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1. 发明授权

US07238545B2 Method for fabricating tandem thin film photoelectric converter 有权
标题翻译：串联薄膜光电转换器的制造方法
公开(公告)号：US07238545B2
公开(公告)日：2007-07-03
申请号：US10508044
申请日：2003-04-02
申请人： Masashi Yoshimi , Takashi Suezaki , Kenji Yamamoto
发明人： Masashi Yoshimi , Takashi Suezaki , Kenji Yamamoto
IPC分类号： H01L21/00
CPC分类号： H01L31/076 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit (3) on a substrate (1) in a deposition apparatus, taking out the substrate (1) having the photoelectric conversion unit (3) from the deposition apparatus to the air, introducing the substrate (1) into a deposition apparatus and carrying out plasma exposure processing on the substrate (1) in an atmosphere of a gas mixture containing an impurity for determining the conductivity type of the same conductivity type as that of the uppermost conductivity type layer (33) and hydrogen, forming a conductivity type intermediate layer (5) by additionally supplying semiconductor raw gas to the deposition apparatus, and then forming a subsequent photoelectric conversion unit (4).
摘要翻译：制造串联型薄膜光电转换装置的方法包括以下步骤：在沉积装置中在基板（1）上形成至少一个光电转换单元（3），取出具有光电转换单元的基板（1）（3）从沉积设备到空气中，将基板（1）引入沉积设备中，并在含有杂质的气体混合物的气氛中对基板（1）进行等离子体曝光处理，以确定导电类型通过向沉积设备另外提供半导体原料气体，然后形成后续的光电转换单元（4），形成导电型中间层（5），与最上面的导电型层（33）和氢的导电类型相同。

2. 发明申请

US20050181534A1 Method for fabricating tandem thin film photoelectric converter 有权
标题翻译：串联薄膜光电转换器的制造方法
公开(公告)号：US20050181534A1
公开(公告)日：2005-08-18
申请号：US10508044
申请日：2003-04-02
申请人： Masashi Yoshimi , Takashi Suezaki , Kenji Yamamoto
发明人： Masashi Yoshimi , Takashi Suezaki , Kenji Yamamoto
IPC分类号： H01L31/075 , H01L21/00 , H01L31/076 , H01L31/20
CPC分类号： H01L31/076 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit (3) on a substrate (1) in a deposition apparatus, taking out the substrate (1) having the photoelectric conversion unit (3) from the deposition apparatus to the air, introducing the substrate (1) into a deposition apparatus and carrying out plasma exposure processing on the substrate (1) in an atmosphere of a gas mixture containing an impurity for determining the conductivity type of the same conductivity type as that of the uppermost conductivity type layer (33) and hydrogen, forming a conductivity type intermediate layer (5) by additionally supplying semiconductor raw gas to the deposition apparatus, and then forming a subsequent photoelectric conversion unit (4).
摘要翻译：制造串联型薄膜光电转换装置的方法包括以下步骤：在沉积装置中在基板（1）上形成至少一个光电转换单元（3），取出具有光电转换单元的基板（1）（3）从沉积设备到空气中，将基板（1）引入沉积设备中，并在含有杂质的气体混合物的气氛中对基板（1）进行等离子体曝光处理，以确定导电类型通过向沉积设备另外提供半导体原料气体，然后形成后续的光电转换单元（4），形成导电型中间层（5），与最上面的导电型层（33）和氢的导电类型相同。

3. 发明授权

US07678992B2 Thin-film photoelectric converter 有权
标题翻译：薄膜光电转换器
公开(公告)号：US07678992B2
公开(公告)日：2010-03-16
申请号：US10543516
申请日：2004-05-28
申请人： Takashi Suezaki , Masashi Yoshimi , Toshiaki Sasaki , Yuko Tawada , Kenji Yamamoto
发明人： Takashi Suezaki , Masashi Yoshimi , Toshiaki Sasaki , Yuko Tawada , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area. A thin film photoelectric converter of the present invention is preferably an integrated thin film photoelectric converter.
摘要翻译：通过在包括晶体硅光电转换单元的薄膜光电转换器中控制开路电压和填充因子以不小而提供薄膜光电转换器，特别是具有改进的光电转换效率的集成薄膜光电转换器。本发明的薄膜光电转换器至少在透明基板的一个主表面上依次形成透明电极膜，晶体硅光电转换单元和背面电极膜，并且转换器具有白色变色区域形成晶体硅光电转换单元后的转换器表面的一部分。白色变色区域的尺寸的百分比优选不大于光电转换区域的尺寸的5％。本发明的薄膜光电转换器优选为集成薄膜光电转换器。

