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61. 发明授权

US06798622B2 Magnetoresistive (MR) sensor element with sunken lead structure 失效
标题翻译：具有凹陷引线结构的磁阻（MR）传感元件
公开(公告)号：US06798622B2
公开(公告)日：2004-09-28
申请号：US10370346
申请日：2003-02-19
申请人： Kochan Ju , Jei-Wei Chang , Cheng Horng
发明人： Kochan Ju , Jei-Wei Chang , Cheng Horng
IPC分类号： G11B5127
CPC分类号： G11B5/3903 , B82Y10/00 , B82Y25/00 , G01R33/09 , G11B5/3163 , G11B5/3967 , G11B2005/3996
摘要： A method for forming a magnetoresistive (MR) sensor element. There is first provided a substrate. There is then formed over the substrate a seed layer. There is then formed contacting a pair of opposite ends of the seed layer a pair of patterned conductor lead layer structures. There is then etched, while employing an ion etch method, the seed layer and the pair of patterned conductor lead layer structures to form an ion etched seed layer and a pair of ion etched patterned conductor lead layer structures. Finally, there is then formed upon the ion etched seed layer and the pair of ion etched patterned conductor lead layers structures a magnetoresistive (MR) layered structure. Within the magnetoresistive (MR) sensor element, the pair of patterned conductor lead layer structures may be formed within a pair of recesses within an ion etch recessed dielectric isolation layer.
摘要翻译：一种用于形成磁阻（MR）传感器元件的方法。首先提供基板。然后在衬底上形成种子层。然后形成一对图案化的导体引线层结构使种子层的一对相对端接触。然后蚀刻，同时采用离子蚀刻方法，晶种层和一对图案化的导体引线层结构，以形成离子蚀刻种子层和一对离子蚀刻图案化导体引线层结构。最后，然后形成在离子蚀刻种子层上，并且一对离子蚀刻图案化的导体引线层构成磁阻（MR）层状结构。在磁阻（MR）传感器元件内，一对图案化的导体引线层结构可以形成在离子蚀刻凹陷的介电隔离层内的一对凹槽内。

62. 发明授权

US06882509B2 GMR configuration with enhanced spin filtering 有权
标题翻译： GMR配置与增强的自旋过滤
公开(公告)号：US06882509B2
公开(公告)日：2005-04-19
申请号：US10791021
申请日：2004-03-02
申请人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
发明人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/00 , H01F10/06 , H01F10/12 , H01F10/14 , H01F10/16 , H01F10/18 , H01F10/30 , H01F10/32 , H01F41/30 , H01L43/08 , H01L43/12 , G11B5/33 , G11B5/127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3903 , G11B5/3909 , H01F10/3272 , H01L43/08 , Y10T428/1121 , Y10T428/1129 , Y10T428/1157 , Y10T428/1171 , Y10T428/12944 , Y10T428/2495
摘要： Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of alpha-Fe2O3 having a crystal lattice constant that is close to the FM free layer's crystal constant and has the same crystal structure. The metal oxide buffer layer enhances the specular scattering. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter-SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment include a pinned FM layer comprising a three layer structure of a lower AP layer, a space layer (e.g., Ru) and an upper AP layer.
摘要翻译：公开了一种制造SVGMR传感器元件的方法。在第一实施例中，在种子层和不含铁磁性（FM）的层之间形成缓冲层，该缓冲层由α-Fe 2 O 3 3 N 3 晶格常数接近于FM自由层的晶体常数，具有相同的晶体结构。金属氧化物缓冲层增强了镜面散射。在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-GVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。第三实施例包括包括下AP层的三层结构，空间层（例如Ru）和上AP层的钉扎FM层。

