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1. 发明申请

US20050040432A1 Light emitting device and method 审中-公开
标题翻译：发光装置及方法
公开(公告)号：US20050040432A1
公开(公告)日：2005-02-24
申请号：US10646457
申请日：2003-08-22
申请人： Milton Feng , Nick Holonyak , Walid Hafez
发明人： Milton Feng , Nick Holonyak , Walid Hafez
IPC分类号： H01L21/00 , H01L29/739 , H01L31/0328 , H01L31/109 , H01L33/00 , H01L33/08
CPC分类号： H01L33/0016 , H01L33/08
摘要： A method for producing controllable light emission from a semiconductor device includes the following steps: providing a heterojunction bipolar transistor device that includes collector, base, and emitter regions; and applying electrical signals across terminals coupled with the collector, base, and emitter regions to cause light emission by radiative recombination in the base region. In a disclosed embodiment, the step of applying electrical signals includes applying a collector-to-emitter voltage and modulating light output by applying a modulating base current.
摘要翻译：一种用于从半导体器件产生可控发光的方法包括以下步骤：提供包括集电极，基极和发射极区域的异质结双极晶体管器件; 以及在与集电极，基极和发射极区域耦合的端子之间施加电信号，以通过基极区域中的辐射复合来引起光发射。在公开的实施例中，施加电信号的步骤包括施加集电极 - 发射极电压并通过施加调制基极电流调制光输出。

2. 发明申请

US20080089368A1 Semiconductor laser devices and methods 审中-公开
标题翻译：半导体激光器件及方法
公开(公告)号：US20080089368A1
公开(公告)日：2008-04-17
申请号：US11974323
申请日：2007-10-12
申请人： Milton Feng , Nick Holonyak , Richard Chan , Gabriel Walter
发明人： Milton Feng , Nick Holonyak , Richard Chan , Gabriel Walter
IPC分类号： H01S3/10
CPC分类号： H01L33/0016 , B82Y20/00 , H01L33/08 , H01S5/0422 , H01S5/0618 , H01S5/06203 , H01S5/06226 , H01S5/06812 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/34313
摘要： A method for producing controllable light pulses includes the following steps: providing a heterojunction bipolar transistor structure including collector, base, and emitter regions of semiconductor materials; providing an optical resonant cavity enclosing at least a portion of the transistor structure; and coupling electrical signals with respect to the collector, base, and emitter regions, to switch back and forth between a stimulated emission mode that produces output laser pulses and a spontaneous emission mode. In a form of the method, the electrical signals include an AC excitation signal, and part of each excitation signal cycle is operative to produce stimulated emission, and another part of each excitation signal cycle is operative to produce spontaneous emission.
摘要翻译：一种制造可控光脉冲的方法包括以下步骤：提供包括半导体材料的集电极，基极和发射极区域的异质结双极晶体管结构; 提供封闭所述晶体管结构的至少一部分的光学谐振腔; 并且相对于集电极，基极和发射极区域耦合电信号，以在产生输出激光脉冲的受激发射模式和自发发射模式之间来回切换。以该方法的形式，电信号包括AC激励信号，并且每个激励信号周期的一部分可操作以产生受激发射，并且每个激励信号周期的另一部分可操作以产生自发发射。

3. 发明申请

US20050054172A1 Semiconductor device and mehtod 有权
标题翻译：半导体器件和mehtod
公开(公告)号：US20050054172A1
公开(公告)日：2005-03-10
申请号：US10861320
申请日：2004-06-04
申请人： Milton Feng , Nick Holonyak
发明人： Milton Feng , Nick Holonyak
IPC分类号： H01L21/00 , H01L29/739 , H01L31/0328 , H01L31/109 , H01L33/00 , H01L33/08
CPC分类号： H01L33/0016 , H01L29/0821 , H01L29/1004 , H01L29/155 , H01L29/205 , H01L29/66242 , H01L29/7371 , H01L33/08
摘要： A method for increasing the speed of a bipolar transistor, includes the following steps: providing a bipolar transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region.
摘要翻译：一种提高双极晶体管速度的方法包括以下步骤：提供具有发射极，基极和集电极区域的双极晶体管; 提供用于将电信号与发射极，基极和集电极区域耦合的电极; 并且使基极区域适应于增强受激发射而不利于自发发射，从而降低基区的载流子复合寿命。

