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61. 发明申请

US20060251888A1 Pressure sensitive adhesive (PSA) laminates 审中-公开
标题翻译：压敏粘合剂（PSA）层压板
公开(公告)号：US20060251888A1
公开(公告)日：2006-11-09
申请号：US11178848
申请日：2005-07-11
申请人： Richard Lane , Derek Bamborough , Roelof Luth , Daniel Klosiewicz
发明人： Richard Lane , Derek Bamborough , Roelof Luth , Daniel Klosiewicz
IPC分类号： B32B7/12
CPC分类号： B32B27/32 , B32B7/06 , B32B7/12 , B32B25/08 , B32B25/16 , B32B27/08 , B32B27/16 , B32B27/20 , B32B27/302 , B32B2250/24 , B32B2255/10 , B32B2255/26 , B32B2270/00 , B32B2274/00 , B32B2307/31 , B32B2307/518 , B32B2307/542 , B32B2307/546 , B32B2307/554 , B32B2307/5825 , B32B2307/7242 , B32B2307/748 , B32B2307/75 , B32B2405/00 , B32B2519/00 , C09J7/22 , C09J7/243 , C09J7/38 , C09J2421/00 , C09J2423/006 , C09J2453/00 , Y10T428/28 , Y10T428/2848
摘要： A PSA laminate is provided comprising: a) at least one outer filmic layer (A) comprising at least one filmic polymer; b) at least one adhesive base layer (B) comprising at least one adhesive base polymer; and c) at least one tackifier layer (C) comprising at least one tackifier and at least one polymer; wherein the pressure sensitive adhesive laminate is obtainable by co-extruding the outer filmic layer (A) with the adhesive base layer (B) to produce a non-adhesive laminate and applying the tackifier layer (C) to the non-adhesive laminate to produce the PSA laminate.
摘要翻译：提供了一种PSA层压体，其包括：a）至少一个包含至少一种膜状聚合物的外膜层（A） b）至少一个包含至少一种粘合剂基础聚合物的粘合剂基层（B）; 和c）至少一种包含至少一种增粘剂和至少一种聚合物的增粘剂层（C）; 其中所述压敏粘合剂层压体可通过将所述外部薄膜层（A）与所述粘合剂基底层（B）共挤出而获得，以产生非粘合层压材料并将所述增粘剂层（C）施加到所述非粘合层压板以产生 PSA层压板。

62. 发明申请

US20060202809A1 Method and apparatus for detecting cargo state in a delivery vehicle 有权
标题翻译：用于检测输送车辆中货物状态的方法和装置
公开(公告)号：US20060202809A1
公开(公告)日：2006-09-14
申请号：US11070762
申请日：2005-03-02
申请人： Richard Lane , William Peckham , Mark Parisi , Mark Doyle , Ken Oertle , Charles Pedersen , Bratislav Matic , William Molesworth
发明人： Richard Lane , William Peckham , Mark Parisi , Mark Doyle , Ken Oertle , Charles Pedersen , Bratislav Matic , William Molesworth
IPC分类号： B60Q1/00
CPC分类号： G06Q10/08
摘要： Method and apparatus for detecting cargo state in a delivery vehicle. A method is provided for determining a cargo state in a delivery vehicle. The method includes sensing a cargo state change, and determining whether or not the delivery vehicle is in motion. The method also includes storing the cargo state change if it is determined that the delivery vehicle is not in motion.
摘要翻译：用于检测输送车辆中货物状态的方法和装置。提供一种用于确定运送车辆中的货物状态的方法。该方法包括感测货物状态变化，以及确定输送车辆是否运动。如果确定运送车辆不运动，该方法还包括存储货物状态改变。

