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    • 62. 发明授权
    • Microcavity OLEDs for lighting
    • 微腔OLED用于照明
    • US08946689B2
    • 2015-02-03
    • US13575347
    • 2011-02-22
    • Franky So
    • Franky So
    • H01L33/00H01L51/52H01L51/00H01L27/32
    • H01L51/5271H01L27/3211H01L51/0037H01L51/0059H01L51/0085H01L51/5265H01L2251/5361
    • Various methods and systems are provided for related to organic light emitting diodes (OLEDs) having a microcavity In one embodiment, a white-light source includes a first microcavity organic light emitting diode (OLED) configured to emit a narrow spectrum of blue light, a second microcavity OLED configured to emit a narrow spectrum of green light, and a third microcavity OLED configured to emit a narrow spectrum of red light In another embodiment, a light source includes a plurality of OLEDs disposed on a glass substrate Each of the OLEDs is configured to emit light in substantially orthogonal to the glass substrate in a predefined spectrum Each of the OLEDs includes a semi-reflecting mirror, and an emitting layer, where the emitting layer in each OLED corresponds to a respective color of light emitted by the OLED.
    • 提供了与具有微腔的有机发光二极管(OLED)相关的各种方法和系统。在一个实施例中,白光源包括被配置为发射窄光谱的蓝光的第一微腔有机发光二极管(OLED), 第二微腔OLED被配置为发射窄光谱的绿光,以及构造成发射窄光谱的红光的第三微腔OLED。在另一实施例中,光源包括设置在玻璃基板上的多个OLED。每个OLED被配置 以预定光谱发射基本上与玻璃基板正交的光。每个OLED包括半反射镜和发光层,其中每个OLED中的发光层对应于由OLED发射的光的相应颜色。
    • 65. 发明授权
    • Determining leakage in matrix-structured electronic devices
    • 确定矩阵结构的电子设备中的泄漏
    • US07710365B2
    • 2010-05-04
    • US11645971
    • 2006-12-26
    • Franky SoFlorian PschenitzkaEgbert Hoefling
    • Franky SoFlorian PschenitzkaEgbert Hoefling
    • G09G3/30
    • G09G3/3216G01R31/3008G09G3/006
    • One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.
    • 本发明的一个实施例涉及用于识别矩阵结构的电子设备中的电流泄漏的高通量筛选技术。 因为可能发展为短路的元件在零工作时间具有相对高的漏电流,所以通过识别具有相对高的漏电流的元件,可以区分更有可能稍后发展短路的电子器件。 筛选技术包括执行以下动作:选择多个第一行之一; 对所选择的第一线施加第一电压; 对未选择的一条或多条第一条线施加第二电压; 浮动多条第二行; 并且一次测量第二条线上的电压,或者一次依次测量一条线或同时测量所有线。
    • 67. 发明申请
    • TRANSPARENT CONDUCTING ELECTRODE
    • 透明导电电极
    • US20100003511A1
    • 2010-01-07
    • US12497057
    • 2009-07-02
    • Franky So
    • Franky So
    • B32B15/04B05D5/12C23C14/34
    • C23C14/185B32B9/005B32B9/041B32B15/043B32B15/08B32B15/20B32B2255/205B32B2307/202B32B2307/412B32B2457/20B32B2551/00C23C14/086H01L31/022483Y10T428/265Y10T428/266
    • A transparent electrode multilayer film has at least one group III doped ZnO layer and at least one metal layer, where layers of doped ZnO alternate with metal layers. When a plurality of group III doped ZnO layers are present, the doped ZnO layers can have the same or different dopants and one or more dopants can be present in a doped ZnO layer. When a plurality of metal layers is present, the layers can be of the same or different metals, and a metal layer can be a single metal or a combination of two or more metals. The multilayer film can be free standing, but generally includes a substrate. Advantageous substrates are transparent and can be flexible for use as a flexible electrode. A method to form a transparent conductive multilayer film involves depositing at least one layer of a group III doped ZnO and at least one metal layer on a substrate.
    • 透明电极多层膜具有至少一个III族掺杂的ZnO层和至少一个金属层,其中掺杂的ZnO层与金属层交替。 当存在多个III族掺杂的ZnO层时,掺杂的ZnO层可以具有相同或不同的掺杂剂,并且一个或多个掺杂剂可以存在于掺杂的ZnO层中。 当存在多个金属层时,这些层可以是相同或不同的金属,并且金属层可以是单一金属或两种或更多种金属的组合。 多层膜可以是独立的,但通常包括基材。 有利的基材是透明的,并且可以灵活地用作柔性电极。 形成透明导电多层膜的方法包括在衬底上沉积至少一层III族掺杂的ZnO和至少一种金属层。
    • 69. 发明申请
    • Method and Apparatus for Light Emission Utilizing an OLED with a Microcavity
    • 利用具有微腔的OLED发光的方法和装置
    • US20080238308A1
    • 2008-10-02
    • US12100316
    • 2008-04-09
    • Franky So
    • Franky So
    • H01L51/50H01J9/02
    • H01L51/5036H01L51/5265
    • Provided is an OLED device and method of making the OLED device. According to an embodiment, the OLED device incorporates a microcavity structure including a dielectric mirror formed on a glass substrate, an anode formed above the dielectric mirror, an organic film layer formed above the anode, and a reflective electrode formed above the organic film layer such that the cavity is formed in the organic film layer by the dielectric mirror and the reflective electrode. The OLED device with microcavity structure can incorporate one or more phosphors deposited on an underside of the glass substrate such that light of additional wavelengths can be generated by the OLED device.
    • 提供了一种制造OLED器件的OLED器件和方法。 根据实施例,OLED器件包括微腔结构,其包括形成在玻璃基板上的电介质镜,形成在电介质镜上方的阳极,形成在阳极上方的有机膜层,以及形成在有机膜层上方的反射电极, 通过电介质镜和反射电极在有机膜层中形成空腔。 具有微腔结构的OLED器件可以结合一个或多个沉积在玻璃基底的下侧上的磷光体,使得可以由OLED器件产生附加波长的光。
    • 70. 发明申请
    • Determining leakage in matrix-structured electronic devices
    • 确定矩阵结构的电子设备中的泄漏
    • US20050258859A1
    • 2005-11-24
    • US10952601
    • 2004-09-28
    • Franky SoFlorian PschenitzkaEgbert Hoefling
    • Franky SoFlorian PschenitzkaEgbert Hoefling
    • G01R31/00G01R31/30G09G3/00G09G3/32
    • G09G3/3216G01R31/3008G09G3/006
    • One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.
    • 本发明的一个实施例涉及用于识别矩阵结构的电子设备中的电流泄漏的高通量筛选技术。 因为可能发展为短路的元件在零工作时间具有相对高的漏电流,所以通过识别具有相对高的漏电流的元件,可以区分更有可能稍后发展短路的电子器件。 筛选技术包括执行以下动作:选择多个第一行之一; 对所选择的第一线施加第一电压; 对未选择的一条或多条第一条线施加第二电压; 浮动多条第二行; 并且一次测量第二条线上的电压,或者一次依次测量一条线或同时测量所有线。