4. 发明申请

US20080240173A1 Method for controlling operation of light emitting transistors and laser transistors 有权
标题翻译：用于控制发光晶体管和激光晶体管的操作的方法
公开(公告)号：US20080240173A1
公开(公告)日：2008-10-02
申请号：US11805859
申请日：2007-05-24
申请人： Nick Holonyak , Milton Feng , Gabriel Walter
发明人： Nick Holonyak , Milton Feng , Gabriel Walter
IPC分类号： H01S3/10
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/34 , H01S5/3412 , H01S5/3416
摘要： A method for controlling operation of a transistor includes the following steps: providing a bipolar transistor having emitter, base and collector regions; applying electrical signals to the transistor to produce light emission from the transistor; effecting photon-assisted tunneling of carriers in the transistor with self-generated photons of the light emission, and controlling operation of the transistor by controlling the photon-assisted tunneling.
摘要翻译：一种用于控制晶体管的操作的方法包括以下步骤：提供具有发射极，基极和集电极区域的双极晶体管; 将电信号施加到晶体管以产生来自晶体管的光发射; 通过发光的自发光子对晶体管中的载流子进行光子辅助隧穿，并且通过控制光子辅助隧道来控制晶体管的操作。

5. 发明申请

US20070223547A1 SEMICONDUCTOR LASER DEVICES AND METHODS 有权
标题翻译：半导体激光器件和方法
公开(公告)号：US20070223547A1
公开(公告)日：2007-09-27
申请号：US11068561
申请日：2005-02-28
申请人： Milton Feng , Nick Holonyak , Richard Chan , Gabriel Walter
发明人： Milton Feng , Nick Holonyak , Richard Chan , Gabriel Walter
IPC分类号： H01S5/00
CPC分类号： H01L33/0016 , B82Y20/00 , H01L33/08 , H01S5/0422 , H01S5/0618 , H01S5/06203 , H01S5/06226 , H01S5/06812 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/34313
摘要： A method for producing controllable light pulses includes the following steps: providing a heterojunction bipolar transistor structure including collector, base, and emitter regions of semiconductor materials; providing an optical resonant cavity enclosing at least a portion of the transistor structure; and coupling electrical signals with respect to the collector, base, and emitter regions, to switch back and forth between a stimulated emission mode that produces output laser pulses and a spontaneous emission mode. In a form of the method, the electrical signals include an AC excitation signal, and part of each excitation signal cycle is operative to produce stimulated emission, and another part of each excitation signal cycle is operative to produce spontaneous emission.
摘要翻译：一种制造可控光脉冲的方法包括以下步骤：提供包括半导体材料的集电极，基极和发射极区域的异质结双极晶体管结构; 提供封闭所述晶体管结构的至少一部分的光学谐振腔; 并且相对于集电极，基极和发射极区域耦合电信号，以在产生输出激光脉冲的受激发射模式和自发发射模式之间来回切换。以该方法的形式，电信号包括AC激励信号，并且每个激励信号周期的一部分可操作以产生受激发射，并且每个激励信号周期的另一部分可操作以产生自发发射。

6. 发明申请

US20050062566A1 High cycle MEMS device 有权
公开(公告)号：US20050062566A1
公开(公告)日：2005-03-24
申请号：US10868130
申请日：2004-06-14
申请人： Milton Feng , Richard Chan , Nick Holonyak , David Becher , Shyh-Chiang Shen
发明人： Milton Feng , Richard Chan , Nick Holonyak , David Becher , Shyh-Chiang Shen
IPC分类号： H01H59/00 , H01H51/22
CPC分类号： H01H59/0009 , H01H2001/0084 , H01H2059/0072
摘要： A high life cycle and low voltage MEMS device. In an aspect of the invention, separate support posts are disposed to prevent a suspended switch pad from touching the actuation pad while permitting the switch pad to ground a signal line. In another aspect of the invention, cantilevered support beams are made from a thicker material than the switching pad. Increased thickness material in the cantilever tends to keep the switch flat in its resting position. Features of preferred embodiments include dimples in the switch pad to facilitate contact with a signal line and serpentine cantilevers arranged symmetrically to support the switch pad.

7. 发明申请

US20070201523A1 PNP light emitting transistor and method 有权
标题翻译： PNP发光晶体管及方法
公开(公告)号：US20070201523A1
公开(公告)日：2007-08-30
申请号：US11364893
申请日：2006-02-27
申请人： Gabriel Walter , Nick Holonyak , Milton Feng , Richard Chan
发明人： Gabriel Walter , Nick Holonyak , Milton Feng , Richard Chan
IPC分类号： H01S5/00 , H01L31/00
CPC分类号： H01S5/0421 , H01L33/0004 , H01L33/04 , H01S5/06203 , H01S5/183 , H01S5/3054 , H01S5/3095
摘要： A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an emitter contact coupled with the second tunnel junction, and a base contact coupled with the base; whereby, signals applied with respect to the collector, base, and emitter contacts causes light emission from the base by radiative recombination in the base.
摘要翻译：一种半导体发光晶体管器件，包括：具有p型集电极，n型基极和p型发射极的双极pnp晶体管结构; 与集电极耦合的第一隧道结和与发射极耦合的第二隧道结; 以及与所述第一隧道结耦合的集电极触点，与所述第二隧道结耦合的发射极触点，以及与所述基极耦合的基极触点; 由此，相对于集电极，基极和发射极接触点施加的信号通过基底中的辐射复合导致来自基底的光发射。

