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61. 发明申请

US20050200569A1 Plasma display panel and energy recovery circuit timing control method thereof 审中-公开
标题翻译：等离子体显示面板及能量回收电路的时序控制方法
公开(公告)号：US20050200569A1
公开(公告)日：2005-09-15
申请号：US11077454
申请日：2005-03-09
申请人： Yong-Jin Kim , Seung-Woo Chang , Woo-Jin Kim , Hee-Hwan Kim
发明人： Yong-Jin Kim , Seung-Woo Chang , Woo-Jin Kim , Hee-Hwan Kim
IPC分类号： G09G3/20 , G09F9/313 , G09G3/28 , G09G3/288 , G09G3/291 , G09G3/294 , G09G3/296 , G09G3/298 , H01J17/49
CPC分类号： G09G3/2942 , G09G2310/066 , G09G2360/16
摘要： A plasma display panel including a plurality of address electrodes, a plurality of scan electrodes, and a plurality of sustain electrodes, and an energy recovery circuit (ERC) timing control method thereof. The plasma display panel includes a plasma panel, a controller, an address electrode driver, a sustain electrode driver, and a scan electrode driver. A load ratio is determined from an image signal. The ERC timing is determined corresponding to the load ratio or the automatic power control level corresponding to the load ratio. The sustain electrodes and the scan electrodes operate in response to the determined ERC timing.
摘要翻译：一种包括多个寻址电极，多个扫描电极和多个维持电极的等离子体显示面板及其能量恢复电路（ERC）定时控制方法。等离子体显示面板包括等离子面板，控制器，地址电极驱动器，维持电极驱动器和扫描电极驱动器。根据图像信号确定负载比。根据与负载比对应的负载比或自动功率控制电平来确定ERC定时。维持电极和扫描电极响应于所确定的ERC定时而工作。

62. 发明申请

US20050007292A1 Loop antenna for a mobile terminal capable of reducing specific absorption rate 失效
公开(公告)号：US20050007292A1
公开(公告)日：2005-01-13
申请号：US10811548
申请日：2004-03-29
申请人： Ju-Hyung Lee , Yong-Jin Kim
发明人： Ju-Hyung Lee , Yong-Jin Kim
IPC分类号： H01Q1/24 , H01Q7/00
CPC分类号： H01Q1/243 , H01Q1/245 , H01Q7/00
摘要： A loop antenna for a mobile terminal capable of reducing SAR. The loop antenna has three lines. The first line generates and transmits predetermined electric waves upon receiving current from an oscillator for oscillating power and has a connection point to connect an external line thereto. The second line includes a first end connected to a printed circuit board to ground current supplied to the first line and a second end having an opened structure. The third line has a first end connected to one side of the first line through the connection point and a second end connected to one side of the second line coupled to the printed circuit board in order to receive current from the first line through the connection point and transmit current into the second line.

63. 发明申请

US20050001252A1 Semiconductor device with trench gate type transistor and method of manufacturing the same 有权
标题翻译：具有沟槽栅型晶体管的半导体器件及其制造方法
公开(公告)号：US20050001252A1
公开(公告)日：2005-01-06
申请号：US10858727
申请日：2004-06-02
申请人： Yong-Jin Kim , Kyeong-Koo Chi , Chang-Jin Kang , Hyoung-Sub Kim , Myeong-Cheol Kim , Tae-Rin Chung , Sung-Hoon Chung , Ji-Young Kim
发明人： Yong-Jin Kim , Kyeong-Koo Chi , Chang-Jin Kang , Hyoung-Sub Kim , Myeong-Cheol Kim , Tae-Rin Chung , Sung-Hoon Chung , Ji-Young Kim
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/8242 , H01L27/108 , H01L29/78
CPC分类号： H01L29/66621 , H01L21/823437 , H01L27/10876 , H01L29/7834
摘要： A semiconductor device includes a plurality of gate trenches, each of which has first inner walls, which face each other in a first direction which is perpendicular to a second direction in which active regions extend, and second inner walls, which face each other in the second direction in which the active regions extends. An isolation layer contacts a gate insulating layer throughout the entire length of the first inner walls of the gate trenches including from entrance portions of the gate trenches to bottom portions of the gate trenches, and a plurality of channel regions are disposed adjacent to the gate insulating layers in the semiconductor substrate along the second inner walls and the bottom portions of the gate trenches.
摘要翻译：半导体器件包括多个栅极沟槽，每个栅极沟槽具有第一内壁，该第一内壁沿与第一方向相对的第一方向，该第一方向垂直于有源区域延伸的第二方向;以及第二内壁，活动区域延伸的第二方向。隔离层在包括从栅极沟槽的入口部分到栅极沟槽的底部的栅极沟槽的整个长度的整个长度上接触栅极绝缘层，并且多个沟道区域邻近栅极绝缘体沿着第二内壁和栅极沟槽的底部的半导体衬底中的层。