63. 发明申请

US20060132354A1 Method of detecting a target 有权
标题翻译：检测目标的方法
公开(公告)号：US20060132354A1
公开(公告)日：2006-06-22
申请号：US10543583
申请日：2004-01-29
申请人： Gavin Beard , Robert Horey , Richard Lane , Samantha Lycett
发明人： Gavin Beard , Robert Horey , Richard Lane , Samantha Lycett
IPC分类号： G01S13/52
CPC分类号： G01S7/2926 , G01S13/5246 , G01S13/726
摘要： A method for processing returns from a sensor, such as a radar system, in order to identify targets is provided. The method uses a track before detect routine to integrate data from several scans in order to give better discrimination. In running the track before detect routine however a number of possible target motions are postulated and the data combined accounting for such motions. A result above a threshold may then be indicative to a target present and moving with the postulated velocity. The method gives more accurate target detection as the combined data at the correct target motion postulate is more consistent than transient noise and clutter. Once a target has been identified it is preferably removed from the data set in searching for additional targets.
摘要翻译：提供了一种用于处理从诸如雷达系统的传感器返回的方法，以便识别目标。该方法使用检测程序之前的轨迹来整合来自几个扫描的数据，以便更好地区分。然而，在检测例程之前运行轨道，假设了许多可能的目标运动，并且数据组合考虑了这种运动。然后，阈值以上的结果可以指示目标存在并且以假定的速度移动。该方法提供更准确的目标检测，因为正确的目标运动假设的组合数据比瞬态噪声和杂波更一致。一旦已经识别出目标，则优选在搜索附加目标时从数据集中去除目标。

64. 发明申请

US20050181567A1 Double blanket ion implant method and structure 审中-公开
标题翻译：双层离子注入法和结构
公开(公告)号：US20050181567A1
公开(公告)日：2005-08-18
申请号：US11094377
申请日：2005-03-31
申请人： Mark Fischer , Charles Dennison , Fawad Ahmed , Richard Lane , John Zahurak , Kunal Parekh
发明人： Mark Fischer , Charles Dennison , Fawad Ahmed , Richard Lane , John Zahurak , Kunal Parekh
IPC分类号： H01L21/265 , H01L21/28 , H01L21/336 , H01L21/8234 , H01L21/8244
CPC分类号： H01L21/2652 , H01L21/2658 , H01L21/28247 , H01L29/6656 , H01L29/6659
摘要： A double blanket ion implant method for forming diffulsion regions in memory array devices, such as a MOSFET access device is disclosed. The method provides a semiconductor substrate with a gate structure formed on its surface Next, a first pair of diffulsion regions are formed in a region adjacent to the channel region by a first blanket ion implantation process. The first blanket ion implantation process has a first energy level and dose. The device is subjected to oxidizing conditions, which form oxidized sidewalls on the gate structure. A second blanket ion implantation process is conducted at the same location as the first ion implantation process adding additional dopant to the diffusion regions. The second blanket ion implantation process has a second energy level and dose. The resultant diffusion regions provide the device with improved static refresh performance over prior art devices. In addition, the first and second energy levels and doses are substantially lower than an energy level and dose used in a prior art single implantation process.
摘要翻译：公开了一种用于在诸如MOSFET访问装置的存储器阵列器件中形成差分区域的双层离子注入方法。该方法提供了在其表面上形成栅极结构的半导体衬底。接下来，通过第一覆盖离子注入工艺在与沟道区相邻的区域中形成第一对差分区域。第一次毯式离子注入工艺具有第一能级和剂量。该器件经受氧化条件，其在栅极结构上形成氧化的侧壁。在与第一离子注入工艺相同的位置处进行第二覆盖离子注入工艺，向扩散区域添加额外的掺杂剂。第二次毯子离子注入过程具有第二能量水平和剂量。所得到的扩散区域提供了比现有技术的装置更好的静态刷新性能的装置。此外，第一和第二能量水平和剂量基本上低于现有技术单一植入过程中使用的能级和剂量。

65. 发明申请

US20050167279A1 Methods of electrochemically treating semiconductor substrates 有权
标题翻译：电化学处理半导体衬底的方法
公开(公告)号：US20050167279A1
公开(公告)日：2005-08-04
申请号：US11053817
申请日：2005-02-08
申请人： Dale Collins , Richard Lane , Rita Klein
发明人： Dale Collins , Richard Lane , Rita Klein
IPC分类号： C25D7/12 , H01L21/02 , H01L21/288 , H01L21/8242 , H01L27/108 , C25D5/02
CPC分类号： H01L27/10852 , H01L21/2885 , H01L27/10808 , H01L27/10817 , H01L28/60 , H01L28/90 , Y10S257/906
摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.
摘要翻译：本发明包括电化学处理半导体衬底的方法。本发明包括电镀物质的方法。提供了具有限定的第一和第二区域的基板。第一和第二区域可以由单个掩模限定，因此可以被认为是相对于彼此自对准的。在第一区域上形成第一导电材料，并且在第二区域上形成第二导电材料。第一和第二导电材料暴露于电解溶液，同时向第一和第二导电材料提供电流。在将第一和第二导电材料暴露于电解液期间，期望的物质选择性地电镀到第一导电材料上。本发明还包括形成电容器结构的方法。

