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61. 发明授权

US09000500B2 Image sensor with doped transfer gate 有权
标题翻译：具有掺杂传输门的图像传感器
公开(公告)号：US09000500B2
公开(公告)日：2015-04-07
申请号：US12942517
申请日：2010-11-09
申请人： Hung Q. Doan , Eric G. Stevens
发明人： Hung Q. Doan , Eric G. Stevens
IPC分类号： H01L31/113 , H01L27/146
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14806
摘要： An image sensor includes an array of pixels, with at least one pixel including a photodetector formed in a substrate layer and a transfer gate disposed adjacent to the photodetector. The substrate layer further includes multiple charge-to-voltage conversion regions. A single photodetector can transfer collected charge to a single charge-to-voltage conversion region, or alternatively multiple photodetectors can transfer collected charge to a common charge-to-voltage conversion region shared by the photodetectors. An implant region formed when dopants are implanted into the substrate layer to form source/drain implant regions is disposed in only a portion of each transfer gate while each charge-to-voltage conversion region is substantially devoid of the implant region.
摘要翻译：图像传感器包括像素阵列，其中至少一个像素包括形成在基底层中的光电检测器和邻近光电检测器设置的传输栅极。衬底层还包括多个电荷 - 电压转换区域。单个光电检测器可以将收集的电荷转移到单个电荷至电压转换区域，或者多个光电检测器可以将收集的电荷转移到由光电检测器共享的公共电荷 - 电压转换区域。当掺杂剂注入到衬底层中以形成源极/漏极注入区域时形成的注入区域仅设置在每个传输栅极的一部分中，而每个电荷 - 电压转换区域基本上没有植入区域。

62. 发明授权

US08772891B2 Lateral overflow drain and channel stop regions in image sensors 有权
标题翻译：图像传感器中的横向溢出漏极和通道停止区域
公开(公告)号：US08772891B2
公开(公告)日：2014-07-08
申请号：US12609257
申请日：2009-10-30
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L31/101 , H01L27/146 , H01L27/148
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.
摘要翻译：使用双掩模工艺制造横向溢流漏斗和通道停止。每个横向溢流排水口形成在相应的通道停止件内。由于使用两个掩模层，每个横向溢出漏极的一个边缘与相应的通道停止件的边缘对准或基本对准。

63. 发明授权

US08618458B2 Back-illuminated CMOS image sensors 有权
标题翻译：背照式CMOS图像传感器
公开(公告)号：US08618458B2
公开(公告)日：2013-12-31
申请号：US12266764
申请日：2008-11-07
申请人： John P. McCarten , Joseph R. Summa , Cristian A. Tivarus , Todd J. Anderson , Eric G. Stevens
发明人： John P. McCarten , Joseph R. Summa , Cristian A. Tivarus , Todd J. Anderson , Eric G. Stevens
IPC分类号： H01L27/00
CPC分类号： H01L27/14643 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14689
摘要： A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.
摘要翻译：背照式图像传感器包括设置在电连接到传感器层的绝缘层和电路层之间的传感器层。成像区域包括在传感器层中形成多个光电检测器和跨越成像区域的阱。阱可以设置在传感器层的背面和光电检测器之间，或者阱可以是与传感器层的背面相邻形成的掩埋阱，其中区域包括形成在光电探测器和掩埋阱之间。一个或多个侧孔可以横向邻近于每个光电检测器形成。阱中的掺杂剂具有使掺杂剂积聚在传感器层和绝缘层之间的界面的传感器层侧上的分离系数。

64. 发明授权

US08329499B2 Method of forming lateral overflow drain and channel stop regions in image sensors 有权
标题翻译：在图像传感器中形成横向溢流漏极和通道停止区域的方法
公开(公告)号：US08329499B2
公开(公告)日：2012-12-11
申请号：US12609296
申请日：2009-10-30
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L21/426 , H01L31/14
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.
摘要翻译：使用双掩模工艺制造横向溢流漏斗和通道停止。每个横向溢流排水口形成在相应的通道停止件内。由于使用两个掩模层，每个横向溢出漏极的一个边缘与相应的通道停止件的边缘对准或基本对准。

