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61. 发明申请

US20050040432A1 Light emitting device and method 审中-公开
标题翻译：发光装置及方法
公开(公告)号：US20050040432A1
公开(公告)日：2005-02-24
申请号：US10646457
申请日：2003-08-22
申请人： Milton Feng , Nick Holonyak , Walid Hafez
发明人： Milton Feng , Nick Holonyak , Walid Hafez
IPC分类号： H01L21/00 , H01L29/739 , H01L31/0328 , H01L31/109 , H01L33/00 , H01L33/08
CPC分类号： H01L33/0016 , H01L33/08
摘要： A method for producing controllable light emission from a semiconductor device includes the following steps: providing a heterojunction bipolar transistor device that includes collector, base, and emitter regions; and applying electrical signals across terminals coupled with the collector, base, and emitter regions to cause light emission by radiative recombination in the base region. In a disclosed embodiment, the step of applying electrical signals includes applying a collector-to-emitter voltage and modulating light output by applying a modulating base current.
摘要翻译：一种用于从半导体器件产生可控发光的方法包括以下步骤：提供包括集电极，基极和发射极区域的异质结双极晶体管器件; 以及在与集电极，基极和发射极区域耦合的端子之间施加电信号，以通过基极区域中的辐射复合来引起光发射。在公开的实施例中，施加电信号的步骤包括施加集电极 - 发射极电压并通过施加调制基极电流调制光输出。

62. 发明授权

US4473939A Process for fabricating GaAs FET with ion implanted channel layer 失效
标题翻译：用离子注入沟道层制造GaAs FET的工艺
公开(公告)号：US4473939A
公开(公告)日：1984-10-02
申请号：US453251
申请日：1982-12-27
申请人： Milton Feng , Victor K. Eu , Hilda Kanber
发明人： Milton Feng , Victor K. Eu , Hilda Kanber
IPC分类号： H01L29/812 , H01L21/265 , H01L21/285 , H01L21/324 , H01L21/338 , H01L29/10 , H01L29/80
CPC分类号： H01L29/66863 , H01L21/28587 , H01L21/3245 , H01L29/1029 , H01L29/8128 , Y10S438/909
摘要： There is herein described a process for fabricating GaAs FETs with an ion implanted channel layer wherein an ion implanted substrate is capless annealed under an arsine overpressure, and a relatively shallow portion of the outer surface of the substrate in the active layer is removed for the deposition of a gate metallic electrode.
摘要翻译：这里描述了一种用于制造具有离子注入沟道层的GaAs FET的工艺，其中离子注入衬底在胂过压下无盖退火，并且去除有源层中衬底的外表面的相对浅的部分用于沉积的栅极金属电极。

63. 发明授权

US4407694A Multi-range doping of epitaxial III-V layers from a single source 失效
标题翻译：从单个源的多范围掺杂外延III-V层
公开(公告)号：US4407694A
公开(公告)日：1983-10-04
申请号：US276104
申请日：1981-06-22
申请人： Victor K. Eu , Milton Feng , Timothy T. Zielinski , James M. Whelan
发明人： Victor K. Eu , Milton Feng , Timothy T. Zielinski , James M. Whelan
IPC分类号： H01L21/205 , H01L21/223
CPC分类号： H01L21/02576 , H01L21/02395 , H01L21/02543 , H01L21/02546 , H01L21/0262 , Y10S118/90 , Y10S252/951 , Y10S438/925
摘要： Silicon doping of GaAs epitaxial layers grown using the AsCl.sub.3 /H.sub.2 /GaAs:Ga CVD system is accomplished using AsCl.sub.3 :SiCl.sub.4 liquid doping solutions. These solutions can be readily prepared with reproducible compositions and provide excellent doping control. Fine adjustments in the doping level can be achieved by adjusting the H.sub.2 flow rate and by varying the temperature of the doping solution. Doping levels may range from about 5.times.10.sup.15 to 5.times.10.sup.19 cm.sup.-3 by adjusting the mole fraction of SiCl.sub.4 in the doping solution and the H.sub.2 flow rate to change the mole fraction of P.sub.HCl. The epitaxial layers doped using this technique have excellent room temperature and liquid nitrogen mobilities for electron concentrations between 1.times.10.sup.16 cm.sup.-3 and 8.times.10.sup.18 cm.sup.-3. This doping method is particularly useful for the growth of GaAs epitaxial layers for FET devices.
摘要翻译：使用AsCl3 / H2 / GaAs：Ga CVD系统生长的GaAs外延层的硅掺杂使用AsCl 3：SiCl 4液体掺杂溶液来实现。这些溶液可以容易地用可重复组合物制备并提供优异的掺杂控制。可以通过调节H2流速和改变掺杂溶液的温度来实现掺杂水平的微调。通过调节掺杂溶液中SiCl 4的摩尔分数和H 2流速来改变PHCl的摩尔分数，掺杂量可以在约5×10 15至5×10 19 cm -3的范围内。使用该技术掺杂的外延层对于1×10 16 cm -3和8×10 18 cm -3之间的电子浓度具有优异的室温和液氮迁移率。该掺杂方法对于用于FET器件的GaAs外延层的生长特别有用。

64. 发明授权

US4396437A Selective encapsulation, controlled atmosphere annealing for III-V semiconductor device fabrication 失效
标题翻译： III-V半导体器件制造的选择性封装，受控气氛退火
公开(公告)号：US4396437A
公开(公告)日：1983-08-02
申请号：US260455
申请日：1981-05-04
申请人： Siang P. Kwok , Milton Feng , Victor K. Eu
发明人： Siang P. Kwok , Milton Feng , Victor K. Eu
IPC分类号： H01L21/324 , H01L21/265
CPC分类号： H01L21/3245
摘要： A post-ion implantation annealing technique is provided to remove implantation damage in the active region of III-V (e.g., GaAs) semiconductor devices formed in a III-V semi-insulating substrate and separated by a field region. The technique involves applying a dielectric encapsulation selectively over the device active area and annealing in a controlled reducing atmosphere which includes the Group V element (e.g., arsenic). The dielectric encapsulant over the active region permits migration of the species employed to render the substrate semi-insulating (e.g., Cr in GaAs substrates), thereby resulting in high carrier mobility in the active region. Without encapsulation, migration of the species in the field region is substantially suppressed, thereby resulting in good inter-device isolation.
摘要翻译：提供离子后注入退火技术以去除在III-V半绝缘衬底中形成并被场区域分离的III-V（例如，GaAs）半导体器件的有源区域中的注入损伤。该技术涉及在器件有源区域上选择性地施加电介质封装并在包括第V族元素（例如砷）的受控还原气氛中进行退火。有源区上的电介质密封剂允许用于使衬底半绝缘（例如，GaAs衬底中的Cr）所用的物质的迁移，从而在有源区域中导致高的载流子迁移率。没有包封，实质上抑制了场区域中的物质的迁移，从而导致良好的器件间隔离。

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