66. 发明申请

US20050167278A1 Methods of forming capacitor constructions 有权
标题翻译：形成电容器结构的方法
公开(公告)号：US20050167278A1
公开(公告)日：2005-08-04
申请号：US11053816
申请日：2005-02-08
申请人： Dale Collins , Richard Lane , Rita Klein
发明人： Dale Collins , Richard Lane , Rita Klein
IPC分类号： C25D7/12 , H01L21/02 , H01L21/288 , H01L21/8242 , H01L27/108 , C25D5/02
CPC分类号： H01L27/10852 , H01L21/2885 , H01L27/10808 , H01L27/10817 , H01L28/60 , H01L28/90 , Y10S257/906
摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.
摘要翻译：本发明包括电化学处理半导体衬底的方法。本发明包括电镀物质的方法。提供了具有限定的第一和第二区域的基板。第一和第二区域可以由单个掩模限定，因此可以被认为是相对于彼此自对准的。在第一区域上形成第一导电材料，并且在第二区域上形成第二导电材料。第一和第二导电材料暴露于电解溶液，同时向第一和第二导电材料提供电流。在将第一和第二导电材料暴露于电解液期间，期望的物质选择性地电镀到第一导电材料上。本发明还包括形成电容器结构的方法。

67. 发明申请

US20050124106A1 Reverse metal process for creating a metal silicide transistor gate structure 有权
标题翻译：用于产生金属硅化物晶体管栅极结构的反向金属工艺
公开(公告)号：US20050124106A1
公开(公告)日：2005-06-09
申请号：US11033525
申请日：2005-01-12
申请人： Werner Juengling , Richard Lane
发明人： Werner Juengling , Richard Lane
IPC分类号： H01L21/28 , H01L21/336 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/786 , H01L21/8234 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66537 , H01L21/26586 , H01L21/28052 , H01L21/28061 , H01L29/4941 , H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： The present invention teaches a method of forming a MOSFET transistor having a silicide gate which is not subject to problems produced by etching a metal containing layer when forming the gate stack structure. A gate stack is formed over a semiconductor substrate comprising a gate oxide layer, a conducting layer, and a first insulating layer. Sidewall spacers are formed adjacent to the sides of the gate stack structure and a third insulating layer is formed over the gate stack and substrate. The third insulating layer and first insulating layer are removed to expose the conducting layer and, at least one unetched metal-containing layer is formed over and in contact with the conducting layer. The gate stack structure then undergoes a siliciding process with different variations to finally form a silicide gate.
摘要翻译：本发明教导了一种形成具有硅化物栅的MOSFET晶体管的方法，其在形成栅极堆叠结构时不会产生通过蚀刻含金属层产生的问题。在包括栅极氧化物层，导电层和第一绝缘层的半导体衬底上形成栅堆叠。侧壁间隔件形成在栅堆叠结构的侧面附近，并且第三绝缘层形成在栅堆叠和衬底上。去除第三绝缘层和第一绝缘层以暴露导电层，并且至少一个未蚀刻的含金属层形成在导电层上并与导电层接触。然后，栅极堆叠结构经历不同变化的硅化处理，最终形成硅化物栅极。

