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61. 发明授权

US08143165B2 Method for fabricating semiconductor devices using strained silicon bearing material 有权
标题翻译：使用应变硅轴承材料制造半导体器件的方法
公开(公告)号：US08143165B2
公开(公告)日：2012-03-27
申请号：US12378033
申请日：2009-02-09
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： H01L21/302 , B44C1/22
CPC分类号： H01L29/045 , H01L29/78 , H01L29/7843 , H01L29/7848
摘要： A method of manufacturing an integrated circuit on semiconductor substrates, e.g., silicon wafer. The method includes providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing. In a specific embodiment, the semiconductor substrate has an overlying film of material with a second lattice with a second structure and a second spacing, the second spacing placing the film of material in a strain mode characterized by a first tensile and/or compressive mode along a single film surface crystal axis across a first portion of the film of material relative to the semiconductor substrate with the first structure and the first spacing. The method patterns a predetermined region of the first portion of the film of material to cause the first tensile and/or compressive mode in the first portion of the film of material to change to a second tensile and/or compressive mode in a resulting patterned portion of the first portion of the film of material. In a preferred embodiment, the patterns are made using a masking and etching process.
摘要翻译：一种在诸如硅晶片的半导体衬底上制造集成电路的方法。该方法包括提供一种半导体衬底，其特征在于具有第一结构和第一间隔的第一晶格。在一个具体的实施例中，半导体衬底具有覆盖的材料膜，具有第二晶格和第二间隔的材料，第二间隔将材料膜放置在以第一拉伸和/或压缩模式为特征的应变模式中相对于具有第一结构和第一间隔的半导体衬底的材料膜的第一部分上的单个膜表面晶轴。该方法将材料膜的第一部分的预定区域图案化以使材料膜的第一部分中的第一拉伸和/或压缩模式在所得到的图案部分中变为第二拉伸和/或压缩模式的材料的第一部分。在优选实施例中，使用掩模和蚀刻工艺制造图案。

62. 发明申请

US20100317140A1 TECHNIQUES FOR FORMING THIN FILMS BY IMPLANTATION WITH REDUCED CHANNELING 有权
标题翻译：通过减少通道进行植入形成薄膜的技术
公开(公告)号：US20100317140A1
公开(公告)日：2010-12-16
申请号：US12778989
申请日：2010-05-12
申请人： ADAM BRAILOVE , Zuqin Liu , Francois J. Henley , Albert J. Lamm
发明人： ADAM BRAILOVE , Zuqin Liu , Francois J. Henley , Albert J. Lamm
IPC分类号： H01L21/263 , H01J37/08
CPC分类号： H01L31/0392 , H01L21/67213 , H01L21/76254 , H01L31/18 , Y02E10/50
摘要： Embodiments of the present invention relate to the use of a particle accelerator beam to form thin films of material from a bulk substrate. In particular embodiments, a bulk substrate having a top surface is exposed to a beam of accelerated particles. Then, a thin film of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. To improve uniformity of depth of implantation, channeling effects are reduced by one or more techniques. In one technique, a miscut bulk substrate is subjected to the implantation, such that the lattice of the substrate is offset at an angle relative to the impinging particle beam. According to another technique, the substrate is tilted at an angle relative to the impinging particle beam. In still another technique, the substrate is subjected to a dithering motion during the implantation. These techniques may be employed alone or in combination.
摘要翻译：本发明的实施例涉及使用粒子加速器束从大量衬底形成材料薄膜。在具体的实施方案中，具有顶表面的本体衬底暴露于加速颗粒束。然后，通过沿着从光束注入的颗粒形成的切割区域进行受控的切割过程，将薄膜材料与本体基板分离。为了改善植入深度的均匀性，可以通过一种或多种技术降低沟道效应。在一种技术中，对杂散块体基板进行注入，使得基板的晶格相对于撞击的粒子束以一定角度偏移。根据另一种技术，衬底相对于撞击粒子束以一定角度倾斜。在另一种技术中，衬底在植入期间经历抖动运动。这些技术可以单独使用或组合使用。

