专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US4388084A Process for gasification of solid carbonaceous material 失效
标题翻译：固体碳质材料气化工艺
公开(公告)号：US4388084A
公开(公告)日：1983-06-14
申请号：US290520
申请日：1981-08-06
申请人： Koji Okane , Shozo Okamura , Masanobu Sueyasu , Seiichi Masuda , Tsutomu Tanaka , Koichi Tanaka
发明人： Koji Okane , Shozo Okamura , Masanobu Sueyasu , Seiichi Masuda , Tsutomu Tanaka , Koichi Tanaka
IPC分类号： C10J3/08 , C10J3/57 , C10J3/46
CPC分类号： C10J3/08 , C10J3/57 , C10J3/74 , C10J2200/152 , C10J2300/0906 , C10J2300/093 , C10J2300/0943 , C10J2300/0946 , C10J2300/0956 , C10J2300/0959 , C10J2300/0969 , C10J2300/0976 , C21C2250/02
摘要： In a process for gasification of solid carbonaceous material such as coal, powdered coal is top-blown onto a molten iron bath stored in a furnace through a non-submerged lance toward a hot spot formed by means of a jet of oxygen and steam top-blown through a non-submerged lance, the coal being blown by means of a carrier gas, and flux is optionally added into the furnace by the lump or blown toward the hot spot, thereby resulting in the coal being gasified. The ratio L/L.sub.o of the depression depth L of the molten iron bath to the molten iron bath depth L.sub.o is maintained from 0.05 to 0.15, and the blowing velocity of the solid carbonaceous material is maintained from 50 to 300 m/sec so as to suppress the formation of an adhered mass on the upper part of the furnace, hood or lance.
摘要翻译：在煤等固体碳质材料气化的过程中，将粉煤通过非浸没式喷枪向存储在炉中的铁水浴顶吹到通过氧气和蒸汽顶部喷射形成的热点，通过非浸没式喷枪吹送，煤通过载气吹送，并且任选地通过块将助熔剂加入到炉中或向热点吹入，从而导致煤气化。铁水槽的凹陷深度L与铁水浴深度Lo的比L / Lo保持在0.05〜0.15，固体碳质材料的吹入速度保持在50〜300m /秒，抑制在炉子，罩子或喷枪上部形成粘附质量。

62. 外观设计

USD260409S Pinball machine 失效
公开(公告)号：USD260409S
公开(公告)日：1981-08-25
申请号：US69500
申请日：1979-08-24
申请人： Koichi Tanaka , Toshio Yamamoto , Fumio Konuki
设计人： Koichi Tanaka , Toshio Yamamoto , Fumio Konuki

63. 发明授权

US09448240B2 Hydrophilic thiol probe 有权
标题翻译：亲水硫醇探针
公开(公告)号：US09448240B2
公开(公告)日：2016-09-20
申请号：US14241728
申请日：2012-08-17
申请人： Takashi Shimada , Taka-Aki Sato , Koichi Tanaka
发明人： Takashi Shimada , Taka-Aki Sato , Koichi Tanaka
IPC分类号： G01N33/68
CPC分类号： G01N33/6848 , Y10T436/145555 , Y10T436/147777 , Y10T436/173845 , Y10T436/19 , Y10T436/200833 , Y10T436/24
摘要： A thiol probe for a protein, which promotes ionization in proteomic analysis using mass spectrometry and can be used even for a protein that has a high degree of hydrophobicity and quickly turns over, and is represented by the following formula (I): In formula (I), R1 represents a linker group, and R2 represents a substituted ammonium group or a substituted amino group. A mass spectrometry method for a protein, includes the steps of obtaining a modified protein by reacting the thiol probe with a protein to be subjected to mass spectrometry and subjecting the modified protein to mass spectrometry.