4. 发明申请

US20060097259A1 Thin-film photoelectric converter 有权
标题翻译：薄膜光电转换器
公开(公告)号：US20060097259A1
公开(公告)日：2006-05-11
申请号：US10543516
申请日：2004-05-28
申请人： Takashi Suezaki , Masashi Yoshimi , Toshiaki Sasaki , Yuko Tawada , Kenji Yamamoto
发明人： Takashi Suezaki , Masashi Yoshimi , Toshiaki Sasaki , Yuko Tawada , Kenji Yamamoto
IPC分类号： H01L29/76 , H01L29/10
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area. A thin film photoelectric converter of the present invention is preferably an integrated thin film photoelectric converter.
摘要翻译：通过在包括晶体硅光电转换单元的薄膜光电转换器中控制开路电压和填充因子以不小而提供薄膜光电转换器，特别是具有改进的光电转换效率的集成薄膜光电转换器。本发明的薄膜光电转换器至少在透明基板的一个主表面上依次形成透明电极膜，晶体硅光电转换单元和背面电极膜，并且转换器具有白色变色区域形成晶体硅光电转换单元后的转换器表面的一部分。白色变色区域的尺寸的百分比优选不大于光电转换区域的尺寸的5％。本发明的薄膜光电转换器优选为集成薄膜光电转换器。

5. 发明申请

US20090165853A1 Stacked-Type Photoelectric Conversion Device 有权
标题翻译：堆叠式光电转换装置
公开(公告)号：US20090165853A1
公开(公告)日：2009-07-02
申请号：US12087067
申请日：2006-12-19
申请人： Toru Sawada , Yuko Tawada , Takashi Suezaki , Kenji Yamamoto
发明人： Toru Sawada , Yuko Tawada , Takashi Suezaki , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： The present invention makes it possible to provide a stacked-type thin-film photoelectric conversion device having high photostability, at a high yield rate and significantly reduced production costs. In a stacked-type photoelectric conversion device having an amorphous silicon-based photoelectric conversion unit and a crystalline silicon-based photoelectric conversion unit stacked thereon or vice versa, an amorphous photoelectric conversion layer included in the amorphous photoelectric conversion unit has a thickness of at least 0.03 μm and less than 0.17 μm, a crystalline photoelectric conversion layer included in the crystalline photoelectric conversion unit has a thickness of at least 0.2 μm and less than 1.0 μm, and a silicon oxide layer of a first conductivity type included in the amorphous photoelectric conversion unit and a silicon layer of a second conductivity type included in the crystalline photoelectric conversion unit make a junction.
摘要翻译：本发明使得可以以高产率提供具有高光稳定性的堆叠型薄膜光电转换装置并显着降低生产成本。在具有非晶硅基光电转换单元和层叠在其上的晶体硅基光电转换单元的叠层型光电转换装置中，反之亦然，非晶型光电转换单元中包含的非晶型光电转换层至少具有至少 0.03μm以上且小于0.17μm的结晶光电转换层的结晶光电转换层的厚度为0.2μm以上且小于1.0μm，并且包含在非晶光电转换中的第一导电类型的氧化硅层单元和包括在晶体光电转换单元中的第二导电类型的硅层形成结。