63. 发明授权

US07772088B2 Method for manufacturing devices on a multi-layered substrate utilizing a stiffening backing substrate 有权
标题翻译：利用加强背衬基板在多层基板上制造器件的方法
公开(公告)号：US07772088B2
公开(公告)日：2010-08-10
申请号：US11361834
申请日：2006-02-24
申请人： Francois J. Henley , Harry Robert Kirk , James Andrew Sullivan
发明人： Francois J. Henley , Harry Robert Kirk , James Andrew Sullivan
IPC分类号： H01L21/30
CPC分类号： H01L21/2007 , B81C1/00357 , B81C2201/019 , H01L21/6835 , H01L21/76254 , H01L2221/68359
摘要： A multilayered substrate structure comprising one or more devices, e.g., optoelectronic, integrated circuit. The structure has a handle substrate, which is characterized by a predetermined thickness and a Young's modulus ranging from about 1 Mega Pascal to about 130 Giga Pascal. The structure also has a thickness of substantially crystalline material coupled to the handle substrate. Preferably, the thickness of substantially crystalline material ranges from about 100 microns to about 5 millimeters. The structure has a cleaved surface on the thickness of substantially crystalline material and a surface roughness characterizing the cleaved film of less than 200 Angstroms. At least one or more optoelectronic devices is provided on the thickness of material.
摘要翻译：包括一个或多个器件的多层衬底结构，例如光电集成电路。该结构具有手柄基底，其特征在于预定的厚度和约1兆帕至约130千兆帕斯卡的杨氏模量。该结构还具有耦合到处理衬底的基本上结晶材料的厚度。优选地，基本上结晶的材料的厚度范围为约100微米至约5毫米。该结构在基本上结晶的材料的厚度上具有切割的表面，并且表征切割膜的表面粗糙度小于200埃。在材料的厚度上提供至少一个或多个光电子器件。

64. 发明申请

US20100178723A1 Method and Structure for Fabricating Solar Cells Using a Thick Layer Transfer Process 有权
标题翻译：使用厚层转移工艺制造太阳能电池的方法和结构
公开(公告)号：US20100178723A1
公开(公告)日：2010-07-15
申请号：US12730113
申请日：2010-03-23
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： H01L31/18 , H01L21/30
CPC分类号： H01L31/068 , H01L21/76254 , H01L31/03921 , H01L31/0687 , H01L31/1804 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10T29/41
摘要： A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material.
摘要翻译：光伏电池装置，例如太阳能电池，太阳能电池板和制造方法。该装置具有包括第一表面和第二表面的光学透明基底。包括具有第一表面区域和第二表面区域的材料的第一厚度（例如，半导体材料，单晶材料）。在优选实施例中，表面区域覆盖在光学透明基板的第一表面上。该装置具有设置在材料厚度的第一表面区域和光学透明材料的第一表面之间的光学耦合材料。

65. 发明申请

US20100052105A1 Free-standing thickness of single crystal material and method having carrier lifetimes 有权
标题翻译：单晶材料的独立厚度和载体寿命的方法
公开(公告)号：US20100052105A1
公开(公告)日：2010-03-04
申请号：US12460899
申请日：2009-07-23
申请人： Francois J. Henley , Sien Kang , Zuqin Liu , Lu Tian
发明人： Francois J. Henley , Sien Kang , Zuqin Liu , Lu Tian
IPC分类号： H01L21/306 , H01L23/58
CPC分类号： H01L21/76254
摘要： A method of fabricating a thickness of silicon material includes providing a silicon ingot material having a surface region and introducing a plurality of particles having an energy of about 1-5 MeV through the surface region to a depth to define a cleave region and a thickness of detachable material between the cleave region and the surface region. Additionally, the method includes processing the silicon ingot material to free the thickness of detachable material at a vicinity of the cleave region and causing formation of a free-standing thickness of material characterized by a carrier lifetime about 10 microseconds and a thickness ranging from about 20 microns to about 150 microns with a thickness variation of less than about five percent. Furthermore, the method includes treating the free-standing thickness of material using a thermal treatment process to recover the carrier lifetime to about 200 microseconds and greater.
摘要翻译：一种制造硅材料厚度的方法包括提供具有表面区域的硅锭材料，并通过表面区域引入具有约1-5MeV能量的多个颗粒到一定深度以限定切割区域和厚度在切割区域和表面区域之间可拆卸的材料。此外，该方法包括处理硅锭材料以释放在分裂区域附近的可分离材料的厚度，并引起形成独立厚度的材料，其特征在于载体寿命约10微秒，厚度范围为约20 微米至约150微米，厚度变化小于约5％。此外，该方法包括使用热处理工艺处理材料的独立厚度，以将载流子寿命恢复到约200微秒和更大。