68. 发明授权

US06569564B1 Button cell constructions and thin profile battery constructions 失效
标题翻译：纽扣电池结构和薄型电池结构
公开(公告)号：US06569564B1
公开(公告)日：2003-05-27
申请号：US09434686
申请日：1999-11-05
申请人： Richard Lane
发明人： Richard Lane
IPC分类号： H01M202
CPC分类号： H01M2/0222 , H01M2/18 , H01M6/12 , Y10T29/49108 , Y10T29/4911
摘要： A method of forming a button-type battery includes, a) providing a conductive first terminal housing member, a conductive second terminal housing member, an anode, and a cathode; b) providing an anode/cathode separator, the separator being pre-configured with a self-aligning shape for self-aligning receipt relative to one of the first or second terminal housing members or the cathode; c) positioning the pre-configured separator relative to the one of the first or second terminal housing members or cathode, the pre-configured separator shape facilitating final alignment of the separator relative to the one of the first or second terminal housing members or the cathode; and d) joining the first and second terminal housing members together into a sealed battery assembly, with the anode, cathode and separator being received within the sealed battery assembly. A button-type battery construction is also disclosed.
摘要翻译：形成按钮型电池的方法包括：a）提供导电的第一端子壳体构件，导电的第二端子壳体构件，阳极和阴极; b）提供阳极/阴极分离器，所述隔板预先配置有相对于所述第一或第二端子壳体构件或阴极中的一个的自对准接收的自对准形状; c）将预配置的分离器相对于第一或第二端子壳体构件或阴极中的一个定位，预先配置的分离器形状有助于分离器相对于第一或第二端子壳体构件或阴极中的一个的最终对准 ; 以及d）将所述第一和第二端子壳体部件连接在一起成为密封的电池组件，其中所述阳极，阴极和分离器被接收在所述密封的电池组件内。还公开了纽扣式电池结构。

69. 发明授权

US06365298B2 Thin profile batteries 有权
标题翻译：薄型电池
公开(公告)号：US06365298B2
公开(公告)日：2002-04-02
申请号：US09435251
申请日：1999-11-05
申请人： Richard Lane
发明人： Richard Lane
IPC分类号： H01M218
CPC分类号： H01M2/0222 , H01M2/18 , H01M6/12 , Y10T29/49108 , Y10T29/4911
摘要： A method of forming a button-type battery includes, a) providing a conductive first terminal housing member, a conductive second terminal housing member, an anode, and a cathode; b) providing an anode/cathode separator, the separator being pre-configured with a self-aligning shape for self-aligning receipt relative to one of the first or second terminal housing members or the cathode; c) positioning the pre-configured separator relative to the one of the first or second terminal housing members or cathode, the pre-configured separator shape facilitating final alignment of the separator relative to the one of the first or second terminal housing members or the cathode; and d) joining the first and second terminal housing members together into a sealed battery assembly, with the anode, cathode and separator being received within the sealed battery assembly. A button-type battery construction is also disclosed.
摘要翻译：形成按钮型电池的方法包括：a）提供导电的第一端子壳体构件，导电的第二端子壳体构件，阳极和阴极; b）提供阳极/阴极分离器，所述隔板预先配置有相对于所述第一或第二端子壳体构件或阴极中的一个的自对准接收的自对准形状; c）将预配置的分离器相对于第一或第二端子壳体构件或阴极中的一个定位，预先配置的分离器形状有助于分离器相对于第一或第二端子壳体构件或阴极中的一个的最终对准 ; 以及d）将所述第一和第二端子壳体部件连接在一起成为密封的电池组件，其中所述阳极，阴极和分离器被接收在所述密封的电池组件内。还公开了纽扣式电池结构。

70. 发明授权

US06265282B1 Process for making an isolation structure 有权
公开(公告)号：US06265282B1
公开(公告)日：2001-07-24
申请号：US09135474
申请日：1998-08-17
申请人： Richard Lane , Randhir Thakur
发明人： Richard Lane , Randhir Thakur
IPC分类号： H01L2176
CPC分类号： H01L21/76224 , Y10T428/31623
摘要： A novel shallow-trench isolation (STI) structure and process for forming it is described. More particularly, a recess is formed in a semiconductor substrate. An oxide layer is formed in the recess using thermal oxidation or high-pressure oxidation. If the oxide layer is formed by high-pressure oxidation, then a nitrogen containing gas may be flowed into a high-pressure oxidation chamber to add nitrogen to the oxide layer. The recess may then be filled with a dielectric layer by a deposition process. Alternately, the dielectric layer may be formed using high-pressure oxidation.

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