专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20070295272A1 METHODS TO IMPROVE THE IN-FILM DEFECTIVITY OF PECVD AMORPHOUS CARBON FILMS 有权
标题翻译：提高PECVD非晶碳膜薄膜缺陷度的方法
公开(公告)号：US20070295272A1
公开(公告)日：2007-12-27
申请号：US11680278
申请日：2007-02-28
申请人： Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
发明人： Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： C23C16/45565 , C23C16/0254 , C23C16/26 , C23C16/4404
摘要： An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
摘要翻译：提供了具有用于半导体应用的保护涂层的制品及其制造方法。在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。在某些实施方案中，涂层材料包含无定形含碳氮层。在某些实施例中，制品包括构造成将气体输送到处理室的喷头。

62. 发明授权

US07279049B2 Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support 失效
标题翻译：用于减少沿着衬底支撑件的可移动轴夹带异物的装置
公开(公告)号：US07279049B2
公开(公告)日：2007-10-09
申请号：US10775769
申请日：2004-02-05
申请人： Andrzej Kaszuba , Sophia M. Velastegui , Visweswaren Sivaramakrishnan , Pyongwon Yim , Mario David Silvetti , Tom K. Cho , Indrajit Lahiri , Surinder S. Bedi
发明人： Andrzej Kaszuba , Sophia M. Velastegui , Visweswaren Sivaramakrishnan , Pyongwon Yim , Mario David Silvetti , Tom K. Cho , Indrajit Lahiri , Surinder S. Bedi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67126 , C23C16/4401
摘要： In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.
摘要翻译：在一个实施例中，本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。在一个实施例中，保护环包括大致环形的保护环，其定位在形成在套筒内的步骤中，该套筒环绕轴。保护环被定位成基本上密封将轴与套筒分开的间隙，使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。在另一个实施例中，保护环包括具有内周边和外周边的基部，连接到内周边的第一凸缘，联接到外周边的第二凸缘和将第一凸缘与第二凸缘分开的连续通道。第一凸缘适于用作容纳轴的位移的弹簧。

63. 发明授权

US07024105B2 Substrate heater assembly 有权
标题翻译：基板加热器总成
公开(公告)号：US07024105B2
公开(公告)日：2006-04-04
申请号：US10684054
申请日：2003-10-10
申请人： Mark A. Fodor , Sophia M. Velastegui , Soovo Sen , Visweswaren Sivaramakrishnan , Peter Wai-Man Lee , Mario David Silvetti
发明人： Mark A. Fodor , Sophia M. Velastegui , Soovo Sen , Visweswaren Sivaramakrishnan , Peter Wai-Man Lee , Mario David Silvetti
IPC分类号： F26B19/00
CPC分类号： C23C16/4585 , C23C16/46 , H01L21/68735
摘要： A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.
摘要翻译：提供了一种用于在处理期间支撑预定标准直径的基板的基板加热器组件。在一个实施例中，基板加热器组件包括具有上表面，下表面和嵌入式加热元件的主体。衬底支撑表面形成在主体的上表面中并且限定衬底接收袋的一部分。环形壁垂直于上表面定向并且具有衬底的至少一半厚度的长度。该壁限定了基板接收槽的外周边，并具有小于预定基板直径的直径小于约0.5mm的直径。

64. 发明申请

US20050172905A1 Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support 失效
标题翻译：用于减少沿着衬底支撑件的可移动轴夹带异物的装置
公开(公告)号：US20050172905A1
公开(公告)日：2005-08-11
申请号：US10775769
申请日：2004-02-05
申请人： Andrzej Kaszuba , Sophia Velastegui , Visweswaren Sivaramakrishnan , Pyongwon Yim , Mario Silvetti , Tom Cho , Indrajit Lahiri , Surinder Bedi
发明人： Andrzej Kaszuba , Sophia Velastegui , Visweswaren Sivaramakrishnan , Pyongwon Yim , Mario Silvetti , Tom Cho , Indrajit Lahiri , Surinder Bedi
IPC分类号： C23C16/00 , C23C16/44 , H01L21/00
CPC分类号： H01L21/67126 , C23C16/4401
摘要： In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.
摘要翻译：在一个实施例中，本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。在一个实施例中，保护环包括大致环形的保护环，其定位在形成在套筒内的步骤中，该套筒环绕轴。保护环被定位成基本上密封将轴与套筒分开的间隙，使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。在另一个实施例中，保护环包括具有内周边和外周边的基部，连接到内周边的第一凸缘，联接到外周边的第二凸缘以及将第一凸缘与第二凸缘分开的连续通道。第一凸缘适于用作容纳轴的位移的弹簧。