63. 发明授权

US07201947B2 CPP and MTJ reader design with continuous exchange-coupled free layer 失效
标题翻译： CPP和MTJ读卡器设计，具有连续的交换耦合自由层
公开(公告)号：US07201947B2
公开(公告)日：2007-04-10
申请号：US10238269
申请日：2002-09-10
申请人： Simon Liao , Kochan Ju , Youfeng Zheng
发明人： Simon Liao , Kochan Ju , Youfeng Zheng
IPC分类号： B29C35/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , Y10T29/49046
摘要： As track widths of magnetic read heads grow very small, conventional longitudinal bias stabilization has been found to no longer be suitable since the strong magnetostatic coupling at the track edges also pins the magnetization of the free layer. This problem has been overcome by extending the free layer so that it is no longer confined to the area immediately below the spacer or tunneling layer. A longitudinal bias layer immediately below the free layer is given a relatively weak magnetic exchange coupling field of about 200 Oe. Although there is strong exchange coupling between this and the free layer, the degree of pinning of the free layer is low so that the device's output signal is reduced by less than about 10%. A process for manufacturing both the CPP SV and a MTJ versions of the invention is described.
摘要翻译：随着磁读头的轨道宽度增长非常小，传统的纵向偏置稳定性已经被发现不再适用，因为轨道边缘处的强静磁耦合也引导自由层的磁化。已经通过延伸自由层来克服这个问题，使得它不再局限于间隔物或隧道层正下方的区域。在自由层正下方的纵向偏置层被给予约200Oe的相对较弱的磁交换耦合场。尽管在这种自由层之间存在很强的交换耦合，但是自由层的钉扎程度很低，因此器件的输出信号减少了约10％。描述了用于制造本发明的CPP SV和MTJ版本的方法。

64. 发明授权

US06873501B2 CPP spin valve head with bias point control 失效
标题翻译： CPP自旋阀头带偏心点控制
公开(公告)号：US06873501B2
公开(公告)日：2005-03-29
申请号：US10406119
申请日：2003-04-03
申请人： Youfeng Zheng , Kochan Ju , Simon Liao
发明人： Youfeng Zheng , Kochan Ju , Simon Liao
IPC分类号： G11B5/00 , G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3954 , G11B2005/0008
摘要： High sensitivity in a CPP spin valve has been achieved by providing an extended free layer while maintaining good bias point control and edge domain control through use of exchange coupling with the whole free layer. In a second embodiment of the invention, a second spin valve is added so that the free layer receives filtered electrons from two directions. Processes to manufacture both embodiments are also described.
摘要翻译： CPP自旋阀的高灵敏度已经通过提供扩展的自由层实现，同时通过使用与整个自由层的交换耦合来保持良好的偏置点控制和边缘域控制。在本发明的第二实施例中，添加第二自旋阀，使得自由层从两个方向接收经滤波的电子。还描述了制造两个实施例的过程。

65. 发明授权

US06594124B2 Canted adjacent layer stabilized SV heads 失效
公开(公告)号：US06594124B2
公开(公告)日：2003-07-15
申请号：US09993402
申请日：2001-11-06
申请人： You Feng Zheng , Kochan Ju , Simon Liao
发明人： You Feng Zheng , Kochan Ju , Simon Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3932 , Y10T428/11 , Y10T428/1121 , Y10T428/1171
摘要： An improved stabilization scheme for a GMR read head is described. Two important changes relative to prior art designs have been introduced. Instead of biasing by means of a permanent magnet or through exchange coupling with an antiferromagnetic layer, the magnetostatic field emanating from a nearby, but not contiguous, layer is used. Additionally, to obtain optimum stability with this scheme the bias, instead of running parallel to the easy axis of the free layer, is canted away from it towards the direction of the demagnetizing field of the pinned layer. A process for the manufacture of the structure is also described.