64. 发明授权

US06171926B2 Methods for fabricating integrated circuit capacitor electrodes using first and second insulating layers and a buffer layer 有权
标题翻译：使用第一和第二绝缘层和缓冲层制造集成电路电容器电极的方法
公开(公告)号：US06171926B2
公开(公告)日：2001-01-09
申请号：US09289364
申请日：1999-04-09
申请人： Kwang-Youl Chun , Young-Woo Park , Yong-Jin Kim
发明人： Kwang-Youl Chun , Young-Woo Park , Yong-Jin Kim
IPC分类号： H01L2120
CPC分类号： H01L28/92 , H01L27/10814 , H01L28/60 , H01L28/84
摘要： Integrated circuit capacitor lower electrodes are fabricated by forming a plurality of spaced-apart contact pads on an integrated circuit substrate. A first insulating layer is formed on the integrated circuit substrate including on the contact pads. A plurality of spaced-apart conductive lines is formed on the first insulating layer that are laterally offset from the plurality of spaced-apart contact pads. A second insulating layer is formed on the first insulating layer including on the conductive lines. A buffer layer comprising material that is different from the second insulating layer, is formed on the second insulating layer. Openings are formed that extend through the buffer layer, through the second insulating layer and into the first insulating layer between the conductive lines to expose the contact pads. A conductive layer is formed in the openings and on the buffer layer. The conductive layer is etched between the openings to form the capacitor lower electrodes. The buffer layer preferably comprises material that has lower reflectivity than that of the second insulating layer and also preferably comprises material that has an etch rate for a predetermined etchant, that is intermediate that of the second insulating layer and the conductive layer. The first and second insulating layers preferably comprise silicon dioxide, the buffer layer preferably comprises at least one of silicon nitride and silicon oxynitride and the conductive layer preferably comprises polysilicon. During etching, a polymer preferably is formed on the capacitor lower electrode sidewalls adjacent the buffer layer. The etchant preferably is a plasma etchant including sulfur hexafluoride, chlorine and/or nitrogen gases.
摘要翻译：集成电路电容器下电极通过在集成电路基板上形成多个间隔开的接触焊盘来制造。在包括接触焊盘的集成电路基板上形成第一绝缘层。在第一绝缘层上形成多个间隔开的导电线，其横向偏离多个间隔开的接触焊盘。在包括导电线的第一绝缘层上形成第二绝缘层。包含与第二绝缘层不同的材料的缓冲层形成在第二绝缘层上。形成开口，其延伸穿过缓冲层，穿过第二绝缘层并进入导线之间的第一绝缘层，以露出接触焊盘。在开口和缓冲层上形成导电层。在开口之间蚀刻导电层以形成电容器下电极。缓冲层优选地包括具有比第二绝缘层低的反射率的材料，并且还优选地包括具有预定蚀刻剂的蚀刻速率的材料，其与第二绝缘层和导电层的蚀刻速率相等。第一绝缘层和第二绝缘层优选地包括二氧化硅，缓冲层优选地包括氮化硅和氮氧化硅中的至少一种，并且导电层优选地包括多晶硅。在蚀刻期间，优选在与缓冲层相邻的电容器下电极侧壁上形成聚合物。蚀刻剂优选是等离子体蚀刻剂，包括六氟化硫，氯和/或氮气。

65. 发明授权

US5953328A Medium access control protocol and method for wireless ATM networks 失效
标题翻译：无线ATM网络的媒体接入控制协议和方法
公开(公告)号：US5953328A
公开(公告)日：1999-09-14
申请号：US851722
申请日：1997-05-05
申请人： Yong-Jin Kim , Jang-Kyung Kim
发明人： Yong-Jin Kim , Jang-Kyung Kim
IPC分类号： H04B7/185 , H04L12/28 , H04L12/70 , H04Q11/04 , H04B7/212
CPC分类号： H04W74/002 , H04B7/18582 , H04Q11/0478 , H04L2012/5607 , H04L2012/5675 , H04W72/0406 , H04W76/02 , H04W76/06
摘要： A medium access control protocol for wireless ATM network in communication protocol for controlling an access between a plurality of mobile terminals and an access control station in the wireless ATM system is provided, including: an up-stream frame for controlling a medium access by enabling the plurality of mobile terminals to transmit connection control data and status data of the terminal; and a down-stream frame for controlling the medium access by enabling the access control station receiving the up-stream frame to transmit the slot allocation data and the connection control data to the mobile terminals.
摘要翻译：提供了一种用于在通信协议中用于无线ATM网络中的用于控制多个移动终端与无线ATM系统中的接入控制站之间的接入的媒体接入控制协议，包括：用于控制媒体接入的上行帧，多个移动终端发送终端的连接控制数据和状态数据; 以及下行帧，用于通过使接入上行帧的接入控制站向移动终端发送时隙分配数据和连接控制数据来控制媒体接入。