64. 发明授权

US08512940B2 Method for preserving liver in a solution comprising dibutyryl cAMP 有权
标题翻译：在包含二丁酰cAMP的溶液中保存肝脏的方法
公开(公告)号：US08512940B2
公开(公告)日：2013-08-20
申请号：US13222407
申请日：2011-08-31
申请人： Takaaki Koshiba , Xiangdong Zhao , Hiromi Wada , Koichi Tanaka , Masami Nakamura
发明人： Takaaki Koshiba , Xiangdong Zhao , Hiromi Wada , Takayuki Nakamura , Koichi Tanaka
IPC分类号： A01N1/00
CPC分类号： A01N1/02 , A01N1/0226
摘要： The present invention provides a liver preservation solution containing trehalose and dibutyryl-cAMP. The content of nitroglycerin in the preservation solution is preferably lower than 0.44 mM. In the liver preservation solution of the present invention, since the toxicity due to nitroglycerin, which is observed during liver preservation, has been improved, liver transplantation can be performed with a high engrafted rate.
摘要翻译：本发明提供含有海藻糖和二丁酰基cAMP的肝保存液。保存溶液中硝酸甘油的含量优选低于0.44mM。在本发明的肝保存液中，由于在肝脏保存期间观察到的硝酸甘油的毒性已经得到改善，因此可以以高的移植率进行肝移植。

65. 发明授权

US08320026B2 Image reading apparatus and image forming apparatus with a control device for adjusting a white reference member to a set position according to shading correction or image reading operation 失效
标题翻译：图像读取装置和图像形成装置，具有用于根据阴影校正或图像读取操作将白色基准构件调整到设定位置的控制装置
公开(公告)号：US08320026B2
公开(公告)日：2012-11-27
申请号：US12356228
申请日：2009-01-20
申请人： Koichi Tanaka
发明人： Koichi Tanaka
IPC分类号： H04N1/40
CPC分类号： H04N1/4076 , H04N1/125 , H04N1/4095
摘要： An image reading apparatus including: an image sensor unit having a light source that irradiates light onto an original document transferred to a predetermined image reading position, and a light receiving element that receives reflected light of the light; a white reference member for shading correction, provided so as to oppose the image sensor unit across a transferring path for the original document; an actuator that adjusts a position or an angle of the white reference member; and a control device that sets a position or angle of the white reference member and controls the actuator so as to adjust the white reference member to the set position or to the set angle, so that light reflected from the white reference member is received on the light receiving element when correcting shading, and so that the reflected light is not received on the light receiving element when reading an image.
摘要翻译：一种图像读取装置，包括：具有将光照射到转印到预定图像读取位置的原稿上的光源的图像传感器单元和接收所述光的反射光的光接收元件; 用于阴影校正的白色参考构件，被设置为与原始文档的传送路径相对的图像传感器单元; 调节白色参考构件的位置或角度的致动器; 以及控制装置，其设置白色基准部件的位置或角度并控制致动器，以便将白色基准部件调整到设定位置或设定角度，使得从白色参考部件反射的光被接收在光接收元件在校正阴影时，并且使得当读取图像时反射光不被接收在光接收元件上。

66. 发明授权

US08268700B2 Method for manufacturing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US08268700B2
公开(公告)日：2012-09-18
申请号：US12153160
申请日：2008-05-14
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing.A method for manufacturing with excellent productivity an SOI wafer having an SOI layer with a mirror-finished surface and high film thickness uniformity can be provided.
摘要翻译：公开了一种制造SOI晶片的方法，该方法至少包括：将氢离子，稀有气体离子或两者离子注入到由硅晶片或具有在其表面上形成的氧化膜的硅晶片形成的施主晶片中从施主晶片的表面，从而形成离子注入层; 对施主晶片的离子注入表面和处理晶片的表面中的至少一个进行等离子体激活处理，把手晶片的表面与离子注入表面结合; 将这些表面彼此紧密结合; 以离子注入层的施主晶片作为边界进行机械分层，由此降低其膜厚以提供SOI层，并在600〜1000℃下进行热处理。并且基于化学机械抛光将SOI层的表面抛光10至50nm。可以提供具有优异的生产率的具有SOI层的具有镜面精加工表面和高膜厚均匀性的SOI晶片的方法。

67. 发明授权

US08030118B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
公开(公告)号：US08030118B2
公开(公告)日：2011-10-04
申请号：US11976021
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L21/00
CPC分类号： H01L31/068 , H01L31/022466 , H01L31/1884 , H01L31/1896 , Y02B10/10 , Y02E10/547
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer.