8. 发明申请

US20060208290A1 Semiconductor light emitting devices and methods 有权
标题翻译：半导体发光器件及方法
公开(公告)号：US20060208290A1
公开(公告)日：2006-09-21
申请号：US11175995
申请日：2005-07-06
申请人： Milton Feng , Nick Holonyak , Richard Chan
发明人： Milton Feng , Nick Holonyak , Richard Chan
IPC分类号： H01L31/113
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/06226 , H01S5/18341 , H01S5/305 , H01S5/3095 , H01S5/3211 , H01S5/3412 , H01S5/34313 , H01S5/4031
摘要： A method for producing an optical output, including the following steps: providing first and second electrical signals; providing a bipolar light-emitting transistor device that includes collector, base, and emitter regions; providing a collector electrode coupled with the collector region and an emitter electrode coupled with the emitter region, and coupling electrical potentials with respect to the collector and emitter electrodes; providing an optical coupling in optical communication with the base region; providing first and second base electrodes coupled with the base region; and coupling the first and second electrical signals with the first and second base electrodes, respectively, to produce an optical output emitted from the base region and coupled into the optical coupling, the optical output being a function of the first and second electrical signals.
摘要翻译：一种用于产生光输出的方法，包括以下步骤：提供第一和第二电信号; 提供包括集电极，基极和发射极区域的双极发光晶体管器件; 提供与集电极区域耦合的集电极和与发射极区域耦合的发射极，并且相对于集电极和发射极电极耦合电势; 提供与所述基区光学通信的光耦合; 提供与所述基底区域耦合的第一和第二基底电极; 以及分别将所述第一和第二电信号与所述第一和第二基极耦合以产生从所述基极区发射并耦合到所述光耦合中的光输出，所述光输出是所述第一和第二电信号的函数。

9. 发明申请

US20050040387A1 Semiconductor method and device 有权
标题翻译：半导体方法和器件
公开(公告)号：US20050040387A1
公开(公告)日：2005-02-24
申请号：US10861103
申请日：2004-06-04
申请人： Milton Feng , Nick Holonyak
发明人： Milton Feng , Nick Holonyak
IPC分类号： H01L21/00 , H01L29/739 , H01L31/0328 , H01L31/109 , H01L33/00 , H01L33/08
CPC分类号： H01L33/0016 , H01L33/08
摘要： A method for enhancing operation of a bipolar light-emitting transistor includes the following steps: providing a bipolar light-emitting transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to promote carrier transport from the emitter region toward the collector region by providing, in the base region, several spaced apart quantum size regions of different thicknesses, with the thicknesses of the quantum size regions being graded from thickest near the collector to thinnest near the emitter.
摘要翻译：一种用于增强双极发光晶体管的操作的方法包括以下步骤：提供具有发射极，基极和集电极区域的双极发光晶体管; 提供用于将电信号与发射极，基极和集电极区域耦合的电极; 并且通过在基极区域中提供不同厚度的几个间隔开的量子尺寸区域，使得基极区域能够促进从发射极区域向集电极区域的载流子传输，其中量子尺寸区域的厚度从收集器附近的厚度分级在发射器附近最薄。

10. 发明授权

US4319937A Homogeneous liquid phase epitaxial growth of heterojunction materials 失效
标题翻译：异质结材料的均相液相外延生长
公开(公告)号：US4319937A
公开(公告)日：1982-03-16
申请号：US206324
申请日：1980-11-12
申请人： Nick Holonyak , Edward A. Rezek
发明人： Nick Holonyak , Edward A. Rezek
IPC分类号： H01L21/208 , H01L33/00
CPC分类号： H01L33/0062 , H01L21/02392 , H01L21/02543 , H01L21/02546 , H01L21/02625
摘要： In accordance with the finding of undesired, non-uniform, heterojunction layers in heterojunction light emitters, it has been determined that completely uniform layers can be grown by growing individual super thin layers (i.e., .ltoreq.200 A) of uniform composition and stacking as many of these layers as desired into a uniform "thick" (.about.0.1.mu.) layer. This growth is accomplished by employing an LPE system wherein the substrate and melt are brought into contact for only the period of time during which the constituents of the melt deposit on the substrate in proper ratios. Steady-state diffusion-limited growth is avoided. The substrate is then removed from the melt, the melt allowed to re-equilibrate, and the process repeated as many times as desired.
摘要翻译：根据在异质结发光体中发现不期望的，非均匀的异质结层，已经确定通过生长均匀组成和层叠的单个超薄层（即，= 200A）可以生长完全均匀的层根据需要将这些层中的许多层分成均匀的“厚”（DIFFERENCE0.1μm）层。该生长通过使用LPE系统来实现，其中使衬底和熔体仅在熔融物成分以适当的比率沉积在衬底上的时间段内接触。避免了稳态扩散受限生长。然后将基材从熔体中除去，使熔体重新平衡，并且该过程根据需要重复多次。

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