66. 发明授权

US5627640A Method for measuring radical species distribution in plasma and an apparatus therefor 失效
标题翻译：用于测量血浆中自由基物质分布的方法及其装置
公开(公告)号：US5627640A
公开(公告)日：1997-05-06
申请号：US588308
申请日：1996-01-18
申请人： Hong-Young Chang , Pyung-Woo Lee , Yong-Jin Kim
发明人： Hong-Young Chang , Pyung-Woo Lee , Yong-Jin Kim
IPC分类号： G01N21/73 , G01J3/30
CPC分类号： G01N21/73
摘要： The present invention relates to a method for measuring radical species distribution in plasma by determining the intensity of the light emitted from the radical species and plasma parameters in plasma with the aid of optical and electrostatic probes, and an apparatus for measuring the radical species distribution. The method of the invention comprises the steps of: (i) measuring integral light intensity in a vacuum container by an optical probe inserted to the vacuum container; (ii) determining light intensity at each point of the vacuum container by differentiating the integral light intensity; (iii) measuring current and voltage applied to the electrostatic probe in the vacuum container; (iv) determining plasma parameters from the measured current and voltage; and, (v) measuring distribution of radical species from the light intensity and plasma parameters.
摘要翻译：本发明涉及通过使用光学和静电探针来测定从自由基物质发射的光的强度和等离子体中的等离子体参数以及用于测量自由基物质分布的装置来测量等离子体中的自由基物质分布的方法。本发明的方法包括以下步骤：（i）通过插入真空容器的光学探针测量真空容器中的积分光强度; （ii）通过微分积分光强度来确定真空容器的每个点处的光强度; （iii）测量施加到真空容器中的静电探针的电流和电压; （iv）从所测量的电流和电压确定等离子体参数; 和（v）从光强度和等离子体参数测量自由基物质的分布。

67. 发明授权

US08671549B2 Transmission mount type of side assembling 有权
标题翻译：传动安装式侧装
公开(公告)号：US08671549B2
公开(公告)日：2014-03-18
申请号：US13222917
申请日：2011-08-31
申请人： Hyuk Kim , Yong-Jin Kim , Seung-Won Kim , Jun-Haeng Heo , Kong-Sup Jung , Jong-Hoon Lee
发明人： Hyuk Kim , Yong-Jin Kim , Seung-Won Kim , Jun-Haeng Heo , Kong-Sup Jung , Jong-Hoon Lee
IPC分类号： F16M11/04 , B21D53/88
CPC分类号： B23P19/04 , B60K5/12 , F16F15/08 , Y10T29/49622 , Y10T29/49826 , Y10T29/49963
摘要： A transmission mount type of side assembling includes a cylindrical insulator; a core having a plurality of longitudinal holes and inserted in the insulator; a side stopper having a support connected to one end of the core in contact with the inner side of the insulator and a protrusion protruding outside the insulator from the support; a cylindrical case accommodating the core, the side stopper, and the insulator; and a plurality of bolts that is longer than the case and inserted through holes in the core and the side stopper from a side to protrude outside the case, such that it can simplify the assembly process of fastening a transmission to a car body and reduce the manufacturing cost, without changing the existing manufacturing line, and ensure safety in assembly.
摘要翻译：传动安装型侧组装包括圆柱形绝缘体; 具有多个纵向孔并插入绝缘体的芯体; 侧挡块，其具有连接到所述芯的与所述绝缘体的内侧接触的一端的支撑件和从所述支撑件突出到所述绝缘体外部的突起; 容纳所述芯部，所述侧部止动件和所述绝缘体的圆筒形壳体; 以及多个螺栓，其比所述壳体长并且从所述芯体中的孔和所述侧挡块插入到所述壳体的外侧，从而可以简化将传动件紧固到车身的组装过程，并且减少制造成本，不改变现有生产线，确保组装安全。