65. 发明授权

US06911403B2 Methods of reducing plasma-induced damage for advanced plasma CVD dielectrics 失效
标题翻译：降低等离子体诱导的高级等离子体CVD电介质损伤的方法
公开(公告)号：US06911403B2
公开(公告)日：2005-06-28
申请号：US10645675
申请日：2003-08-20
申请人： Lihua Li , Tsutomu Tanaka , Tzu-Fang Huang , Li-Qun Xia , Dian Sugiarto , Visweswaren Sivaramakrishnan , Peter Wai-Man Lee , Mario David Silvetti
发明人： Lihua Li , Tsutomu Tanaka , Tzu-Fang Huang , Li-Qun Xia , Dian Sugiarto , Visweswaren Sivaramakrishnan , Peter Wai-Man Lee , Mario David Silvetti
IPC分类号： C23C16/40 , C23C16/509 , H01L21/312 , H01L21/316 , H01L21/768 , H01L21/31
CPC分类号： C23C16/5096 , C23C16/401 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801
摘要： A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.
摘要翻译：用于在衬底上沉积有机硅酸盐层的方法包括在用于在处理室中的RF功率存在下从包含有机硅化合物的气体混合物沉积有机硅酸盐层的工艺顺序期间改变一个或多个处理条件。在一个方面，在处理过程中，衬底与处理室中的气体分配歧管之间的距离是变化的。优选地，沉积有机硅酸盐层的方法使等离子体对衬底的损伤最小化。

66. 发明授权

US06663713B1 Method and apparatus for forming a thin polymer layer on an integrated circuit structure 失效
标题翻译：在集成电路结构上形成薄聚合物层的方法和装置
公开(公告)号：US06663713B1
公开(公告)日：2003-12-16
申请号：US08734978
申请日：1996-10-22
申请人： Stuardo A. Robles , Visweswaren Sivaramakrishnan , Bang C. Nguyen , Gayathri Rao , Gary Fong , Vicente Lam , Peter Wai-Man Lee , Mei Chang
发明人： Stuardo A. Robles , Visweswaren Sivaramakrishnan , Bang C. Nguyen , Gayathri Rao , Gary Fong , Vicente Lam , Peter Wai-Man Lee , Mei Chang
IPC分类号： C23C1600
CPC分类号： H01L21/02118 , B05D1/60 , C23C16/44 , C23C16/452 , H01L21/02271 , H01L21/02301 , H01L21/312
摘要： A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the vaporization of stable di-pxylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and the optional blending of the resulting gaseous p-xylylene monomers with one or more polymerizable materials in gaseous form capable of copolymerizing with the p-xylylene monomers to form a low dielectric constant polymerized parylene material. An apparatus is also disclosed which provides for the distribution of the polymerizable gases into the deposition chamber, for cooling the substrate down to a temperature at which the gases will condense to form a polymerized dielectric material, for heating the walls of the deposition chamber to inhibit formation and accumulation of polymerized residues thereon, and for recapturing unreacted monomeric vapors exiting the deposition chamber. An apparatus is further provided downstream of the deposition chamber to control both the flow rate or residence time of the reactive monomer in the deposition chamber as well as to control the pressure of the deposition chamber. Provision is further made for an electrical bias to permit the apparatus to function as a plasma etch chamber, for in situ plasma cleaning of the chamber between depositions, for enhancing cracking of polymerizable precursor material, for heating the walls of the chamber and for providing heat sufficient to prevent polymerization in the gas phase.
摘要翻译：公开了用于在半导体衬底上形成薄聚合物层的方法和装置。在一个实施方案中，所述方法和装置包括稳定的二 - 二甲苯的蒸发，将这种气态二聚体材料热解转化成反应性单体，以及任选地将所得气态对二甲苯单体与一种或多种气态形式的可聚合材料能够与对二甲苯单体共聚以形成低介电常数的聚对二甲苯聚合物。还公开了一种设备，其提供可聚合气体分布到沉积室中，用于将衬底冷却至气体冷凝以形成聚合电介质材料的温度，以加热沉积室的壁以抑制在其上聚合的残余物的形成和积累，以及用于重新捕获离开沉积室的未反应的单体蒸气。还在沉积室的下游设置一个装置，以控制反应性单体在沉积室中的流速或停留时间以及控制沉积室的压力。进一步提供电偏压以允许该装置用作等离子体蚀刻室，用于沉积之间的腔室的原位等离子体清洁，用于增强可聚合前体材料的裂化，用于加热室的壁并提供热量足以防止气相中的聚合。