65. 发明授权

US08101450B1 Photodetector isolation in image sensors 有权
标题翻译：图像传感器中的光电检测器隔离
公开(公告)号：US08101450B1
公开(公告)日：2012-01-24
申请号：US12966238
申请日：2010-12-13
申请人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
发明人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
IPC分类号： H01L21/00 , H01L21/8238 , H01L21/176
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/14683
摘要： Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.
摘要翻译：浅沟槽隔离区设置在与光电检测器的收集区域相邻并且横向邻近电荷 - 电压转换区域的n型硅半导体层中。浅沟槽隔离区域各自包括设置在硅半导体层中的沟槽和沿着每个沟槽的内部底部和侧壁设置的第一介电结构。第二电介质结构设置在钉扎层之上。电介质结构包括设置在氧化物层上的氮化硅层。 n型隔离层仅沿着沟槽的外部底部的一部分和紧邻光电检测器的沟槽的外侧壁设置。 n型隔离层不沿着沟槽的底部或相对的外侧壁的剩余部分设置。

66. 发明授权

US08018016B2 Back-illuminated image sensors having both frontside and backside photodetectors 有权
标题翻译：具有前侧和后侧光电检测器的背照式图像传感器
公开(公告)号：US08018016B2
公开(公告)日：2011-09-13
申请号：US12492460
申请日：2009-06-26
申请人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa , Eric G. Stevens , Hung Q. Doan , Robert M. Guidash
发明人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa , Eric G. Stevens , Hung Q. Doan , Robert M. Guidash
IPC分类号： H01L31/101
CPC分类号： H01L27/14603 , H01L27/14605 , H01L27/14632 , H01L27/1464 , H01L27/14647 , H01L27/14687 , H01L27/14689 , H01L31/035272
摘要： A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. An insulating layer is disposed over the backside. A circuit layer is formed adjacent to the frontside such that the sensor layer is positioned between the circuit layer and the insulating layer. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors is formed in the sensor layer contiguous to portions of the backside region of the second conductivity type.
摘要翻译：背照式图像传感器包括第一导电类型的传感器层，其具有前侧和与前侧相对的背面。绝缘层设置在背面上。电路层邻近前侧形成，使得传感器层位于电路层和绝缘层之间。第二导电类型的一个或多个前侧区域形成在传感器层的前侧的至少一部分中。第二导电类型的背面区域形成在传感器层的背面。第一导电类型的多个前端光电检测器设置在传感器层中。在与第二导电类型的背侧区域的部分邻接的传感器层中形成有与多个前端光电检测器分离的第一导电类型的不同多个背面光电检测器。

67. 发明申请

US20110159635A1 METHOD FOR FORMING DEEP ISOLATION IN IMAGERS 有权
标题翻译：在图像中形成深度隔离的方法
公开(公告)号：US20110159635A1
公开(公告)日：2011-06-30
申请号：US12942507
申请日：2010-11-09
申请人： Hung Q. Doan , Eric G. Stevens
发明人： Hung Q. Doan , Eric G. Stevens
IPC分类号： H01L31/18
CPC分类号： H01L27/1463 , H01L21/2253 , H01L27/14683
摘要： An image sensor having an imaging area that includes a substrate layer and a plurality of pixels formed therein. Multiple pixels each include a photodetector formed in the substrate layer. Isolation layers are formed in the substrate layer by performing a series of implants of one or more dopants of a first conductivity type into the substrate layer. Each isolation layer implant is performed with a different energy than the other isolation layer implants in the series and each implant implants the one or more dopants into the entire imaging area. The photodetectors are formed in the substrate layer by performing a series of implants of one or more dopants of a second conductivity type into each pixel in the substrate layer. Each photodetector implant is performed with a different energy than the other photodetector implants in the series.
摘要翻译：一种图像传感器，其具有包括基板层和形成在其中的多个像素的成像区域。多个像素各自包括形成在基底层中的光电检测器。通过将一种或多种第一导电类型的掺杂剂的一系列植入物进入衬底层，在衬底层中形成隔离层。每个隔离层植入物以与串联中的其它隔离层植入物不同的能量来执行，并且每个植入物将一种或多种掺杂剂植入整个成像区域。通过在衬底层中的每个像素中执行一系列对第二导电类型的掺杂剂的一种或多种注入物，在衬底层中形成光电检测器。每个光电探测器植入物以与该系列中的其它光电检测器植入物不同的能量来执行。