66. 发明授权

US07279269B2 CPP head with parasitic shunting reduction 有权
标题翻译： CPP头与寄生分流减少
公开(公告)号：US07279269B2
公开(公告)日：2007-10-09
申请号：US10734422
申请日：2003-12-12
申请人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
发明人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
IPC分类号： G11B5/39
CPC分类号： G11B5/3163 , G11B5/398 , Y10T428/1171
摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.
摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部部分精确地集中在其上。

67. 发明授权

US07262941B2 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效
标题翻译： FeTa纳米氧化物层作为覆盖层，用于增强底部自旋阀结构中的巨磁阻
公开(公告)号：US07262941B2
公开(公告)日：2007-08-28
申请号：US10856180
申请日：2004-05-28
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： G11B5/39
CPC分类号： C22C38/10 , B32B15/01 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C22C38/12 , G01R33/093 , G11B5/3163 , G11B5/3903 , H01F10/3259 , H01F10/3272 , H01F41/302 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： An NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer. As a result of their structure and the method of their fabrication, these elements have higher GMR ratios and lower resistances than elements of the prior art.
摘要翻译：一种具有合成反铁磁性钉扎（SyAP）层的NiCr种子层底部自旋阀传感器元件和包括单个镜面反射纳米氧化物层（NOL）或包含非金属层的双层和镜面反射纳米氧化物层反射纳米氧化层。由于它们的结构及其制造方法的结果，这些元件具有比现有技术的元件更高的GMR比和更低的电阻。

68. 发明授权

US07180712B1 Shield structure design to improve the stability of an MR head 有权
标题翻译：盾构结构设计提高MR头的稳定性
公开(公告)号：US07180712B1
公开(公告)日：2007-02-20
申请号：US09513873
申请日：2000-02-28
申请人： Min Li , Simon H. Liao , Cheng T. Horng , Kochan Ju
发明人： Min Li , Simon H. Liao , Cheng T. Horng , Kochan Ju
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/112 , G11B5/3912 , H01L43/08
摘要： A method for forming a laminated shield to improve the stability and performance of an MR read head and the MR read head formed using that shield. The shield consists of two layers of ferromagnetic material separated by a layer of ruthenium, allowing the ferromagnetic layers to form an antiferromagnetic configuration by means of a quantum mechanical exchange interaction. The antiferromagnetic configuration has a stable domain structure and a magnetization that forms closed loops around the shield edges thereby reducing noise in the readback signal and reducing disturbances to the magnetic state of the sensor element.
摘要翻译：一种用于形成层叠屏蔽以提高使用该屏蔽形成的MR读取头和MR读取头的稳定性和性能的方法。屏蔽由两层铁磁材料组成，由一层钌分离，允许铁磁层通过量子力学交换相互作用形成反铁磁性结构。反铁磁构造具有稳定的畴结构和磁化，其在屏蔽边缘周围形成闭环，从而降低回读信号中的噪声并减少对传感器元件的磁状态的干扰。

69. 发明授权

US07118680B2 Self-alignment scheme for enhancement of CPP-GMR 失效
标题翻译：用于增强CPP-GMR的自对准方案
公开(公告)号：US07118680B2
公开(公告)日：2006-10-10
申请号：US10718372
申请日：2003-11-20
申请人： Jei-Wei Chang , Chao-Peng Chen , Min Li , Kochan Ju
发明人： Jei-Wei Chang , Chao-Peng Chen , Min Li , Kochan Ju
IPC分类号： G11B5/39
CPC分类号： G11B5/1278 , Y10T29/49052
摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.
摘要翻译：提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。所制造的传感器具有降低的电阻和增加的灵敏度。

70. 发明授权

US06909583B2 FeTa nano-oxide layer in pinned layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效
标题翻译： FeTa纳米氧化物层，用于增强底部自旋阀结构中的巨磁阻
公开(公告)号：US06909583B2
公开(公告)日：2005-06-21
申请号：US10437090
申请日：2003-05-13
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： G01R33/09 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.
摘要翻译：一种用于形成底部自旋阀传感器的方法，该底部自旋阀传感器具有反结合磁耦合到钉扎层的合成反铁磁钉扎（SyAP）层，其中SyAP的一个层形成为三层层压，其包含镜面反射氧化物层 FeTaO。根据该方法形成的传感器具有非常高的GMR比，并且具有良好的钉扎强度。

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