6. 发明申请

US20090014066A1 Thin-Film Photoelectric Converter 审中-公开
标题翻译：薄膜光电转换器
公开(公告)号：US20090014066A1
公开(公告)日：2009-01-15
申请号：US11571803
申请日：2005-06-23
申请人： Takashi Suezaki , Kenji Yamamoto
发明人： Takashi Suezaki , Kenji Yamamoto
IPC分类号： H01L31/0264 , H01L31/04
CPC分类号： H01L31/0236 , H01L31/02366 , H01L31/054 , H01L31/077 , Y02E10/50
摘要： The present invention provides a three-junction thin-film photoelectric converter having high conversion efficiency at low cost by improving the film quality of the crystalline silicon photoelectric conversion layer and improving the light trapping effect.A thin-film photoelectric converter according to the present invention is a three-junction thin-film photoelectric converter and has a structure in which a first amorphous silicon photoelectric conversion unit, a second amorphous silicon photoelectric conversion unit, a reflective intermediate layer, and a crystalline silicon photoelectric conversion unit are stacked in that order from the light incident side, wherein the photoelectric conversion units are disposed on a transparent base having surface unevenness, and the reflective intermediate layer has an unevenness depth that is smaller than that of the base.
摘要翻译：本发明通过提高晶体硅光电转换层的膜质量和提高光俘获效果，提供了一种低成本的高转换效率的三结薄膜光电转换器。根据本发明的薄膜光电转换器是三结薄膜光电转换器，具有第一非晶硅光电转换单元，第二非晶硅光电转换单元，反射中间层和晶体硅光电转换单元从光入射侧依次层叠，其中光电转换单元设置在具有表面凹凸的透明基底上，反射中间层的凹凸深度小于基底的凹凸深度。

7. 发明申请

US20070251573A1 Photoelectric Converter 审中-公开
标题翻译：光电转换器
公开(公告)号：US20070251573A1
公开(公告)日：2007-11-01
申请号：US11664529
申请日：2005-09-20
申请人： Takashi Suezaki , Kenji Yamamoto
发明人： Takashi Suezaki , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/078 , H01L31/02167 , Y02E10/50
摘要： It is intended to provide a highly reliable photoelectric converter having a reflective layer, deterioration in output characteristics thereof being suppressed under a constant temperature and humidity environment. The photoelectric converter according to the present invention has at least one thin film silicon-based photoelectric conversion unit mainly composed of a silicon-based thin film including at least one semiconductor junction, characterized in that the photoelectric converter has a silicon alloy layer containing a kind of dopant for determining a conductivity type, oxygen, nitrogen, and crystalline silicon on a side opposite to a light incident side of the thin film silicon-based photoelectric conversion unit, and that the silicon alloy layer has a refractive index of at most 2.5 and a nitrogen concentration in a range of 1×1021 atom/cc to 1 to 1022 atom/cc.
摘要翻译：旨在提供具有反射层的高度可靠的光电转换器，其在恒定的温度和湿度环境下的输出特性的劣化被抑制。根据本发明的光电转换器具有至少一个主要由包括至少一个半导体结的硅基薄膜组成的薄膜硅基光电转换单元，其特征在于，所述光电转换器具有含有一种的用于确定与薄膜硅基光电转换单元的光入射侧相反的一侧的导电类型，氧，氮和晶体硅的掺杂剂，并且所述硅合金层具有至多2.5的折射率和在1×10 21原子/ cc至1至10 22原子/ cc的范围内的氮浓度。

8. 发明授权

US07851695B2 Stacked-type photoelectric conversion device 有权
标题翻译：堆叠式光电转换装置
公开(公告)号：US07851695B2
公开(公告)日：2010-12-14
申请号：US12087067
申请日：2006-12-19
申请人： Toru Sawada , Yuko Tawada , Takashi Suezaki , Kenji Yamamoto
发明人： Toru Sawada , Yuko Tawada , Takashi Suezaki , Kenji Yamamoto
IPC分类号： H01L31/00 , H02N6/00
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： The present invention makes it possible to provide a stacked-type thin-film photoelectric conversion device having high photostability, at a high yield rate and significantly reduced production costs. In a stacked-type photoelectric conversion device having an amorphous silicon-based photoelectric conversion unit and a crystalline silicon-based photoelectric conversion unit stacked thereon or vice versa, an amorphous photoelectric conversion layer included in the amorphous photoelectric conversion unit has a thickness of at least 0.03 μm and less than 0.17 μm, a crystalline photoelectric conversion layer included in the crystalline photoelectric conversion unit has a thickness of at least 0.2 μm and less than 1.0 μm, and a silicon oxide layer of a first conductivity type included in the amorphous photoelectric conversion unit and a silicon layer of a second conductivity type included in the crystalline photoelectric conversion unit make a junction.
摘要翻译：本发明使得可以以高产率提供具有高光稳定性的堆叠型薄膜光电转换装置并显着降低生产成本。在具有非晶硅基光电转换单元和层叠在其上的晶体硅基光电转换单元的叠层型光电转换装置中，反之亦然，非晶型光电转换单元中包含的非晶型光电转换层至少具有至少 0.03μm以上且小于0.17μm的结晶光电转换层的结晶光电转换层的厚度为0.2μm以上且小于1.0μm，并且具有第一导电类型的氧化硅层包括在非晶形光电转换单元和包括在晶体光电转换单元中的第二导电类型的硅层形成结。