67. 发明授权

US5968588A In-situ liquid flow rate estimation and verification by sonic flow method 失效
标题翻译：声流法原位液体流量估算与验证
公开(公告)号：US5968588A
公开(公告)日：1999-10-19
申请号：US819674
申请日：1997-03-17
申请人： Visweswaren Sivaramakrishnan , Yen-Kun Wang , Fong Chang , Thanh Pham , Jeff Plante
发明人： Visweswaren Sivaramakrishnan , Yen-Kun Wang , Fong Chang , Thanh Pham , Jeff Plante
IPC分类号： C23C16/448 , C23C16/52 , C23C16/00
CPC分类号： C23C16/52 , C23C16/4481
摘要： An apparatus for in-situ control of the flow of a liquid precursor into a deposition chamber comprises a liquid injection system having a liquid injection outlet connected to a chamber inlet line upstream of the deposition chamber. The liquid injection system includes a liquid precursor supply, a carrier gas supply, a vaporizer, and a controller managing flows of the liquid precursor and carrier gas to the chamber. A bypass line is connected to the chamber inlet line and includes a bypass valve, a sonic orifice, and a pressure gauge upstream of the sonic orifice. To calibrate the flow of the liquid precursor, a flow of carrier gas is directed into the bypass line at a carrier gas sonic flow rate. A first steady state pressure is measured with the pressure gauge. The liquid precursor is vaporized and directed to the flow of carrier gas into the bypass line. A second steady state pressure is measured with the pressure gauge. Calibration information is computed using the first steady state pressure and second steady state pressure based on sonic flow theory. The calibration information is used to calibrate the controller to correct deviations in the liquid flow rate and achieve a target liquid precursor flow rate for improving wafer uniformity.
摘要翻译：用于原位控制液体前体进入沉积室的装置包括液体注射系统，其具有连接到沉积室上游的室入口管的液体注入口。液体注射系统包括液体前体供应源，载气供应器，蒸发器和控制液体前体和载气流到腔室的控制器。旁路管路连接到腔室入口管线，并且包括旁通阀，声波孔口和声波孔口上游的压力计。为了校准液体前体的流动，以载气声音流速将载气流引导到旁路管线中。用压力表测量第一稳态压力。液体前体蒸发并引导到载气流入旁通管线。用压力表测量第二稳态压力。基于声流理论，使用第一稳态压力和第二稳态压力计算校准信息。校准信息用于校准控制器以校正液体流速中的偏差，并实现目标液体前体流速以改善晶片均匀性。