68. 发明授权

US08026448B2 Multilayer wiring board and method of manufacturing the same 有权
标题翻译：多层布线板及其制造方法
公开(公告)号：US08026448B2
公开(公告)日：2011-09-27
申请号：US12068169
申请日：2008-02-04
申请人： Koichi Tanaka
发明人： Koichi Tanaka
IPC分类号： H05K1/03
CPC分类号： H05K3/462 , H05K1/0289 , H05K3/4647 , H05K2201/09245 , H05K2203/0733 , H05K2203/1327 , Y10T29/49126
摘要： A multilayer wiring board includes at least two wiring boards having wiring layers containing wiring patterns formed on both sides. A pair of fin-shaped bumps are formed at desired positions on wiring patterns on the surfaces facing each other, of the wiring boards, so that the bumps assume a slender shape as seen in plan view and that the bumps intersect each other. The pair of fin-shaped bumps are electrically connected to form an inter-board connection terminal. Further, an insulating layer is formed between the wiring boards, and protection films are formed to cover the entire surface except pad areas defined at predetermined positions on outer wiring layers of the wiring boards.
摘要翻译：多层布线基板包括至少两个布线板，布线层包含形成在两侧的布线图案。在布线板的彼此相对的表面上的布线图案的期望位置处形成一对鳍状凸起，使得凸起呈现如平面图中看到的细长形状，并且凸块彼此相交。一对鳍状凸块电连接以形成板间连接端子。此外，在布线板之间形成绝缘层，并且形成保护膜以覆盖限定在布线板的外部布线层上的预定位置处的焊盘区域之外的整个表面。

69. 发明授权

US07879175B2 Method for manufacturing pyrolytic boron nitride composite substrate 有权
标题翻译：制造热解氮化硼复合基板的方法
公开(公告)号：US07879175B2
公开(公告)日：2011-02-01
申请号：US12078276
申请日：2008-03-28
申请人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
发明人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
IPC分类号： B32B38/10
CPC分类号： H01L21/76254 , C23C14/48
摘要： Wettability of a PBN material surface with respect to a metal is improved to expand use applications. Hydrogen ions are implanted into a surface of a silicon substrate 10 to form an ion implanted region 11 at a predetermined depth near a surface of the silicon substrate 10, and a plasma treatment or an ozone treatment is performed with respect to a main surface of the silicon substrate 10 for the purpose of surface cleaning or surface activation. The main surfaces of the silicon substrate 10 and a PBN substrate 20 subjected to the surface treatment are appressed against each other to be bonded at a room temperature, and an external impact shock is given to the bonded substrate to mechanically delaminate a silicon film 12 from a bulk 13 of the silicon substrate to be transferred. An obtained PBN composite substrate 30 is diced to form a chip having a desired size, and a refractory metal is metallized on the silicon film 12 side to be connected with a wiring material.
摘要翻译： PBN材料表面相对于金属的润湿性得到改善以扩大使用应用。将氢离子注入到硅衬底10的表面中以在硅衬底10的表面附近的预定深度处形成离子注入区11，并且相对于硅衬底10的主表面进行等离子体处理或臭氧处理硅基板10，用于表面清洁或表面活化。经过表面处理的硅衬底10和PBN衬底20的主表面在室温下相互粘合，并且对键合衬底施加外部冲击冲击，从而将硅膜12从待转移的硅衬底的体积13。将获得的PBN复合基板30切割成具有所需尺寸的芯片，并且将难熔金属在硅膜12侧金属化以与布线材料连接。

70. 发明申请

US20100311221A1 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20100311221A1
公开(公告)日：2010-12-09
申请号：US12805582
申请日：2010-08-06
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L27/1266 , H01L29/78603
摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.
摘要翻译：将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。氢离子注入，形成氢离子注入边界12。单晶Si衬底10和低熔点玻璃衬底20结合在一起。键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式