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    • 2. 发明授权
    • Contact probe pin for semiconductor test apparatus
    • 用于半导体测试装置的探针
    • US08166568B2
    • 2012-04-24
    • US12847442
    • 2010-07-30
    • Hirotaka ItoKenji Yamamoto
    • Hirotaka ItoKenji Yamamoto
    • G01N13/16G01Q70/14
    • G01R3/00G01R1/06761H01R13/03
    • It is an object to provide a contact probe pin for a semiconductor test apparatus, including an amorphous carbon type conductive film formed on the probe pin base material surface. The conductive film is excellent in tin adhesion resistance of preventing tin which is the main component of solder from adhering to the contact part of the probe pin during contact between the probe pin and solder. The contact probe pin for a semiconductor test apparatus, includes an amorphous carbon type conductive film formed on the conductive base material surface. The amorphous carbon type conductive film has an outer surface with a surface roughness (Ra) of 6.0 nm or less, a root square slope (RΔq) of 0.28 or less, and a mean value (R) of curvature radii of concave part tips of the surface form of 180 nm or more, in a 4-μm2 scan range by an atomic force microscope.
    • 本发明的目的是提供一种用于半导体测试装置的接触探针,包括形成在探针针基材表面上的非晶碳型导电膜。 导电膜在探针和焊料之间的接触期间,防止作为焊料的主要成分的锡的锡粘附性优异地粘附到探针的接触部分。 用于半导体测试装置的接触探针包括形成在导电基材表面上的非晶碳型导电膜。 非晶碳类导电膜的表面粗糙度(Ra)为6.0nm以下,根平方斜率(R&Dgr; q)为0.28以下,凹部的曲率半径的平均值(R) 180nm以上的表面形状的尖端,在原子力显微镜的4μm2扫描范围内。