68. 发明授权

US08900399B2 Integrated method and system for manufacturing monolithic panels of crystalline solar cells 有权
标题翻译：晶体太阳能电池单块面板的集成方法和系统
公开(公告)号：US08900399B2
公开(公告)日：2014-12-02
申请号：US13050807
申请日：2011-03-17
申请人： Tirunelveli S. Ravi , Ananda H. Kumar , Ashish Asthana , Kyle Ross Tantiwong , Visweswaren Sivaramakrishnan
发明人： Tirunelveli S. Ravi , Ananda H. Kumar , Ashish Asthana , Kyle Ross Tantiwong , Visweswaren Sivaramakrishnan
IPC分类号： C23F1/00 , H01L31/18 , H01L31/048 , H01L31/068
CPC分类号： H01L31/1876 , H01L21/68728 , H01L31/048 , H01L31/068 , H01L31/1804 , H01L31/1892 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： An anodic etching system for simultaneously etching a multiplicity of substrates comprises: an etching tank for containing therein an etchant solution; a power supply connected between a first electrode and a second electrode, the first electrode and the second electrode being immersible in the etchant solution and positioned at opposite ends of the tank; and a plurality of support plates serially arranged between the first electrode and the second electrode and sealed to walls of the tank, wherein each of the plurality of support plates is configured to support at least one of the multiplicity of substrates, and wherein any consecutive pair of the plurality of support plates defines an isolated volume of the tank for containing a portion of the etchant solution. The plurality of support plates may be susceptors configured for holding the multiplicity of substrates in a chemical vapor deposition tool.
摘要翻译：用于同时蚀刻多个基板的阳极蚀刻系统包括：用于在其中容纳蚀刻剂溶液的蚀刻槽; 连接在第一电极和第二电极之间的电源，所述第一电极和所述第二电极浸入所述蚀刻液中并位于所述槽的相对端; 以及多个支撑板，其串联地布置在所述第一电极和所述第二电极之间并且密封到所述罐的壁，其中所述多个支撑板中的每一个被配置为支撑所述多个基板中的至少一个，并且其中，所述多个支撑板限定了用于容纳蚀刻剂溶液的一部分的罐的隔离体积。多个支撑板可以是构造成用于将多个基板保持在化学气相沉积工具中的基座。

69. 发明授权

US08298629B2 High throughput multi-wafer epitaxial reactor 有权
标题翻译：高通量多晶圆外延反应堆
公开(公告)号：US08298629B2
公开(公告)日：2012-10-30
申请号：US12392448
申请日：2009-02-25
申请人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong
发明人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong
IPC分类号： C23C8/00 , C23C16/00
CPC分类号： C23C16/481 , C23C16/0209 , C23C16/455 , C23C16/4582 , C23C16/46 , C23C16/463 , C23C16/54 , C30B25/105 , C30B25/12 , C30B29/06
摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.
摘要翻译：公开了一种能够在多个晶片上同时沉积薄膜的外延反应器。在沉积期间，许多晶片被包含在晶片套筒内，其包括间隔开的多个晶片承载板，以最小化处理体积。工艺气体优先流入由一个或多个灯模块加热的晶片套筒的内部容积。吹扫气体在反应器室内的晶片套筒外部流动，以最小化壁沉积。此外，灯模组中各灯的照明顺序可以进一步提高晶片套筒内沉积速率变化的线性。为了改善均匀性，工艺气体流动的方向可以在横流构型中变化。将灯排序与多反应器系统中的交叉流处理相结合，可实现高通量沉积，具有良好的膜均匀性和有效利用工艺气体。

70. 发明授权

US08282734B2 Methods to improve the in-film defectivity of PECVD amorphous carbon films 有权
标题翻译：改善PECVD无定形碳膜膜内缺陷性的方法
公开(公告)号：US08282734B2
公开(公告)日：2012-10-09
申请号：US12255638
申请日：2008-10-21
申请人： Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
发明人： Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
IPC分类号： C23C16/455 , C23C16/30 , C23C16/34 , C23C16/32 , B05C11/00 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/0254 , C23C16/26 , C23C16/4404
摘要： An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
摘要翻译：提供了具有用于半导体应用的保护涂层的制品及其制造方法。在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。在某些实施方案中，涂层材料包含无定形含碳氮层。在某些实施例中，制品包括构造成将气体输送到处理室的喷头。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式