66. 发明授权

US07629666B2 Method and structure for implanting bonded substrates for electrical conductivity 有权
公开(公告)号：US07629666B2
公开(公告)日：2009-12-08
申请号：US12157933
申请日：2008-06-12
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： H01L29/00
CPC分类号： H01L21/26513
摘要： A partially completed multi-layered substrate, e.g., silicon on silicon. The substrate has a thickness of material from a first substrate. The thickness of material comprises a first face region. The substrate has a second substrate having a second face region. Preferably, the first face region of the thickness of material is joined to the second face region of the second substrate. The substrate has an interface region formed between the first face region of the thickness of material and the second face region of the second substrate. A plurality of particles are implanted within a portion of the thickness of the material and a portion of the interface region to electrically couple a portion of the thickness of material to a portion of the second substrate.

67. 发明申请

US20090258496A1 Method for fabricating semiconductor devices using strained silicon bearing material 有权
标题翻译：使用应变硅轴承材料制造半导体器件的方法
公开(公告)号：US20090258496A1
公开(公告)日：2009-10-15
申请号：US12378033
申请日：2009-02-09
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： H01L21/311
CPC分类号： H01L29/045 , H01L29/78 , H01L29/7843 , H01L29/7848
摘要： A method of manufacturing an integrated circuit on semiconductor substrates, e.g., silicon wafer. The method includes providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing. In a specific embodiment, the semiconductor substrate has an overlying film of material with a second lattice with a second structure and a second spacing, the second spacing placing the film of material in a strain mode characterized by a first tensile and/or compressive mode along a single film surface crystal axis across a first portion of the film of material relative to the semiconductor substrate with the first structure and the first spacing. The method patterns a predetermined region of the first portion of the film of material to cause the first tensile and/or compressive mode in the first portion of the film of material to change to a second tensile and/or compressive mode in a resulting patterned portion of the first portion of the film of material. In a preferred embodiment, the patterns are made using a masking and etching process.
摘要翻译：一种在诸如硅晶片的半导体衬底上制造集成电路的方法。该方法包括提供一种半导体衬底，其特征在于具有第一结构和第一间隔的第一晶格。在一个具体的实施例中，半导体衬底具有覆盖的材料膜，具有第二晶格和第二间隔的材料，第二间隔将材料膜放置在以第一拉伸和/或压缩模式为特征的应变模式中相对于具有第一结构和第一间隔的半导体衬底的材料膜的第一部分上的单个膜表面晶轴。该方法将材料膜的第一部分的预定区域图案化以使材料膜的第一部分中的第一拉伸和/或压缩模式在所得到的图案部分中变为第二拉伸和/或压缩模式的材料的第一部分。在优选实施例中，使用掩模和蚀刻工艺制造图案。

68. 发明授权

US07547609B2 Method and structure for implanting bonded substrates for electrical conductivity 失效
标题翻译：用于植入用于导电性的键合衬底的方法和结构
公开(公告)号：US07547609B2
公开(公告)日：2009-06-16
申请号：US11280016
申请日：2005-11-15
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： H01L21/76
CPC分类号： H01L21/26513
摘要： A process for forming multi-layered substrates, e.g., silicon on silicon. The process includes providing a first substrate, which has a thickness of material to be removed. The thickness of material to be removed includes a first face region. The process includes joining the first face region of the first substrate to a second face region of a second substrate to form an interface region between the first face region of the first substrate and the second face region of the second substrate. The process includes removing the thickness of material from the first substrate while maintaining attachment of the first face region of the first substrate to the second face region of the second substrate. The process implants particles through the interface region to form a region of the particles within the vicinity of the interface region to electrically couple the thickness of material to the second substrate. In a preferred embodiment, the particles are conductive or can also have other characteristics that facilitates electrical contact or coupling between the first face region and the second face region according to a specific embodiment.
摘要翻译：用于形成多层基板的方法，例如硅上的硅。该方法包括提供第一基底，其具有待除去的材料的厚度。要去除的材料的厚度包括第一面区域。该方法包括将第一衬底的第一面区域连接到第二衬底的第二面区域，以在第一衬底的第一面区域和第二衬底的第二面区域之间形成界面区域。该方法包括从第一基板去除材料的厚度，同时保持第一基板的第一面区域与第二基板的第二面区域的连接。该过程通过界面区域投入颗粒以在界面区域附近形成颗粒的区域，以将材料的厚度电耦合到第二基底。在优选实施例中，根据具体实施例，颗粒是导电的或者还可以具有促进第一面区域和第二面部区域之间的电接触或耦合的其它特性。

