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1. 发明授权

US06288493B1 Antenna device for generating inductively coupled plasma 有权
标题翻译：用于产生电感耦合等离子体的天线装置
公开(公告)号：US06288493B1
公开(公告)日：2001-09-11
申请号：US09562902
申请日：2000-05-02
申请人： Yong-Kwan Lee , Nam-Sik Yoon , Sung-Sik Kim , Pyung-Woo Lee , Hong-Young Chang
发明人： Yong-Kwan Lee , Nam-Sik Yoon , Sung-Sik Kim , Pyung-Woo Lee , Hong-Young Chang
IPC分类号： H05H124
CPC分类号： H01J37/321 , H05H1/46
摘要： The invention relates to an antenna device of a low impedance for generating a large quantity of inductively coupled plasma to process a large size of a specimen with adjustment for a uniform distribution in the density of plasma, comprising: a high frequency power source; a first antenna for receiving the high frequency power supplied from the high frequency power source; and a second antenna connected in parallel with the first antenna for receiving the high frequency power supplied from the high frequency power source, wherein a resonant state is kept between the first and second antennas.
摘要翻译：本发明涉及一种用于产生大量电感耦合等离子体的低阻抗天线装置，用于对等离子体密度进行调整以调整大尺寸样品，包括：高频电源; 用于接收从高频电源提供的高频电力的第一天线; 以及与第一天线并联连接的第二天线，用于接收从高频电源提供的高频电力，其中谐振状态保持在第一和第二天线之间。

2. 发明授权

US5627640A Method for measuring radical species distribution in plasma and an apparatus therefor 失效
标题翻译：用于测量血浆中自由基物质分布的方法及其装置
公开(公告)号：US5627640A
公开(公告)日：1997-05-06
申请号：US588308
申请日：1996-01-18
申请人： Hong-Young Chang , Pyung-Woo Lee , Yong-Jin Kim
发明人： Hong-Young Chang , Pyung-Woo Lee , Yong-Jin Kim
IPC分类号： G01N21/73 , G01J3/30
CPC分类号： G01N21/73
摘要： The present invention relates to a method for measuring radical species distribution in plasma by determining the intensity of the light emitted from the radical species and plasma parameters in plasma with the aid of optical and electrostatic probes, and an apparatus for measuring the radical species distribution. The method of the invention comprises the steps of: (i) measuring integral light intensity in a vacuum container by an optical probe inserted to the vacuum container; (ii) determining light intensity at each point of the vacuum container by differentiating the integral light intensity; (iii) measuring current and voltage applied to the electrostatic probe in the vacuum container; (iv) determining plasma parameters from the measured current and voltage; and, (v) measuring distribution of radical species from the light intensity and plasma parameters.
摘要翻译：本发明涉及通过使用光学和静电探针来测定从自由基物质发射的光的强度和等离子体中的等离子体参数以及用于测量自由基物质分布的装置来测量等离子体中的自由基物质分布的方法。本发明的方法包括以下步骤：（i）通过插入真空容器的光学探针测量真空容器中的积分光强度; （ii）通过微分积分光强度来确定真空容器的每个点处的光强度; （iii）测量施加到真空容器中的静电探针的电流和电压; （iv）从所测量的电流和电压确定等离子体参数; 和（v）从光强度和等离子体参数测量自由基物质的分布。

3. 发明授权

US06350650B1 Method for fabricating a semiconductor memory device 有权
标题翻译：半导体存储器件的制造方法
公开(公告)号：US06350650B1
公开(公告)日：2002-02-26
申请号：US09710958
申请日：2000-11-14
申请人： Pyung Woo Lee
发明人： Pyung Woo Lee
IPC分类号： H01L218242
CPC分类号： H01L27/10885 , H01L27/10814 , H01L27/10855 , H01L27/10888 , H01L27/10894
摘要： A method of fabricating a semiconductor memory device is provided. In accordance with preferred embodiments of methods of the present invention, a cell array region and a peripheral circuitry region are defined by forming a field region on the surface of a semiconductor. In the cell array region, a number of wordlines are formed at a predetermined interval. Each region demarcated by the wordlines is filled with a semiconductor material in which source region, drain region and contact regions for connection between capacitors and bitlines are formed. Then, exposed entire surfaces in the cell array region and in the peripheral circuitry region are planarized. On the planarized surface, bitlines are formed without forming bitline contacts. In order to insulate the bitlines from each other, an insulation sidewall spacer is formed on each sidewall of the bitlines.
摘要翻译：提供一种制造半导体存储器件的方法。根据本发明的方法的优选实施例，通过在半导体的表面上形成场区来限定电池阵列区域和外围电路区域。在单元阵列区域中，以预定间隔形成多个字线。由字线划定的每个区域填充有半导体材料，其中形成用于连接电容器和位线之间的源极区域，漏极区域和接触区域。然后，将单元阵列区域和外围电路区域中的整个表面暴露出来。在平坦化表面上形成位线，而不形成位线接触。为了使位线彼此绝缘，在位线的每个侧壁上形成绝缘侧壁间隔物。

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