68. 发明申请

US20130251966A1 LOW TEMPERATURE SINTERING CONDUCTIVE METAL FILM AND PREPARATION METHOD THEREOF 有权
标题翻译：低温烧结导电金属薄膜及其制备方法
公开(公告)号：US20130251966A1
公开(公告)日：2013-09-26
申请号：US13991130
申请日：2011-10-20
申请人： Ji-Hun Yu , Sangsun Yang , Yong-Jin Kim
发明人： Ji-Hun Yu , Sangsun Yang , Yong-Jin Kim
IPC分类号： C09D11/00 , H01B1/22 , H05K3/00
CPC分类号： C09D11/52 , B22F1/0022 , B22F1/007 , B22F1/0074 , B82Y30/00 , H05K3/12 , H05K3/1283 , Y10T428/24909 , Y10T428/24917 , Y10T428/256
摘要： A low-temperature sintered conductive metal ink and a method for preparing the same are provided. To be specific, the preparation method includes the following steps of: preparing the conductive film or pattern by printing a conductive metal ink including metal nanocolloids, metal salts, and polymers reacted with the metal salts and preparing the metal nanocolloids (step 1); preparing a mixture by mixing the metal salts and polymers (step 2); preparing the metal ink by stirring the metal nanocolloids and the metal salt/polymer mixture prepared at steps 1 and 2 (step 3); printing the metal ink prepared at step 3 (step 4); and drying and thermally treating a product printed at step 4 (step 5).
摘要翻译：提供了一种低温烧结导电金属油墨及其制备方法。具体而言，该制备方法包括以下步骤：通过印刷包含金属纳米胶体，金属盐和与金属盐反应的聚合物并制备金属纳米胶体的导电金属油墨来制备导电膜或图案（步骤1）。通过混合金属盐和聚合物制备混合物（步骤2）; 通过搅拌金属纳米胶体和步骤1和2制备的金属盐/聚合物混合物（步骤3）制备金属油墨; 印刷在步骤3（步骤4）制备的金属油墨; 并干燥和热处理在步骤4打印的产品（步骤5）。

69. 发明授权

US08498731B2 Method of using process-parameter prognostic system for predicting shape of semiconductor structure 有权
标题翻译：使用过程参数预测系统预测半导体结构形状的方法
公开(公告)号：US08498731B2
公开(公告)日：2013-07-30
申请号：US13207829
申请日：2011-08-11
申请人： Kye-Hyun Baek , Yoon-Jae Kim , Yong-Jin Kim
发明人： Kye-Hyun Baek , Yoon-Jae Kim , Yong-Jin Kim
IPC分类号： G06F19/00
CPC分类号： H01J37/32935
摘要： Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.
摘要翻译：提供了一种用于预测半导体结构的形状的工艺参数预测系统，具有工艺参数预测系统的半导体制造装置及其使用方法。过程参数预测系统可以具有过程预测单元和过程变化点对应单元。处理预测单元和处理变化点对应单元可以使用半导体结构的测量参数和对应于半导体结构的等离子体的传感器参数来获得预测参数。

70. 发明申请

US20130161111A1 MOUNTING STRUCTURE OF THREE-CYLINDER ENGINE 审中-公开
标题翻译：三缸发动机安装结构
公开(公告)号：US20130161111A1
公开(公告)日：2013-06-27
申请号：US13614392
申请日：2012-09-13
申请人： Yong-Joo Kim , Min-Sup Lee , Yong-Jin Kim
发明人： Yong-Joo Kim , Min-Sup Lee , Yong-Jin Kim
IPC分类号： B60K5/12 , B60K17/00
CPC分类号： B60K5/04 , B60K5/1216
摘要： A mounting structure of a three-cylinder engine is mounted in a car body transversely but is installed on engine and transmission mounts built on opposing sides in the width direction of the vehicle so that its weight can be supported, wherein a roll mount controls roll moment. The center of mass of the engine and the transmission is the center of rotation where a longitudinal pitch axis, a lateral roll axis and a vertical yaw axis all cross each other, but the roll mount is combined with the engine or the transmission so that the combination point lies on the yaw axis. The mounting structure can improve the NVH performance by suppressing the pitch moment and inducing the yaw moment and by more efficiently insulating the vibration caused by the yaw moment while maintaining the common platform.
摘要翻译：三缸发动机的安装结构横向地安装在车身中，但安装在内置在车辆宽度方向的相对侧上的发动机和变速器架上，使其重量可以被支撑，其中辊安装件控制辊矩。发动机和变速器的质量中心是旋转中心，其中纵向俯仰轴线，横向侧倾轴线和垂直偏转轴线都彼此交叉，但是辊架与发动机或变速器组合，使得组合点位于偏航轴上。安装结构可以通过抑制俯仰力矩并引起横摆力矩并且通过更有效地隔离由偏转力矩引起的振动同时保持公共平台来提高NVH性能。

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