69. 发明授权

US07462526B2 Method for fabricating semiconductor devices using strained silicon bearing material 失效
标题翻译：使用应变硅轴承材料制造半导体器件的方法
公开(公告)号：US07462526B2
公开(公告)日：2008-12-09
申请号：US11149783
申请日：2005-06-09
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： H01L21/00
CPC分类号： H01L29/045 , H01L29/78 , H01L29/7843 , H01L29/7848
摘要： A method of manufacturing an integrated circuit on semiconductor substrates, e.g., silicon wafer. The method includes providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing. In a specific embodiment, the semiconductor substrate has an overlying film of material with a second lattice with a second structure and a second spacing, the second spacing placing the film of material in a strain mode characterized by a first tensile and/or compressive mode along a single film surface crystal axis across a first portion of the film of material relative to the semiconductor substrate with the first structure and the first spacing. The method patterns a predetermined region of the first portion of the film of material to cause the first tensile and/or compressive mode in the first portion of the film of material to change to a second tensile and/or compressive mode in a resulting patterned portion of the first portion of the film of material. In a preferred embodiment, the patterns are made using a masking and etching process.
摘要翻译：一种在诸如硅晶片的半导体衬底上制造集成电路的方法。该方法包括提供一种半导体衬底，其特征在于具有第一结构和第一间隔的第一晶格。在一个具体的实施例中，半导体衬底具有覆盖的材料膜，具有第二晶格和第二间隔的材料，第二间隔将材料膜放置在以第一拉伸和/或压缩模式为特征的应变模式中相对于具有第一结构和第一间隔的半导体衬底的材料膜的第一部分上的单个膜表面晶轴。该方法将材料膜的第一部分的预定区域图案化以使材料膜的第一部分中的第一拉伸和/或压缩模式在所得到的图案部分中变为第二拉伸和/或压缩模式的材料的第一部分。在优选实施例中，使用掩模和蚀刻工艺制造图案。

70. 发明申请

US20080160661A1 Method and structure for fabricating solar cells using a layer transfer process 有权
标题翻译：使用层转移工艺制造太阳能电池的方法和结构
公开(公告)号：US20080160661A1
公开(公告)日：2008-07-03
申请号：US11784524
申请日：2007-04-05
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： H01L31/18 , H01L21/67
CPC分类号： H01L31/18 , Y10T29/41
摘要： A reusable silicon substrate device for use with layer transfer process. The device has a reusable substrate having a surface region, a cleave region, and a total thickness of material. The total thickness of material is at least N times greater than a first thickness of material to be removed. In a specific embodiment, the first thickness of material to be removed is between the surface region and the cleave region, whereupon N is an integer greater than about ten. The device also has a chuck member adapted to hold a handle substrate member in place. The chuck member is configured to hold the handle substrate in manner to facilitate bonding the handle substrate to the first thickness of material to be removed. In a preferred embodiment, the device has a mechanical pressure device operably coupled to the chuck member. The mechanical pressure device is adapted to provide a force to cause bonding of the handle substrate to the first thickness of material to be removed.
摘要翻译：一种可重复使用的硅衬底器件，用于层间传输工艺。该装置具有可重复使用的基底，其具有表面区域，切割区域和材料的总厚度。材料的总厚度比要去除的材料的第一厚度至少大N倍。在具体实施方案中，待除去的材料的第一厚度在表面区域和解理区域之间，因此N是大于约十的整数。该装置还具有适于将手柄基板部件保持在适当位置的卡盘部件。卡盘构件被构造成以便于将手柄衬底粘合到要移除的材料的第一厚度的方式保持手柄衬底。在优选实施例中，该装置具有可操作地联接到卡盘构件的机械压力装置。机械压力装置适于提供力以引起手柄基板与要去除的材料的第一厚度的结合。

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