    • 2003-04-02
    • Masashi YoshimiTakashi SuezakiKenji Yamamoto
    • Masashi YoshimiTakashi SuezakiKenji Yamamoto
    • H01L21/00
    • H01L31/076H01L31/202Y02E10/548Y02P70/521
    • A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit (3) on a substrate (1) in a deposition apparatus, taking out the substrate (1) having the photoelectric conversion unit (3) from the deposition apparatus to the air, introducing the substrate (1) into a deposition apparatus and carrying out plasma exposure processing on the substrate (1) in an atmosphere of a gas mixture containing an impurity for determining the conductivity type of the same conductivity type as that of the uppermost conductivity type layer (33) and hydrogen, forming a conductivity type intermediate layer (5) by additionally supplying semiconductor raw gas to the deposition apparatus, and then forming a subsequent photoelectric conversion unit (4).
    • 制造串联型薄膜光电转换装置的方法包括以下步骤:在沉积装置中在基板(1)上形成至少一个光电转换单元(3),取出具有光电转换单元的基板(1) (3)从沉积设备到空气中,将基板(1)引入沉积设备中,并在含有杂质的气体混合物的气氛中对基板(1)进行等离子体曝光处理,以确定导电类型 通过向沉积设备另外提供半导体原料气体,然后形成后续的光电转换单元(4),形成导电型中间层(5),与最上面的导电型层(33)和氢的导电类型相同。