9. 发明申请

US20080185036A1 Substrate For Thin Film Photoelectric Conversion Device and Thin Film Photoelectric Conversion Device Including the Same 审中-公开
标题翻译：薄膜光电转换装置及薄膜光电转换装置用基板
公开(公告)号：US20080185036A1
公开(公告)日：2008-08-07
申请号：US11791754
申请日：2005-11-09
申请人： Toshiaki Sasaki , Yohei Koi , Yuko Tawada , Takashi Suezaki , Kenji Yamamoto
发明人： Toshiaki Sasaki , Yohei Koi , Yuko Tawada , Takashi Suezaki , Kenji Yamamoto
IPC分类号： H01L31/04
CPC分类号： H01L31/076 , H01L31/02168 , H01L31/03529 , H01L31/0392 , Y02E10/548
摘要： An object of the present invention is to provide a substrate for a thin film photoelectric conversion device, in which its properties are not deteriorated when its surface unevenness is effectively increased, and then provide the thin film photoelectric conversion device having its performance improved by using the substrate.According to the present invention, by setting the surface area ratio of a transparent electrode layer in the substrate for the thin film photoelectric conversion device to at least 55% and at most 95%, the surface unevenness are effectively increased to increase the optical confinement effect, while deterioration in properties due to sharpening of the surface level variation is suppressed, whereby making it possible to provide a substrate for a thin film photoelectric conversion device, which can enhance output properties of the thin film photoelectric conversion device.
摘要翻译：本发明的目的是提供一种用于薄膜光电转换装置的基板，其特征在其表面不均匀性有效提高时不劣化，然后提供其性能得到改善的薄膜光电转换装置基质。根据本发明，通过将薄膜光电转换元件用基板中的透明电极层的表面积比设定为至少55％以上且95％以下，能够有效地增加表面不均匀性，提高光学限制效果，同时由于表面水平变化的锐化而导致的性能劣化被抑制，从而可以提供可以提高薄膜光电转换装置的输出特性的薄膜光电转换装置用基板。

10. 发明授权

US06982933B2 Recording and/or reproducing apparatus and recording medium cartridge holder 失效
公开(公告)号：US06982933B2
公开(公告)日：2006-01-03
申请号：US11096430
申请日：2005-04-01
申请人： Takeshi Igarashi , Yutaka Fukuyama , Takashi Suezaki
发明人： Takeshi Igarashi , Yutaka Fukuyama , Takashi Suezaki
IPC分类号： G11B11/00
CPC分类号： G11B17/043 , G11B17/051 , G11B23/0308 , G11B23/0311
摘要： A recording and/or reproducing apparatus for recording and/or reproducing signals on and/or from a recording medium includes a recording and/or reproducing portion for recording and/or reproducing signals on and/or from the recording medium, a carrying portion for carrying the recording medium, and first and second sliders. The first slider is movable in one direction for moving the carrying portion together with the recording medium up to a specific withdrawal position. The second slider is movable in a direction being substantially the same as the one direction for moving the recording medium carried by the carrying portion to a recording and/or reproducing position corresponding to a position of the recording and/or reproducing portion. The first slider and the second slider are overlapped to each other in the vertical direction.

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