68. 发明授权

US07402882B2 Methods to eliminate amplifier glowing artifact in digital images captured by an image sensor 有权
标题翻译：消除由图像传感器捕获的数字图像中放大器发光伪像的方法
公开(公告)号：US07402882B2
公开(公告)日：2008-07-22
申请号：US10924061
申请日：2004-08-23
申请人： Shen Wang , William F. DesJardin , Robert P. Fabinski , David N. Nichols , Christopher Parks , Eric G. Stevens
发明人： Shen Wang , William F. DesJardin , Robert P. Fabinski , David N. Nichols , Christopher Parks , Eric G. Stevens
IPC分类号： H01L29/72
CPC分类号： H01L27/14601 , H01L27/14623 , H01L27/14806
摘要： A charge coupled device includes a substrate; a plurality of image pixels arranged in a two dimensional array in the substrate for capturing an electronic representation of an image and for transferring charge in a first direction; a transfer mechanism for transferring charge in a second direction from the plurality of the image pixels for further processing; an amplifier structure disposed in the substrate that receives the charge from the transfer mechanism and converts the charge into a voltage signal; a first opaque layer spanning over the amplifier for blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied; and a second opaque layer deposited into the substrate for also blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied.
摘要翻译：电荷耦合器件包括衬底; 在基板中以二维阵列布置的多个图像像素，用于捕获图像的电子表示并用于沿第一方向传送电荷; 用于从多个图像像素沿第二方向传送电荷以用于进一步处理的传送机构; 放大器结构，设置在所述基板中，从所述传送机构接收所述电荷并将所述电荷转换为电压信号; 跨越放大器的第一不透明层，用于阻挡当施加电压时由放大器结构内的电场固有地产生的近红外光; 以及沉积到衬底中的第二不透明层，用于当施加电压时也阻挡由放大器结构内的电场固有地产生的近红外光。

69. 发明授权

US06878919B1 Thin lightshield process for solid-state image sensors 有权
标题翻译：固态图像传感器的薄型遮光罩工艺
公开(公告)号：US06878919B1
公开(公告)日：2005-04-12
申请号：US10833386
申请日：2004-04-28
申请人： David N. Nichols , Eric G. Stevens , Stephen L. Kosman
发明人： David N. Nichols , Eric G. Stevens , Stephen L. Kosman
IPC分类号： H01L21/00 , H01L21/4763 , H01L27/146 , H01L31/02
CPC分类号： H01L27/14623 , H01L27/14636 , H01L27/14685
摘要： An image sensor includes a substrate having photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metallization structure, wherein the first layer forms light shield regions over selected portions of the photosensitive area as well forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area; and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging areas and the second layer overlays edges of the first layer.
摘要翻译：图像传感器包括具有感光区域的基板; 跨越衬底的绝缘体; 以及多层金属化结构的第一和第二层，其中所述第一层在所述感光区域的选定部分上形成光屏蔽区域，并形成电路互连和阻挡区域，以防止在非接触的接触处尖峰进入衬底或栅极成像面积并且第二层仅在非成像区域上跨越第一层的互连和阻挡区域，并且第二层覆盖第一层的边缘。

70. 发明授权

US06867062B2 Method for forming light shield process for solid-state image sensor with multi-metallization layer 有权
标题翻译：用于形成具有多金属化层的固态图像传感器的遮光过程的方法
公开(公告)号：US06867062B2
公开(公告)日：2005-03-15
申请号：US10641724
申请日：2003-08-15
申请人： Eric G. Stevens
发明人： Eric G. Stevens
IPC分类号： H01L27/146 , H01L27/148 , H01L21/00
CPC分类号： H01L27/14601 , H01L27/14806
摘要： An image sensor includes a substrate containing photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metalization structure wherein the first layer forms the light shield regions over portions of the photosensitive area as well as forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area, and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging area.
摘要翻译：图像传感器包括含有感光区域的基板; 跨越衬底的绝缘体; 以及多层金属化结构的第一和第二层，其中第一层在感光区域的部分上形成遮光区域，以及形成电路互连和阻挡区域，以防止在非接触的接触处尖峰进入衬底或栅极以及仅在非成像区域上跨越第一层的互连和屏障区域的第二层。

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